Abstract: A power conversion device configured to convert electric power using a semiconductor device includes a MOS controlled diode 1 made up of an n+ layer 11, an n? layer 12, a p? layer 13, a p+ layer 14, a cathode electrode 21, anode electrodes 22 and 220, and gate electrodes 23 and a voltage applying unit configured to apply forward voltage between the anode electrodes 22 and 220 and the cathode electrode 21 during a forward direction, to apply a reverse voltage between the anode electrodes 20 and 220 and the cathode electrode 21 during a reverse recovery, and to control a potential of the gate electrode 23 to a potential at which an inversion layer is formed in a third semiconductor layer with respect to a potential of the anode electrodes 22 and 220 before the reverse recovery. In this way, a power conversion device, a method of controlling a power conversion device, a semiconductor device, and a method of controlling a semiconductor device that are capable of further reducing power loss are provided.

Abstract: A current switching semiconductor device to be used in a power conversion device achieves both a low conduction loss and a low switching loss. The semiconductor device includes the IGBT in which only Gc gates are provided and an impurity concentration of the p type collector layer is high, and the IGBT in which the Gs gates and the Gc gates are provided and an impurity concentration of the p type collector layer is low. When the semiconductor device is turned off, the semiconductor device transitions from a state in which a voltage lower than a threshold voltage is applied to both the Gs gates and the Gc gates to a state in which a voltage equal to or higher than the threshold voltage is applied to the Gc gates prior to the Gs gates.

Abstract: The invention provides an inexpensive flywheel diode having a low power loss. A semiconductor substrate side of a gate electrode provided on a surface of an anode electrode side of a semiconductor substrate including silicon is surrounded by a p layer, an n layer, and a p layer via a gate insulating film. The anode electrode is in contact with the p layer with a low resistance, and is also in contact with the n layer or the p layer, and a Schottky diode is formed between the anode electrode and the n layer or the p layer.

Abstract: A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.

Abstract: A current switching semiconductor device to be used in a power conversion device achieves both a low conduction loss and a low switching loss. The semiconductor device includes the IGBT in which only Gc gates are provided and an impurity concentration of the p type collector layer is high, and the IGBT in which the Gs gates and the Gc gates are provided and an impurity concentration of the p type collector layer is low. When the semiconductor device is turned off, the semiconductor device transitions from a state in which a voltage lower than a threshold voltage is applied to both the Gs gates and the Gc gates to a state in which a voltage equal to or higher than the threshold voltage is applied to the Gc gates prior to the Gs gates.

Abstract: The invention provides an inexpensive flywheel diode having a low power loss. A semiconductor substrate side of a gate electrode provided on a surface of an anode electrode side of a semiconductor substrate including silicon is surrounded by a p layer, an n layer, and a p layer via a gate insulating film. The anode electrode is in contact with the p layer with a low resistance, and is also in contact with the n layer or the p layer, and a Schottky diode is formed between the anode electrode and the n layer or the p layer.

Abstract: To provide a semiconductor device in which an IGBT having two gate terminals is driven by one control signal, and a continuous ON state and an ON state twice for one on-pulse signal are avoided. A semiconductor device includes: a control signal input terminal; an IGBT having a first gate terminal and a second gate terminal; a delay unit configured to delay an input signal for a delay time; and a logical product unit configured to calculate a logical product of a first input terminal and a second input terminal. The control signal input terminal is connected to an input terminal of the delay unit and a second input terminal of the logical product unit. An output terminal of the delay unit is connected to the first gate terminal of the IGBT and a first input terminal of the logical product unit. An output terminal of the logical product unit is connected to the second gate terminal of the IGBT.

Abstract: To provide a semiconductor device in which an IGBT having two gate terminals is driven by one control signal, and a continuous ON state and an ON state twice for one on-pulse signal are avoided. A semiconductor device includes: a control signal input terminal; an IGBT having a first gate terminal and a second gate terminal; a delay unit configured to delay an input signal for a delay time; and a logical product unit configured to calculate a logical product of a first input terminal and a second input terminal. The control signal input terminal is connected to an input terminal of the delay unit and a second input terminal of the logical product unit. An output terminal of the delay unit is connected to the first gate terminal of the IGBT and a first input terminal of the logical product unit. An output terminal of the logical product unit is connected to the second gate terminal of the IGBT.

Abstract: The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.

