Abstract: A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.

Abstract: A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.

Abstract: A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.

Abstract: A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.

Abstract: A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.

Abstract: A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.

Abstract: A method and apparatus for drying a disk-shaped substrate. The substrate is typically a substrate used for the manufacture of magnetic disks, and has a centrally located opening. The substrate is lowered into a liquid bath by a first holder, which also becomes immersed in the bath. The first holder lifts the substrate until the substrate extends partially out of contact with the liquid. A second, dry holder grabs a dry portion of the substrate that extends out of the bath, and continues to lift the substrate out of contact with the liquid.

Abstract: A method for drying a disk-shaped substrate. The substrate is typically a substrate used for the manufacture of magnetic disks, and has a centrally located opening. The substrate is lowered into a liquid bath by a first holder, which also becomes immersed in the bath. The first holder lifts the substrate until the substrate extends partially out of contact with the liquid. A second, dry holder grabs a dry portion of the substrate that extends out of the bath, and continues to lift the substrate out of contact with the liquid.

Abstract: An occupant classification system utilizes a rules-based expert system to automatically classify the occupant of a seat for the purposes of airbag deployment. The invention provides users with the ability to create, test, and modify the image attributes or “features” used by the expert system to classify occupants into one of several predefined occupant-type categories. Users are also provided the ability to create, test, and modify the processes utilizing those chosen features. The user of the invention designs the features and the algorithms used by the expert system classifier. A feature extractor is used to extract features from an image of the occupant and surrounding seat area, and the values relating to those features are sent in a vector of features to the expert system classifier. The expert system classifier classifies the image of the occupant according to the internal rules for that classifier.

Abstract: A method and apparatus for drying a disk-shaped substrate. The substrate is typically a substrate used for the manufacture of magnetic disks, and has a centrally located opening. The substrate is lowered into a liquid bath by a first holder, which also becomes immersed in the bath. The first holder lifts the substrate until the substrate extends partially out of contact with the liquid. A second, dry holder grabs a dry portion of the substrate that extends out of the bath, and continues to lift the substrate out of contact with the liquid.

Abstract: A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.