Abstract: A method and apparatus of coordinated in-pixel light detection is provided. In one aspect, the method includes implementing an N-number of avalanche photodiodes inside a pixel circuit of a light detection circuit. The method also includes coordinating an output of the N-number of avalanche photodiodes through a counter circuit. The method further includes reducing a deadtime of the light detection circuit by a factor of ‘N’ through the N-number of avalanche photodiodes and the counter circuit operating in concert. The method furthermore includes measuring an intensity of a light through the light detection circuit. N-number of avalanche photodiodes is in a common well of a semiconductor technology. N-number of avalanche photodiodes is fabricated on a deep submicron semiconductor technology. A fill factor of the pixel circuit improves and a deadtime reduces through fabrication of the avalanche photodiodes in a common well. Also, a photon count rate increases through reducing the deadtime.

Abstract: A single photon counting image sensor and method is provided. In one aspect, the method of an image sensor includes counting through a counter circuit a number of photons detected through a photodiode when a light is incident on the photodiode. The method also includes storing in a memory circuit a time a count of the number of photons take to match a reference count of the number of photons. In another aspect, an image sensor device includes a pixel circuit. The image sensor device also includes a photodiode circuit of the pixel circuit to detect photons when a light is incident on the photodiode circuit. The image sensor device further includes a counter circuit of the pixel circuit coupled to the photodiode circuit to count a number of photons detected when a light is incident on the avalanche photo diode.

Abstract: A high speed analog photon counter and method is provided. In one aspect, the method includes delivering an electric charge to a circuit of the high speed analog photon counter through a current source of the circuit. The method also includes accumulating the electric charge in a capacitor of the circuit electrically coupled to the current source. The method further includes comparing the electric charge accumulated in the capacitor of the circuit with a reference voltage through a comparator of the circuit electrically coupled to an output of the capacitor. The output of the capacitor of the circuit is coupled to an input of the comparator of the circuit, and the reference voltage is coupled to another input of the comparator of the circuit. The method furthermore includes resetting the capacitor of the circuit when the electric charge accumulated in the capacitor of the circuit matches the reference voltage.

Abstract: Disclosed are a system, a method and an apparatus of high speed imaging through in-pixel storage. In one embodiment, an image sensor includes an event sensor to detect events in a process. In addition, the image sensor includes an in-pixel storage to increase an event capture rate of the events through a separation of an event capture operation from other operations of the image sensor.

Abstract: Disclosed are a system, a method and an apparatus of reduction of delay between subsequent capture operations of a light-detection device. In one embodiment, a light-detection circuit includes an avalanche photodiode implemented in a deep submicron CMOS technology. In addition, the light-detection circuit includes a passive quench control circuit to create an avalanche current that generates a high voltage at an output of a second inverter gate of the circuit. The light-detection circuit further includes an active quench control circuit to reduce a dead time of the circuit. The light-detection circuit also includes a reset circuit to create a low voltage at an output of the second inverter gate and to create an active reset through a PMOS transistor of the light-detection circuit.