Abstract: A multi-electron beam image acquiring apparatus includes a stage configured to mount thereon a substrate, an illumination optical system configured to apply multiple primary electron beams to the substrate, a plurality of multipole lenses including at least two stages of multipole lenses, arranged at positions common to a trajectory of the multiple primary electron beams and a trajectory of multiple secondary electron beams which are emitted because the substrate is irradiated with the multiple primary electron beams and each configured to include at least four electrodes and at least four magnetic poles, and a multi-detector configured to detect the multiple secondary electron beams separated from the trajectory of the multiple primary electron beams, wherein one of the plurality of multipole lenses separates the multiple secondary electron beams from the trajectory of the multiple primary electron beams.

Abstract: In a charged particle beam writing method according to one embodiment, a deflector is caused to deflect a charged particle beam and a pattern is written by irradiating a substrate with the charged particle beam. The charged particle beam writing method includes calculating a charge amount distribution based on a charge amount of a beam irradiation region on the substrate immediately after irradiation with the charged particle beam and a diffusion coefficient for electric charge of the substrate, calculating a position shift distribution of the charged particle beam on the substrate based on the charge amount distribution, and correcting an irradiation position of the charged particle beam based on the position shift distribution.

Abstract: An electromagnetic lens includes a coil, and a pole piece configured to include an upper wall, a lower wall, an outer peripheral wall and an inner peripheral wall which are formed using a conductive magnetic material, to surround the coil by the upper wall, the lower wall, the outer peripheral wall and the inner peripheral wall, one of opposite facing surfaces of an upper part and a lower part of the inner peripheral wall and opposite facing surfaces of the upper wall and the inner peripheral wall being insulated electrically, the outer peripheral wall including a laminated structure where a magnetic material and an insulator are alternately laminated in a direction of a central axis of a trajectory of a passing electron beam, and to be covered at least the laminated structure of the outer peripheral wall with an insulator.

Abstract: According to one aspect of the present invention, a multi-beam image acquisition apparatus, includes: an objective lens configured to image multiple primary electron beams on a substrate by using the multiple primary electron beams; a separator configured to have two or more electrodes for forming an electric field and two or more magnetic poles for forming a magnetic field and configured to separate multiple secondary electron beams emitted due to the substrate being irradiated with the multiple primary electron beams from trajectories of the multiple primary electron beams by the electric field and the magnetic field formed; a deflector configured to deflect the multiple secondary electron beams separated; a lens arranged between the objective lens and the deflector and configured to image the multiple secondary electron beams at a deflection point of the deflector; and a detector configured to detect the deflected multiple secondary electron beams.

Abstract: A multi-electron beam image acquisition apparatus includes: a first electromagnetic lens configured to focus the multiple primary electron beams to form an image on the substrate; and a second electromagnetic lens configured to be able to variably adjust a peak position of a magnetic field distribution in a direction of a trajectory central axis of the multiple secondary electron beams, and to focus the multiple secondary electron beams to form an image on either one of a detection surface of the detector and a position conjugate to the detection surface, wherein the first electromagnetic lens focuses, to form an image, the multiple secondary electron beams in a state before being separated from the multiple primary electron beams, and the second electromagnetic lens is arranged between the separator and an image forming point on which the multiple secondary electron beams are focused by the first electromagnetic lens.

Abstract: A multi-electron beam image acquisition apparatus includes a multiple-beam forming mechanism to form multiple primary electron beams, a primary-electron optical system to irradiate 1a sample with the multiple primary electron beams, a beam separator, arranged at a position conjugate to an image plane of each of the multiple primary electron beams, to form an electric field and a magnetic field to be mutually perpendicular, to separate multiple secondary electron beams, emitted from the sample due to irradiation with the multiple primary electron beams, from the multiple primary electron beams by using actions of the electric field and the magnetic field, and to have a lens action on the multiple secondary electron beams in at least one of the electric field and the magnetic field, a multi-detector to detect the multiple secondary electron beams, and a secondary-electron optical system to lead the multiple secondary electron beams to the multi-detector.

