Abstract: A diode includes an anode electrode layer; a cathode electrode layer; a buffer layer of a first conductivity type formed between the anode electrode layer and the cathode electrode layer in a region extending to a location at a distance of 30 ?m or more from the cathode electrode layer; a first semiconductor layer of the first conductivity type formed in a region between the anode electrode layer and the cathode electrode layer, and being in contact with the buffer layer of the first conductivity type; and a second semiconductor layer of a second conductivity type formed in a region between the anode electrode layer and the first semiconductor layer of the first conductivity type. The carrier concentration in the first semiconductor layer is lower than the carrier concentration in the buffer layer. The carrier concentration in the buffer layer is less than 1×1015 cm?3.

Abstract: An apparatus is adapted to drive an insulating gate-type semiconductor element by a first control voltage and a second control voltage, that are supplied to a first insulating gate and a second insulating gate, respectively, and includes a first noise filter inputting a signal about current that passes through the insulating gate-type semiconductor element, a first comparator making a comparison between an output signal of the first noise filter and a first reference signal and outputting a first comparison result, a first control voltage output circuit, and a second control voltage output circuit, the second control voltage output circuit being adapted to reduce the second control voltage when it is determined from the first comparison result that overcurrent passes through the insulating gate-type semiconductor element, the first control voltage output circuit being adapted to reduce the first control voltage after the second control voltage is reduced.

Abstract: Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected.

Abstract: A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.

Abstract: The present invention provides a switching device (100) for power conversion in which a first gate electrode (6), a p-type channel layer (2) having an n-type emitter region (3), a second gate electrode (13), and a p-type floating layer (15) are repeatedly arranged in order on the surface side of an n?type semiconductor substrate (1). An interval a between the two gates (6, 13) that sandwich the p-type channel layer (2) is configured to be smaller than an interval b between the two gates (13, 6) that sandwich the p-type floating layer (15). The first gate electrode (6) and the second gate electrode (13) are both supplied with drive signals having a time difference in drive timing.

Abstract: A semiconductor device is provided that can prevent a current from being concentrated into a specific chip, and can reduce loss as well as noise. The semiconductor device according to the present invention includes: a switching element; a main diode that is connected in parallel to the switching element; and an auxiliary diode that is connected in parallel to the switching element and has a different structure from that of the main diode, wherein in a conductive state a current flowing through the auxiliary diode is smaller than that through the main diode, and in a transition period from the conductive state to a non-conductive state a current flowing through the auxiliary diode is larger than that through the main diode.

Abstract: The present invention provides a switching device (100) for power conversion in which a first gate electrode (6), a p-type channel layer (2) having an n-type emitter region (3), a second gate electrode (13), and a p-type floating layer (15) are repeatedly arranged in order on the surface side of an n-type semiconductor substrate (1). An interval a between the two gates (6, 13) that sandwich the p-type channel layer (2) is configured to be smaller than an interval b between the two gates (13, 6) that sandwich the p-type floating layer (15). The first gate electrode (6) and the second gate electrode (13) are both supplied with drive signals having a time difference in drive timing.

Abstract: A rectifier including an autonomous type synchronous-rectification MOSFET is provided, which prevents chattering and through-current caused by a malfunction when a noise is applied. The rectifier includes: a rectification MOSFET for performing synchronous rectification; a determination circuit configured to input a voltage between a pair of main terminals of the rectification MOSFET, and to determine whether the rectification MOSFET is in on or off state on the basis of the inputted voltage; and a gate drive circuit configured such that a gate of the rectification MOSFET is turned on and off by a comparison signal from the determination circuit, and such that a time required to boost a gate voltage when the rectification MOSFET is turned on is longer than a time required to lower the gate voltage when the rectification MOSFET is turned off.

Abstract: The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.

Abstract: A semiconductor device of this invention (an IGBT with a built-in diode) includes: an n?-type drift layer 1; a p-type channel region 2 that is arranged in contact with the surface side of this n?-type drift layer 1; a gate electrode 5 that is provided in a trench T provided so as to penetrate this p-type channel region 2 and reach to the n?-type drift layer 1 through a gate insulating film 3; an n-type source region 4 that is provided so as to contact the trench T on the surface side of the p-type channel region 2; a high-concentration n-type region 6 that is arranged in contact with the back side of the n?-type drift layer 1; and a high-concentration p-type region 7 that is arranged in contact with the back side of this high-concentration n-type region 6; in which a junction of the high-concentration n-type region 6 and the high-concentration p-type region 7 is a tunnel junction. According to this semiconductor device, it is possible to form the IGBT and the diode on a single chip.

Abstract: An apparatus is adapted to drive an insulating gate-type semiconductor element by a first control voltage and a second control voltage, that are supplied to a first insulating gate and a second insulating gate, respectively, and includes a first noise filter inputting a signal about current that passes through the insulating gate-type semiconductor element, a first comparator making a comparison between an output signal of the first noise filter and a first reference signal and outputting a first comparison result, a first control voltage output circuit, and a second control voltage output circuit, the second control voltage output circuit being adapted to reduce the second control voltage when it is determined from the first comparison result that overcurrent passes through the insulating gate-type semiconductor element, the first control voltage output circuit being adapted to reduce the first control voltage after the second control voltage is reduced.

