Abstract: An organic thin film transistor and a method for fabricating the same are disclosed. The method for fabricating the organic thin film transistor includes forming a gate electrode on a substrate. A gate insulating layer is formed on an entire surface of the substrate including the gate electrode, and source and drain electrodes are formed at a predetermined interval from each other on the gate insulating layer. An organic semiconductor layer is formed on the entire surface of the substrate and a first protection layer is formed on the organic semiconductor layer. The first protection layer is patterned and the organic semiconductor layer etched using the remaining first protection layer as a mask. A second protection layer is then formed on the entire surface of the substrate.

Abstract: An in plane switching (IPS) mode liquid crystal display (LCD) panel is fabricated with a reduced number of mask processes and includes a thin film transistor (TFT) array substrate with a TFT provided at a crossing of gate and data lines, a protective film protecting the TFT, a pixel electrode connected to the TFT, a common line substantially parallel to the pixel electrode, a common electrode connected to the common line to generate a horizontal electric field with the pixel electrode, and a pad including a transparent conductive material and connected to the gate line, the data line and/or the common line. A color filter array substrate is joined to, and overlaps a portion of, the TFT array substrate. Portions of the protective film where the color filter array substrate which do not overlap the TFT array substrate are removed to expose the transparent conductive material included in the pad.

Abstract: An array substrate for a liquid crystal display device includes: a data line on a substrate; a source electrode contacting the data line, a drain electrode spaced apart from the source electrode and a pixel electrode connected to the drain electrode, wherein the source electrode, the drain electrode and the pixel electrode each including a transparent conductive material; an organic semiconductor layer contacting the source and drain electrodes; a gate insulating layer on the organic semiconductor layer; a gate electrode on the gate insulating layer; a first passivation layer on the gate electrode, the first passivation layer having a gate contact hole exposing the gate electrode; and a gate line on the first passivation layer, the gate line connected to the gate electrode through the gate contact hole.

Abstract: An array substrate for a liquid crystal display device includes a first source electrode and a first drain electrode on a substrate, wherein the first source electrode and the first drain electrode are separated from each other and formed of a metallic material, a second source electrode and a second drain electrode on the first source electrode and the first drain electrode, respectively, and are formed of a transparent conductive material, wherein the second source electrode covers an upper surface of the first source electrode, and the second drain electrode covers an upper surface of the first drain electrode, a pixel electrode on the substrate and contacting the second drain electrode on the substrate, an organic semiconductor layer on the substrate, a gate insulating layer on the organic semiconductor layer, and a gate electrode on the gate insulating layer.

Abstract: A method of fabricating a liquid crystal display device includes forming a gate line, a gate pad, and a gate electrode on a first substrate, forming a gate insulating layer on the gate line, the gate electrode, and the gate pad, forming an active layer on the gate insulating layer, forming an ohmic contact layer on the active layer, forming a data line, a data pad, and source and drain electrodes on the ohmic contact layer, forming a pixel electrode contacting the drain electrode, forming a passivation layer on the substrate including the pixel electrode, forming a common electrode on a second substrate, attaching the first and second substrates such that the pixel electrode and the common electrode are facing into each other, injecting a liquid crystal material between the first and second substrates, and exposing the gate pad and the data pad without forming contact holes.

Abstract: An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode.

Abstract: An array substrate for a liquid crystal display device comprises a data line disposed on a substrate that has a pixel region, and source and drain electrodes disposed on the substrate. The source electrode extends from the data line and is separated from the drain electrode. The array substrate for a liquid crystal display device further comprises a pixel electrode disposed in the pixel region, the pixel electrode contacting the drain electrode, an organic semiconductor layer disposed on the substrate, a gate insulating layer disposed on the substrate, and a gate electrode of a first metallic material disposed on the substrate. The array substrate for a liquid crystal display device also comprises a first passivation layer of a photosensitive organic insulating material that has a gate contact hole on the gate electrode, the gate contact hole exposing the gate electrode, and a gate line of a second metallic material disposed on the first passivation layer.

Abstract: Provided are an organic semiconductor structure and a method of manufacturing the same, an organic thin film transistor (OTFT) using the organic semiconductor structure and a method of manufacturing the OTFT, and a display apparatus using the same.

Abstract: Disclosed is a display device including a thin film transistor. A method for forming the display device includes forming an organic semiconductor pattern in the presence of a magnetic field or an electric field. Due to the presence of a magnetic field or an electric field, the molecules of the organic semiconductor layer of the thin film transistor are substantially aligned in a predetermined direction.

