Abstract: Embodiments include semiconductor packages and methods of forming such packages. A semiconductor package includes a die on a package substrate, an integrated heat spreader (IHS) on the package substrate and above the die, and a solder thermal interface material (STIM) coupling the die to the IHS. The semiconductor package includes a low-temperature solder (LTS) paste comprising an alloy of tin and bismuth (Bi), and the LTS paste on a bottom surface of the package substrate having a ball grid array. The LTS paste may have a weight percentage of Bi greater than 35% and a melting point less than or equal to a melting point of the STIM, where the STIM includes indium. The weight percentage of Bi may be between approximately 35% to 58%. The semiconductor package may include a solder ball coupling the LTS paste on the package substrate to the LTS paste on a second package substrate.

Abstract: Embodiments include semiconductor packages and methods of forming such packages. A semiconductor package includes a die on a package substrate, an integrated heat spreader (IHS) on the package substrate and above the die, and a solder thermal interface material (STIM) coupling the die to the IHS. The semiconductor package includes a low-temperature solder (LTS) paste comprising an alloy of tin and bismuth (Bi), and the LTS paste on a bottom surface of the package substrate having a ball grid array. The LTS paste may have a weight percentage of Bi greater than 35% and a melting point less than or equal to a melting point of the STIM, where the STIM includes indium. The weight percentage of Bi may be between approximately 35% to 58%. The semiconductor package may include a solder ball coupling the LTS paste on the package substrate to the LTS paste on a second package substrate.

Abstract: Embodiments include semiconductor packages and methods of forming such packages. A semiconductor package includes a die on a package substrate, an integrated heat spreader (IHS) on the package substrate and above the die, and a solder thermal interface material (STIM) coupling the die to the IHS. The semiconductor package includes a low-temperature solder (LTS) paste comprising an alloy of tin and bismuth (Bi), and the LTS paste on a bottom surface of the package substrate having a ball grid array. The LTS paste may have a weight percentage of Bi greater than 35% and a melting point less than or equal to a melting point of the STIM, where the STIM includes indium. The weight percentage of Bi may be between approximately 35% to 58%. The semiconductor package may include a solder ball coupling the LTS paste on the package substrate to the LTS paste on a second package substrate.

Abstract: A transmissive composite film is described that may be applied to the backside of a microelectronic device, for example an integrated circuit die or a bridge. A microelectronic die package in one example has a substrate, an integrated circuit die attached and electrically connected to the substrate, the die having a front side with electrical attachments and a backside, and a composite film attached to a backside of the die, the composite film having a polymer base with nano-fillers to protect the backside of the die.

Abstract: A solder is deposited on a heat sink. The solder is first reflowed at a first temperature that is below about 120° C. The solder is second heat aged at a temperature that causes the first reflowed solder to have an increased second reflow temperature. The heat aging process results in less compressive stress in a die that uses the solder as a thermal interface material. The solder can have a composition that reflows and adheres to the die and the heat sink without the use of organic fluxes.

Abstract: A microelectronic assembly and method for fabricating the same are described. In an example, a microelectronic assembly includes a microelectronic device having a surface with one or more areas to receive one or more solder balls, the one or more areas having a surface finish comprising Ni. A solder material comprising Cu, such as flux or paste, is applied to the Ni surface finish and one or more solder balls are coupled to the microelectronic device by a reflow process that forms a solder joint between the one or more solder balls, the solder material comprising Cu, and the one or more areas having a surface finish comprising Ni.

Abstract: In one embodiment, the present invention includes a method for placing a thermal interface material (TIM) between a die including a backside metallic (BSM) layer including copper (Cu) and a heat spreader having a contact surface including Cu, where the TIM is formed of an alloy including indium (In) and tin (Sn), and bonding the TIM to the die and the heat spreader to form at least one quaternary intermetallic compound (IMC) layer. Other embodiments are described and claimed.

Abstract: In one embodiment, the present invention includes a method for placing a thermal interface material (TIM) between a die including a backside metallic (BSM) layer including copper (Cu) and a heat spreader having a contact surface including Cu, where the TIM is formed of an alloy including indium (In) and tin (Sn), and bonding the TIM to the die and the heat spreader to form at least one quaternary intermetallic compound (IMC) layer. Other embodiments are described and claimed.

Abstract: In one embodiment, the present invention includes a method for placing a thermal interface material (TIM) between a die including a backside metallic (BSM) layer including copper (Cu) and a heat spreader having a contact surface including Cu, where the TIM is formed of an alloy including indium (In) and tin (Sn), and bonding the TIM to the die and the heat spreader to form at least one quaternary intermetallic compound (IMC) layer. Other embodiments are described and claimed.

