Patents by Inventor Nader Shamma
Nader Shamma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10192759Abstract: Methods and apparatuses for multiple patterning using image reversal are provided. The methods may include depositing gap-fill ashable hardmasks using a deposition-etch-ash method to fill gaps in a pattern of a semiconductor substrate and eliminating spacer etching steps using a single-etch planarization method. Such methods may be performed for double patterning, multiple patterning, and two dimensional patterning techniques in semiconductor fabrication.Type: GrantFiled: May 9, 2016Date of Patent: January 29, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Nader Shamma, Bart J. van Schravendijk, Sirish K. Reddy, Chunhai Ji
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Publication number: 20180337046Abstract: Methods and apparatuses for performing cycles of aspect ratio dependent deposition and aspect ratio independent etching on lithographically patterned substrates are described herein. Methods are suitable for reducing variation of feature depths and/or aspect ratios between features formed and partially formed by lithography, some partially formed features being partially formed due to stochastic effects. Methods and apparatuses are suitable for processing a substrate having a photoresist after extreme ultraviolet lithography. Some methods involve cycles of deposition by plasma enhanced chemical vapor deposition and directional etching by atomic layer etching.Type: ApplicationFiled: May 14, 2018Publication date: November 22, 2018Inventors: Nader Shamma, Richard Wise, Jengyi Yu, Samantha Tan
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Publication number: 20180240667Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer is formed conformally over sidewalls and horizontal surfaces of protruding features on a substrate. A passivation layer is then formed over tin oxide on the sidewalls, and tin oxide is then removed from the horizontal surfaces of the protruding features without being removed at the sidewalls of the protruding features. The material of the protruding features is then removed while leaving the tin oxide that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers. Hydrogen-based and chlorine-based dry etch chemistries are used to selectively etch tin oxide in a presence of a variety of materials. In another method a patterned tin oxide hardmask layer is formed on a substrate by forming a patterned layer over an unpatterned tin oxide and transferring the pattern to the tin oxide.Type: ApplicationFiled: February 12, 2018Publication date: August 23, 2018Inventors: Jengyi Yu, Samantha Tan, Yu Jiang, Hui-Jung Wu, Richard Wise, Yang Pan, Nader Shamma, Boris Volosskiy
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Publication number: 20180190503Abstract: Provided herein are methods and related apparatus to smooth the edges of features patterned using extreme ultraviolet (EUV) lithography. In some embodiments, at least one cycle of depositing passivation layer that preferentially collects in crevices of a feature leaving protuberances exposed, and etching the feature to remove the exposed protuberances, thereby smoothing the feature, is performed. The passivation material may preferentially collect in the crevices due to a higher surface to volume ratio in the crevices than in the protuberances. In some embodiments, local critical dimension uniformity (LCDU), a measure of roughness in contact holes, is reduced. In some embodiments, at least one cycle of depositing a thin layer in a plurality of holes formed in photoresist, the holes having different CDs, wherein the thin layer preferentially deposits in the larger CD holes, and anisotropically removing the thin layer to remove it at the bottoms of the holes, is performed.Type: ApplicationFiled: March 1, 2018Publication date: July 5, 2018Inventors: Richard Wise, Nader Shamma
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Publication number: 20180158683Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.Type: ApplicationFiled: January 18, 2018Publication date: June 7, 2018Applicant: Novellus Systems, Inc.Inventors: Frank L. Pasquale, Shankar Swaminathan, Adrien LaVoie, Nader Shamma, Girish A. Dixit
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Patent number: 9922839Abstract: Provided herein are methods and related apparatus to smooth the edges of features patterned using extreme ultraviolet (EUV) lithography. In some embodiments, at least one cycle of depositing passivation layer that preferentially collects in crevices of a feature leaving protuberances exposed, and etching the feature to remove the exposed protuberances, thereby smoothing the feature, is performed. The passivation material may preferentially collect in the crevices due to a higher surface to volume ratio in the crevices than in the protuberances. In some embodiments, local critical dimension uniformity (LCDU), a measure of roughness in contact holes, is reduced. In some embodiments, at least one cycle of depositing a thin layer in a plurality of holes formed in photoresist, the holes having different CDs, wherein the thin layer preferentially deposits in the larger CD holes, and anisotropically removing the thin layer to remove it at the bottoms of the holes, is performed.Type: GrantFiled: June 22, 2016Date of Patent: March 20, 2018Assignee: Lam Research CorporationInventors: Richard Wise, Nader Shamma
