Patents by Inventor Mutsuo Nakashima

Mutsuo Nakashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8198016
    Abstract: The present invention provides a patterning process, in which a resistance with regard to an organic solvent used for a composition for formation of a reverse film is rendered to a positive pattern to the degree of necessity and yet solubility into an alkaline etching liquid is secured, thereby enabling to finally obtain a negative image by a positive-negative reversal by performing a wet etching using an alkaline etching liquid. A resist patterning process of the present invention using a positive-negative reversal comprises at least a step of forming a resist film by applying a positive resist composition; a step of obtaining a positive pattern by exposing and developing the resist film; a step of crosslinking the positive resist pattern thus obtained; a step of forming a reverse film; and a step of reversing the positive pattern to a negative pattern by dissolving into an alkaline wet-etching liquid for removal.
    Type: Grant
    Filed: May 4, 2009
    Date of Patent: June 12, 2012
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Tsutomu Ogihara, Mutsuo Nakashima, Kazuhiro Katayama
  • Patent number: 8153836
    Abstract: In a mixture of silsesquioxane compounds comprising silsesquioxane units having a side chain including a direct bond between a silicon atom and a norbornane skeleton and having a degree of condensation of substantially 100%, a dimethylene chain of the norbornane skeleton remote from the silicon bonded side is substituted with at least one substituent group other than hydrogen, and an isomer having a bulkier substituent group on the dimethylene chain at an exo position is present in a higher proportion.
    Type: Grant
    Filed: September 25, 2007
    Date of Patent: April 10, 2012
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Mutsuo Nakashima, Yoshitaka Hamada, Katsuya Takemura, Kazumi Noda
  • Patent number: 8129100
    Abstract: Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer.
    Type: Grant
    Filed: April 3, 2009
    Date of Patent: March 6, 2012
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Katsuya Takemura, Jun Hatakeyama, Kazumi Noda, Mutsuo Nakashima, Masaki Ohashi, Toshinobu Ishihara
  • Patent number: 8026038
    Abstract: A metal oxide-containing film is formed from a heat curable composition comprising (A) a metal oxide-containing compound obtained through hydrolytic condensation between a hydrolyzable silicon compound and a hydrolyzable metal compound, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Cs, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The metal oxide-containing film ensures effective pattern formation.
    Type: Grant
    Filed: November 20, 2008
    Date of Patent: September 27, 2011
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Takafumi Ueda, Toshiharu Yano, Mutsuo Nakashima
  • Patent number: 7745094
    Abstract: A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a fluorinated norbornane group, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.
    Type: Grant
    Filed: February 6, 2007
    Date of Patent: June 29, 2010
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Mutsuo Nakashima, Yoshitaka Hamada, Katsuya Takemura, Kazumi Noda
  • Patent number: 7651829
    Abstract: Provided is a positive resist material, particularly a chemically amplified positive resist material having higher sensitivity, higher resolution, a higher exposure latitude and better process adaptability than conventional positive resist materials, and providing a good pattern profile after exposure, particularly having lessened line edge roughness and exhibiting excellent etching resistance. These materials may contain, preferably an organic solvent and acid generator, more preferably a dissolution inhibitor or a basic compound and/or a surfactant. Provided is a positive resist material comprising a polymer comprising at least one monomer unit selected from a group consisting of a monomer unit (A), a monomer unit (B) and a monomer unit (C) represented by the following formula (1); and having a glass transition temperature (Tg) of 100° C. or greater.
    Type: Grant
    Filed: May 26, 2004
    Date of Patent: January 26, 2010
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yoshitaka Hamada, Fujio Yagihashi, Mutsuo Nakashima, Kazumi Noda, Katsuya Takemura
  • Patent number: 7638256
    Abstract: Silicon compounds having fluorinated hemiacetal structure are provided. Silicone resins having the same structure have an appropriate acidity to enable formation of a finer pattern by minimizing the pattern collapse by swelling, exhibit improved resistance to the etching used in the pattern transfer to an organic film, and are thus suited for use in resist compositions for the bilayer process.
