Patents by Inventor Mustafa Pinarbasi

Mustafa Pinarbasi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Roll to Roll Evaporation Tool for Solar Absorber Precursor Formation
    Publication number: 20090092744
    Abstract: An evaporation tool for forming a dopant structure on a front surface of a continuous workpiece, wherein the front surface includes a precursor layer to form Group IBIIIAVIA absorbers for solar cells and the dopant structure is used to introduce dopants into the precursor layer. The tool includes at least a first vapor source station to deposit a Group VIA material, such as Se, and a second vapor station to deposit a dopant material, such as Na, onto the continuous workpiece. A moving assembly of the tool holds and moves the continuous workpiece within the tool by feeding the continuous workpiece from a first end and taking up from a second end of the tool. A support assembly of the tool contacts a back surface of the continuous workpiece to remove the heat from and apply tension to the continuous workpiece during the process.
    Type: Application
    Filed: October 5, 2007
    Publication date: April 9, 2009
    Inventors: Mustafa Pinarbasi, Bulent M. Basol
  • Magnetoresistive/inductive write head assembly formed with seed layers having a uniform thickness
    Patent number: 7362543
    Abstract: The present invention presents a method for fabricating coil elements for magnetic write heads. A coil pattern is formed on a substrate using photolithographic techniques. The substrate is etched using reactive ion etching, creating a coil-shaped trench in the substrate. Thin film seed layers are deposited using ion beam deposition. The substrate is electroplated with metal filling the trenches with metal. The substrate is chemical mechanical polished to remove excess metal and planarize the air bearing surface of the write head.
    Type: Grant
    Filed: April 18, 2005
    Date of Patent: April 22, 2008
    Assignee: International Business Machines Corporation
    Inventors: Richard Hsiao, Quang Le, Paul P. Nguyen, Son Van Nguyen, Mustafa Pinarbasi, Patrick R. Webb, Howard G. Zolla
  • METHOD FOR MANUFACTURING A MAGNETORESISTIVE SENSOR HAVING A NOVEL JUNCTION STRUCTURE FOR IMPROVED TRACK WIDTH DEFINITION AND PINNED LAYER STABILITY
    Publication number: 20080062584
    Abstract: A method for manufacturing a magnetoresistive sensor having improved pinned layer stability at small track widths. The sensor has substantially vertical side walls that define the track width of the sensor. The free layer terminates at the substantially vertical side walls, but the pinned layer structure or a portion thereof extends beyond the track width region into the field. The extended pinned layer structure provides improved resistance to amplitude flipping, while allowing the track width to remain small.
    Type: Application
    Filed: November 12, 2007
    Publication date: March 13, 2008
    Inventors: James Freitag, Wipul Jayasekara, Mustafa Pinarbasi
  • Lead overlay sensor with improved current path
    Patent number: 7327538
    Abstract: In a lead overlay (LOL) type of read head first and second insulation layers are employed with the first insulation layer being located between a top surface of a first hard bias layer and a first lead layer and the second insulation layer is located between the top surface of a second hard bias layer and a second lead layer for minimizing a shunting of a sense current through the hard bias layers into a read sensor.
    Type: Grant
    Filed: June 29, 2006
    Date of Patent: February 5, 2008
    Assignee: International Business Machines Corporation
    Inventors: Ashok Lahiri, Mustafa Pinarbasi
  • Method of fabrication for read head having shaped read sensor-biasing layer junctions using partial milling
    Publication number: 20080002310
    Abstract: A method is disclosed for fabricating a read head for a magnetic disk drive having a read head sensor and a hard bias layer, where the read head has a shaped junction between the read head sensor and the hard bias layer. The method includes providing a layered wafer stack to be shaped. A single- or multi-layered photoresist mask having no undercut is deposited upon the layered wafer stack to be shaped. The layered wafer stack is shaped by the output of a milling source, where the shaping includes partial milling to within a partial milling range to form a shaped junction. A hard bias layer is then deposited which is in contact with the shaped junction of the wafer stack.
