Abstract: A method of operating a semiconductor memory device includes applying a program pulse at least once to each of a plurality of pages; performing a pre-read operation on a reference page among the plurality of pages through an initial test voltage; repeating the pre-read operation by controlling the initial test voltage until a result of the pre-read operation is a pass; setting the initial test voltage of when the result of the pre-read operation is the pass as a reference test voltage; and detecting a defective page among the plurality of pages by performing read operations on the plurality of pages through the reference test voltage.

Abstract: Disclosed is an adiabatic collector for recycling gas, a liquefier for recycling gas, and a recovery apparatus for recycling gas using the same. More specifically, gas to be recycled is collected in an adiabatic manner, cooled to a temperature lower than the dew point thereof, and stored in the liquid state through a phase change, thereby saving energy required for re-cooling the gas. Particularly, the present invention relates to an adiabatic collector for recycling gas, a liquefier for recycling gas, and a recovery apparatus for recycling gas using the same, in which recycling gas is compressed through a natural inducement method using a difference in temperature and pressure while being collected and liquefied, thereby reducing noise, vibration, and size of the collector.

Abstract: A coaxial drive apparatus for multidirectional control, including: a housing; a stage pivotally installed in the housing, with the object laid on the stage; a rotary shaft connected to the stage and rotated to cause the stage to pivot; a rotation transmitting unit transmitting a rotating force of the rotary shaft to the stage; a sliding pipe coaxially fitted over the rotary shaft so as to be moved along a lengthwise direction of the rotary shaft or to be rotated on a central axis of the rotary shaft; a moving unit moving the object laid on the stage in the lengthwise direction of the rotary shaft according to a movement of the sliding pipe, and moving the object in a transverse direction of the rotary shaft according to a rotation of the sliding pipe; and a controller providing a driving force to the rotary shaft and to the sliding pipe.

Abstract: Disclosed are a memory system, a semiconductor memory device and a method of operating the same. The memory system includes: a memory controller to output a command, address and data; and a semiconductor memory device to store at least one page data in each memory cell in response to the command, the address and the data, the memory controller to separately output first address used for determining the at least one page data from the data and second address used for determining a word line coupled to at least one memory cell.

Abstract: A method of operating a semiconductor memory device includes performing a first program operation to simultaneously increase threshold voltages of memory cells having different target levels to sub-levels lower than the different target levels, verifying the memory cells by using different verify voltages, respectively, performing a second program operation to divide the threshold voltages of the memory cells, and performing a third program operation to increase the threshold voltages of the memory cells to the different target levels, respectively.

Abstract: An organic light emitting device includes a pixel electrode, a hole auxiliary layer formed on the pixel electrode, an organic emission layer formed on the hole auxiliary layer, an electron auxiliary layer formed on the organic emission layer, and a common electrode layer formed on the electron auxiliary layer. An electric field dependency of electron mobility is increased by increasing an energetic disorder or decreasing a positional disorder for the organic emission layer.

Abstract: A semiconductor device comprises a memory cell array comprising memory cells coupled to word lines and bit lines, a voltage generator suitable for generating a drive voltage to be applied to a selected word line, and a control logic suitable for detecting the number of pulses of a program voltage received from the memory cell array in a program operation, storing bias information corresponding to the detected number of pulses in a register, and controlling a level of the program voltage for a subsequent program operation based on the bias information.

Abstract: A coaxial drive apparatus for multidirectional control, including: a housing; a stage pivotally installed in the housing, with the object laid on the stage; a rotary shaft connected to the stage and rotated to cause the stage to pivot; a rotation transmitting unit transmitting a rotating force of the rotary shaft to the stage; a sliding pipe coaxially fitted over the rotary shaft so as to be moved along a lengthwise direction of the rotary shaft or to be rotated on a central axis of the rotary shaft; a moving unit moving the object laid on the stage in the lengthwise direction of the rotary shaft according to a movement of the sliding pipe, and moving the object in a transverse direction of the rotary shaft according to a rotation of the sliding pipe; and a controller providing a driving force to the rotary shaft and to the sliding pipe.