Abstract: A microelectronic assembly and method for fabricating the same are described. In an example, a microelectronic assembly includes a microelectronic device having a surface with one or more areas to receive one or more solder balls, the one or more areas having a surface finish comprising Ni. A solder material comprising Cu, such as flux or paste, is applied to the Ni surface finish and one or more solder balls are coupled to the microelectronic device by a reflow process that forms a solder joint between the one or more solder balls, the solder material comprising Cu, and the one or more areas having a surface finish comprising Ni.

Abstract: A microelectronic assembly and method for fabricating the same are described. In an example, a microelectronic assembly includes a microelectronic device having a surface with one or more areas to receive one or more solder balls, the one or more areas having a surface finish comprising Ni. A solder material comprising Cu, such as flux or paste, is applied to the Ni surface finish and one or more solder balls are coupled to the microelectronic device by a reflow process that forms a solder joint between the one or more solder balls, the solder material comprising Cu, and the one or more areas having a surface finish comprising Ni.

Abstract: A microelectronic assembly and method for fabricating the same are described. In an example, a microelectronic assembly includes a microelectronic device having a surface with one or more areas to receive one or more solder balls, the one or more areas having a surface finish comprising Ni. A solder material comprising Cu, such as flux or paste, is applied to the Ni surface finish and one or more solder balls are coupled to the microelectronic device by a reflow process that forms a solder joint between the one or more solder balls, the solder material comprising Cu, and the one or more areas having a surface finish comprising Ni.

Abstract: A microelectronic assembly and method for fabricating the same are described. In an example, a microelectronic assembly includes a microelectronic device having a surface with one or more areas to receive one or more solder balls, the one or more areas having a surface finish comprising Ni. A solder material comprising Cu, such as flux or paste, is applied to the Ni surface finish and one or more solder balls are coupled to the microelectronic device by a reflow process that forms a solder joint between the one or more solder balls, the solder material comprising Cu, and the one or more areas having a surface finish comprising Ni.

Abstract: In one embodiment, the present invention includes a method for placing a thermal interface material (TIM) between a die including a backside metallic (BSM) layer including copper (Cu) and a heat spreader having a contact surface including Cu, where the TIM is formed of an alloy including indium (In) and tin (Sn), and bonding the TIM to the die and the heat spreader to form at least one quaternary intermetallic compound (IMC) layer. Other embodiments are described and claimed.

Abstract: A microelectronic assembly and method for fabricating the same are described. In an example, a microelectronic assembly includes a microelectronic device having a surface with one or more areas to receive one or more solder balls, the one or more areas having a surface finish comprising Ni. A solder material comprising Cu, such as flux or paste, is applied to the Ni surface finish and one or more solder balls are coupled to the microelectronic device by a reflow process that forms a solder joint between the one or more solder balls, the solder material comprising Cu, and the one or more areas having a surface finish comprising Ni.

Abstract: A method of forming a microelectronic package, a microelectronic package formed according to the method, and a system including the microelectronic package. The method comprises: providing a die-substrate combination including: providing a die having die bumping sites thereon each including a layer comprising a stabilizing element; providing a substrate having substrate bumping sites thereon; before heating, placing a solder on at least one of the die bumping sites and the substrate bumping sites, the solder including a first solder element and a second solder element; and placing the die and the substrate in registration with one another to sandwich the solder therebetween. The method further comprises forming a plurality of joint structures including heating the die-substrate combination to reflow the solder.

Abstract: An integrated heat spreader and die coupled with solder are disclosed herein. The heat spreader may have solder reservoirs. Additionally, the heat spreader and die may be coupled during a reflow process where the gaseous pressure surrounding the integrated heat spreader and the die is varied.

Abstract: A solder is deposited on a heat sink. The solder is first reflowed at a first temperature that is below about 120° C. The solder is second heat aged at a temperature that causes the first reflowed solder to have an increased second reflow temperature. The heat aging process results in less compressive stress in a die that uses the solder as a thermal interface material. The solder can have a composition that reflows and adheres to the die and the heat sink without the use of organic fluxes.

Abstract: Integrated heat spreader and die coupled with solder in a manner forming an intermetallic compound having a higher liquidus temperature than the liquidus temperature of the solder used to create the intermetallic compound are described herein.

Abstract: Integrated heat spreader and die coupled with solder. The heat spreader may have solder reservoirs. Additionally, the heat spreader and die may be coupled during a reflow process where the gaseous pressure surrounding the integrated heat spreader and the die is varied.