Abstract: Disclosed is a modified polyisobutylene polymer for rubber compounding. The modified polyisobutylene polymer is prepared by reacting reactants including a polyisobutylene in which the main chain is isobutylene, an unsaturated dicarboxylic anhydride, and an amino group-containing silane compound. The modified polyisobutylene polymer includes a diamide structure. When the modified polyisobutylene polymer is used as an additive for rubber compounding, the processability of the rubber is increased, the dispersibility of fillers is significantly improved, and the effect of obtaining excellent grip performance and improved rolling resistance can be achieved.

Abstract: Disclosed is a polybutene derivative for rubber compounding. The polybutene derivative includes 30% to 98% by weight of polyisobutylene, 1% to 35% by weight of unsaturated dicarboxylic anhydride, and 1% to 50% by weight of at least one selected from among alkanolamines, amine-based compounds, and polyhydric alcohols. When the polybutene derivative is added as an additive for rubber, the polybutene derivative dramatically improves the dispersibility of a filler and improves both the grip performance and the rolling resistance at the same time.

Abstract: The present invention relates to a modified polyisobutylene polymer for rubber compounding including polyisobutylene having isobutylene as a main chain, unsaturated dicarboxylic anhydride, and a silane compound, and more particularly, 20 to 80 wt % of polyisobutylene having isobutylene as a main chain, 1 to 20 wt % of unsaturated dicarboxylic anhydride, and 1 to 60 wt % of a silane compound. In particular, when the polyisobutylene polymer of the present invention is used as an additive for rubber, the dispersibility of a filler can be significantly increased and both grip performance and rolling resistance can be improved.

Abstract: Disclosed is a modified polyisobutylene polymer for rubber compounding. The modified polyisobutylene polymer is prepared by reacting reactants including a polyisobutylene in which the main chain is isobutylene, an unsaturated dicarboxylic anhydride, and an amino group-containing silane compound. The modified polyisobutylene polymer includes a diamide structure. When the modified polyisobutylene polymer is used as an additive for rubber compounding, the processability of the rubber is increased, the dispersibility of fillers is significantly improved, and the effect of obtaining excellent grip performance and improved rolling resistance can be achieved.

Abstract: Disclosed is a polybutene derivative for rubber compounding. The polybutene derivative includes 30% to 98% by weight of polyisobutylene, 1% to 35% by weight of unsaturated dicarboxylic anhydride, and 1% to 50% by weight of at least one selected from among alkanolamines, amine-based compounds, and polyhydric alcohols. When the polybutene derivative is added as an additive for rubber, the polybutene derivative dramatically improves the dispersibility of a filler and improves both the grip performance and the rolling resistance at the same time.

Abstract: A method for preparing polybutene by polymerization of a raw material of a carbon number 4 (C4) compounds having an isobutene amount of 50 to 75% by weight, is disclosed.

Abstract: A CMOS transistor manufacturing method includes: forming a gate insulating film on a semiconductor substrate; forming a first gate electrode pattern on the gate insulating film in an NMOS transistor area; forming a second gate electrode pattern on the gate insulating film in a PMOS transistor area; forming a first photoresist pattern covering the NMOS transistor area to expose the second gate electrode pattern; performing a first ion injection process into the PMOS transistor area to form an n-type well region and a p-type LDD region; removing the first photoresist pattern; forming a second photoresist pattern covering the PMOS transistor area to expose the first gate electrode pattern; performing a second ion injection process into the NMOS transistor area to form a p-type well region and an n-type LDD region; removing the second photoresist pattern; and forming sidewall spacers at sidewalls of the first and second gate electrode patterns.

Abstract: The present invention relates to a modified polyisobutylene polymer for rubber compounding including polyisobutylene having isobutylene as a main chain, unsaturated dicarboxylic anhydride, and a silane compound, and more particularly, 20 to 80 wt % of polyisobutylene having isobutylene as a main chain, 1 to 20 wt % of unsaturated dicarboxylic anhydride, and 1 to 60 wt % of a silane compound. In particular, when the polyisobutylene polymer of the present invention is used as an additive for rubber, the dispersibility of a filler can be significantly increased and both grip performance and rolling resistance can be improved.

Abstract: A single poly multi time program (MTP) cell includes a second conductivity-type well, a sensing transistor comprising a drain, a sensing gate, and a source, a drain electrode connected to the drain, a source electrode connected to the source; a control gate connected to the sensing gate of the sensing transistor, and a control gate electrode, wherein the sensing transistor, the drain electrode, the source electrode, the control gate, and the control gate electrode are located on the second conductivity-type well.

Abstract: A method for preparing polybutene by polymerization of a raw material of a carbon number 4 (C4) compounds having an isobutene amount of 50 to 75% by weight, is disclosed.

Abstract: A CMOS transistor manufacturing method includes: forming a gate insulating film on a semiconductor substrate; forming a first gate electrode pattern on the gate insulating film in an NMOS transistor area; forming a second gate electrode pattern on the gate insulating film in a PMOS transistor area; forming a first photoresist pattern covering the NMOS transistor area to expose the second gate electrode pattern; performing a first ion injection process into the PMOS transistor area to form an n-type well region and a p-type LDD region; removing the first photoresist pattern; forming a second photoresist pattern covering the PMOS transistor area to expose the first gate electrode pattern; performing a second ion injection process into the NMOS transistor area to form a p-type well region and an n-type LDD region; removing the second photoresist pattern; and forming sidewall spacers at sidewalls of the first and second gate electrode patterns.

Abstract: A single poly multi time program (MTP) cell includes a second conductivity-type well, a sensing transistor comprising a drain, a sensing gate, and a source, a drain electrode connected to the drain, a source electrode connected to the source; a control gate connected to the sensing gate of the sensing transistor, and a control gate electrode, wherein the sensing transistor, the drain electrode, the source electrode, the control gate, and the control gate electrode are located on the second conductivity-type well.

