Patents by Inventor Mutsuhiro Mori

Mutsuhiro Mori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10319849
    Abstract: The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.
    Type: Grant
    Filed: December 12, 2014
    Date of Patent: June 11, 2019
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Tetsuya Ishimaru, Mutsuhiro Mori, Junichi Sakano, Kohhei Onda
  • Patent number: 10224425
    Abstract: An electric power converter (100) which is provided with a switching element (101) and a rectifying element (102) that is connected in series to the switching element (101). This electric power converter (100) has a configuration wherein an external electrical load (103) is connected to the connection point of the switching element (101) and the rectifying element (102). The switching element (101) is composed of an insulating gate type semiconductor element that has a first gate terminal (105) and a second gate terminal (106). The rectifying element (102) is composed of a diode that has a Schottky junction which uses silicon carbide as a semiconductor base. Different driving signals are applied to the first gate terminal (105) and the second gate terminal (106), respectively.
    Type: Grant
    Filed: October 17, 2016
    Date of Patent: March 5, 2019
    Assignee: HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
    Inventors: Yujiro Takeuchi, Mutsuhiro Mori
  • Patent number: 10205314
    Abstract: A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: February 12, 2019
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Tetsuya Ishimaru, Mutsuhiro Mori, Shinichi Kurita
  • Publication number: 20190043984
    Abstract: A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.
    Type: Application
    Filed: August 6, 2018
    Publication date: February 7, 2019
    Applicant: HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
    Inventors: Masaki SHIRAISHI, Tetsuya ISHIMARU, Junichi SAKANO, Mutsuhiro MORI, Shinichi KURITA
  • Patent number: 10177069
    Abstract: A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.
    Type: Grant
    Filed: September 9, 2015
    Date of Patent: January 8, 2019
    Assignee: HITACHI LTD.
    Inventors: Takashi Naito, Motomune Kodama, Takuya Aoyagi, Shigeru Kikuchi, Takashi Nogawa, Mutsuhiro Mori, Eiichi Ide, Toshiaki Morita, Akitoyo Konno, Taigo Onodera, Tatsuya Miyake, Akihiro Miyauchi
  • Publication number: 20180301549
    Abstract: An electric power converter (100) which is provided with a switching element (101) and a rectifying element (102) that is connected in series to the switching element (101). This electric power converter (100) has a configuration wherein an external electrical load (103) is connected to the connection point of the switching element (101) and the rectifying element (102). The switching element (101) is composed of an insulating gate type semiconductor element that has a first gate terminal (105) and a second gate terminal (106). The rectifying element (102) is composed of a diode that has a Schottky junction which uses silicon carbide as a semiconductor base. Different driving signals are applied to the first gate terminal (105) and the second gate terminal (106), respectively.
    Type: Application
    Filed: October 17, 2016
    Publication date: October 18, 2018
    Inventors: Yujiro TAKEUCHI, Mutsuhiro MORI
  • Patent number: 10038380
    Abstract: An apparatus is adapted to drive an insulating gate-type semiconductor element by a first control voltage and a second control voltage, that are supplied to a first insulating gate and a second insulating gate, respectively, and includes a first noise filter inputting a signal about current that passes through the insulating gate-type semiconductor element, a first comparator making a comparison between an output signal of the first noise filter and a first reference signal and outputting a first comparison result, a first control voltage output circuit, and a second control voltage output circuit, the second control voltage output circuit being adapted to reduce the second control voltage when it is determined from the first comparison result that overcurrent passes through the insulating gate-type semiconductor element, the first control voltage output circuit being adapted to reduce the first control voltage after the second control voltage is reduced.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: July 31, 2018
    Assignee: HITACHI, LTD.
    Inventors: Takayuki Hashimoto, Mutsuhiro Mori
  • Publication number: 20180191152
    Abstract: A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.
    Type: Application
    Filed: November 21, 2017
    Publication date: July 5, 2018
    Inventors: Tetsuya Ishimaru, Mutsuhiro Mori, Shinichi Kurita
  • Patent number: 9991336
    Abstract: An anode electrode and a cathode electrode formed on a silicon semiconductor substrate, p-type layer formed next to the anode electrode, an n-type layer formed next to the cathode electrode by a V-group element being diffused, an n? layer formed between the p-type layer and the n-type layer, and an n-buffer layer formed between the n? layer and the n-type layer and containing oxygen are provided and an oxygen concentration in an area of a width of at least 30 ?m from a surface on a side of the n-type layer of the cathode electrode toward the anode electrode is set to 1×1017 cm?3 or more and also the oxygen concentration of the n? layer in a position in contact with the p-type layer is set to less than 3×1017 cm?3.
