Patents by Inventor Myung Soo Huh

Myung Soo Huh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10679858
    Abstract: A deposition apparatus includes a chamber, a susceptor that supports a substrate in the chamber, an upper electrode facing the susceptor, a showerhead defining a gas inlet space between the upper electrode and the susceptor, a metal source storage to store a metal source supplied to the chamber, a vaporizer to vaporize the metal source, a first gas source to supply a first gas to move the metal source toward the vaporizer, a second gas source to supply a second gas to move the metal source in the vaporizer toward the chamber, a third gas source connected to the chamber to supply a third gas into a reaction space defined between the susceptor and the upper electrode such that the third gas reacts with the metal source, and a fourth gas source connected to the chamber to supply a fourth gas used to clean an inside of the chamber.
    Type: Grant
    Filed: October 18, 2018
    Date of Patent: June 9, 2020
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Dong Kyun Ko, Woo Jin Kim, Myung Soo Huh, In Kyo Kim, Keun Hee Park
  • Publication number: 20200173015
    Abstract: Provided is a vapor deposition apparatus including a first injection unit injecting a first raw gas in a first direction and a first filter unit mounted on the first injection unit. The first filter unit includes a plurality of plates separated from one another in the first direction and disposed in parallel to one another, each of the plurality of plates having holes therein, being detachably coupled with the first filter unit, and having the holes with sizes of horizontal cross-sections gradually increasing in a direction in which the first raw gas moves. Accordingly, a process efficiency of the vapor deposition apparatus may be enhanced.
    Type: Application
    Filed: January 28, 2020
    Publication date: June 4, 2020
    Inventors: CHOEL-MIN JANG, JIN-KWANG KIM, SUNG-CHUL KIM, JAE-HYUN KIM, SEUNG-YONG SONG, SUK-WON JUNG, MYUNG-SOO HUH
  • Publication number: 20190390342
    Abstract: A thin film processing apparatus includes a susceptor and a showerhead facing the susceptor. The showerhead includes a first plate including an inner tunnel, a first injection hole, and a second injection hole. The inner tunnel extends across the first pate in a thickness direction of the first plate. The first injection hole penetrates a first surface and a second surface of the first plate on opposite sides of the first plate in the thickness direction, The second injection hole penetrates the second surface of the first plate. The second injection is connected with the inner tunnel.
    Type: Application
    Filed: June 7, 2019
    Publication date: December 26, 2019
    Inventors: WOO JIN KIM, Dong Kyun KO, Keun Hee PARK, Myung Soo HUH, Seon Uk PARK
  • Patent number: 10480076
    Abstract: A plasma enhanced chemical vapor deposition (PECVD) apparatus including a chamber; an upper electrode in the chamber; a spray unit in the upper electrode to spray a gas introduced from outside the chamber toward a substrate inside the chamber; a susceptor on which the substrate is mountable; a plurality of mask supports in a mask frame at an edge of the susceptor, the mask supports being formed of a conductive material that provides elastic force by supporting a mask to maintain and control a level of the mask; and a power supply unit to supply power to the upper electrode.
    Type: Grant
    Filed: February 22, 2016
    Date of Patent: November 19, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jai Hyuk Choi, Won Woong Park, Sung Hun Key, Min Soo Kim, Byeong Chun Lee, Suk Won Jung, Hyun Woo Joo, Myung Soo Huh
  • Publication number: 20190326122
    Abstract: A deposition apparatus includes a chamber, a susceptor that supports a substrate in the chamber, an upper electrode facing the susceptor, a showerhead defining a gas inlet space between the upper electrode and the susceptor, a metal source storage to store a metal source supplied to the chamber, a vaporizer to vaporize the metal source, a first gas source to supply a first gas to move the metal source toward the vaporizer, a second gas source to supply a second gas to move the metal source in the vaporizer toward the chamber, a third gas source connected to the chamber to supply a third gas into a reaction space defined between the susceptor and the upper electrode such that the third gas reacts with the metal source, and a fourth gas source connected to the chamber to supply a fourth gas used to clean an inside of the chamber.
