Patents by Inventor Muralikrishnan Balakrishnan
Muralikrishnan Balakrishnan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130334483Abstract: A method of forming a resistive memory element comprises forming an oxide material over a first electrode. The oxide material is exposed to a plasma process to form a treated oxide material. A second electrode is formed on the treated oxide material. Additional methods of forming a resistive memory element, as well as related resistive memory elements, resistive memory cells, and resistive memory devices are also described.Type: ApplicationFiled: June 14, 2012Publication date: December 19, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: D. V. Nirmal Ramaswamy, Sanh D. Tang, Alessandro Torsi, Muralikrishnan Balakrishnan, Xiaonan Chen, John K. Zahurak
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Patent number: 8421048Abstract: An example memory cell may have at least a tunneling region disposed between a conducting region and a metal region, wherein the tunneling region can have at least an active interface regio disposed between a first tunneling barrier and a second tunneling barrier. A high resistive film is formed in the interface region with migration of ions from both the metal and conducting regions responsive to a write current to program the memory cell to a selected resistive state.Type: GrantFiled: July 13, 2009Date of Patent: April 16, 2013Assignee: Seagate Technology LLCInventors: Venugopalan Vaithyanathan, Markus Jan Peter Siegert, Wei Tian, Muralikrishnan Balakrishnan, Insik Jin
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Patent number: 8309945Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.Type: GrantFiled: February 15, 2012Date of Patent: November 13, 2012Assignee: Seagate Technology LLCInventors: Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov, Ming Sun, Dimitar Velikov Dimitrov
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Publication number: 20120273744Abstract: A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.Type: ApplicationFiled: July 12, 2012Publication date: November 1, 2012Applicant: SEAGATE TECHNOLOGY LLCInventors: Andreas Roelofs, Markus Siegert, Venugopalan Vaithyanathan, Wei Tian, Yongchul Ahn, Muralikrishnan Balakrishnan, Olle Heinonen
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Patent number: 8288254Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.Type: GrantFiled: February 8, 2012Date of Patent: October 16, 2012Assignee: Seagate Technology LLCInventors: Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov, Ming Sun, Dimitar Velikov Dimitrov
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Patent number: 8227783Abstract: A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.Type: GrantFiled: July 13, 2009Date of Patent: July 24, 2012Assignee: Seagate Technology LLCInventors: Andreas Roelofs, Markus Siegert, Venugopalan Vaithyanathan, Wei Tian, Yongchul Ahn, Muralikrishnan Balakrishnan, Olle Heinonen
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Publication number: 20120142169Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.Type: ApplicationFiled: February 8, 2012Publication date: June 7, 2012Applicant: SEAGATE TECHNOLOGY LLCInventors: Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov, Ming Sun, Dimitar V. Dimitrov
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Publication number: 20120138884Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.Type: ApplicationFiled: February 15, 2012Publication date: June 7, 2012Applicant: SEAGATE TECHNOLOGY LLC.Inventors: Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov, Ming Sun, Dimitar V. Dimitrov
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Patent number: 8134138Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.Type: GrantFiled: January 30, 2009Date of Patent: March 13, 2012Assignee: Seagate Technology LLCInventors: Tian Wei, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov, Ming Sun, Dimitar Velikov Dimitrov
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Patent number: 8054706Abstract: A method and apparatus for protecting an electrical device using a non-volatile memory cell, such as an STRAM or RRAM memory cell. In some embodiments, a memory element is connected in parallel with a sensor element, where the memory element is configured to be repetitively reprogrammable between a high resistance state and a low resistance state. The memory element is programmed to the low resistance state when the sensor element is in a non-operational state and reprogrammed to the high resistance state when the sensor element is in an operational state.Type: GrantFiled: March 19, 2009Date of Patent: November 8, 2011Assignee: Seagate Technology LLCInventors: Phillip Mark Goldman, Muralikrishnan Balakrishnan