    Type: Application
    Filed: September 4, 2007
    Publication date: January 3, 2008
    Inventors: Marie-Claire Cyrille, Wipul Jayasckara, Mustafa Pinarbasi
  • Read sensors of the CPP type having nitrogenated hard bias layers and method of making the same
    Publication number: 20070253123
    Abstract: A read sensor of the current-perpendicular-to-the-planes (CPP) type includes a sensor stack structure formed in a central region between first and second shield layers which serve as leads for the read sensor; insulator layers formed in side regions adjacent the central region; seed layer structures formed over the insulator layers in the side regions; and hard bias layers formed over the seed layer structures in the side regions. The hard bias layers are made of a nitrogenated cobalt-based alloy, such as nitrogenated cobalt-platinum (CoPt). Suitable if not exemplary coercivity and squareness properties are exhibited using the nitrogenated cobalt-based alloy. The hard bias layers may be formed by performing an ion beam deposition of cobalt-based materials using a sputtering gas (e.g. xenon) and nitrogen as a reactive gas.
    Type: Application
    Filed: April 9, 2007
    Publication date: November 1, 2007
    Inventors: James Freitag, Mustafa Pinarbasi
  • Method for fabricating seed layer for spin valve sensor for magnetic heads for hard disk drives
    Patent number: 7283334
    Abstract: A magnetic head having a spin valve sensor that is fabricated utilizing an Al2O3, NiMnO, NiFeCr seed layer upon which a typical PtMn spin valve sensor layer structure is subsequently fabricated. The preferred embodiment fabrication process of the NiFeCr layer includes the overdeposition of the layer to a first thickness of from 15 ? to 45 ? followed by the etching back of the seed layer of approximately 5 ? to approximately 15 ? to its desired final thickness of approximately 10 ? to 40 ?. The Cr at. % composition in the NiFeCr layer is preferably from approximately 35 at. % to approximately 46 at. %. The crystal structure of the surface of the etched back NiFeCr layer results in an improved crystal structure to the subsequently fabricated spin valve sensor layers, such that the fabricated spin valve exhibits increased ?R/R and reduced coercivity.
    Type: Grant
    Filed: June 15, 2006
    Date of Patent: October 16, 2007
    Assignee: International Business Machines Corporation
    Inventor: Mustafa Pinarbasi
  • METHOD AND APPARATUS FOR PROVIDING MAGNETOSTRICTION CONTROL IN A FREELAYER OF A MAGNETIC MEMORY DEVICE
    Publication number: 20070217088
    Abstract: A method and apparatus for providing magnetostriction control in a synthetic free layer of a magnetic memory device is disclosed. A first free layer of CoFe alloy has a first thickness. A second free layer of NiFe alloy has a second thickness. At least one of the CoFe alloy and NiFe alloy includes at least one of B, P, Si, Nb, Zr, Hf, Ta and Ti. The relative thicknesses of the first and second free layer are modified to obtain a desired magnetostriction without a change in the magenetoristance ratio, ?R/R. The synthetic free layer may also be configured to have a net magnetic moment. A sensor may be a current-in-plane or a current-perpendicular-to-the-plane sensor. The sensor also may be configured to be a GMR sensor or a TMR sensor.
    Type: Application
    Filed: May 21, 2007
    Publication date: September 20, 2007
    Inventors: James Freitag, Mustafa Pinarbasi
  • High coercivity hard magnetic seedlayer
    Publication number: 20070206335
    Abstract: Methods and apparatus provide improved properties of a hard bias layer of a magnetoresistance sensor. The properties of the hard bias layer are improved by using a multilayer seed structure that includes a chromium-containing layer disposed between two tungsten-containing layers.
    Type: Application
    Filed: March 2, 2006
    Publication date: September 6, 2007
    Inventors: James Freitag, Mustafa Pinarbasi
  • Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip
    Publication number: 20070195468
    Abstract: In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.
    Type: Application
    Filed: December 13, 2005
    Publication date: August 23, 2007
    Inventors: James Freitag, Hardayal Gill, Jih-Shiuan Luo, Mustafa Pinarbasi
  • Seedlayer for high hard bias layer coercivity
    Publication number: 20070188935
    Abstract: A seedlayer structure for a high coercivity hard bias layer is disclosed, having at least one bi-layer seedlayer, including a CrMo layer, and a W layer fabricated on the CrMo layer. A hard bias layer is fabricated on the bi-layer seedlayer. Preferably, the seedlayer structure includes two bi-layer seedlayers, which including a first CrMo layer, a first W layer fabricated on the first CrMo layer, a second CrMo layer fabricated on the first W layer, and a second W layer fabricated on the second CrMo layer. Also disclosed is a high coercivity hard bias stack structure, a magnetic read head for a disk drive having a high coercivity hard bias stack structure and a method for fabricating a coercivity hard bias layer for a magnetic read head.