    Type: Grant
    Filed: July 6, 2006
    Date of Patent: December 29, 2009
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takeshi Kinsho, Takeru Watanabe, Mutsuo Nakashima, Yoshitaka Hamada
  • Publication number: 20090286188
    Abstract: The present invention provides a patterning process, in which a resistance with regard to an organic solvent used for a composition for formation of a reverse film is rendered to a positive pattern to the degree of necessity and yet solubility into an alkaline etching liquid is secured, thereby enabling to finally obtain a negative image by a positive-negative reversal by performing a wet etching using an alkaline etching liquid. A resist patterning process of the present invention using a positive-negative reversal comprises at least a step of forming a resist film by applying a positive resist composition; a step of obtaining a positive pattern by exposing and developing the resist film; a step of crosslinking the positive resist pattern thus obtained; a step of forming a reverse film; and a step of reversing the positive pattern to a negative pattern by dissolving into an alkaline wet-etching liquid for removal.
    Type: Application
    Filed: May 4, 2009
    Publication date: November 19, 2009
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Tsutomu Ogihara, Mutsuo Nakashima, Kazuhiro Katayama
  • Publication number: 20090253084
    Abstract: Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer.
    Type: Application
    Filed: April 3, 2009
    Publication date: October 8, 2009
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Katsuya TAKEMURA, Jun HATAKEYAMA, Kazumi NODA, Mutsuo NAKASHIMA, Masaki OHASHI, Toshinobu ISHIHARA
  • Patent number: 7550247
    Abstract: A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.
    Type: Grant
    Filed: August 18, 2005
    Date of Patent: June 23, 2009
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Mutsuo Nakashima, Yoshitaka Hamada, Katsuya Takemura, Kazumi Noda, Toshihiko Fujii
  • Publication number: 20090136869
    Abstract: A metal oxide-containing film is formed from a heat curable composition comprising (A) a metal oxide-containing compound obtained through hydrolytic condensation between a hydrolyzable silicon compound and a hydrolyzable metal compound, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Cs, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The metal oxide-containing film ensures effective pattern formation.
    Type: Application
    Filed: November 20, 2008
    Publication date: May 28, 2009
    Inventors: Tsutomu OGIHARA, Takafumi UEDA, Toshiharu YANO, Mutsuo NAKASHIMA
  • Patent number: 7485408
    Abstract: Fluorine-containing silicon compounds having the general formula (1): wherein X1, X2, and X3 each are hydrogen, hydroxyl, halogen, a straight, branched or cyclic alkoxy group of 1 to 6 carbon atoms, or a monovalent organic group of 1 to 20 carbon atoms having a straight, branched, cyclic or polycyclic skeleton, Y is a divalent organic group, R1 and R2 are each independently hydrogen or a monovalent organic group of 1 to 20 carbon atoms having a straight, branched, cyclic or polycyclic skeleton, or R1 and R2 may bond together to form a ring with the carbon atom to which they are attached silicone resins obtained from the compounds of formula (1) has an appropriate acidity to enable formation of a finer pattern while minimizing the pattern collapse by swelling when used in a resist composition.
    Type: Grant
    Filed: March 5, 2007
    Date of Patent: February 3, 2009
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takeshi Kinsho, Mutsuo Nakashima, Koji Hasegawa, Takeru Watanabe
  • Publication number: 20080311514
    Abstract: In a mixture of silsesquioxane compounds comprising silsesquioxane units having a side chain including a direct bond between a silicon atom and a norbornane skeleton and having a degree of condensation of substantially 100%, a dimethylene chain of the norbornane skeleton remote from the silicon bonded side is substituted with at least one substituent group other than hydrogen, and an isomer having a bulkier substituent group on the dimethylene chain at an exo position is present in a higher proportion.
    Type: Application
    Filed: September 25, 2007
    Publication date: December 18, 2008
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Mutsuo NAKASHIMA, Yoshitaka HAMADA, Katsuya TAKEMURA, Kazumi NODA
  • Publication number: 20080038664
    Abstract: A silsesquioxane compound mixture having a high proportion of silsesquioxane compounds bearing bulky substituent groups on side chain and having a degree of condensation of substantially 100% is prepared by a first stage wherein a silane feed comprising a trifunctional silane bearing a bulky substituent group on side chain represented by formula (1): wherein Y is an aliphatic or aromatic organic group optionally having a functional group, X1, X2 and X3 are H, halogen, alkoxy or aryloxy is hydrolyzed in the presence of an acid or base catalyst, and a second stage wherein dehydrating condensation is carried out in the presence of a strong base catalyst while removing the water resulting from condensation out of the reaction system.