Abstract: A CMOS transistor manufacturing method includes: forming a gate insulating film on a semiconductor substrate; forming a first gate electrode pattern on the gate insulating film in an NMOS transistor area; forming a second gate electrode pattern on the gate insulating film in a PMOS transistor area; forming a first photoresist pattern covering the NMOS transistor area to expose the second gate electrode pattern; performing a first ion injection process into the PMOS transistor area to form an n-type well region and a p-type LDD region; removing the first photoresist pattern; forming a second photoresist pattern covering the PMOS transistor area to expose the first gate electrode pattern; performing a second ion injection process into the NMOS transistor area to form a p-type well region and an n-type LDD region; removing the second photoresist pattern; and forming sidewall spacers at sidewalls of the first and second gate electrode patterns.

Abstract: A method for preparing polybutene includes the steps of: supplying a C4 mixture to an isomerization reactor in which (i) 1-butene is isomerized into 2-butene by a hydrogen isomerization reaction using an isomerization catalyst in an isomerization zone of the isomerization reactor and (ii) iso-butene and 2-butene are separated by fractional distillation in a fractional distillation zone; supplying a C4 mixture containing 2-butene which is separated in the isomerization reactor to a skeletal isomerization reactor, in which a part of normal-butene is skeletal isomerized into iso-butene by a skeletal isomerization reaction using a skeletal isomerization catalyst, and the obtained skeletal isomerization mixture is supplied and recycled to the isomerization reactor; and supplying (i) a raw material containing the iso-butene of high concentration and which is separated from the isomerization reactor and (ii) a polymerization catalyst to a polybutene polymerization reactor and thereby producing polybutene by a polyme

Abstract: A method of searching for and providing information about a natural language query having a simple or complex sentence structure, includes: generating a mashup query language having a tree structure in a plurality of levels based on at least one query entity included in a natural language query language via a semantic analysis of the natural language query language; determining whether the plurality of levels are linked through a query entity forming each of the plurality of levels based on attribute information of the mashup query language; searching for data corresponding to the query entity forming each of the plurality of levels from a knowledge database based on a result of the determining, and deriving main information and at least one piece of entity information corresponding to the natural language query language from found data; and laying out a search result screen including the main information and the at least one piece of entity information.

Abstract: A CMOS transistor manufacturing method includes: forming a gate insulating film on a semiconductor substrate; forming a first gate electrode pattern on the gate insulating film in an NMOS transistor area; forming a second gate electrode pattern on the gate insulating film in a PMOS transistor area; forming a first photoresist pattern covering the NMOS transistor area to expose the second gate electrode pattern; performing a first ion injection process into the PMOS transistor area to form an n-type well region and a p-type LDD region; removing the first photoresist pattern; forming a second photoresist pattern covering the PMOS transistor area to expose the first gate electrode pattern; performing a second ion injection process into the NMOS transistor area to form a p-type well region and an n-type LDD region; removing the second photoresist pattern; and forming sidewall spacers at sidewalls of the first and second gate electrode patterns.

Abstract: A CMOS transistor manufacturing method includes: forming a gate insulating film on a semiconductor substrate; forming a first gate electrode pattern on the gate insulating film in an NMOS transistor area; forming a second gate electrode pattern on the gate insulating film in a PMOS transistor area; forming a first photoresist pattern covering the NMOS transistor area to expose the second gate electrode pattern; performing a first ion injection process into the PMOS transistor area to form an n-type well region and a p-type LDD region; removing the first photoresist pattern; forming a second photoresist pattern covering the PMOS transistor area to expose the first gate electrode pattern; performing a second ion injection process into the NMOS transistor area to form a p-type well region and an n-type LDD region; removing the second photoresist pattern; and forming sidewall spacers at sidewalls of the first and second gate electrode patterns.

Abstract: There are disclosed an apparatus and a method for selectively preparing a high reactivity polybutene, a midrange reactivity polybutene and a non-reactive polybutene in a single plant. The apparatus for selectively preparing a reactive polybutene and a non-reactive polybutene, comprises: a reactive polybutene polymerization catalyst feeder for polymerization of the reactive polybutene; a non-reactive polybutene polymerization catalyst feeder for polymerization of the non-reactive polybutene; and a reactor for polymerizing a reactant including isobutene into polybutene, wherein the reactive polybutene polymerization catalyst feeder provides a catalyst to yield the reactive polybutene; and the non-reactive polybutene polymerization catalyst feeder provides a catalyst to yield the non-reactive polybutene.

Abstract: Disclosed a method for preparing polybutene by using a catalyst including normal propanol, wherein the polybutene has 40 to 70% of vinylidene content and 10% or more of tetra-substituted double bond content by using a complex catalyst including normal propanol as a cocatalyst and a main catalyst such as boron trifluoride. The method comprises: introducing, to a raw reaction material including 10 wt % or more of isobutene, a complex catalyst including normal propanol as a cocatalyst and boron trifluoride as a main catalyst; and polymerizing the raw reaction material at a reaction temperature of ?33 to 33° C. under a reaction pressure of 3 to 50 kg/cm2, wherein the vinylidene content is adjusted by adjusting the reaction temperature.

Abstract: A method for removing the fluorine component from waste water which is produced during the manufacturing process of highly reactive polybutene and contains high concentration of fluorine component, is disclosed. The method comprises a step of adding to the waste water a treating agent selected from a group of Al compound, Ca compound and mixture thereof at temperature of 50 to 300° C. for reaction, whereby boron trifluoride neutralized salt is decomposed to form Al salt or Ca salt of fluorine component so that the fluorine component is removed in the form of the Al salt or the Ca salt of fluorine component.