Patents by Inventor Muhammad Amin Saleem

Muhammad Amin Saleem has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Deposition and selective removal of conducting helplayer for nanostructure processing
    Patent number: 9114993
    Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
    Type: Grant
    Filed: September 18, 2014
    Date of Patent: August 25, 2015
    Assignee: Smoltek AB
    Inventors: Jonas T. Berg, Vincent Desmaris, Mohammad Shafiqul Kabir, Muhammad Amin Saleem, David Brud
  • Deposition and Selective Removal of Conducting Helplayer for Nanostructure Processing
    Publication number: 20150004092
    Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
    Type: Application
    Filed: September 18, 2014
    Publication date: January 1, 2015
    Inventors: Jonas T. Berg, Vincent Desmaris, Mohammad Shafiqul Kabir, Muhammad Amin Saleem, David Brud
  • Deposition and selective removal of conducting helplayer for nanostructure processing
    Patent number: 8866307
    Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
    Type: Grant
    Filed: August 7, 2013
    Date of Patent: October 21, 2014
    Inventors: Jonas S. T. Berg, Vincent Desmaris, Mohammad Shafiqul Kabir, Muhammad Amin Saleem, David Brud
  • Deposition and Selective Removal of Conducting Helplayer for Nanostructure Processing
    Publication number: 20130334704
    Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
    Type: Application
    Filed: August 7, 2013
    Publication date: December 19, 2013
    Applicant: Smoltek AB
    Inventors: Jonas S. T. Berg, Vincent Desmaris, Mohammad Shafiqul Kabir, Muhammad Amin Saleem, David Brud
  • Deposition and selective removal of conducting helplayer for nanostructure processing
    Patent number: 8508049
    Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
    Type: Grant
    Filed: February 24, 2009
    Date of Patent: August 13, 2013
    Assignee: Smoltek AB
    Inventors: Jonas S. T. Berg, Vincent Desmaris, Mohammad Shafiqul Kabir, Muhammad Amin Saleem, David Brud
  • Deposition and Selective Removal of Conducting Helplayer for Nanostructure Processing
    Publication number: 20090233124
    Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
    Type: Application
    Filed: February 24, 2009
    Publication date: September 17, 2009
    Inventors: Jonas S. T. Berg, Vincent Desmaris, Mohammad Shafiqul Kabir, Muhammad Amin Saleem, David Brud