Abstract: There is provided a semiconductor device including a first emitter layer of a first conductivity type, a drift layer of a second conductivity type, adjacent to the first emitter layer, a channel layer of the first conductivity type, adjacent to the drift layer, a second emitter layer of the second conductivity type, adjacent to the channel layer, a collector electrode electrically coupled to the first emitter layer, an emitter electrode electrically coupled to the second emitter layer, a first trench-gate electrode for controlling on and off of an electric current flowing between the collector electrode and the emitter electrode, and a second trench-gate electrode for controlling a turn-off power loss. The semiconductor device further includes a thyristor unit made up of the first emitter layer, the drift layer, the channel layer, and the second emitter layer.

Abstract: A semiconductor device according to the present invention includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type adjacent to the first semiconductor layer and having an impurity concentration lower than the first semiconductor layer; a third semiconductor layer of a second conductivity type adjacent to the second semiconductor layer; a fourth semiconductor layer of the first conductivity type located within the third semiconductor layer; a first electrode coupled to the third semiconductor layer and the fourth semiconductor layer; a second electrode coupled to the first semiconductor layer; and an insulated gate provided over the respective surfaces of the third semiconductor layer and the fourth semiconductor layer, wherein peak value of the impurity concentration of the third semiconductor layer is in the range of 2×1016 cm?3 or more and 5×1018 cm?3 or less.

Abstract: A semiconductor device according to the present invention includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type, which is adjacent to the first semiconductor layer and has an impurity concentration lower than the first semiconductor layer; a third semiconductor layer adjacent to the second semiconductor layer; a first electrode electrically coupled to the third semiconductor layer; a second electrode electrically coupled to the first semiconductor layer; and an insulated gate provided over the surface of the third semiconductor layer. Then, an end portion of the insulated gate is located at a position distant from the junction part between the second semiconductor layer and the third semiconductor layer within the surface of the third semiconductor layer.

Abstract: A semiconductor device is provided that can prevent a current from being concentrated into a specific chip, and can reduce loss as well as noise. The semiconductor device according to the present invention includes: a switching element; a main diode that is connected in parallel to the switching element; and an auxiliary diode that is connected in parallel to the switching element and has a different structure from that of the main diode, wherein in a conductive state a current flowing through the auxiliary diode is smaller than that through the main diode, and in a transition period from the conductive state to a non-conductive state a current flowing through the auxiliary diode is larger than that through the main diode.

Abstract: Bondability and heat conductivity of a bonded body in which some of metal, ceramic, or semiconductor are bonded to each other are improved. In the bonded body in which a first member and a second member each comprise one of metal, ceramic, or semiconductor are bonded to each other, the second member is bonded to the first member by way of an adhesive member disposed to the surface of the first member, and the adhesive member contains a V2O5-containing glass and metal particles.

Abstract: The present invention provides a switching device (100) for power conversion in which a first gate electrode (6), a p-type channel layer (2) having an n-type emitter region (3), a second gate electrode (13), and a p-type floating layer (15) are repeatedly arranged in order on the surface side of an n-type semiconductor substrate (1). An interval a between the two gates (6, 13) that sandwich the p-type channel layer (2) is configured to be smaller than an interval b between the two gates (13, 6) that sandwich the p-type floating layer (15). The first gate electrode (6) and the second gate electrode (13) are both supplied with drive signals having a time difference in drive timing.

Abstract: It is an object of the present invention to provide a diode that can be produced with a simple method and performs a favorable recovery operation. The diode in accordance with the present invention includes a layer with a high concentration of dopants and a layer with a low concentration of dopants, and the layer with a low concentration of dopants further includes a layer with a different activation rate from other potions (see FIG. 1).

Abstract: There is provided a semiconductor device including a first emitter layer of a first conductivity type, a drift layer of a second conductivity type, adjacent to the first emitter layer, a channel layer of the first conductivity type, adjacent to the drift layer, a second emitter layer of the second conductivity type, adjacent to the channel layer, a collector electrode electrically coupled to the first emitter layer, an emitter electrode electrically coupled to the second emitter layer, a first trench-gate electrode for controlling on and off of an electric current flowing between the collector electrode and the emitter electrode, and a second trench-gate electrode for controlling a turn-off power loss. The semiconductor device further includes a thyristor unit made up of the first emitter layer, the drift layer, the channel layer, and the second emitter layer.

Abstract: A semiconductor device includes first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type that is formed near a surface of the first semiconductor layer; a first main electrode that is electrically connected to the second semiconductor layer; a third semiconductor layer of the second conductivity type that neighbors the first semiconductor layer; a fourth semiconductor layer of the first conductivity type that is selectively disposed in an upper portion of the third semiconductor layer; a second main electrode that is electrically connected to the third semiconductor layer and the fourth semiconductor layer; a trench whose side face is in contact with the third semiconductor layer and the fourth semiconductor layer; a gate electrode that is formed along the side face of the trench by a sidewall of polysilicon; and a polysilicon electrode.