Patents by Inventor Mutsumi Kitamura
Mutsumi Kitamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210359088Abstract: Provided is a semiconductor device, including: a drift region of a first conductivity type which is provided in a semiconductor substrate, and a buffer region of the first conductivity type which is provided between the drift region and a lower surface of the semiconductor substrate, and has three or more concentration peaks higher than a doping concentration of the drift region of the semiconductor substrate in a depth direction. Three or more of the concentration peaks includes a shallowest peak closest to the lower surface of the semiconductor substrate, a high concentration peak arranged at an upper side than the lower surface of the semiconductor substrate than the shallowest peak, and one or more low concentration peaks arranged at an upper side than the lower surface of the semiconductor substrate than the high concentration peak and of which the doping concentration is ? or less of the high concentration peak.Type: ApplicationFiled: July 27, 2021Publication date: November 18, 2021Inventors: Kota OHI, Yoshihiro IKURA, Yosuke SAKURAI, Mutsumi KITAMURA, Yuichi ONOZAWA, Yoshiharu KATO, Toru AJIKI
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Patent number: 10483357Abstract: A semiconductor device including: a semiconductor substrate having a drift region of the first conductivity type; a cathode region formed on the lower surface of the semiconductor substrate; a diode portion having the cathode region formed on the lower surface of the semiconductor substrate; the first dummy trench portion provided from the upper surface of the semiconductor substrate to the drift region, including one part provided inside the diode portion and the other part provided outside the diode portion, and provided extending in series from inside the diode portion to outside the diode portion in a predetermined extending direction on the upper surface of the semiconductor substrate; and the first lead-out portion that is provided on the upper surface of the semiconductor substrate, and electrically connected to the first dummy trench portion outside the diode portion is provided.Type: GrantFiled: September 20, 2018Date of Patent: November 19, 2019Assignee: FUJI ELECTRIC CO., LTD.Inventors: Mutsumi Kitamura, Tohru Shirakawa
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Patent number: 10468510Abstract: A semiconductor device includes: a drift layer of a first conductivity type, implementing a main semiconductor layer; a base region of a second conductivity type provided on an top surface side of the drift layer; a first main electrode region of the first conductivity type provided in an upper part of the base region, having an impurity concentration higher than the main semiconductor layer; a gate electrode buried in a trench penetrating the first main electrode region and the base region through a gate insulating film; a gate screening semiconductor layer of the second conductivity type, being buried under a bottom of the trench; an intermediate semiconductor layer of the first conductivity type sandwiched between the base region and the gate screening semiconductor layer; and a second main electrode region of the second conductivity type provided on a bottom surface side of the drift layer.Type: GrantFiled: July 11, 2016Date of Patent: November 5, 2019Assignee: FUJI ELECTRIC CO., LTD.Inventor: Mutsumi Kitamura
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Publication number: 20190140058Abstract: A semiconductor device including: a semiconductor substrate having a drift region of the first conductivity type; a cathode region formed on the lower surface of the semiconductor substrate; a diode portion having the cathode region formed on the lower surface of the semiconductor substrate; the first dummy trench portion provided from the upper surface of the semiconductor substrate to the drift region, including one part provided inside the diode portion and the other part provided outside the diode portion, and provided extending in series from inside the diode portion to outside the diode portion in a predetermined extending direction on the upper surface of the semiconductor substrate; and the first lead-out portion that is provided on the upper surface of the semiconductor substrate, and electrically connected to the first dummy trench portion outside the diode portion is provided.Type: ApplicationFiled: September 20, 2018Publication date: May 9, 2019Inventors: Mutsumi KITAMURA, Tohru SHIRAKAWA
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Patent number: 10199458Abstract: Provided is a semiconductor device having a superjunction structure formed by a first conduction type column and a second conduction type column, including a first region of the superjunction structure in which a PN ratio increases in a direction from a first surface side to a second surface side of the superjunction structure; and a second region of the superjunction structure that contacts the first region and is adjacent to a channel region of the semiconductor device, wherein a PN ratio of the second region is less than the PN ratio at an end of the first region on the second surface side and thickness of the second region is less than thickness of the first region.Type: GrantFiled: December 3, 2015Date of Patent: February 5, 2019Assignee: FUJI ELECTRIC CO., LTD.Inventors: Toshiaki Sakata, Mutsumi Kitamura
