Abstract: A power voltage generator includes a booster, a voltage sensor, a constant voltage controller and a constant current controller. The booster is configured to boost an input voltage to an output voltage based on an on-off operation of a switch. The voltage sensor is configured to generate a sensing voltage by sensing the output voltage. The constant voltage controller is configured to generate a first switching signal to control the switch by comparing the sensing voltage with a reference voltage. The constant current controller is configured to generate a gain based on a ratio of an electrode signal of the switch and a target signal by comparing the electrode signal of the switch with the target signal.

Abstract: The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed. According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.

Abstract: The present invention relates to a composition for treating a semiconductor substrate, and particularly to a composition for treating an edge portion of a wafer coated with polysilazane. According to the composition for treating a semiconductor substrate according to the present invention, it is possible to uniformly maintain the quality of the composition in terms of management and to uniformly treat the boundary of the wafer in terms of processing. In addition, by improving the straightness of the boundary portion where polysilazane is removed, it is possible to significantly reduce the defect rate of the product and to stably improve the productivity yield.

Abstract: The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed. According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.

Abstract: An organic light emitting display device and a driving method thereof are disclosed. The display device has sub-pixels of multiple colors. In one aspect, the organic light emitting display device detects sub-pixels which are positioned at the edges of the panel. Data for the sub-pixels on the edges are reduced so that colors on the edges are less observable.

Abstract: The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film. The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.

Abstract: The present disclosure provides an etching composition for a metal nitride layer and an etching method of a metal nitride layer using the same, and more particularly, to an etching composition for a metal nitride layer selectively etching the metal nitride layer, an etching method of a metal nitride layer using the etching composition, and a method of manufacturing a microelectronic device, the method including an etching process performed using the etching composition.

Abstract: The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film. The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.

Abstract: A display device and a driving method thereof are disclosed, and the display device includes a first pixel connected to a first data line, a first scan line, and a first power source line, emitting light in a first period, and not emitting light in a second period following the first period; a second pixel connected to a second data line, the first scan line, and the first power source line, not emitting light in the first period, and emitting light in the second period; a current sensor sensing a current flowing through the first power source line in the first period to provide a first sensing current value, and sensing the current flowing through the first power source line in the second period to provide a second sensing current value; and a memory storing a first block target current value corresponding to the first sensing current value and a second block target current value corresponding to the second sensing current value.

Abstract: Provided is an etchant composition for a semiconductor substrate which may selectively etch a high-concentration doped layer of an extrinsic semiconductor, and according to the present disclosure, an etchant composition for a semiconductor substrate which, in etching an extrinsic semiconductor substrate including doped layers having different doping concentrations, may etch the high-concentration doped layer at a high selection ratio, and suppress bubble formation during an etching process to allow uniform and stable etching, an etching method using the same, and a manufacturing method of a semiconductor substrate may be provided.

Abstract: A power voltage generator includes a booster, a voltage sensor, a constant voltage controller and a constant current controller. The booster is configured to boost an input voltage to an output voltage based on an on-off operation of a switch. The voltage sensor is configured to generate a sensing voltage by sensing the output voltage. The constant voltage controller is configured to generate a first switching signal to control the switch by comparing the sensing voltage with a reference voltage. The constant current controller is configured to generate a gain based on a ratio of an electrode signal of the switch and a target signal by comparing the electrode signal of the switch with the target signal.

Abstract: An organic light emitting display device and a driving method thereof are disclosed. The display device has sub-pixels of multiple colors. In one aspect, the organic light emitting display device detects sub-pixels which are positioned at the edges of the panel. Data for the sub-pixels on the edges are reduced so that colors on the edges are less observable.

Abstract: A power voltage generator includes a booster, a voltage sensor, a constant voltage controller and a constant current controller. The booster is configured to boost an input voltage to an output voltage based on an on-off operation of a switch. The voltage sensor is configured to generate a sensing voltage by sensing the output voltage. The constant voltage controller is configured to generate a first switching signal to control the switch by comparing the sensing voltage with a reference voltage. The constant current controller is configured to generate a gain based on a ratio of an electrode signal of the switch and a target signal by comparing the electrode signal of the switch with the target signal.

Abstract: A display device and a driving method thereof are disclosed, and the display device includes a first pixel connected to a first data line, a first scan line, and a first power source line, emitting light in a first period, and not emitting light in a second period following the first period; a second pixel connected to a second data line, the first scan line, and the first power source line, not emitting light in the first period, and emitting light in the second period; a current sensor sensing a current flowing through the first power source line in the first period to provide a first sensing current value, and sensing the current flowing through the first power source line in the second period to provide a second sensing current value; and a memory storing a first block target current value corresponding to the first sensing current value and a second block target current value corresponding to the second sensing current value.

Abstract: An organic light emitting display device and a driving method thereof are disclosed. The display device has sub-pixels of multiple colors. In one aspect, the organic light emitting display device detects sub-pixels which are positioned at the edges of the panel. Data for the sub-pixels on the edges are reduced so that colors on the edges are less observable.

Abstract: A cleaning composition for removing post-etch or post-ash residues from a semiconductor substrate, and a cleaning method using the same are disclosed. The cleaning composition can comprise water; a fluorine compound; an alkanolamine compound; and a corrosion inhibitor. The corrosion inhibitor is a mixture of a first corrosion inhibitor and a second corrosion inhibitor. When using the cleaning composition, it is possible to efficiently remove the residues of various aspects existing on a surface of the substrate or the semiconductor device without damage to a substrate or a semiconductor device including various metal layers, insulating layers, etc. Accordingly, when a highly integrated and miniaturized semiconductor device is manufactured, it may be advantageously applied to the removal of residues generated on the surface of the substrate or the semiconductor device.

Abstract: A bumper beam of a vehicle according to the present invention includes a pair of mounting portions for being fixed to a vehicle member, a supporting portion having a cross-section in which a front surface is closed and a rear surface opens and having both ends supporting the pair of mounting portions, a web disposed in front of the supporting portion, an energy absorbing portion supporting a rear surface of the web and supported by the front surface of the supporting portion to absorb energy generated when a colliding object collides to with the web, and an energy transmitting portion connecting the energy absorbing portion and the pair of mounting portions.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.