Abstract: A method of manufacturing an array substrate for a liquid crystal display device which includes forming a gate electrode, a gate line, and a gate pad on a substrate by sequentially depositing a metal layer and a transparent conductive layer and patterning, forming a gate insulating layer on the gate electrode, the gate line, and the gate pad, forming an active layer on the gate insulating layer over the gate electrode, forming an ohmic contact layer on the active layer, forming source and drain electrodes, a data line and a data pad on the ohmic contact layer, forming a pixel electrode, forming a data pad terminal covering the data pad, forming a passivation layer on the pixel electrode and the data pad terminal, exposing the gate pad by etching the passivation layer and the gate insulating layer, and exposing the data pad terminal by etching the passivation layer.

Abstract: A jig for a flexible substrate comprises a glass plate having a concave portion and a plurality of grooves at periphery of the concave portion. The jig further comprises a plurality of fixing elements inserted in the plurality of grooves to fix the flexible substrate to the glass plate.

Abstract: Provided is a thin film transistor including a gate electrode on a substrate; a gate insulating layer on the gate electrode; source and drain electrodes including first source and drain layers on the gate insulating layer, respectively, and spaced apart from each other, wherein at lease one of the first source and drain layers includes indium-tin-oxide doped with at least one Group III element; and an organic semiconductor layer on the gate insulating layer and contacting the first source and drain layers.

Abstract: A liquid crystal display device includes an upper substrate, a lower substrate, a liquid crystal layer between the upper and lower substrates, a transparent electrode consisting of at least two layers of transparent material provided on at least one of the upper and lower substrates and a spacer material jetted onto the transparent electrode by an ink-jet system, wherein the spacer material has a hydrostatic property different from one of the at least two layers of the transparent electrode.

Abstract: An array substrate having double-layered metal patterns for use in a liquid crystal display device and a manufacturing method thereof are disclosed in the present invention.

Abstract: An array substrate having double-layered metal patterns for use in a liquid crystal display device and a manufacturing method thereof are disclosed in the present invention.

Abstract: A liquid crystal display structure is provided. The liquid crystal display structure includes a pixel region and a thin film transistor on the substrate. The thin film transistor is adjacent to the pixel region and includes a gate electrode; a gate insulating layer having a top surface; a source electrode and a drain electrode at the top surface of the gate insulating layer; a semiconductor layer disposed at the top surface of the gate insulating layer, the semiconductor layer between the source electrode and the drain electrode defining a channel region, the semiconductor layer including a small molecule organic semiconductor material; and a first passivation layer covering the channel region, a top surface of the first passivation layer coinciding with or being below a top surface of each of the source electrode and the drain electrode.

Abstract: An organic thin film transistor includes a gate electrode having a first thickness on a substrate; an organic insulating layer on the gate electrode and the substrate, a portion of the organic insulating layer on the substrate having a second thickness, and a portion of the organic insulating layer on the gate electrode having a third thickness of about 2000 ? to 5000 ?; a semiconductor layer on the organic insulating layer; and source and drain electrodes on the organic insulating layer and contacting both side portions of the semiconductor layer.

Abstract: A method for fabricating an organic thin film transistor includes forming a gate electrode on a substrate, forming a gate insulating layer on the substrate including the gate electrode, forming an organic active pattern on the gate insulating layer using a rear exposing process, and forming source and drain electrodes on the organic active pattern.

Abstract: A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate electrode, a gate line, and a gate pad on a substrate, forming a gate insulating layer on the gate electrode, the gate line, and the gate pad, forming an active layer on the gate insulating layer, forming an ohmic contact layer on the active layer, forming source and drain electrodes, a data line and a data pad on the ohmic contact layer, forming a pixel electrode, forming a gate pad terminal on the gate insulating layer, forming a data pad terminal covering the data pad, forming a passivation layer on the pixel electrode, the gate pad terminal and the data pad terminal, exposing the gate pad terminal and the gate pad by etching the passivation layer and the gate insulating layer, and exposing the data pad terminal by etching the passivation layer.

Abstract: A method for manufacturing an array substrate for a display device, includes forming a gate electrode, a gate line, and a gate pad on a substrate, disposing a first metal mask on the gate pad, forming a gate insulating layer, an amorphous silicon layer, a doped silicon layer, and a metal layer on the substrate, removing the first metal mask, patterning the metal layer, the doped silicon layer, and the amorphous silicon layer to form source and drain electrodes, a data line, a data pad, an ohmic contact layer, and an active layer, forming a pixel electrode, forming a gate pad terminal and a data pad terminal covering the gate pad and the data pad, respectively, disposing second and third metal masks on the gate pad and data pad terminals, respectively, forming a passivation layer on the substrate, and removing the second and the third masks.