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Patent number: 9905423Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.Type: GrantFiled: June 8, 2016Date of Patent: February 27, 2018Assignee: Novellus Systems, Inc.Inventors: Frank L. Pasquale, Shankar Swaminathan, Adrien LaVoie, Nader Shamma, Girish A. Dixit
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Publication number: 20170316935Abstract: Methods of and apparatuses for processing substrates having carbon-containing material using atomic layer deposition and selective deposition are provided. Methods involve exposing a carbon-containing material on a substrate to an oxidant and igniting a first plasma at a first bias power to modify a surface of the substrate and exposing the modified surface to an inert plasma at a second bias power to remove the modified surface. Methods also involve selectively depositing a second carbon-containing material onto the substrate. ALE and selective deposition may be performed without breaking vacuum.Type: ApplicationFiled: April 21, 2017Publication date: November 2, 2017Inventors: Samantha Tan, Jengyi Yu, Richard Wise, Nader Shamma, Yang Pan
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Patent number: 9618846Abstract: Provided herein are multi-layer stacks for use in extreme ultraviolet lithography tailored to achieve optimum etch contrast to shrink features and smooth the edges of features while enabling use of an optical leveling sensor with little or reduced error. The multi-layer stacks may include an atomically smooth layer with an average local roughness of less than a monolayer, and one or more underlayers, which may be between a target layer to be patterned and a photoresist. Also provided are methods of depositing multi-layer stacks for use in extreme ultraviolet lithography.Type: GrantFiled: February 25, 2016Date of Patent: April 11, 2017Assignee: Lam Research CorporationInventors: Nader Shamma, Thomas Mountsier, Donald Schlosser
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Publication number: 20160379824Abstract: Provided herein are methods and related apparatus to smooth the edges of features patterned using extreme ultraviolet (EUV) lithography. In some embodiments, at least one cycle of depositing passivation layer that preferentially collects in crevices of a feature leaving protuberances exposed, and etching the feature to remove the exposed protuberances, thereby smoothing the feature, is performed. The passivation material may preferentially collect in the crevices due to a higher surface to volume ratio in the crevices than in the protuberances. In some embodiments, local critical dimension uniformity (LCDU), a measure of roughness in contact holes, is reduced. In some embodiments, at least one cycle of depositing a thin layer in a plurality of holes formed in photoresist, the holes having different CDs, wherein the thin layer preferentially deposits in the larger CD holes, and anisotropically removing the thin layer to remove it at the bottoms of the holes, is performed.Type: ApplicationFiled: June 22, 2016Publication date: December 29, 2016Inventors: Richard Wise, Nader Shamma
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Publication number: 20160293418Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.Type: ApplicationFiled: June 8, 2016Publication date: October 6, 2016Inventors: Frank L. Pasquale, Shankar Swaminathan, Adrien LaVoie, Nader Shamma, Girish A. Dixit
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Publication number: 20160254171Abstract: Methods and apparatuses for multiple patterning using image reversal are provided. The methods may include depositing gap-fill ashable hardmasks using a deposition-etch-ash method to fill gaps in a pattern of a semiconductor substrate and eliminating spacer etching steps using a single-etch planarization method. Such methods may be performed for double patterning, multiple patterning, and two dimensional patterning techniques in semiconductor fabrication.Type: ApplicationFiled: May 9, 2016Publication date: September 1, 2016Inventors: Nader Shamma, Bart J. van Schravendijk, Sirish K. Reddy, Chunhai Ji
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Patent number: 9390909Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.Type: GrantFiled: February 28, 2014Date of Patent: July 12, 2016Assignee: Novellus Systems, Inc.Inventors: Frank L. Pasquale, Shankar Swaminathan, Adrien LaVoie, Nader Shamma, Girish Dixit
