Abstract: The present invention relates to a method for determining the DNA quality of a biological sample and, more specifically, to a method for determining the DNA quality of a biological sample by performing a quantitative polymerase chain reaction (PCR) using primers capable of amplifying a target gene, a method for preparing the primers used in the method, and a method for standardizing the amount of detected target gene mutation by using the determined DNA quality. The method of the present invention enables objective evaluation of the DNA quality of a biological sample used in gene analysis and the presentation of objective results on the expression ratio of a gene mutation, thereby providing reliable information in the fields of clinical research and companion diagnosis.

Abstract: Disclosed are a helium gas liquefier and a method for liquefying a helium gas. The disclosed helium gas liquefier includes: a first cooling part including a first cooling column; a first cold head installed on the first cooling column, and a first cylinder in which the first cooling column and the first cold head are built; a second cooling part including a second cooling column, a second cold head installed on the second cooling column, and a second cylinder in which the second cooling column and the second cold head are built; and a liquid helium storage disposed under the second cooling part.

Abstract: A method of preparing a carboxylic acid-modified nitrile-based copolymer latex is provided. The method of preparing a carboxylic acid-modified nitrile-based copolymer later includes emulsion-polymerizing a monomer mixture including a conjugated diene-based monomer, an ethylenically unsaturated nitrile-based monomer, and an ethylenically unsaturated acid monomer in the presence of a cross-linking agent including glyoxal.

Abstract: A display device includes a sub-pixel connected to a scan write line, a first data line, and a second data line. The sub-pixel includes a light emitting element, a first pixel driving unit configured to generate a control current according to a first data voltage of the first data line, a second pixel driving unit configured to generate a driving current applied to the light emitting element according to a second data voltage of the second data line, and a third pixel driving unit configured to apply the driving current to the light emitting element according to the control current of the first pixel driving unit. The first pixel driving unit includes a first transistor to generate the control current according to the first data voltage, a second transistor configured to apply the first data voltage of the first data line to a first electrode of the first transistor.

Abstract: The present invention provides a pharmaceutical composition for prevention or treatment of a stress disease and depression, the pharmaceutical composition be safely useable without toxicity and side effects by using an extract of leaves of Vaccinium bracteatum Thunb., which is natural resource of Korea, so that the reduction of manufacturing and production costs and the import substitution and export effects can be expected through the replacement of a raw material for preparation with a plant inhabiting in nature.

Abstract: Disclosed are a DRAM device capable of storing charges for a long time and an operating method thereof. According to an embodiment, a DRAM device includes a channel region formed on a substrate, a gate insulating film region formed on the channel region, a floating gate region formed on the gate insulating film region, a transition layer region formed on the floating gate region, and a control gate region formed on the transition layer region and generating a potential difference with the floating gate region in response to a fact that a potential that is not less than a reference potential is applied and releasing at least one charge stored in the floating gate region or storing the at least one charge into the floating gate region, by generating a transition current due to the potential difference.

Abstract: A steep-slope field-effect transistor and a fabrication method thereof are disclosed. The steep-slope field-effect transistor according to an embodiment of the inventive concept includes a source, a channel region, and a drain formed on a substrate; a gate insulating film formed on an upper portion of the channel region; a floating gate formed on an upper portion of the gate insulating film; a transition layer formed on an upper portion of the floating gate; and a control gate formed on an upper portion of the transition layer. The steep-slope field-effect transistor applies a reference potential or more to the control gate to discharge or bring in at least one charge stored in the floating gate.

Abstract: Disclosed are a DRAM device capable of storing charges for a long time and an operating method thereof. According to an embodiment, a DRAM device includes a channel region formed on a substrate, a gate insulating film region formed on the channel region, a floating gate region formed on the gate insulating film region, a transition layer region formed on the floating gate region, and a control gate region formed on the transition layer region and generating a potential difference with the floating gate region in response to a fact that a potential that is not less than a reference potential is applied and releasing at least one charge stored in the floating gate region or storing the at least one charge into the floating gate region, by generating a transition current due to the potential difference.

Abstract: Disclosed are a neuromorphic synapse device having an excellent linearity characteristic, and an operating method thereof. According to an embodiment, a neuromorphic synapse device includes a channel region formed on a substrate, a gate insulating film region formed on the channel region, a floating gate region formed on the gate insulating film region, a charge transfer layer region formed on the floating gate region, and a control gate region, which is formed on the charge transfer layer region and which generates a potential difference with the floating gate region in response to a fact that a potential that is not less than a reference potential is applied, and performs a weight update operation by releasing at least one charge stored in the floating gate region or storing the at least one charge into the floating gate region by using the potential difference.

