Abstract: Embodiments of present invention provide forming a seed layer on top of a supporting structure, the seed layer being a copper alloy with one or more alloying elements; forming a solder pad on top of and covering a portion of the seed layer; causing at least some of the one or more alloying elements to move into a lower region of the solder pad, thereby creating a first portion of the seed layer that is not covered by the solder pad and a second portion of the seed layer that is self-aligned to the solder pad, the second portion has a concentration level of the one or more alloying elements that is less than a concentration level of the one or more alloying elements of the first portion of the seed layer; and removing the first portion of the seed layer. A structure formed thereby is also provided.

Abstract: An approach to provide a method of joining a semiconductor chip to a semiconductor substrate, the approach includes depositing a nanoparticle paste and aligning each of one or more solder contacts on a semiconductor chip to a substrate bond pad. The approach includes sintering, in a reducing gaseous environment, the nanoparticle paste to connect the semiconductor chip to a semiconductor substrate bond pad.

Abstract: A package structure includes a substrate having an upper surface; a first chip package positioned on the upper surface of the substrate, the first chip package comprising a first chip having a first integrated circuit connected to a first redistribution layer; a second chip package positioned on the upper surface of the substrate, the second chip package comprising a second chip having a second integrated circuit connected to a second redistribution layer; an orthogonal bridge positioned between the first chip package and the second chip package and having an interconnection to the first redistribution layer and the second redistribution layer; and a heat spreader positioned in direct contact with at least one of the first chip package, the second chip package, or the orthogonal bridge. The orthogonal bridge is arranged substantially orthogonal to the upper surface of the substrate.

Abstract: Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a first copper pad embedded in a first dielectric layer; a second copper pad embedded in a second dielectric layer; and an oxygen-containing inter-layer, where a portion of the oxygen-containing inter-layer is directly between the first copper pad and the second dielectric layer and includes a first alloy element of manganese, aluminum, zirconium, titanium, tin, or a combination thereof. A method of forming the same is also provided.

Abstract: An electronic device in which an electrically-insulating and highly thermal conductive sheet is located at the interconnect level is provided. The presence of the electrically-insulating and highly thermal conductive sheet at the interconnect level provides a significant reduction in the temperature of the electronic device, without causing excess stress in the electronic device. This results in electronic devices that have improved performance and reliability.

Abstract: An electronic device including a chip module assembly is provided. The chip module assembly includes at least one first semiconductor chip pair located at a first chip level, a bridge die interconnecting the at least one first semiconductor chip pair, and at least one second semiconductor chip pair located on top of the first chip level, wherein the at least one second chip pair are connected to each other through the at least one first semiconductor chip pair and the bridge die.

Abstract: A three-dimensional (3D) die architecture is provided. The 3D die architecture includes a first die and a second die. The second die includes multiple interior layers of various types and is hybrid bonded to the first die along a hybrid bond layer. The 3D die architecture further includes oxide liner material extending from an exposed surface of the second die to the hybrid bond layer, a first through-silicon-via (TSV) extending from the exposed surface to a corresponding one of the multiple interior layers and a second TSV extending within the oxide liner material from the exposed surface to the hybrid bond layer.

Abstract: A method for manufacturing an electronic package includes etching one or more lateral surfaces of a PCB laminate to expose power and ground planes of the PCB laminate. A protective coating is applied to the exposed power and ground planes. At least one heat-generating component is affixed to a top surface of the PCB laminate. A heat spreader having a base section and flanged edges is formed and attached to the heat-generating components and the PCB laminate lateral surfaces, where the flanged edges of the heat spreader are thermally connected to the PCB laminate lateral surfaces. During operation of the heat-generating components, the flanged edges dissipate heat from the PCB laminate lateral surfaces.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a first recess partially through a substrate from a first side of the substrate, forming a dielectric layer in the first recess, forming a second recess partially through the dielectric layer from the first side of the substrate, and forming a buried power rail (BPR) in the second recess of the dielectric layer. The method also includes thinning the substrate from a second side of the substrate to a level of the dielectric layer, the second side of the substrate being opposite to the first side of the substrate.

Abstract: A microelectronic package is provided. The microelectronic package includes a substrate. The microelectronic package includes a first die and a second die that are attached to the substrate. Also, the microelectronic package includes a dielectric structure that includes at least one electrical wiring. The at least one electrical wiring that is included in the dielectric structure electrically connects the first die to the second die.

