Patents by Inventor Myung-Koo Kang

Myung-Koo Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110222015
    Abstract: A liquid crystal display including: a first substrate on which a first electrode and a first orientation layer are formed; a second substrate facing the first substrate and including a second electrode and a second orientation layer; a sealant formed along edges of the first substrate and the second substrate; and a liquid crystal layer between the first electrode and the second electrode; wherein holes are formed in the first and second orientation layers and the sealant is bonded to the first and second subatrates through both side holes. Since a contact area between the sealant and the substrates is increased and a bonding force is improved, a stable sealing state can be maintained with a small area and a size of a non-pixel region is reduced so that a small-sized liquid crystal display can be achieved.
    Type: Application
    Filed: January 12, 2011
    Publication date: September 15, 2011
    Applicant: Samsung Mobile Display Co., LTD.
    Inventor: Myung-Koo KANG
  • Patent number: 7892704
    Abstract: A mask for silicon crystallization capable of minimizing the number of grain boundaries in crystallized silicon, a method for crystallizing silicon using the mask, and a display device are presented. The mask includes a group of slits that are inclined at a predetermined angle with respect to a scan direction and a group of slits including slits inclined at a predetermined angle with respect to the former group of slits. The groups of slits are separated by an interval along the scan direction, and the substrate and/or mask is moved by the interval between irradiation by laser through the slits. Further, there are provided a method for crystallizing silicon using the mask and a display device. By reducing the number of grain boundaries that extend horizontally or vertically on the substrate, the invention obviates a design limitation associated with the directional anisotropy in sequential lateral solidification (SLS) technique.
    Type: Grant
    Filed: January 12, 2007
    Date of Patent: February 22, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myung Koo Kang, Soong Yong Joo
  • Patent number: 7879700
    Abstract: A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by the laser beam from the optical units. The first optical unit makes the laser beam have a transverse edge and a longitudinal edge longer than the transverse edge, and the second optical unit makes the laser beam have a transverse edge and a longitudinal edge shorter than the transverse edge.
    Type: Grant
    Filed: February 24, 2004
    Date of Patent: February 1, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ui-Jin Chung, Dong-Byum Kim, Su-Gyeong Lee, Myung-Koo Kang, Hyun-Jae Kim
  • Patent number: 7858450
    Abstract: An optic mask for crystallizing amorphous silicon comprises a first slit region including a plurality of slits regularly arranged for defining incident region of laser beam, wherein the slits of the first slit region are formed to slope by a predetermined angle to the direction of transfer of the optic mask in crystallization process, and wherein the slits of the first slit region includes a first slit having a first length and a second slit having a second length which is longer than the first length.
    Type: Grant
    Filed: January 5, 2005
    Date of Patent: December 28, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ui-Jin Chung, Myung-Koo Kang, Jae-Bok Lee
  • Patent number: 7791076
    Abstract: A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.
    Type: Grant
    Filed: May 20, 2009
    Date of Patent: September 7, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myung-Koo Kang, Hyun-Jae Kim, Sook-Young Kang, Woo-Suk Chung
  • Patent number: 7781765
    Abstract: A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while baring the same width, a third slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, and a fourth slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width. The slit patterns arranged at the first to fourth slit regions are sequentially enlarged in width in the horizontal direction in multiple proportion to the width d of the slit pattern at the first slit region. The centers of the slit patterns arranged at the first to fourth slit regions in the horizontal direction are placed at the same line.
    Type: Grant
    Filed: April 19, 2007
    Date of Patent: August 24, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myung-Koo Kang, Hyun-Jae Kim, Sook-Young Kang
  • Patent number: 7691545
    Abstract: A crystallization mask for laser illumination for converting amorphous silicon into polysilicon is provided, which includes: a plurality of transmissive areas having a plurality of first slits for adjusting energy of the laser illumination passing through the mask; and an opaque area.
    Type: Grant
    Filed: September 19, 2006
    Date of Patent: April 6, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Su-Gyeong Lee, Hyun-Jae Kim, Myung-Koo Kang
  • Publication number: 20090224262
    Abstract: A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.
    Type: Application
    Filed: May 20, 2009
    Publication date: September 10, 2009
    Inventors: Myung-Koo Kang, Hyun-Jae Kim, Sook-Young Kang, Woo-Suk Chung
  • Patent number: 7538349
    Abstract: The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.