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Publication number: 20170018637Abstract: A semiconductor device includes: a drift layer of a first conductivity type, implementing a main semiconductor layer; a base region of a second conductivity type provided on an top surface side of the drift layer; a first main electrode region of the first conductivity type provided in an upper part of the base region, having an impurity concentration higher than the main semiconductor layer; a gate electrode buried in a trench penetrating the first main electrode region and the base region through a gate insulating film; a gate screening semiconductor layer of the second conductivity type, being buried under a bottom of the trench; an intermediate semiconductor layer of the first conductivity type sandwiched between the base region and the gate screening semiconductor layer; and a second main electrode region of the second conductivity type provided on a bottom surface side of the drift layer.Type: ApplicationFiled: July 11, 2016Publication date: January 19, 2017Applicant: FUJI ELECTRIC CO., LTD.Inventor: Mutsumi KITAMURA
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Publication number: 20160225847Abstract: Provided is a semiconductor device having a superjunction structure formed by a first conduction type column and a second conduction type column, including a first region of the superjunction structure in which a PN ratio increases in a direction from a first surface side to a second surface side of the superjunction structure; and a second region of the superjunction structure that contacts the first region and is adjacent to a channel region of the semiconductor device, wherein a PN ratio of the second region is less than the PN ratio at an end of the first region on the second surface side and thickness of the second region is less than thickness of the first region.Type: ApplicationFiled: December 3, 2015Publication date: August 4, 2016Inventors: Toshiaki SAKATA, Mutsumi KITAMURA
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Patent number: 9123561Abstract: A superjunction semiconductor device is disclosed in which the trade-off relationship between breakdown voltage characteristics and voltage drop characteristics is considerably improved, and it is possible to greatly improve the charge resistance of an element peripheral portion and long-term breakdown voltage reliability. It includes parallel pn layers of n-type drift regions and p-type partition regions in superjunction structure. PN layers are depleted when off-state voltage is applied. Repeating pitch of the second parallel pn layer in a ring-like element peripheral portion encircling the element active portion is smaller than repeating pitch of the first parallel pn layer in the element active portion. Element peripheral portion includes low concentration n-type region on the surface of the second parallel pn layer. The depth of p-type partition region of an outer peripheral portion in the element peripheral portion is smaller than the depth of p-type partition region of an inner peripheral portion.Type: GrantFiled: October 22, 2012Date of Patent: September 1, 2015Assignee: FUJI ELECTRIC CO., LTD.Inventors: Takahiro Tamura, Yasuhiko Onishi, Mutsumi Kitamura
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Patent number: 9087893Abstract: A parallel p-n layer (20) is provided as a drift layer between an active portion and an n+ drain region (11). The parallel p-n layer (20) is formed by an n-type region (1) and a p-type region (2) being repeatedly alternately joined. An n-type high concentration region (21) is provided on a first main surface side of the n-type region (1). The n-type high concentration region (21) has an impurity concentration higher than that of an n-type low concentration region (22) provided on a second main surface side of the n-type region (1). The n-type high concentration region (21) has an impurity concentration 1.2 times or more, 3 times or less, preferably 1.5 times or more, 2.5 times or less, greater than that of the n-type low concentration region (22). Also, the n-type high concentration region (21) has one-third or less, preferably one-eighth or more, one-fourth or less, of the thickness of a region of the n-type region (1) adjacent to the p-type region (2).Type: GrantFiled: January 28, 2011Date of Patent: July 21, 2015Assignee: FUJI ELECTRIC CO., LTD.Inventors: Yasuhiko Onishi, Mutsumi Kitamura, Akio Sugi, Manabu Takei
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Patent number: 9035376Abstract: A semiconductor device and method of manufacturing the semiconductor device is disclosed in which the tradeoff relationship between the Eoff and the turning OFF dV/dt is improved at a low cost using a trench embedding method. The method comprises a step of forming a parallel pn layer that is a superjunction structure using a trench embedding method and a step of ion implantation into an upper part of an n type semiconductor layer, i.e., an n type column, forming a high concentration n type semiconductor region. This method improves the trade-off relationship between the Eoff and the turning OFF dV/dt as compared with a high concentration n type semiconductor region formed of an epitaxial layer. This method achieves shorter process time and lower cost in manufacturing because it eliminates the redundant repeating of steps performed in the conventional method of forming a superjunction structure through multi-stage epitaxial growth.Type: GrantFiled: February 6, 2014Date of Patent: May 19, 2015Assignee: FUJI ELECTRIC CO., LTD.Inventors: Mutsumi Kitamura, Michiya Yamada, Tatsuhiko Fujihira