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Publication number: 20160179005Abstract: Provided herein are multi-layer stacks for use in extreme ultraviolet lithography tailored to achieve optimum etch contrast to shrink features and smooth the edges of features while enabling use of an optical leveling sensor with little or reduced error. The multi-layer stacks may include an atomically smooth layer with an average local roughness of less than a monolayer, and one or more underlayers, which may be between a target layer to be patterned and a photoresist. Also provided are methods of depositing multi-layer stacks for use in extreme ultraviolet lithography.Type: ApplicationFiled: February 25, 2016Publication date: June 23, 2016Inventors: Nader Shamma, Thomas Mountsier, Donald Schlosser
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Patent number: 9362133Abstract: Methods and apparatuses for multiple patterning using image reversal are provided. The methods may include depositing gap-fill ashable hardmasks using a deposition-etch-ash method to fill gaps in a pattern of a semiconductor substrate and eliminating spacer etching steps using a single-etch planarization method. Such methods may be performed for double patterning, multiple patterning, and two dimensional patterning techniques in semiconductor fabrication.Type: GrantFiled: December 10, 2013Date of Patent: June 7, 2016Assignee: Lam Research CorporationInventors: Nader Shamma, Bart van Schravendijk, Sirish Reddy, Chunhai Ji
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Patent number: 9304396Abstract: Provided herein are multi-layer stacks for use in extreme ultraviolet lithography tailored to achieve optimum etch contrast to shrink features and smooth the edges of features while enabling use of an optical leveling sensor with little or reduced error. The multi-layer stacks may include an atomically smooth layer with an average local roughness of less than a monolayer, and one or more underlayers, which may be between a target layer to be patterned and a photoresist. Also provided are methods of depositing multi-layer stacks for use in extreme ultraviolet lithography.Type: GrantFiled: February 20, 2014Date of Patent: April 5, 2016Assignee: Lam Research CorporationInventors: Nader Shamma, Thomas Mountsier, Don Schlosser
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Publication number: 20150126042Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.Type: ApplicationFiled: February 28, 2014Publication date: May 7, 2015Inventors: Frank L. Pasquale, Shankar Swaminathan, Adrien LaVoie, Nader Shamma, Girish Dixit
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Publication number: 20140239462Abstract: Provided herein are multi-layer stacks for use in extreme ultraviolet lithography tailored to achieve optimum etch contrast to shrink features and smooth the edges of features while enabling use of an optical leveling sensor with little or reduced error. The multi-layer stacks may include an atomically smooth layer with an average local roughness of less than a monolayer, and one or more underlayers, which may be between a target layer to be patterned and a photoresist. Also provided are methods of depositing multi-layer stacks for use in extreme ultraviolet lithography.Type: ApplicationFiled: February 20, 2014Publication date: August 28, 2014Inventors: Nader Shamma, Thomas Mountsier, Donald Schlosser
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Publication number: 20140170853Abstract: Methods and apparatuses for multiple patterning using image reversal are provided. The methods may include depositing gap-fill ashable hardmasks using a deposition-etch-ash method to fill gaps in a pattern of a semiconductor substrate and eliminating spacer etching steps using a single-etch planarization method. Such methods may be performed for double patterning, multiple patterning, and two dimensional patterning techniques in semiconductor fabrication.Type: ApplicationFiled: December 10, 2013Publication date: June 19, 2014Inventors: Nader Shamma, Bart van Schravendijk, Sirish Reddy, Chunhai Ji
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Publication number: 20050057754Abstract: Properties of thin electrically conductive films are measured using plasmons. The plasmons are excited in the film using a suitable pump beam of electromagnetic radiation. A probe beam of electromagnetic radiation is directed onto the excited film and is diffracted thereby and the diffracted beam is detected. The detected signal indicates film properties such as thickness and surface roughness.Type: ApplicationFiled: July 8, 2004Publication date: March 17, 2005Inventors: David Smith, Behzad Imani, Nader Shamma, Patrick Maxton, Mark Brongersma