Abstract: Memory subsystem refresh management enables commands to access one or more identified banks across different bank groups with a single command. Instead of sending commands identifying a bank or banks in separate bank groups by each bank group individually, the command can cause the memory device to access banks in different bank groups. The command can be a refresh command. The command can be a precharge command.

Abstract: A memory subsystem includes a multi-device package including multiple memory devices organized as multiple ranks of memory. A control unit for the memory subsystem sends a memory access command concurrently to some or all of the ranks of memory, and triggers some of all of the memory ranks that receive the memory access command to change on-die termination (ODT) settings. One of the ranks is selected to execute the memory access command, and executes the command while all ranks triggered to change the ODT setting have the changed ODT setting.

Abstract: In an embodiment, the present invention includes an execution unit to execute instructions of a first type, a local power gate circuit coupled to the execution unit to power gate the execution unit while a second execution unit is to execute instructions of a second type, and a controller coupled to the local power gate circuit to cause it to power gate the execution unit when an instruction stream does not include the first type of instructions. Other embodiments are described and claimed.

Abstract: Described herein are embodiments of asymmetric memory management to enable high bandwidth accesses. In embodiments, a high bandwidth cache or high bandwidth region can be synthesized using the bandwidth capabilities of more than one memory source. In one embodiment, memory management circuitry includes input/output (I/O) circuitry coupled with a first memory and a second memory. The I/O circuitry is to receive memory access requests. The memory management circuitry also includes logic to determine if the memory access requests are for data in a first region of system memory or a second region of system memory, and in response to a determination that one of the memory access requests is to the first region and a second of the memory access requests is to the second region, access data in the first region from the cache of the first memory and concurrently access data in the second region from the second memory.

Abstract: A memory subsystem includes a multi-device package including multiple memory devices organized as multiple ranks of memory. A control unit for the memory subsystem sends a memory access command concurrently to some or all of the ranks of memory, and triggers some of all of the memory ranks that receive the memory access command to change on-die termination (ODT) settings. One of the ranks is selected to execute the memory access command, and executes the command while all ranks triggered to change the ODT setting have the changed ODT setting.

Abstract: In an embodiment, the present invention includes an execution unit to execute instructions of a first type, a local power gate circuit coupled to the execution unit to power gate the execution unit while a second execution unit is to execute instructions of a second type, and a controller coupled to the local power gate circuit to cause it to power gate the execution unit when an instruction stream does not include the first type of instructions. Other embodiments are described and claimed.

Abstract: Apparatus, systems, and methods to implement polarity based data transfer function on a write data unit are described. The transfer function takes into account certain data values that are common, and transforms them to predetermined values that consume less power and are less common. Similarly, these predetermined values are transformed to the common values.

Abstract: Memory subsystem refresh management enables commands to access one or more identified banks across different bank groups with a single command. Instead of sending commands identifying a bank or banks in separate bank groups by each bank group individually, the command can cause the memory device to access banks in different bank groups. The command can be a refresh command. The command can be a precharge command.

Abstract: A memory subsystem includes a multi-device package including multiple memory devices organized as multiple ranks of memory. A control unit for the memory subsystem sends a memory access command concurrently to some or all of the ranks of memory, and triggers some of all of the memory ranks that receive the memory access command to change on-die termination (ODT) settings. One of the ranks is selected to execute the memory access command, and executes the command while all ranks triggered to change the ODT setting have the changed ODT setting.

Abstract: A system avoids false sampling due to reflections from previous commands or other noise on a data strobe line. The system uses a normalizer circuit or leaker circuit, and the data strobe line is not optimally terminated or is unterminated. The data strobe line is to receive a burst of data sample pulses or edges and sample a data line based on the edges. The receiving device includes logic that generates a count triggered from an initial edge on the data strobe line, and identifies, based on the count, an initial valid edge of the burst. Any false strobes due to noise or reflections that are received prior to the actual burst can be rejected.