Abstract: A semiconductor structure for tailoring a die stiffness. The semiconductor structure may include a packaging substrate, a lid, and a first semiconductor die between the packaging substrate and the lid. The first semiconductor die may have a frontside attached to the packaging substrate that has semiconductor devices. The first semiconductor die may also have a backside, opposite the frontside, that has grooves less than a thickness of the first semiconductor die.

Abstract: A semiconductor integrated circuit device includes a first back-end-of-line region coupled to a first side of a front-end-of-line region, a second back-end-of-line region coupled to a second side of the front-end-of-line region, and a thermally conducting solder at least partially surrounding a perimeter of the front-end-of-line region, the first back-end-of-line region and the second back-end-of-line region.

Abstract: A semiconductor structure includes a power distribution network including a first buried power rail, a power wire, and a first buried via electrically interconnecting the first buried power rail and the power wire. Each of the first buried power rail, the power wire, and the first buried via have a liner on a corresponding bottom surface thereof and sidewalls thereof. The structure also includes a dielectric layer outward of the power distribution network; a first field effect transistor outward of the dielectric layer; a first via trench contact electrically interconnecting a source/drain region of the transistor to the first buried power rail; a first outer wire outward of the first field effect transistor; and an electrical path electrically interconnecting the first outer wire with the power wire.

Abstract: Embodiments of present invention provide a semiconductor structure. The structure includes a device die including a device layer; a back-end-of-line (BEOL) structure on a frontside of the device layer and a frontside substrate attached to the BEOL structure; and a backside power distribution network (BSPDN) structure on a backside of the device layer and a backside substrate attached to the BSPDN structure; and a device package including a base element and a lid element, wherein the device die is attached to the base element of the device package through multiple C4 bumps at the frontside substrate and is attached to the lid element of the device package at the backside substrate. A method of forming the same is also provided.

Abstract: An integrated circuit has a frontside and a backside and includes a first CMOS cell of complementary metal oxide semiconductor (CMOS) devices. A first row of gate cuts and a second row of gate cuts bound the first CMOS cell. A gate is associated with at least one of the devices in the first CMOS cell. A first signal line is at the frontside of the integrated circuit. A signal connection is provided from the first signal line to the backside of the integrated circuit. A local interconnect is provided at the backside of the integrated circuit from the signal connection to the gate.

Abstract: Heterogeneous integration semiconductor packages with voltage regulation are described. A semiconductor device can include a chip including a memory device and a plurality of through-silicon-vias (TSVs). The semiconductor device can further include a processor arranged on top of the chip. The processor can be configured to communicate with the memory device via a plurality of interconnects. The semiconductor device can further include at least one voltage regulator arranged on top of the chip. The at least one voltage regulator can be configured to regulate power being provided from the plurality of TSVs to the processor.

Abstract: An interconnect for a semiconductor device includes a laminate substrate; a first plurality of electrical devices in or on a surface of the laminate substrate; a redistribution layer having a surface disposed on the surface of the laminate substrate; a second plurality of electrical devices in or on the surface of the redistribution layer; and a plurality of transmission lines between the first plurality of electrical devices and the second plurality of electrical devices. The surface of the laminate substrate and the surface of the redistribution layer are parallel to each other to form a dielectric structure and a conductor structure.

Abstract: A semiconductor structure includes a first back-end-of-line region coupled to a first side of a front-end-of-line region, a second back-end-of-line region coupled to a second side of the front-end-of-line region, and a thermally conducting region at least partially surrounding a perimeter of the front-end-of-line region, the first back-end-of-line region and the second back-end-of-line region.

Abstract: A stack structure that includes: a device wafer, a handler wafer, and a bonding structure disposed between the device wafer and the handler wafer, wherein one or both of the device wafer and the handler wafer have a release layer that is configured to be substantially or completely vaporized by infrared ablation when exposed to an infrared laser energy. The device wafer includes at least two consecutive layers adjacent the bonding structure that together include a plurality of fill portions that substantially or completely disable entry of the infrared laser energy into a plurality of layers of the device wafer below the two consecutive layers adjacent the bonding structure.

Abstract: A semiconductor device including a hybrid contact scheme for stacked FET is disclosed with integration of a BSPDN. A double-sided (both frontside and backside of the wafer) contact scheme with buried power rail (BPR) and backside power distribution network (BSPDN) provides optimum contact and interconnect. The stacked FET could include, for example, FINFET over FINFET, FINFET over nanosheet, or nanosheet over nanosheet.