Abstract: Aberration corrector includes a lower electrode substrate to be formed therein with plural first passage holes having a first hole diameter and making multiple electron beams pass therethrough, and to be arranged thereon plural electrode sets each being plural electrodes of four or more poles, surrounding a first passage hole, for each of the plural first passage holes, and an upper electrode substrate above the lower one, to be formed therein with plural second passage holes making multiple electron beams pass therethrough, whose size from the top of the upper electrode substrate to the middle of way to the back side of the upper electrode substrate is a second hole diameter, and whose size from the middle to the back side is a third hole diameter larger than each of the first and second hole diameters, wherein a shield electrode is on inner walls of plural second passage holes.

Abstract: Aberration corrector includes a lower electrode substrate to be formed therein with plural first passage holes having a first hole diameter and making multiple electron beams pass therethrough, and to be arranged thereon plural electrode sets each being plural electrodes of four or more poles, surrounding a first passage hole, for each of the plural first passage holes, and an upper electrode substrate above the lower one, to be formed therein with plural second passage holes making multiple electron beams pass therethrough, whose size from the top of the upper electrode substrate to the middle of way to the back side of the upper electrode substrate is a second hole diameter, and whose size from the middle to the back side is a third hole diameter larger than each of the first and second hole diameters, wherein a shield electrode is on inner walls of plural second passage holes.

Abstract: In a charged particle beam writing method according to one embodiment, a deflector is caused to deflect a charged particle beam and a pattern is written by irradiating a substrate with the charged particle beam. The charged particle beam writing method includes calculating a charge amount distribution based on a charge amount of a beam irradiation region on the substrate immediately after irradiation with the charged particle beam and a diffusion coefficient for electric charge of the substrate, calculating a position shift distribution of the charged particle beam on the substrate based on the charge amount distribution, and correcting an irradiation position of the charged particle beam based on the position shift distribution.

Abstract: A multi-charged particle beam irradiation apparatus includes a forming mechanism to form multiple charged particle beams, a multipole deflector array to individually deflect each beam of the multiple charged particle beams so that a center axis trajectory of each beam of the multiple charged particle beams may not converge in a region of the same plane orthogonal to the direction of a central axis of a trajectory of the multiple charged particle beams, and an electron optical system to irradiate a substrate with the multiple charged particle beams while maintaining a state where the multiple charged particle beams are not converged.

Abstract: According to one aspect of the present invention, a multi-beam image acquisition apparatus, includes: an objective lens configured to image multiple primary electron beams on a substrate by using the multiple primary electron beams; a separator configured to have two or more electrodes for forming an electric field and two or more magnetic poles for forming a magnetic field and configured to separate multiple secondary electron beams emitted due to the substrate being irradiated with the multiple primary electron beams from trajectories of the multiple primary electron beams by the electric field and the magnetic field formed; a deflector configured to deflect the multiple secondary electron beams separated; a lens arranged between the objective lens and the deflector and configured to image the multiple secondary electron beams at a deflection point of the deflector; and a detector configured to detect the deflected multiple secondary electron beams.

Abstract: A blanking deflector according to an embodiment includes: a first electrode comprising a first insulator, a first material film coating all surfaces of the first insulator and having lower resistance than the first insulator, and a first low-resistance film coating part or all of surfaces of the first material film and having lower resistance than the first material film; and a second electrode comprising a second insulator, a second material film coating all surfaces of the second insulator and having lower resistance than the second insulator, and a second low-resistance film coating part or all of surfaces of the second material film and having lower resistance than the second material film, wherein the blanking deflector controls whether to irradiate a specimen with a charged particle beam by causing the charged particle beam to pass between the first electrode and the second electrode.

Abstract: A multi-charged particle beam irradiation apparatus includes a forming mechanism to form multiple charged particle beams, a multipole deflector array to individually deflect each beam of the multiple charged particle beams so that a center axis trajectory of each beam of the multiple charged particle beams may not converge in a region of the same plane orthogonal to the direction of a central axis of a trajectory of the multiple charged particle beams, and an electron optical system to irradiate a substrate with the multiple charged particle beams while maintaining a state where the multiple charged particle beams are not converged.

