Abstract: Technologies for issuing commands on selected memory devices includes an apparatus that includes a data storage controller and multiple non-volatile, write in place, byte or block addressable memory devices. The memory devices are arranged in one or more ranks, and the memory devices in each rank are connected to a same communication channel. The data storage controller is to select a subgroup of the plurality of the memory devices in a rank without modifying an identifier of each memory device, and issue a command to operate on data of the selected subgroup.

Abstract: Data reliability and integrity may be compromised when memory resources used to store the data reach elevated temperatures. A sensor in the memory resource may monitor the temperature of the memory resource in real-time. A comparator in the memory resource may indicate a high temperature condition to a memory controller. The memory controller, in response to the high temperature condition, can restrict or halt data flow to the memory resource. When the real-time temperature of the memory resource falls below a defined threshold, the memory controller may resume data flow to the memory resource.

Abstract: A method is described. The method includes receiving an indication of an activity of load circuitry of a power supply. The method includes, in response to the indication, generating a first signal that describes the activity and a second signal that describes whether the event is initiating or completing. The method includes determining a weight amount from the first signal and adjusting a credit count by the weight amount up or down based on the second signal. The method includes comparing the credit count against a first threshold. The method includes calculating an average credit count that accounts for the credit count and previous credit counts and comparing the average credit count against a second threshold. The method includes adjusting an activity level of the load circuitry if either threshold is crossed.

Abstract: A semiconductor chip comprising memory controller circuitry having interface circuitry to couple to a memory channel. The memory controller includes first logic circuitry to implement a first memory channel protocol on the memory channel. The first memory channel protocol is specific to a first volatile system memory technology. The interface also includes second logic circuitry to implement a second memory channel protocol on the memory channel. The second memory channel protocol is specific to a second non volatile system memory technology.

Abstract: Provided are an apparatus, system and method to determine whether to use a low or high read voltage. First level indications of write addresses, for locations in the non-volatile memory to which write requests have been directed, are included in a first level data structure. For a write address of the write addresses having a first level indication in the first level data structure, the first level indication of the write address is removed from the first level data structure and a second level indication for the write address is added to a second level data structure to free space in the first level data structure to indicate a further write address. A first voltage level is used to read data from read addresses mapping to one of the first and second level indications in the first and the second level data structures, respectively.

Abstract: In response to a write operation on a storage element in a non-volatile memory device, a count provided by a global counter is stored to indicate a time at which the write operation occurs on the storage element. In response to receiving a request perform a read operation on the storage element, a determination is made of a demarcation voltage to apply for performing the read operation on the storage element, based on a progress of the global counter since the write operation on the storage element.

Abstract: A system and method are described for integrating a memory and storage hierarchy including a non-volatile memory tier within a computer system. In one embodiment, PCMS memory devices are used as one tier in the hierarchy, sometimes referred to as “far memory.” Higher performance memory devices such as DRAM placed in front of the far memory and are used to mask some of the performance limitations of the far memory. These higher performance memory devices are referred to as “near memory.

Abstract: A semiconductor chip comprising memory controller circuitry having interface circuitry to couple to a memory channel. The memory controller includes first logic circuitry to implement a first memory channel protocol on the memory channel. The first memory channel protocol is specific to a first volatile system memory technology. The interface also includes second logic circuitry to implement a second memory channel protocol on the memory channel. The second memory channel protocol is specific to a second non volatile system memory technology. The second memory channel protocol is a transactional protocol.

Abstract: A system and method are described for integrating a memory and storage hierarchy including a non-volatile memory tier within a computer system. In one embodiment, PCMS memory devices are used as one tier in the hierarchy, sometimes referred to as “far memory.” Higher performance memory devices such as DRAM placed in front of the far memory and are used to mask some of the performance limitations of the far memory. These higher performance memory devices are referred to as “near memory.

Abstract: Data reliability and integrity may be compromised when memory resources used to store the data reach elevated temperatures. A sensor in the memory resource may monitor the temperature of the memory resource in real-time. A comparator in the memory resource may indicate a high temperature condition to a memory controller. The memory controller, in response to the high temperature condition, can restrict or halt data flow to the memory resource. When the real-time temperature of the memory resource falls below a defined threshold, the memory controller may resume data flow to the memory resource.