    Type: Application
    Filed: August 3, 2007
    Publication date: February 14, 2008
    Applicant: Shin-Etsu Chemical Co. Ltd.
    Inventors: Yoshitaka Hamada, Mutsuo Nakashima
  • Publication number: 20070218402
    Abstract: Fluorine-containing silicon compounds having the general formula (1): wherein X1, X2, and X3 each are hydrogen, hydroxyl, halogen, a straight, branched or cyclic alkoxy group of 1 to 6 carbon atoms, or a monovalent organic group of 1 to 20 carbon atoms having a straight, branched, cyclic or polycyclic skeleton, Y is a divalent organic group, R1 and R2 are each independently hydrogen or a monovalent organic group of 1 to 20 carbon atoms having a straight, branched, cyclic or polycyclic skeleton, or R1 and R2 may bond together to form a ring with the carbon atom to which they are attached silicone resins obtained from the compounds of formula (1) has an appropriate acidity to enable formation of a finer pattern while minimizing the pattern collapse by swelling when used in a resist composition.
    Type: Application
    Filed: March 5, 2007
    Publication date: September 20, 2007
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takeshi Kinsho, Mutsuo Nakashima, Koji Hasegawa, Takeru Watanabe
  • Patent number: 7265234
    Abstract: A silsesquioxane compound mixture having a high proportion of silsesquioxane compounds bearing bulky substituent groups on side chain and having a degree of condensation of substantially 100% is prepared by a first stage wherein a silane feed comprising a trifunctional silane bearing a bulky substituent group on side chain represented by formula (1): wherein Y is an aliphatic or aromatic organic group optionally having a functional group, X1, X2 and X3 are H, halogen, alkoxy or aryloxy is hydrolyzed in the presence of an acid or base catalyst, and a second stage wherein dehydrating condensation is carried out in the presence of a strong base catalyst while removing the water resulting from condensation out of the reaction system.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: September 4, 2007
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yoshitaka Hamada, Mutsuo Nakashima
  • Publication number: 20070190458
    Abstract: A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a norbornane group having hexafluoroisopropyl alcohol, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.
    Type: Application
    Filed: February 8, 2007
    Publication date: August 16, 2007
    Inventors: Mutsuo Nakashima, Yoshitaka Hamada, Katsuya Takemura, Kazumi Noda
  • Publication number: 20070190457
    Abstract: A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a fluorinated norbornane group, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.
    Type: Application
    Filed: February 6, 2007
    Publication date: August 16, 2007
    Inventors: Mutsuo Nakashima, Yoshitaka Hamada, Katsuya Takemura, Kazumi Noda
  • Publication number: 20070009832
    Abstract: Silicon compounds having fluorinated hemiacetal structure are provided. Silicone resins having the same structure have an appropriate acidity to enable formation of a finer pattern by minimizing the pattern collapse by swelling, exhibit improved resistance to the etching used in the pattern transfer to an organic film, and are thus suited for use in resist compositions for the bilayer process.
    Type: Application
    Filed: July 6, 2006
    Publication date: January 11, 2007
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takeshi Kinsho, Takeru Watanabe, Mutsuo Nakashima, Yoshitaka Hamada
  • Publication number: 20060224009
    Abstract: A silsesquioxane compound mixture having a high proportion of silsesquioxane compounds bearing bulky substituent groups on side chain and having a degree of condensation of substantially 100% is prepared by a first stage wherein a silane feed comprising a trifunctional silane bearing a bulky substituent group on side chain represented by formula (1): wherein Y is an aliphatic or aromatic organic group optionally having a functional group, X1, X2 and X3 are H, halogen, alkoxy or aryloxy is hydrolyzed in the presence of an acid or base catalyst, and a second stage wherein dehydrating condensation is carried out in the presence of a strong base catalyst while removing the water resulting from condensation out of the reaction system.
    Type: Application
    Filed: March 31, 2006
    Publication date: October 5, 2006
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Yoshitaka Hamada, Mutsuo Nakashima