Abstract: A method of operating a semiconductor device includes storing a supplying condition of a read voltage inputted from an external source into an internal register to perform a read operation of memory cells, performing the read operation repetitively with changing levels of the read voltage according to the supplying condition of the read voltage in the event that the number of error bits in a data read from the memory cells exceeds an allowable range, and storing an iteration number of the read operation in the internal register in case the number of the error bits falls within the allowable range.

Abstract: A semiconductor device comprises a memory cell array comprising memory cells coupled to word lines and bit lines, a voltage generator suitable for generating a drive voltage to be applied to a selected word line, and a control logic suitable for detecting the number of pulses of a program voltage received from the memory cell array in a program operation, storing bias information corresponding to the detected number of pulses in a register, and controlling a level of the program voltage for a subsequent program operation based on the bias information.

Abstract: Disclosed are a memory system, a semiconductor memory device and a method of operating the same. The memory system includes: a memory controller to output a command, address and data; and a semiconductor memory device to store at least one page data in each memory cell in response to the command, the address and the data, the memory controller to separately output first address used for determining the at least one page data from the data and second address used for determining a word line coupled to at least one memory cell.

Abstract: A method of operating a semiconductor device includes storing a supplying condition of a read voltage inputted from an external source into an internal register to perform a read operation of memory cells, performing the read operation repetitively with changing levels of the read voltage according to the supplying condition of the read voltage in the event that the number of error bits in a data read from the memory cells exceeds an allowable range, and storing an iteration number of the read operation in the internal register in case the number of the error bits falls within the allowable range.

Abstract: A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.

Abstract: A semiconductor integrated circuit includes a memory cell area comprising a main cell and a spare cell, and a memory controller configured to set an offset value using a program verify level which is set during a program operation, and set a read level using the offset value during a read operation.

Abstract: A method of manufacturing a solar cell includes preparing a base substrate having a first conductive type; diffusing an impurity having a second conductive type (opposite the first conductive type) into the base substrate to form an emitter layer having a first impurity concentration on the base substrate and a by-product layer on the emitter layer; irradiating a laser beam onto the emitter layer corresponding to a first region of the base substrate to form a front contact portion having a second impurity concentration higher than the first impurity concentration; irradiating the laser beam onto the by-product layer to remove the by-product layer corresponding to the first region; removing the by-product layer from an area outside of the first region; forming an anti-reflection layer on the base substrate; forming a front electrode on the anti-reflection layer corresponding to the first region; and forming a back electrode on the base substrate.

Abstract: A semiconductor integrated circuit includes a memory cell area comprising a main cell and a spare cell, and a memory controller configured to set an offset value using a program verify level which is set during a program operation, and set a read level using the offset value during a read operation.

Abstract: A nonvolatile memory device includes first and second registers configured to store parameters received via an input/output (IO) unit, a microcontroller configured to control an operation of the nonvolatile memory device according to the parameter stored in the first register, and a control logic unit configured to, when a parameter is received via the IO unit while the microcontroller performs an internal operation, store the received parameter in the second register.

Abstract: A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.

Abstract: In a method of manufacturing a solar cell, an emitter layer is formed on a front surface of a substrate, a rear surface protective layer is formed on the emitter layer, and a plurality of recesses is formed in the rear surface protective layer. Then, a front electrode is formed on the emitter layer, and a rear surface electrode layer is formed on the rear surface protective layer. A substrate is heated to form a rear surface electric field layer. Since a portion of the rear surface protective layer is removed when the recesses are formed, the substrate may be prevented from being damaged, and thus photoelectric conversion efficiency of the solar cell may be improved.

Abstract: A Code Address Memory (CAM) cell circuit of a nonvolatile memory device includes a CAM cell unit configured to store data, a control circuit unit configured to read data stored in the CAM cell unit and to output data read as read data, and register units each configured to comprise a number of registers for storing the read data. Each of the registers is reset such that first data are latched when a reset operation is performed, and is configured to maintain the first data or newly latch second data in response to the read data.