Abstract: On-die termination (ODT) control enables programmable ODT latency settings. A memory device can couple to an associated memory controller via one or more buses shared by multiple memory devices organized ranks of memory. The memory controller generates a memory access command for a target rank. In response to the command, memory devices can selectively engage ODT for the memory access operation based on being in the target rank or a non-target rank, and based on whether the access command includes a Read or a Write. The memory device can engage ODT in accordance with a programmable ODT latency setting. The programmable ODT latency setting can set different ODT timing values for Read and Write transactions.

Abstract: A memory subsystem includes a multi-device package including multiple memory devices organized as multiple ranks of memory. A control unit for the memory subsystem sends a memory access command concurrently to some or all of the ranks of memory, and triggers some of all of the memory ranks that receive the memory access command to change on-die termination (ODT) settings. One of the ranks is selected to execute the memory access command, and executes the command while all ranks triggered to change the ODT setting have the changed ODT setting.

Abstract: Embodiments are generally directed to an asymmetric set combined cache including a direct-mapped cache portion and a multi-way cache portion. A processor may include one or more processing cores for processing of data, and a cache memory to cache data from a main memory for the one or more processing cores, the cache memory including a first cache portion, the first cache portion including a direct-mapped cache, and a second cache portion, the second cache portion including a multi-way cache. The cache memory includes asymmetric sets in the first cache portion and the second cache portion, the first cache portion being larger than the second cache portion. A coordinated replacement policy for the cache memory provides for replacement of data in the first cache portion and the second cache portion.

Abstract: Providing access to an external memory controller to internal error correction bits from a memory device for use as metadata bits by the memory controller. In a first mode the memory device applies internal error correction bits for internal error correction at the memory device. In a second mode the memory device provides access to the internal error correction bits to the memory controller to allow the memory controller to use the data.

Abstract: Embodiments are generally directed to an asymmetric set combined cache including a direct-mapped cache portion and a multi-way cache portion. A processor may include one or more processing cores for processing of data, and a cache memory to cache data from a main memory for the one or more processing cores, the cache memory including a first cache portion, the first cache portion including a direct-mapped cache, and a second cache portion, the second cache portion including a multi-way cache. The cache memory includes asymmetric sets in the first cache portion and the second cache portion, the first cache portion being larger than the second cache portion. A coordinated replacement policy for the cache memory provides for replacement of data in the first cache portion and the second cache portion.

Abstract: Memory subsystem refresh management enables commands to access one or more identified banks across different bank groups with a single command. Instead of sending commands identifying a bank or banks in separate bank groups by each bank group individually, the command can cause the memory device to access banks in different bank groups. The command can be a refresh command. The command can be a precharge command.

Abstract: Apparatus, systems, and methods to implement polarity based data transfer function for volatile memory power reduction are described. The transfer function take into account certain data values, all zeroes in particular, that are common and transforms them to predetermined values that consume less power and are less common. Similarly, these predetermined values are transformed to the common values.

Abstract: Exposing internal error correction bits from a memory device for use as metadata bits by an external memory controller. In a first mode the memory device applies internal error correction bits for internal error correction at the memory device. In a second mode the memory device exposes the internal error correction bits to the memory controller to allow the memory controller to use the data.

Abstract: A memory device and a memory controller can interface over a system data bus that has a narrower bandwidth than a data bus internal to the memory device. The memory device and memory controller transfer data over the system data bus on all transfer periods of a burst length, but send fewer bits than would be needed for the exchange to transfer all bits that can be read or written on the internal data bus of the memory device. The memory device can have different operating modes to allow for a common memory device to be used in different system configurations based on the ability to interface with the narrower bandwidth system data bus.

Abstract: In an embodiment, the present invention includes an execution unit to execute instructions of a first type, a local power gate circuit coupled to the execution unit to power gate the execution unit while a second execution unit is to execute instructions of a second type, and a controller coupled to the local power gate circuit to cause it to power gate the execution unit when an instruction stream does not include the first type of instructions. Other embodiments are described and claimed.