    Type: Application
    Filed: October 18, 2018
    Publication date: October 24, 2019
    Inventors: Dong Kyun KO, Woo Jin KIM, Myung Soo HUH, In Kyo KIM, Keun Hee PARK
  • Patent number: 10446753
    Abstract: A vapor deposition apparatus in which a deposition process is performed by moving a substrate, the vapor deposition apparatus including a supply unit that injects at least one raw material gas towards the substrate, and a blocking gas flow generation unit that is disposed corresponding to the supply unit and generates a gas-flow that blocks a flow of the raw material gas.
    Type: Grant
    Filed: July 8, 2016
    Date of Patent: October 15, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jin-Kwang Kim, Seung-Yong Song, Myung-Soo Huh, Suk-Won Jung, Choel-Min Jang, Jae-Hyun Kim, Sung-Chul Kim
  • Publication number: 20190256978
    Abstract: A plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.
    Type: Application
    Filed: May 6, 2019
    Publication date: August 22, 2019
    Inventors: Yong-Suk LEE, Suk-Won JUNG, Myung-Soo HUH, Mi-Ra AN
  • Publication number: 20190214233
    Abstract: A plasma processing device including a chamber, a plurality of dielectric windows covering a top portion of the chamber, a lid frame supporting the dielectric windows on a same plane, a plurality of supporting bars supporting a top portion of the lid frame, and a plurality of antennas positioned above the dielectric windows, in which the antennas include a first antenna positioned inside an area defined by the supporting bars and having a loop form, and a second antenna positioned outside the area defined by the supporting bars and having a loop form, and a first current direction in the first antenna and a second current direction in the second antenna are the same as each other.
    Type: Application
    Filed: October 29, 2018
    Publication date: July 11, 2019
    Inventors: Soo Beom JO, Hae Young YOO, Ju Hee LEE, Yong Mun CHANG, Myung Soo HUH
  • Publication number: 20190169747
    Abstract: A vapor deposition apparatus for providing a deposition film on a substrate, the vapor deposition apparatus includes a plurality of first nozzle parts which injects a first raw material toward the substrate; a plurality of second nozzle parts which is alternately disposed together with the plurality of first nozzle parts and injects a second raw material toward the substrate; a diffuser unit which distributes the second raw material to the plurality of second nozzle parts; and a supply unit which supplies the second raw material to the diffuser unit.
    Type: Application
    Filed: February 8, 2019
    Publication date: June 6, 2019
    Inventors: Jin-Kwang Kim, Seung-Yong Song, Myung-Soo Huh, Suk-Won Jung, Choel-Min Jang, Jae-Hyun Kim, Sung-Chul Kim
  • Patent number: 10266941
    Abstract: A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: April 23, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yong-Suk Lee, Myung-Soo Huh, Suk-Won Jung, Jeong-Ho Yi, Mi-Ra An
  • Publication number: 20190115409
    Abstract: A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.
    Type: Application
    Filed: September 14, 2018
    Publication date: April 18, 2019
    Inventors: Myung Soo HUH, Dong Kyun KO, Sung Chul KIM, Woo Jin KIM, Cheol Lae ROH, Keun Hee PARK
  • Patent number: 10214808
    Abstract: A deposition apparatus for performing a deposition process by using a mask with respect to a substrate, the deposition apparatus includes a chamber, a support unit in the chamber, the support unit including first holes and being configured to support the substrate, a supply unit configured to supply at least one deposition raw material toward the substrate, and movable alignment units through the first holes of the support unit, the alignment units being configured to support the mask and to align the mask with respect to the substrate.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: February 26, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Myung-Soo Huh, Suk-Won Jung, Jeong-Ho Yi, Sang-Hyuk Hong, Yong-Suk Lee
  • Patent number: 10202683
    Abstract: A thin film encapsulation layer manufacturing apparatus is provided that may include a transfer chamber, a sputtering chamber, a monomer deposition chamber, a chemical vapor deposition (CVD) chamber, and an atomic layer deposition (ALD) chamber. The transfer chamber may be connected to each of the other chambers, and may be configured to align a substrate. Each of the other chambers may be configured to receive from and transfer to the transfer chamber a substrate. The sputtering chamber may be configured to form a first inorganic layer on the substrate by a sputtering process. The monomer deposition chamber may be configured to deposit a first organic layer on the first inorganic layer. The CVD chamber may be configured to form a second inorganic layer on the first organic layer. The ALD chamber may be configured to form a third inorganic layer on the second inorganic layer.