Abstract: A multiple electron beam irradiation apparatus includes a shaping aperture array substrate to form multiple primary electron beams, a plurality of electrode array substrates stacked each to dispose thereon a plurality of electrodes each arranged at a passage position of each of the multiple primary electron beams, each of the multiple primary electron beams surrounded by an electrode of the plurality of electrodes when each of the multiple primary electron beams passes through the passage position, the first wiring and the second wiring applied with one of different electric potentials, and a stage to mount thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode array substrates, wherein, in each of the plurality of electrode array substrates, each of the plurality of electrodes is electrically connected to either one of the first wiring and the second wiring.

Abstract: A multiple electron beam irradiation apparatus includes a forming mechanism which forms multiple primary electron beams; a plurality of electrode substrates being stacked in each of which a plurality of openings of various diameter dimensions are formed, the plurality of openings being arranged at passage positions of the multiple primary electron beams, and through each of which a corresponding one of the multiple primary electron beams passes, the plurality of electrode substrates being able to adjust an image plane conjugate position of each of the multiple primary electron beams depending on a corresponding one of the various diameter dimensions; and a stage which is capable of mounting thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode substrates.

Abstract: A charged-particle beam apparatus is provided with a cathode to emit charged particle beams, an anode to propagate the charged particle beams emitted from the cathode in a sample surface direction, an aperture to propagate a charged particle beam passing through an opening at a predetermined position and of a predetermined shape, among the charged particle beams passing through the anode, in the sample surface direction, and a first electrode that is disposed between the anode and the aperture, and is set at a first electric potential of a polarity repelling a polarity of an ion generated due to collision of a charged particle beam.

Abstract: In one embodiment, a charged particle beam writing apparatus includes an emitter emitting a charged particle beam, a first aperture shaping the charged particle beam, a second aperture shaping the charged particle beam transmitted through the first aperture, a projection lens projecting the charged particle beam transmitted through the first aperture on the second aperture, an object lens focusing the charged particle beam transmitted through the second aperture, the object lens being a magnetic field-type lens, and an electrostatic lens performing focus correction of the charged particle beam in accordance with a surface height of a substrate that is a writing target. The electrostatic lens is disposed inside the object lens, a positive voltage is applied to an electrode of the electrostatic lens. A strength of a magnetic field of the object lens at an upper end of the electrode has a predetermined value or less.

Abstract: Provided is a multiple electron beam inspection apparatus including: an irradiation source irradiating a substrate with multiple electron beams; a stage on which is cable of mounting the substrate; an electromagnetic lens provided between the irradiation source and the stage, the electromagnetic lens generating a lens magnetic field, the multiple electron beams being capable of passing through the lens magnetic field; an electrostatic lens provided in the lens magnetic field, the electrostatic lens including a plurality of through-holes and a plurality of electrodes, the plurality of through-holes having wall surfaces respectively, each of the multiple electron beams being capable of passing through the corresponding each of the plurality of through-holes, each of the plurality of electrodes provided on each of the wall surfaces of the plurality of through-holes, at least one of the through-holes provided apart from a central axis of trajectory of the multiple electron beams having a spiral shape; and a power

Abstract: A multiple-electron-beam irradiation apparatus includes a first electrostatic lens, configured using the substrate used as a bias electrode by being applied with a negative potential, a control electrode to which a control potential is applied and a ground electrode to which a ground potential is applied, configured to provide dynamic focusing of the multiple electron beams onto the substrate, in accordance with change of the height position of the surface of the substrate, by generating an electrostatic field, wherein the control electrode is disposed on an upstream side of a maximum magnetic field of the lens magnetic field of the first electromagnetic lens with respect to a direction of a trajectory central axis of the multiple electron beams, and a ground electrode is disposed on an upstream side of the control electrode with respect to the direction of the trajectory central axis.

Abstract: Aberration corrector includes a lower electrode substrate to be formed therein with plural first passage holes having a first hole diameter and making multiple electron beams pass therethrough, and to be arranged thereon plural electrode sets each being plural electrodes of four or more poles, surrounding a first passage hole, for each of the plural first passage holes, and an upper electrode substrate above the lower one, to be formed therein with plural second passage holes making multiple electron beams pass therethrough, whose size from the top of the upper electrode substrate to the middle of way to the back side of the upper electrode substrate is a second hole diameter, and whose size from the middle to the back side is a third hole diameter larger than each of the first and second hole diameters, wherein a shield electrode is on inner walls of plural second passage holes.