Abstract: A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

Abstract: Acetal compounds in which a 5- or 6-membered ring acetal structure is connected to a norbornene structure through a linker represented by —(CH2)m— in which one hydrogen atom may be substituted with a hydroxyl or acetoxy group, and m is from 1 to 8 are novel. Using the acetal compounds as a monomer, polymers are obtained. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.

Abstract: Provided is a silicon-containing positive photoresist which exhibits high resolution capacity when exposed to radiation having a wavelength of 300 nm or less, especially KrF (248 nm) or ArF (193 nm), which has excellent dry etching resistance and which can be developed with an aqueous alkali solution. Provided is a radiation sensitive polymer composition comprising (A) a polysiloxane compound which comprises at least one structural unit represented by formula (1) having an acid-dissociable group, and at least one structural unit represented by formula (2) comprising at least one fluorine atom; which is alkali insoluble or alkali sparingly soluble but becomes alkali soluble when the acid-dissociable group dissociates; and which has an average fluorine atom content of more than 2 wt % but not more than 11 wt %; (B) an acid generator; and (C) a basic compound.

Abstract: A novel polymer is obtained by copolymerizing a (meth)acrylic acid derivative with a vinyl ether compound, an allyl ether compound and an oxygen-containing alicyclic olefin compound. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.

Abstract: Provided is a positive resist material, particularly a chemically amplified positive resist material having higher sensitivity, higher resolution, a higher exposure latitude and better process adaptability than conventional positive resist materials, and providing a good pattern profile after exposure, particularly having lessened line edge roughness and exhibiting excellent etching resistance. These materials may contain, preferably an organic solvent and acid generator, more preferably a dissolution inhibitor or a basic compound and/or a surfactant. Provided is a positive resist material comprising a polymer comprising at least one monomer unit selected from a group consisting of a monomer unit (A), a monomer unit (B) and a monomer unit (C) represented by the following formula (1); and having a glass transition temperature (Tg) of 100° C. or greater.

Abstract: An ether compound of formula (1) is provided wherein R1 is H or C1-6 alkyl, R2 is C1-6 alkyl, R3 is H, C1-15 acyl or C1-25 alkoxycarbonyl which may be substituted with halogen atoms, k is 0 or 1, m is from 0 to 3, and n is from 3 to 6. The ether compound is polymerized to form a polymer having improved reactivity, robustness and substrate adhesion. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV.

Abstract: A polymer bearing specific silicon-containing groups is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity and resolution at a wavelength of less than 300 nm, and high resistance to oxygen plasma etching. The resist composition lends itself to micropatterning for the fabrication of VLSIs.

Abstract: Cyclic acetal compounds of formula (1) wherein k=0 or 1 and n is an integer of 0 to 6 are novel. Using the cyclic acetal compounds as a monomer, polymers are obtained. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.

Abstract: The invention provides a high molecular weight silicone compound comprising recurring units of formula (1) and having a weight average molecular weight of 1,000-50,000. Some or all of the hydrogen atoms of carboxyl groups or carboxyl and hydroxyl groups in the silicone compound may be replaced by acid labile groups. Z is a di- to hexavalent, non-aromatic, monocyclic or polycyclic hydrocarbon or bridged cyclic hydrocarbon group; Z is a di- to hexavalent, normal or branched hydrocarbon group or non-aromatic, monocyclic or polycyclic hydrocarbon or bridged cyclic hydrocarbon group; x, y and z are integers of 1-5 corresponding to the valence of Z and Z′; R1 is —OCHR—R′—OH or —NHCHR—R′—OH; R2 is alkyl or alkenyl or a monovalent, non-aromatic, polycyclic hydrocarbon or bridged cyclic hydrocarbon group; p1, p2, p3 and p4 are 0 or positive numbers.

Abstract: An ether compound of formula (1) is provided wherein R1 is H or C1-6 alkyl, R2 is C1-6 alkyl, R3 is H, C1-15 acyl or C1-25 alkoxycarbonyl which may be substituted with halogen atoms, k is 0 or 1, m is from 0 to 3, and n is from 3 to 6. The ether compound is polymerized to form a polymer having improved reactivity, robustness and substrate adhesion. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV.

Abstract: An object of the present invention is to provide a polymer which has excellent reactivity, rigidity and adhesion to the substrate, and undergoes a low degree of swelling during development, a resist material which uses this polymer as the base resin and hence exhibits much higher resolving power and etching resistance than conventional resist materials, and a pattern formation method using this resist material. Specifically, the present invention provides a novel polymer containing repeating units represented by the following general formula (1-1) or (1-2) and having a weight-average molecular weight of 1,000 to 500,000, a resist material using the polymer as a base resin, and a pattern formation method using the resist material.

Abstract: The invention provides a polymer comprising recurring units of formula (1—1) or (1-2) wherein k is 0 or 1, m is 0, 1, 2, 3 or 4, and n is 1 or 2 and having a weight average molecular weight of 1,000 to 500,000. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV.

Abstract: A polymer comprising recurring units of formula (1-1) or (1-2) wherein R1 and R2 are H or C1-15 alkyl, R1 and R2, taken together, may form a ring; R3 is H, C1-15 alkyl, acyl or alkylsulfonyl or C2-15 alkoxycarbonyl or alkoxyalkyl which may have halogen substituents, not all R1, R2 and R3 are hydrogen; and k=0 or 1, and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.

Abstract: An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, R4 is branched or cyclic, tertiary C5-C20 alkyl group, Z is a divalent C1-C10 hydrocarbon group, and k is 0 or 1. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and is suited for micropatterning using electron beams or deep-UV.

Abstract: The invention provides a polymer comprising recurring units containing bridged aliphatic rings in the backbone and having a hydroxyl, acyloxy or alkoxylcarbonyloxy group as well as a lactone structure bonded through a spacer, the polymer having a weight average molecular weight of 1,000-500,000. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV.

Abstract: An ether compound of formula (1) is provided wherein R1 is H or C1-6 alkyl, R2 is C1-6 alkyl, R3 is H, C1-15 acyl or C1-15 alkoxycarbonyl which may be substituted with halogen atoms, k is 0 or 1, m is from 0 to 3, and n is from 3 to 6. The ether compound is polymerized to form a polymer having improved reactivity, robustness and substrate adhesion.

Abstract: Acetal compounds in which a 5- or 6-membered ring acetal structure is connected to a norbornene structure through a linker represented by —(CH2)m— in which one hydrogen atom may be substituted with a hydroxyl or acetoxy group, and m is from 1 to 8 are novel. Using the acetal compounds as a monomer, polymers are obtained. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.

Abstract: A polymer comprising recurring units of formula (1-1) or (1-2) wherein R1, R2, R3 and R4 are H or C1-15 alkyl, R1 and R2, and R3 and R4, taken together, may form a ring; R5 and R6 are H, C1-15 alkyl, acyl or alkylsulfonyl groups or C2-15 alkoxycarbonyl or alkoxyalkyl groups which may have halogen substituents; and k=0 or 1, and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.

Abstract: An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, k is 0 or 1, Z is a divalent C2-C20 hydrocarbon group which forms a single ring or bridged ring with the carbon atom and which may contain a hetero atom, m is 0 or 1, n is 0, 1, 2 or 3, and 2m+n=2 or 3. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and is suited for micropatterning using electron beams or deep-UV.

Abstract: An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, Z is a divalent C2-C20 hydrocarbon group which forms a single ring or bridged ring with the carbon atom, m is 0 or 1, n is 0, 1, 2 or 3, and 2m+n=2 or 3. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for micropatterning using electron beams or deep-UV.