Abstract: The present disclosure relates to an etching composition for a silicon nitride layer, and the etching composition for a silicon nitride layer has a significantly excellent etching selectivity for a silicon nitride layer as compared to a silicon oxide layer, prevent abnormal growth of the silicon oxide layer, suppresses particle generation affecting characteristics of a semiconductor device, and has an excellent effect of a significantly small generation height of bubbles.

Abstract: An organic light emitting display device and a driving method thereof are disclosed. The display device has sub-pixels of multiple colors. In one aspect, the organic light emitting display device detects sub-pixels which are positioned at the edges of the panel. Data for the sub-pixels on the edges are reduced so that colors on the edges are less observable.

Abstract: An organic light emitting display device and a driving method thereof are disclosed. The display device has sub-pixels of multiple colors. In one aspect, the organic light emitting display device detects sub-pixels which are positioned at the edges of the panel. Data for the sub-pixels on the edges are reduced so that colors on the edges are less observable.

Abstract: Provided is an etchant composition for a semiconductor substrate which may selectively etch a high-concentration doped layer of an extrinsic semiconductor, and according to the present disclosure, an etchant composition for a semiconductor substrate which, in etching an extrinsic semiconductor substrate including doped layers having different doping concentrations, may etch the high-concentration doped layer at a high selection ratio, and suppress bubble formation during an etching process to allow uniform and stable etching, an etching method using the same, and a manufacturing method of a semiconductor substrate may be provided.

Abstract: The present inventive concept relates to a composite element, which includes a stacked body in which a plurality of sheets are stacked, a plurality of first noise filter portions capable of generating a first resonance frequency and provided in the stacked body, each first noise filter portion including one or more coil patterns, a second noise filter portion capable of generating a second resonance frequency higher than the first resonance frequency, provided in the stacked body, and including a capacitor and an inductor, a plurality of external electrodes provided outside the stacked body and connected to the plurality of first noise filter portions and a part of the second noise filter portion, and a ground electrode provided outside the stacked body and connected to a part of the second noise filter portion, and can expand the band of frequencies at which noise can be removed and adjust the resonant frequency for removing noise.

Abstract: An image processing apparatus includes a discrete wavelet transform (DWT) device that performs DWT and down sampling for a first source image to divide the first source into a low-frequency sub-image including a low-frequency component in a horizontal direction and a vertical direction and a plurality of high-frequency sub-images including a high-frequency component in at least one of the horizontal direction or the vertical direction, a frame memory storing a low-frequency sub-image of a second source image, a first noise reduction device that reduces noise in the low-frequency sub-image of the first source image using the low-frequency sub-image of the second source image, and an inverse discrete wavelet transform (IDWT) device that applies IDWT to the low-frequency sub-image of the first sub-image, which is reduced in noise through the first noise reduction device, and the high-frequency sub-images of the first image to restore the first source image.

Abstract: Silicon etching compositions are described and may be used for selectively etching silicon with respect to a silicon insulating film. In particular, the silicon etching compositions can be used to improve the selective etching ratio of silicon from the surface of a semiconductor on which a silicone oxide film and silicon are exposed.

Abstract: Silicon etching compositions are described and may be used for selectively etching silicon with respect to a silicon insulating film. In particular, the silicon etching compositions can be used to improve the selective etching ratio of silicon from the surface of a semiconductor on which a silicone oxide film and silicon are exposed.

Abstract: The present disclosure provides an etching composition for a metal nitride layer and an etching method of a metal nitride layer using the same, and more particularly, to an etching composition for a metal nitride layer selectively etching the metal nitride layer, an etching method of a metal nitride layer using the etching composition, and a method of manufacturing a microelectronic device, the method including an etching process performed using the etching composition.

Abstract: Provided is a laminated device. The laminated device includes: a laminate body where a plurality of sheets are laminated; a plurality of noise filter parts provided in the laminate body and each having at least one coil pattern; and a plurality of external electrodes provided outside the laminate body and connected to the plurality of noise filter parts, respectively. At least one of the plurality of noise filter parts has the number of coil patterns different from that of the rest.

Abstract: Provided is an etchant composition for a silicon layer including: a fluoride-based compound; a nitrate-based compound; an acid mixture including a phosphoric acid-based inorganic acid and an organic acid; and a nitrosyl compound and capable of selectively etching the silicon layer with respect to a silicon oxide layer.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: The present invention relates to a composition for selectively etching silicon on a surface on which a silicon oxide film (SiO2) and silicon (Si) are exposed. According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: A cleaning composition for removing post-etch or post-ash residues from a semiconductor substrate, and a cleaning method using the same are disclosed. The cleaning composition can comprise water; a fluorine compound; an alkanolamine compound; and a corrosion inhibitor. The corrosion inhibitor is a mixture of a first corrosion inhibitor and a second corrosion inhibitor. When using the cleaning composition, it is possible to efficiently remove the residues of various aspects existing on a surface of the substrate or the semiconductor device without damage to a substrate or a semiconductor device including various metal layers, insulating layers, etc. Accordingly, when a highly integrated and miniaturized semiconductor device is manufactured, it may be advantageously applied to the removal of residues generated on the surface of the substrate or the semiconductor device.

Abstract: A display device comprises a pad terminal area and a first circuit board attached to the pad terminal area. The pad terminal area comprises a first pad terminal area having a first pad terminal row of first pad terminals and a second pad terminal area having a second pad terminal row of second pad terminals. The first circuit board comprises a first film having a first lead terminal row of first lead terminals and a second film having a second lead terminal row of second lead terminals. The first lead terminals are connected to the first pad terminals, the second lead terminals are connected to the second pad terminals, an end of the second film protrudes outward from an end of the first film, and the second pad terminal area overlaps an area between the end of the first film and the end of the second film.

Abstract: The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed. According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.

Abstract: An image processing apparatus includes a discrete wavelet transform (DWT) device that performs DWT and down sampling for a first source image to divide the first source into a low-frequency sub-image including a low-frequency component in a horizontal direction and a vertical direction and a plurality of high-frequency sub-images including a high-frequency component in at least one of the horizontal direction or the vertical direction, a frame memory storing a low-frequency sub-image of a second source image, a first noise reduction device that reduces noise in the low-frequency sub-image of the first source image using the low-frequency sub-image of the second source image, and an inverse discrete wavelet transform (IDWT) device that applies IDWT to the low-frequency sub-image of the first sub-image, which is reduced in noise through the first noise reduction device, and the high-frequency sub-images of the first image to restore the first source image.

Abstract: A power voltage generator includes a booster, a voltage sensor, a constant voltage controller and a constant current controller. The booster is configured to boost an input voltage to an output voltage based on an on-off operation of a switch. The voltage sensor is configured to generate a sensing voltage by sensing the output voltage. The constant voltage controller is configured to generate a first switching signal to control the switch by comparing the sensing voltage with a reference voltage. The constant current controller is configured to generate a gain based on a ratio of an electrode signal of the switch and a target signal by comparing the electrode signal of the switch with the target signal.

Abstract: The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed. According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.