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Publication number: 20140225217Abstract: A semiconductor device and method of manufacturing the semiconductor device is disclosed in which the tradeoff relationship between the Eoff and the turning OFF dV/dt is improved at a low cost using a trench embedding method. The method comprises a step of forming a parallel pn layer that is a superjunction structure using a trench embedding method and a step of ion implantation into an upper part of an n type semiconductor layer, i.e., an n type column, forming a high concentration n type semiconductor region. This method improves the trade-off relationship between the Eoff and the turning OFF dV/dt as compared with a high concentration n type semiconductor region formed of an epitaxial layer. This method achieves shorter process time and lower cost in manufacturing because it eliminates the redundant repeating of steps performed in the conventional method of forming a superjunction structure through multi-stage epitaxial growth.Type: ApplicationFiled: February 6, 2014Publication date: August 14, 2014Applicant: FUJI ELECTRIC CO., LTD.Inventors: Mutsumi KITAMURA, Michiya YAMADA, Tatsuhiko FUJIHIRA
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Patent number: 8748982Abstract: Semiconductor regions are alternately arranged in a parallel pn layer in which an n-type region and a p-type region are alternately arranged parallel to the main surface of a semiconductor substrate. Pitch between n drift region and p partition region of a second parallel pn layer in an edge termination region is two thirds of pitch between n drift region and p partition region of a first parallel pn layer in an active region. At boundaries between main SJ cells and fine SJ cells at four corners of the semiconductor substrate having rectangular shape in plan view, ends of two pitches of main SJ cells face the ends of three pitches of fine SJ cells. In this way, it is possible to reduce the influence of a process variation and thus reduce mutual diffusion between n drift region and p partition region of the fine SJ cell.Type: GrantFiled: October 15, 2013Date of Patent: June 10, 2014Assignee: Fuji Electric Co., Ltd.Inventors: Dawei Cao, Mutsumi Kitamura, Takahiro Tamura, Yasuhiko Onishi
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Publication number: 20140035002Abstract: Semiconductor regions are alternately arranged in a parallel pn layer in which an n-type region and a p-type region are alternately arranged parallel to the main surface of a semiconductor substrate. Pitch between n drift region and p partition region of a second parallel pn layer in an edge termination region is two thirds of pitch between n drift region and p partition region of a first parallel pn layer in an active region. At boundaries between main SJ cells and fine SJ cells at four corners of the semiconductor substrate having rectangular shape in plan view, ends of two pitches of main SJ cells face the ends of three pitches of fine SJ cells. In this way, it is possible to reduce the influence of a process variation and thus reduce mutual diffusion between n drift region and p partition region of the fine SJ cell.Type: ApplicationFiled: October 15, 2013Publication date: February 6, 2014Applicant: FUJI ELECTRIC CO., LTD.Inventors: Dawei CAO, Mutsumi KITAMURA, Takahiro TAMURA, Yasuhiko ONISHI
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Patent number: 8378418Abstract: A bidirectional Trench Lateral Power MOSFET (TLPM) can achieve a high breakdown voltage and a low on-resistance. A plurality of straight-shaped islands having circular portions at both ends are surrounded by a trench arrangement. The islands provide first n source regions and a second n source region is formed on the outside of the islands. With such a pattern, the breakdown voltage in the case where the first n source regions are at a high potential can be higher than the breakdown voltage in the case where the second n source region is at a high potential. Alternatively, in the case of not changing the breakdown voltage, the on-resistance can be reduced.Type: GrantFiled: August 26, 2010Date of Patent: February 19, 2013Assignee: Fuji Electric Co., Ltd.Inventors: Mutsumi Kitamura, Akio Sugi, Naoto Fujishima, Shinichiro Matsunaga
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Publication number: 20130026560Abstract: A parallel p-n layer (20) is provided as a drift layer between an active portion and an n+ drain region (11). The parallel p-n layer (20) is formed by an n-type region (1) and a p-type region (2) being repeatedly alternately joined. An n-type high concentration region (21) is provided on a first main surface side of the n-type region (1). The n-type high concentration region (21) has an impurity concentration higher than that of an n-type low concentration region (22) provided on a second main surface side of the n-type region (1). The n-type high concentration region (21) has an impurity concentration 1.2 times or more, 3 times or less, preferably 1.5 times or more, 2.5 times or less, greater than that of the n-type low concentration region (22). Also, the n-type high concentration region (21) has one-third or less, preferably one-eighth or more, one-fourth or less, of the thickness of a region of the n-type region (1) adjacent to the p-type region (2).Type: ApplicationFiled: January 28, 2011Publication date: January 31, 2013Applicant: FUJI ELECTRIC CO., LTD.Inventors: Yasuhiko Onishi, Mutsumi Kitamura, Akio Sugi, Manabu Takei