    Type: Grant
    Filed: January 9, 2007
    Date of Patent: May 26, 2009
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Myung-Koo Kang, Hyun-Jae Kim, Sook-Young Kang, Woo-Suk Chung
  • Patent number: 7488633
    Abstract: A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask.
    Type: Grant
    Filed: January 18, 2008
    Date of Patent: February 10, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myung-Koo Kang, Sook-Young Kang, Hyun-Jae Kim
  • Publication number: 20080297440
    Abstract: The display device includes a display panel which includes a plurality of pixels, a gate driver which sequentially applies gate-on voltages to the plurality of pixels for a first period and a data driver which generates data voltages for at least two pixels of the plurality of pixels for the first period, and supplies the data voltages to the two pixels of the plurality of pixels, respectively, wherein an application order of the data voltages applied to the at least two pixels of the plurality of pixels is reversed in two adjacent frames.
    Type: Application
    Filed: October 31, 2007
    Publication date: December 4, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: SEOCK-CHEON SONG, JUN-YOUNG LEE, MYUNG-KOO KANG, SUNG-WOOK KANG, JONG-HWA PARK, YOUNG-KWANG KIM
  • Publication number: 20080206912
    Abstract: An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern having at least one block. Grains are formed in each of the at least one block that are extended in a plurality of directions. The pixel electrode is electrically connected to the switching element. Therefore, current mobility and design margin of the switching element are improved.
    Type: Application
    Filed: April 28, 2008
    Publication date: August 28, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soong-Yong JOO, Myung-Koo KANG
  • Patent number: 7405464
    Abstract: An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern having at least one block. Grains are formed in each of the at least one block that are extended in a plurality of directions. The pixel electrode is electrically connected to the switching element. Therefore, current mobility and design margin of the switching element are improved.
    Type: Grant
    Filed: March 22, 2006
    Date of Patent: July 29, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soong-Yong Joo, Myung-Koo Kang
  • Publication number: 20080166892
    Abstract: A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another.
    Type: Application
    Filed: January 18, 2008
    Publication date: July 10, 2008
    Inventors: Myung-Koo Kang, Sook-Young Kang, Hyun-Jae Kim
  • Publication number: 20080115718
    Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.
    Type: Application
    Filed: October 3, 2007
    Publication date: May 22, 2008
    Inventors: Hyun-Jae Kim, Sook-Young Kang, Dong-Byum Kim, Su-Gyeong Lee, Myung-Koo Kang
  • Publication number: 20080070386
    Abstract: A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector; and an absorber for absorbing the laser beam reflected by the reflector.
    Type: Application
    Filed: November 6, 2007
    Publication date: March 20, 2008
    Inventors: Hyun-Jae Kim, Myung-Koo Kang
  • Patent number: 7335541
    Abstract: A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask are grown to be isotropic with respect to the horizontal and vertical directions.
    Type: Grant
    Filed: May 26, 2004
    Date of Patent: February 26, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myung-Koo Kang, Sook-Young Kang, Hyun-Jae Kim
  • Patent number: 7294538
    Abstract: A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector, and an absorber for absorbing the laser beam reflected by the reflector.
    Type: Grant
    Filed: October 21, 2003
    Date of Patent: November 13, 2007
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Hyun-Jae Kim, Myung-Koo Kang
  • Patent number: 7294857
    Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.
    Type: Grant
    Filed: February 3, 2005
    Date of Patent: November 13, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyun-Jae Kim, Sook-Young Kang, Dong-Byum Kim, Su-Gyeong Lee, Myung-Koo Kang
  • Publication number: 20070187846
    Abstract: A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while baring the same width, a third slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, and a fourth slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width. The slit patterns arranged at the first to fourth slit regions are sequentially enlarged in width in the horizontal direction in multiple proportion to the width d of the slit pattern at the first slit region. The centers of the slit patterns arranged at the first to fourth slit regions in the horizontal direction are placed at the same line.
    Type: Application
    Filed: April 19, 2007
    Publication date: August 16, 2007
    Inventors: Myung-Koo Kang, Hyun-Jae Kim, Sook-Young Kang