    Type: Grant
    Filed: September 5, 2017
    Date of Patent: June 5, 2018
    Assignee: Hitachi Power Semiconductor Device Ltd.
    Inventors: Masatoshi Wakagi, Taiga Arai, Mutsuhiro Mori, Tomoyasu Furukawa
  • Patent number: 9966871
    Abstract: A rectifier including an autonomous type synchronous-rectification MOSFET is provided, which prevents chattering and through-current caused by a malfunction when a noise is applied. The rectifier includes: a rectification MOSFET for performing synchronous rectification; a determination circuit configured to input a voltage between a pair of main terminals of the rectification MOSFET, and to determine whether the rectification MOSFET is in on or off state on the basis of the inputted voltage; and a gate drive circuit configured such that a gate of the rectification MOSFET is turned on and off by a comparison signal from the determination circuit, and such that a time required to boost a gate voltage when the rectification MOSFET is turned on is longer than a time required to lower the gate voltage when the rectification MOSFET is turned off.
    Type: Grant
    Filed: December 12, 2014
    Date of Patent: May 8, 2018
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Tetsuya Ishimaru, Kohhei Onda, Junichi Sakano, Mutsuhiro Mori
  • Publication number: 20180090564
    Abstract: An anode electrode and a cathode electrode formed on a silicon semiconductor substrate, p-type layer formed next to the anode electrode, an n-type layer formed next to the cathode electrode by a V-group element being diffused, an n? layer formed between the p-type layer and the n-type layer, and an n-buffer layer formed between the n? layer and the n-type layer and containing oxygen are provided and an oxygen concentration in an area of a width of at least 30 ?m from a surface on a side of the n-type layer of the cathode electrode toward the anode electrode is set to 1×1017 cm?3 or more and also the oxygen concentration of the n? layer in a position in contact with the p-type layer is set to less than 3×1017 cm?3.
    Type: Application
    Filed: September 5, 2017
    Publication date: March 29, 2018
    Applicant: HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
    Inventors: Masatoshi WAKAGI, Taiga ARAI, Mutsuhiro MORI, Tomoyasu FURUKAWA
  • Publication number: 20170373599
    Abstract: An apparatus is adapted to drive an insulating gate-type semiconductor element by a first control voltage and a second control voltage, that are supplied to a first insulating gate and a second insulating gate, respectively, and includes a first noise filter inputting a signal about current that passes through the insulating gate-type semiconductor element, a first comparator making a comparison between an output signal of the first noise filter and a first reference signal and outputting a first comparison result, a first control voltage output circuit, and a second control voltage output circuit, the second control voltage output circuit being adapted to reduce the second control voltage when it is determined from the first comparison result that overcurrent passes through the insulating gate-type semiconductor element, the first control voltage output circuit being adapted to reduce the first control voltage after the second control voltage is reduced.
    Type: Application
    Filed: September 8, 2017
    Publication date: December 28, 2017
    Inventors: Takayuki HASHIMOTO, Mutsuhiro MORI
  • Patent number: 9831145
    Abstract: Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected.
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: November 28, 2017
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Tetsuya Ishimaru, Mutsuhiro Mori, Shinichi Kurita, Shigeru Sugayama, Junichi Sakano, Kohhei Onda
  • Publication number: 20170317075
    Abstract: A diode includes an anode electrode layer; a cathode electrode layer; a buffer layer of a first conductivity type formed between the anode electrode layer and the cathode electrode layer in a region extending to a location at a distance of 30 ?m or more from the cathode electrode layer; a first semiconductor layer of the first conductivity type formed in a region between the anode electrode layer and the cathode electrode layer, and being in contact with the buffer layer of the first conductivity type; and a second semiconductor layer of a second conductivity type formed in a region between the anode electrode layer and the first semiconductor layer of the first conductivity type. The carrier concentration in the first semiconductor layer is lower than the carrier concentration in the buffer layer. The carrier concentration in the buffer layer is less than 1×1015 cm?3.