    Type: Application
    Filed: February 13, 2006
    Publication date: August 16, 2007
    Inventors: James Freitag, Mohamad Krounbi, Mustafa Pinarbasi
  • Methods and apparatus for improved read sensors of the CPP type using a multi-layered seed layer structure having a nitrogenated nickel-tantalum layer
    Publication number: 20070183099
    Abstract: A magnetic head with improved hard magnet properties includes a sensor stack structure of current-perpendicular-to-the-planes (CPP) type formed in a central region between first and second shield layers, and a multi-layered seed layer structure formed in side regions adjacent the central region. The multi-layered structure has a first layer including nitrogenated nickel-tantalum (NiTa+N) and a second layer including chromium-molybdenum (CrMo), which are formed over an insulator in the side regions. A hard bias layer formed over the multi-layered structure is preferably a cobalt-based alloy. Methods of making the magnetic head are also described.
    Type: Application
    Filed: April 5, 2007
    Publication date: August 9, 2007
    Inventor: Mustafa Pinarbasi
  • Method to achieve low and stable ferromagnetic coupling field
    Patent number: 7244341
    Abstract: A method for making a spin valve includes providing a substrate; depositing a first ferromagnetic layer having a first surface on the substrate; depositing a spacer layer having a second surface; depositing a second ferromagnetic layer, wherein the spacer layer is disposed between the first and second ferromagnetic layers; and exposing one or more of the first and second surfaces to an oxygen partial pressure, then decreasing the oxygen partial pressure before depositing a subsequent layer. One or more of the first and second surfaces may be exposed to an oxygen partial pressure of between about 1×10?7 Torr and about 5×10?5 Torr.
    Type: Grant
    Filed: October 23, 2003
    Date of Patent: July 17, 2007
    Assignee: International Business Machines Corporation
    Inventor: Mustafa Pinarbasi
  • Narrow gap current perpendicular to plane (CPP) magnetoresistive sensor
    Publication number: 20070146939
    Abstract: A current perpendicular to plane (CPP) magnetoresistive sensor that avoids spin torque noise while having high dr/R performance and small gap. The sensor is a dual magnetoresistive sensor having first and second pinned layers and a free layer disposed between the two pinned layers. One of the pinned layers is pinned by exchange coupling with an AFM layer, while the other pinned layer is self pinned by a shape enhanced magnetic anisotropy without the use of an AFM layer. The self pinned layer extends from the ABS to an extended stripe height distance that is greater than the stripe height distance of the AFM pinned layer and the free layer.
    Type: Application
    Filed: December 27, 2005
    Publication date: June 28, 2007
    Inventor: Mustafa Pinarbasi
  • GMR AND MR ENHANCING SEEDLAYERS FOR SELF PINNED SPIN VALVES
    Publication number: 20070139828
    Abstract: A magnetic head includes a seed layer structure comprising Ta and NiFeCr seed layers; an antiparallel (AP) pinned layer structure formed above the NiFeCr seed layer; a free layer positioned above the AP pinned layer structure; and a layer of metal oxide positioned between the free layer and the AP pinned layer structure. A magnetic head in another embodiment includes a seed layer structure comprising Al2O3, Ta, and NiFeCr seed layers, wherein a thickness of the NiFeCr seed layer is less than about a thickness of at least one of the Al2O3 and Ta seed layers; an antiparallel (AP) pinned layer structure formed above the NiFeCr seed layer; and a free layer positioned above the AP pinned layer structure. In another embodiment, a thickness of the NiFeCr seed layer is greater than about a thickness of at least one of the Al2O3 and Ta seed layers.