    Type: Grant
    Filed: June 5, 2014
    Date of Patent: February 12, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Yong-Suk Lee, Min-Sung Seo, Myung-Soo Huh, Mi-Ra An
  • Publication number: 20180342708
    Abstract: A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.
    Type: Application
    Filed: July 26, 2018
    Publication date: November 29, 2018
    Inventors: Myung-Soo HUH, Suk-Won JUNG, Jin-Kwang KIM, In-Kyo KIM, Choel-Min JANG
  • Publication number: 20180305809
    Abstract: A deposition apparatus configured to perform a deposition process on a substrate, the deposition apparatus including a chamber having an exhaust opening in a surface, a deposition source in the chamber configured to eject one or more deposition materials toward the substrate, a cooling plate corresponding to an inner surface of the chamber, at which the exhaust opening is formed, a refrigerator contacting the cooling plate, and a pump coupled to the exhaust opening.
    Type: Application
    Filed: June 29, 2018
    Publication date: October 25, 2018
    Inventors: Sun-Ho Kim, Myung-Soo Huh, Jeong-Ho Yi, Cheol-Rae Jo, Hyun-Woo Joo, Yong-Suk Lee
  • Patent number: 10081862
    Abstract: A deposition apparatus configured to perform a deposition process on a substrate, the deposition apparatus including a chamber having an exhaust opening in a surface, a deposition source in the chamber configured to eject one or more deposition materials toward the substrate, a cooling plate corresponding to an inner surface of the chamber, at which the exhaust opening is formed, a refrigerator contacting the cooling plate, and a pump coupled to the exhaust opening.
    Type: Grant
    Filed: August 28, 2013
    Date of Patent: September 25, 2018
    Assignee: Samsung Dispaly Co., Ltd.
    Inventors: Sun-Ho Kim, Myung-Soo Huh, Jeong-Ho Yi, Cheol-Rae Jo, Hyun-Woo Joo, Yong-Suk Lee
  • Patent number: 10038169
    Abstract: A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.
    Type: Grant
    Filed: September 8, 2013
    Date of Patent: July 31, 2018
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Myung-Soo Huh, Suk-Won Jung, Jin-Kwang Kim, In-Kyo Kim, Choel-Min Jang
  • Patent number: 9932672
    Abstract: A vapor deposition apparatus includes a stage on which a substrate is mounted; a heater unit that is disposed at a side of the stage and includes a first heater and a second heater, wherein the first heater and the second heater are movable so that the first heater and the second heater are spaced apart from each other or are disposed adjacent to each other; and a nozzle unit that is disposed at a side opposite to the side at which the heater unit is disposed about the stage and includes one or more nozzles.
    Type: Grant
    Filed: January 6, 2015
    Date of Patent: April 3, 2018
    Assignee: Samsung Display Co., Ltd.
    Inventors: Choel-Min Jang, Myung-Soo Huh, Jeong-Ho Yi, Cheol-Rae Jo, Sang-Joon Seo, Seung-Hun Kim, Jin-Kwang Kim
  • Patent number: 9890454
    Abstract: An atomic layer deposition apparatus includes: a substrate support supporting a substrate; a first divider including a plurality of first division modules provided on the substrate support and selectively spraying a source gas, a reaction gas, and a purge gas to each of predetermined areas; and a second divider including a plurality of second division modules provided on the first divider and supplying the gases to the respective first division modules, wherein each of the plurality of second division modules is formed of a first through-hole and a second through-hole, and the gas passed through the first and second through-holes moves to the first division modules.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: February 13, 2018
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Choel Min Jang, Suk Won Jung, Myung Soo Huh
  • Patent number: 9853192
    Abstract: An apparatus and method for manufacturing a thin film encapsulation includes: a first cluster configured to form a first inorganic layer on a display substrate using a sputtering process; a second cluster configured to form a first organic layer on the first inorganic layer on the display substrate using a monomer deposition process; and a third cluster configured to form a second inorganic layer on the first organic layer on the display substrate using a chemical vapor deposition (CVD) process or a plasma enhanced chemical vapor deposition (PECVD) process.
    Type: Grant
    Filed: August 22, 2013
    Date of Patent: December 26, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Myung-Soo Huh, Jeong-Ho Yi, Yong-Suk Lee