    Type: Application
    Filed: April 24, 2017
    Publication date: November 2, 2017
    Inventors: Taiga ARAI, Masatoshi WAKAGI, Tetsuya ISHIMARU, Mutsuhiro MORI
  • Patent number: 9780660
    Abstract: An apparatus is adapted to drive an insulating gate-type semiconductor element by a first control voltage and a second control voltage, that are supplied to a first insulating gate and a second insulating gate, respectively, and includes a first noise filter inputting a signal about current that passes through the insulating gate-type semiconductor element, a first comparator making a comparison between an output signal of the first noise filter and a first reference signal and outputting a first comparison result, a first control voltage output circuit, and a second control voltage output circuit, the second control voltage output circuit being adapted to reduce the second control voltage when it is determined from the first comparison result that overcurrent passes through the insulating gate-type semiconductor element, the first control voltage output circuit being adapted to reduce the first control voltage after the second control voltage is reduced.
    Type: Grant
    Filed: May 10, 2013
    Date of Patent: October 3, 2017
    Assignee: Hitachi, Ltd.
    Inventors: Takayuki Hashimoto, Mutsuhiro Mori
  • Publication number: 20170263516
    Abstract: Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected.
    Type: Application
    Filed: August 19, 2015
    Publication date: September 14, 2017
    Inventors: Tetsuya ISHIMARU, Mutsuhiro MORI, Shinichi KURITA, Shigeru SUGAYAMA, Junichi SAKANO, Kohhei ONDA
  • Publication number: 20170236768
    Abstract: A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.
    Type: Application
    Filed: September 9, 2015
    Publication date: August 17, 2017
    Applicant: HITACHI, LTD.
    Inventors: Takashi NAITO, Motomune KODAMA, Takuya AOYAGI, Shigeru KIKUCHI, Takashi NOGAWA, Mutsuhiro MORI, Eiichi IDE, Toshiaki MORITA, Akitoyo KONNO, Taigo ONODERA, Tatsuya MIYAKE, Akihiko MIYAUCHI
  • Publication number: 20170141677
    Abstract: The present invention provides a switching device (100) for power conversion in which a first gate electrode (6), a p-type channel layer (2) having an n-type emitter region (3), a second gate electrode (13), and a p-type floating layer (15) are repeatedly arranged in order on the surface side of an n?type semiconductor substrate (1). An interval a between the two gates (6, 13) that sandwich the p-type channel layer (2) is configured to be smaller than an interval b between the two gates (13, 6) that sandwich the p-type floating layer (15). The first gate electrode (6) and the second gate electrode (13) are both supplied with drive signals having a time difference in drive timing.
    Type: Application
    Filed: January 31, 2017
    Publication date: May 18, 2017
    Inventors: Takayuki HASHIMOTO, Mutsuhiro MORI, Masahiro MASUNAGA
  • Patent number: 9654027
    Abstract: A semiconductor device is provided that can prevent a current from being concentrated into a specific chip, and can reduce loss as well as noise. The semiconductor device according to the present invention includes: a switching element; a main diode that is connected in parallel to the switching element; and an auxiliary diode that is connected in parallel to the switching element and has a different structure from that of the main diode, wherein in a conductive state a current flowing through the auxiliary diode is smaller than that through the main diode, and in a transition period from the conductive state to a non-conductive state a current flowing through the auxiliary diode is larger than that through the main diode.
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: May 16, 2017
    Assignee: Hitachi, Ltd.
    Inventors: Takashi Hirao, Mutsuhiro Mori
  • Patent number: 9595602
    Abstract: The present invention provides a switching device (100) for power conversion in which a first gate electrode (6), a p-type channel layer (2) having an n-type emitter region (3), a second gate electrode (13), and a p-type floating layer (15) are repeatedly arranged in order on the surface side of an n-type semiconductor substrate (1). An interval a between the two gates (6, 13) that sandwich the p-type channel layer (2) is configured to be smaller than an interval b between the two gates (13, 6) that sandwich the p-type floating layer (15). The first gate electrode (6) and the second gate electrode (13) are both supplied with drive signals having a time difference in drive timing.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: March 14, 2017
    Assignee: Hitachi, Ltd.
    Inventors: Takayuki Hashimoto, Mutsuhiro Mori, Masahiro Masunaga