    Type: Application
    Filed: February 27, 2007
    Publication date: June 21, 2007
    Inventor: Mustafa Pinarbasi
  • Current perpendicular to plane magnetoresistive sensor having a shape enhanced pinned layer and an in stack bias structure
    Publication number: 20070133133
    Abstract: A magnetoresistive sensor having an in stack bias structure and a pinned layer having shape enhanced anisotropy. The sensor may be a partial mill design wherein the track width of the sensor is defined by the width of the free layer and the pinned layers extend beyond the trackwidth of the sensor. The sensor has an active area defined by the stripe height of the free layer. The pinned layer extends beyond the stripe height defined by the free layer, thus providing the pinned layer with the shape enhanced anisotropy. The pinned layer structure can be pinned by exchange coupling with a layer of antiferromagnetic material (AFM) layer, with pinning robustness being improved by the shape enhanced anisotropy, or can be a self pinned structure which is pinned by a combination of magnetostriction, AP coupling and shape enhanced anisostropy.
    Type: Application
    Filed: December 14, 2005
    Publication date: June 14, 2007
    Inventors: James Freitag, Kuok Ho, Mustafa Pinarbasi, Ching Tsang
  • Method for fabricating a magnetic head
    Patent number: 7228618
    Abstract: A magnetic head having a spin valve sensor that is fabricated utilizing an Al2O3, NiMn0, Si seed layer upon which a PtMn spin valve sensor layer structure is subsequently fabricated. In the preferred embodiment, the Si layer has a thickness of approximately 20 ? and the PtMn layer has a thickness of approximately 120 ?. An alternative fabrication process of the Si layer includes the overdeposition of the layer to a first thickness of from 15 ? to 45 ? followed by the etching back of the seed layer of approximately 5 ? to approximately 15 ? to its desired final thickness of approximately 20 ?. The Si layer results in an improved crystal structure to the subsequently fabricated PtMn and other spin valve sensor layers, such that the fabricated spin valve is thinner and exhibits increased ?R/R and reduced coercivity.
    Type: Grant
    Filed: October 20, 2004
    Date of Patent: June 12, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Mustafa Pinarbasi, Patrick Rush Webb
  • Magnetoresitive sensor having an enhanced lead overlay design and shape enhanced pinning
    Publication number: 20070127167
    Abstract: A magnetoresistive sensor having a lead overlay defined trackwidth and a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that maintains pinning of the pinned layer moment. The extended portion of the pinned layer has sides beyond the stripe height that are perfectly aligned with the sides of the sensor within the stripe height. This perfect alignment is made possible by a manufacturing method that uses a mask structure for more than one manufacturing phase, eliminating the need for multiple mask alignments. The lead overlay design allows narrow, accurate trackwidth definition.
    Type: Application
    Filed: December 7, 2005
    Publication date: June 7, 2007
    Inventors: James Freitag, Kuok Ho, Mustafa Pinarbasi, Ching Tsang
  • Self-pinned CPP magnetoresistive sensor
    Patent number: 7224556
    Abstract: A charge-perpendicular-to-plane self-pinned magnetic tunnel junction sensor is provided. Additionally, a disk drive using a charge-perpendicular-to-plane self-pinned magnetic tunnel junction sensor as the read element is provided.
    Type: Grant
    Filed: October 24, 2002
    Date of Patent: May 29, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventor: Mustafa Pinarbasi
  • Oblique angle etched underlayers for improved exchange biased structures in a magnetoresitive sensor
    Publication number: 20070109692
    Abstract: A magnetoresistive sensor having improved pinning field strength. The sensor includes a pinned layer structure pinned by exchange coupling with an antiferromagnetic (AFM) layer. The AFM layer is constructed upon an under layer having treated surface with an anisotropic roughness. The anisotropic roughness, produced by an angled ion etch, results in improved pinning strength. The underlayer may include a seed layer and a thin layer of crystalline material such as PtMn formed over the seed layer. The magnetic layer may include a first sub-layer of NiFeCr and a second sub-layer of NiFe formed there over. The present invention also includes a magnetoresistive sensor having a magnetic layer deposited on an underlayer (such as a non-magnetic spacer) having a surface treated with an anisotropic texture. An AFM layer is then deposited over the magnetic layer.
    Type: Application
    Filed: November 17, 2005
    Publication date: May 17, 2007
    Inventors: Matthew Carey, Jeffrey Childress, James Freitag, Stefan Maat, Mustafa Pinarbasi