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Patent number: 8084812Abstract: A semiconductor device and a method of fabrication thereof includes a bidirectional device having a high breakdown voltage and a decreased ON voltage. An n-type extended drain region is formed in the bottom surface of each trench. A p-type offset region is formed in each split semiconductor region. First and second n-source regions are formed in the surface of the p-type offset region. This reduces the in-plane distance between the first and second n-source regions to thereby increase the density of cells. The breakdown voltage is maintained along the trenches. This increases the resistance to high voltages. Channels are formed in the sidewalls of the trenches by making the voltage across each gate electrode higher than the voltage across each of the first and second n-source electrodes. Thus, a bidirectional LMOSFET through which current flows in both directions is achieved. The LMOSFET has a high breakdown voltage and a decreased ON voltage.Type: GrantFiled: November 4, 2009Date of Patent: December 27, 2011Assignee: Fuji Electric Co., Ltd.Inventors: Mutsumi Kitamura, Naoto Fujishima
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Patent number: 7902596Abstract: A semiconductor device and a method of fabrication thereof includes a bidirectional device having a high breakdown voltage and a decreased ON voltage. An n-type extended drain region is formed in the bottom surface of each trench. A p-type offset region is formed in each split semiconductor region. First and second n-source regions are formed in the surface of the p-type offset region. This reduces the in-plane distance between the first and second n-source regions to thereby increase the density of cells. The breakdown voltage is maintained along the trenches. This increases the resistance to high voltages. Channels are formed in the sidewalls of the trenches by making the voltage across each gate electrode higher than the voltage across each of the first and second n-source electrodes. Thus, a bidirectional LMOSFET through which current flows in both directions is achieved. The LMOSFET has a high breakdown voltage and a decreased ON voltage.Type: GrantFiled: August 16, 2004Date of Patent: March 8, 2011Assignee: Fuji Electric Systems Co., Ltd.Inventors: Mutsumi Kitamura, Naoto Fujishima
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Publication number: 20100330398Abstract: A bidirectional Trench Lateral Power MOSFET (TLPM) can achieve a high breakdown voltage and a low on-resistance. A plurality of straight-shaped islands having circular portions at both ends are surrounded by a trench arrangement. The islands provide first n source regions and a second n source region is formed on the outside of the islands. With such a pattern, the breakdown voltage in the case where the first n source regions are at a high potential can be higher than the breakdown voltage in the case where the second n source region is at a high potential. Alternatively, in the case of not changing the breakdown voltage, the on-resistance can be reduced.Type: ApplicationFiled: August 26, 2010Publication date: December 30, 2010Applicant: Fuji Electric Systems Co., Ltd.Inventors: Mutsumi Kitamura, Akio Sugi, Naoto Fujishima, Shinichiro Matsunaga
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Patent number: 7800167Abstract: A bidirectional Trench Lateral Power MOSFET (TLPM) can achieve a high breakdown voltage and a low on-resistance. A plurality of straight-shaped islands having circular portions at both ends are surrounded by a trench arrangement. The islands provide first n source regions and a second n source region is formed on the outside of the islands. With such a pattern, the breakdown voltage in the case where the first n source regions are at a high potential can be higher than the breakdown voltage in the case where the second n source region is at a high potential. Alternatively, in the case of not changing the breakdown voltage, the on-resistance can be reduced.Type: GrantFiled: May 25, 2007Date of Patent: September 21, 2010Assignee: Fuji Electric Systems Co., Ltd.Inventors: Mutsumi Kitamura, Akio Sugi, Naoto Fujishima, Shinichiro Matsunaga
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Publication number: 20100044749Abstract: A semiconductor device and a method of fabrication thereof includes a bidirectional device having a high breakdown voltage and a decreased ON voltage. An n-type extended drain region is formed in the bottom surface of each trench. A p-type offset region is formed in each split semiconductor region. First and second n-source regions are formed in the surface of the p-type offset region. This reduces the in-plane distance between the first and second n-source regions to thereby increase the density of cells. The breakdown voltage is maintained along the trenches. This increases the resistance to high voltages. Channels are formed in the sidewalls of the trenches by making the voltage across each gate electrode higher than the voltage across each of the first and second n-source electrodes. Thus, a bidirectional LMOSFET through which current flows in both directions is achieved. The LMOSFET has a high breakdown voltage and a decreased ON voltage.Type: ApplicationFiled: November 4, 2009Publication date: February 25, 2010Applicant: FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD.Inventors: Mutsumi KITAMURA, Naoto FUJISHIMA