Abstract: An electric power converter (100) which is provided with a switching element (101) and a rectifying element (102) that is connected in series to the switching element (101). This electric power converter (100) has a configuration wherein an external electrical load (103) is connected to the connection point of the switching element (101) and the rectifying element (102). The switching element (101) is composed of an insulating gate type semiconductor element that has a first gate terminal (105) and a second gate terminal (106). The rectifying element (102) is composed of a diode that has a Schottky junction which uses silicon carbide as a semiconductor base. Different driving signals are applied to the first gate terminal (105) and the second gate terminal (106), respectively.

Abstract: A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.

Abstract: A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.

Abstract: A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.

Abstract: An electric power converter (100) which is provided with a switching element (101) and a rectifying element (102) that is connected in series to the switching element (101). This electric power converter (100) has a configuration wherein an external electrical load (103) is connected to the connection point of the switching element (101) and the rectifying element (102). The switching element (101) is composed of an insulating gate type semiconductor element that has a first gate terminal (105) and a second gate terminal (106). The rectifying element (102) is composed of a diode that has a Schottky junction which uses silicon carbide as a semiconductor base. Different driving signals are applied to the first gate terminal (105) and the second gate terminal (106), respectively.

Abstract: An apparatus is adapted to drive an insulating gate-type semiconductor element by a first control voltage and a second control voltage, that are supplied to a first insulating gate and a second insulating gate, respectively, and includes a first noise filter inputting a signal about current that passes through the insulating gate-type semiconductor element, a first comparator making a comparison between an output signal of the first noise filter and a first reference signal and outputting a first comparison result, a first control voltage output circuit, and a second control voltage output circuit, the second control voltage output circuit being adapted to reduce the second control voltage when it is determined from the first comparison result that overcurrent passes through the insulating gate-type semiconductor element, the first control voltage output circuit being adapted to reduce the first control voltage after the second control voltage is reduced.

Abstract: A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.

Abstract: An anode electrode and a cathode electrode formed on a silicon semiconductor substrate, p-type layer formed next to the anode electrode, an n-type layer formed next to the cathode electrode by a V-group element being diffused, an n? layer formed between the p-type layer and the n-type layer, and an n-buffer layer formed between the n? layer and the n-type layer and containing oxygen are provided and an oxygen concentration in an area of a width of at least 30 ?m from a surface on a side of the n-type layer of the cathode electrode toward the anode electrode is set to 1×1017 cm?3 or more and also the oxygen concentration of the n? layer in a position in contact with the p-type layer is set to less than 3×1017 cm?3.

Abstract: A rectifier including an autonomous type synchronous-rectification MOSFET is provided, which prevents chattering and through-current caused by a malfunction when a noise is applied. The rectifier includes: a rectification MOSFET for performing synchronous rectification; a determination circuit configured to input a voltage between a pair of main terminals of the rectification MOSFET, and to determine whether the rectification MOSFET is in on or off state on the basis of the inputted voltage; and a gate drive circuit configured such that a gate of the rectification MOSFET is turned on and off by a comparison signal from the determination circuit, and such that a time required to boost a gate voltage when the rectification MOSFET is turned on is longer than a time required to lower the gate voltage when the rectification MOSFET is turned off.

Abstract: An anode electrode and a cathode electrode formed on a silicon semiconductor substrate, p-type layer formed next to the anode electrode, an n-type layer formed next to the cathode electrode by a V-group element being diffused, an n? layer formed between the p-type layer and the n-type layer, and an n-buffer layer formed between the n? layer and the n-type layer and containing oxygen are provided and an oxygen concentration in an area of a width of at least 30 ?m from a surface on a side of the n-type layer of the cathode electrode toward the anode electrode is set to 1×1017 cm?3 or more and also the oxygen concentration of the n? layer in a position in contact with the p-type layer is set to less than 3×1017 cm?3.

Abstract: An apparatus is adapted to drive an insulating gate-type semiconductor element by a first control voltage and a second control voltage, that are supplied to a first insulating gate and a second insulating gate, respectively, and includes a first noise filter inputting a signal about current that passes through the insulating gate-type semiconductor element, a first comparator making a comparison between an output signal of the first noise filter and a first reference signal and outputting a first comparison result, a first control voltage output circuit, and a second control voltage output circuit, the second control voltage output circuit being adapted to reduce the second control voltage when it is determined from the first comparison result that overcurrent passes through the insulating gate-type semiconductor element, the first control voltage output circuit being adapted to reduce the first control voltage after the second control voltage is reduced.