Abstract: A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer.

Abstract: A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer.

Abstract: A wire is provided on an insulating substrate to have a first thickness in a first area and a second thickness smaller than the first thickness in a second area except for the first area. A display apparatus includes the wire. The wire is formed by forming a first conductive layer and a second conductive layer on the insulating substrate and etching the first and second conductive layers using photoresist layer patterns having different thicknesses.