Abstract: A method is described. The method includes receiving an indication of an activity of load circuitry of a power supply. The method includes, in response to the indication, generating a first signal that describes the activity and a second signal that describes whether the event is initiating or completing. The method includes determining a weight amount from the first signal and adjusting a credit count by the weight amount up or down based on the second signal. The method includes comparing the credit count against a first threshold. The method includes calculating an average credit count that accounts for the credit count and previous credit counts and comparing the average credit count against a second threshold. The method includes adjusting an activity level of the load circuitry if either threshold is crossed.

Abstract: A semiconductor chip comprising memory controller circuitry having interface circuitry to couple to a memory channel. The memory controller includes first logic circuitry to implement a first memory channel protocol on the memory channel. The first memory channel protocol is specific to a first volatile system memory technology. The interface also includes second logic circuitry to implement a second memory channel protocol on the memory channel. The second memory channel protocol is specific to a second non volatile system memory technology.

Abstract: A semiconductor chip comprising memory controller circuitry having interface circuitry to couple to a memory channel. The memory controller includes first logic circuitry to implement a first memory channel protocol on the memory channel. The first memory channel protocol is specific to a first volatile system memory technology. The interface also includes second logic circuitry to implement a second memory channel protocol on the memory channel. The second memory channel protocol is specific to a second non volatile system memory technology. The second memory channel protocol is a transactional protocol.

Abstract: A system and method are described for integrating a memory and storage hierarchy including a non-volatile memory tier within a computer system. In one embodiment, PCMS memory devices are used as one tier in the hierarchy, sometimes referred to as “far memory.” Higher performance memory devices such as DRAM placed in front of the far memory and are used to mask some of the performance limitations of the far memory. These higher performance memory devices are referred to as “near memory.

Abstract: A system and method are described for integrating a memory and storage hierarchy including a non-volatile memory tier within a computer system. In one embodiment, PCMS memory devices are used as one tier in the hierarchy, sometimes referred to as “far memory.” Higher performance memory devices such as DRAM placed in front of the far memory and are used to mask some of the performance limitations of the far memory. These higher performance memory devices are referred to as “near memory.

Abstract: A system and method are described for integrating a memory and storage hierarchy including a non-volatile memory tier within a computer system. In one embodiment, PCMS memory devices are used as one tier in the hierarchy, sometimes referred to as “far memory.” Higher performance memory devices such as DRAM placed in front of the far memory and are used to mask some of the performance limitations of the far memory. These higher performance memory devices are referred to as “near memory.

Abstract: Method and apparatus to scrub memory is disclosed. A patrol request, for example a read/write request, may be raised to the memory command scheduler in an out of order memory controller to scrub the memory. The patrol read/write request may be raised as and when patrol interval timer expires. The patrol read/write request may also be raised based on presence of a transaction in-flight to the memory, retry response from the memory command scheduler and correctable or non-correctable error response from the memory command scheduler. An interrupt may be raised to a processor upon completion response from the memory command scheduler.

Abstract: Method and apparatus to scrub memory is disclosed. A patrol request, for example a read/write request, may be raised to the memory command scheduler in an out of order memory controller to scrub the memory. The patrol read/write request may be raised as and when patrol interval timer expires. The patrol read/write request may also be raised based on presence of a transaction in-flight to the memory, retry response from the memory command scheduler and correctable or non-correctable error response from the memory command scheduler. An interrupt may be raised to a processor upon completion response from the memory command scheduler.

Abstract: Disclosed is an apparatus, method, and system to precisely position packets for a queue based memory controller. The memory controller operates with a queue having a plurality of queue positions. A timestamp logic circuit in communication with the memory controller designates scheduled times for each queue position. The memory controller may schedule a packet for a queue position at a scheduled time. The timestamp logic circuit utilizes a plurality of bubble adders to add bubbles to queue positions to adjust the scheduled time for a packet to precisely position the packet.

Abstract: Disclosed is an apparatus, method, and system to precisely position packets for a queue based memory controller. The memory controller operates with a queue having a plurality of queue positions. A timestamp logic circuit in communication with the memory controller designates scheduled times for each queue position. The memory controller may schedule a packet for a queue position at a scheduled time. The timestamp logic circuit utilizes a plurality of bubble adders to add bubbles to queue positions to adjust the scheduled time for a packet to precisely position the packet.