Abstract: A steep-slope field-effect transistor and a fabrication method thereof are disclosed. The steep-slope field-effect transistor according to an embodiment of the inventive concept includes a source, a channel region, and a drain formed on a substrate; a gate insulating film formed on an upper portion of the channel region; a floating gate formed on an upper portion of the gate insulating film; a transition layer formed on an upper portion of the floating gate; and a control gate formed on an upper portion of the transition layer. The steep-slope field-effect transistor applies a reference potential or more to the control gate to discharge or bring in at least one charge stored in the floating gate.

Abstract: Disclosed are a helium gas liquefier and a method for liquefying a helium gas. The disclosed helium gas liquefier includes: a first cooling part including a first cooling column; a first cold head installed on the first cooling column, and a first cylinder in which the first cooling column and the first cold head are built; a second cooling part including a second cooling column, a second cold head installed on the second cooling column, and a second cylinder in which the second cooling column and the second cold head are built; and a liquid helium storage disposed under the second cooling part.

Abstract: Disclosed is an adiabatic collector for recycling gas, a liquefier for recycling gas, and a recovery apparatus for recycling gas using the same. More specifically, gas to be recycled is collected in an adiabatic manner, cooled to a temperature lower than the dew point thereof, and stored in the liquid state through a phase change, thereby saving energy required for re-cooling the gas. Particularly, the present invention relates to an adiabatic collector for recycling gas, a liquefier for recycling gas, and a recovery apparatus for recycling gas using the same, in which recycling gas is compressed through a natural inducement method using a difference in temperature and pressure while being collected and liquefied, thereby reducing noise, vibration, and size of the collector.

Abstract: A method of operating a semiconductor memory device includes applying a program pulse at least once to each of a plurality of pages; performing a pre-read operation on a reference page among the plurality of pages through an initial test voltage; repeating the pre-read operation by controlling the initial test voltage until a result of the pre-read operation is a pass; setting the initial test voltage of when the result of the pre-read operation is the pass as a reference test voltage; and detecting a defective page among the plurality of pages by performing read operations on the plurality of pages through the reference test voltage.

Abstract: A method of operating a semiconductor memory device includes applying a program pulse at least once to each of a plurality of pages; performing a pre-read operation on a reference page among the plurality of pages through an initial test voltage; repeating the pre-read operation by controlling the initial test voltage until a result of the pre-read operation is a pass; setting the initial test voltage of when the result of the pre-read operation is the pass as a reference test voltage; and detecting a defective page among the plurality of pages by performing read operations on the plurality of pages through the reference test voltage.

Abstract: A method of operating a semiconductor memory device includes applying a program pulse at least once to each of a plurality of pages; performing a pre-read operation on a reference page among the plurality of pages through an initial test voltage; repeating the pre-read operation by controlling the initial test voltage until a result of the pre-read operation is a pass; setting the initial test voltage of when the result of the pre-read operation is the pass as a reference test voltage; and detecting a defective page among the plurality of pages by performing read operations on the plurality of pages through the reference test voltage.

Abstract: A method of operating a semiconductor memory device includes performing a first program operation to simultaneously increase threshold voltages of memory cells having different target levels to sub-levels lower than the different target levels, verifying the memory cells by using different verify voltages, respectively, performing a second program operation to divide the threshold voltages of the memory cells, and performing a third program operation to increase the threshold voltages of the memory cells to the different target levels, respectively.

Abstract: The present invention relates to pegylated 7-dehydrocholesterol derivatives, and a composition for wrinkle alleviation and anti-aging comprising the same. The pegylated 7-dehydrocholesterol derivatives according to the present invention have improved stability and solubility in water, and thus can be effectively used as a good source for supplying vitamin D in a cosmetic composition, a pharmaceutical composition and a functional food for wrinkle alleviation and anti-aging.

Abstract: An organic light emitting device includes a pixel electrode, a hole auxiliary layer formed on the pixel electrode, an organic emission layer formed on the hole auxiliary layer, an electron auxiliary layer formed on the organic emission layer, and a common electrode layer formed on the electron auxiliary layer. An electric field dependency of electron mobility is increased by increasing an energetic disorder or decreasing a positional disorder for the organic emission layer.

Abstract: A method of operating a semiconductor memory device includes performing a first program operation to simultaneously increase threshold voltages of memory cells having different target levels to sub-levels lower than the different target levels, verifying the memory cells by using different verify voltages, respectively, performing a second program operation to divide the threshold voltages of the memory cells, and performing a third program operation to increase the threshold voltages of the memory cells to the different target levels, respectively.

Abstract: A method of operating a semiconductor memory device includes applying a program pulse at least once to each of a plurality of pages; performing a pre-read operation on a reference page among the plurality of pages through an initial test voltage; repeating the pre-read operation by controlling the initial test voltage until a result of the pre-read operation is a pass; setting the initial test voltage of when the result of the pre-read operation is the pass as a reference test voltage; and detecting a defective page among the plurality of pages by performing read operations on the plurality of pages through the reference test voltage.