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Publication number: 20110007544Abstract: A non-volatile memory cell and method of use therefore are disclosed. In accordance with various embodiments, the memory cell comprises a tunneling region disposed between a conducting region and a metal region, wherein the tunneling region comprises an active interface region disposed between a first tunneling barrier and a second tunneling barrier. A high resistive film is formed in the active interface region with migration of ions from both the metal and conducting regions responsive to a write current to program the memory cell to a selected resistive state.Type: ApplicationFiled: July 13, 2009Publication date: January 13, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Venugopalan Vaithyanathan, Markus Jan Peter Siegert, Wei Tian, Muralikrishnan Balakrishnan, Insik Jin
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Publication number: 20110006275Abstract: A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.Type: ApplicationFiled: July 13, 2009Publication date: January 13, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Andreas Roelofs, Markus Siegert, Venugopalan Vaithyanathan, Wei Tian, Yongchul Ahn, Muralikrishnan Balakrishnan, Olle Heinonen
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Publication number: 20100241787Abstract: A method and apparatus for protecting an electrical device using a non-volatile memory cell, such as an STRAM or RRAM memory cell. In some embodiments, a memory element is connected in parallel with a sensor element, where the memory element is configured to be repetitively reprogrammable between a high resistance state and a low resistance state. The memory element is programmed to the low resistance state when the sensor element is in a non-operational state and reprogrammed to the high resistance state when the sensor element is in an operational state.Type: ApplicationFiled: March 19, 2009Publication date: September 23, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Phillip Mark Goldman, Muralikrishnan Balakrishnan
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Publication number: 20100193758Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.Type: ApplicationFiled: January 30, 2009Publication date: August 5, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov, Ming Sun, Dimitar V. Dimitrov
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Publication number: 20100109085Abstract: Memory elements and methods for making memory elements. One method of making a memory element includes forming a first electrode, forming an electrically conductive current densifying element and a memory cell on the first electrode, the memory cell and the current densifying element adjacent to each other. A second electrode is formed over the current densifying element and the memory cell. The memory elements may be resistance random access memory elements.Type: ApplicationFiled: March 20, 2009Publication date: May 6, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Jinyoung Kim, Yongchul Ahn, Muralikrishnan Balakrishnan, Tangshiun Yeh, Antoine Khoueir
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Publication number: 20090283740Abstract: A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.Type: ApplicationFiled: May 29, 2009Publication date: November 19, 2009Applicant: AXON TECHNOLOGIES CORPORATIONInventors: Michael N. Kozicki, Muralikrishnan Balakrishnan, Maria Mitkova
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Patent number: 7402847Abstract: A programmable logic circuit, including programmable memory element, suitable for microprocessor applications, and a method of using the circuit are disclosed. The programmable circuit includes at least one logic cell, columns and rows of wires coupled to the logic cell, and a programmable memory element located at the intersection of two wires. The programmable element acts as a switch and as memory for the logic circuit.Type: GrantFiled: April 13, 2006Date of Patent: July 22, 2008Assignee: Axon Technologies CorporationInventors: Michael N Kozicki, Maria Mitkova, Chakravarthy Gopalan, Muralikrishnan Balakrishnan
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Patent number: 7385219Abstract: A microelectronic programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.Type: GrantFiled: May 4, 2007Date of Patent: June 10, 2008Assignee: A{umlaut over (x)}on Technologies CorporationInventors: Michael N. Kozicki, Muralikrishnan Balakrishnan, Maria Mitkova
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Patent number: 7372065Abstract: A microelectronic programmable structure suitable for storing information, a device including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.Type: GrantFiled: June 8, 2007Date of Patent: May 13, 2008Assignee: Axon Technologies CorporationInventors: Michael N. Kozicki, Muralikrishnan Balakrishnan
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Publication number: 20080006812Abstract: A microelectronic programmable structure suitable for storing information, a device including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.Type: ApplicationFiled: June 8, 2007Publication date: January 10, 2008Applicant: AXON TECHNOLOGIES CORPORATIONInventors: Michael Kozicki, Muralikrishnan Balakrishnan