Abstract: A transistor substrate is provided. The transistor substrate includes a plurality of data lines and a plurality of scan lines, wherein the scan lines intersects with the data lines to define a plurality of pixel units. One of the pixel units includes a first electrode having a slit substantially parallel to the data lines. The pixel units include a second electrode and a switching transistor. The switching transistor includes a gate electrode connecting to one of the scan lines. The gate electrode has a first edge substantially parallel to the extending direction of the scan lines. The switching transistor includes a drain electrode electrically connected to one of the first electrode and the second electrode. The drain electrode includes an extending portion which extends toward the slit and extends away from an extending line of the first edge. The drain electrode and the slit have an overlapping region.

Abstract: A display device includes: a substrate including a display region and a peripheral region, wherein the peripheral region is adjacent to the display region; a first transistor disposed on the peripheral region, wherein the first transistor includes a first semiconductor layer and a drain electrode electrically connected to the first semiconductor layer, and the first semiconductor layer is a silicon semiconductor layer; and a second transistor disposed on the display region, wherein the second transistor includes a second semiconductor layer and a gate electrode corresponding to the second semiconductor layer, and the second semiconductor layer is an oxide semiconductor layer, wherein the drain electrode of the first transistor is electrically connected to the gate electrode of the second transistor.

Abstract: An electronic device viewable from a viewing side is disclosed. The electronic device includes a first substrate, a second substrate, a display unit, a sensor unit and a first light blocking layer. The second substrate is disposed between the first substrate and a viewing side of the electronic device. The display unit is disposed between the first substrate and the second substrate. The sensor unit is disposed on the second substrate. The first light blocking layer is disposed between the sensor unit and the viewing side.

Abstract: A display device is disclosed, which includes: a first substrate; an oxide semiconductor layer disposed on the first substrate; a silicon semiconductor layer disposed on the first substrate; and a capacitor including a first conductive component and a second conductive component, wherein the first conductive component is electrically connected to the oxide semiconductor layer and the second conductive component is electrically connected to the silicon semiconductor layer.

Abstract: A display device is disclosed, which includes: a first substrate; a first transistor disposed on the first substrate and including a first gate electrode, a first drain electrode, a first source electrode, and a first oxide semiconductor layer, wherein the first oxide semiconductor layer is oppositely disposed on the first gate electrode, and the first drain electrode and the first source electrode are electrically connected to the first oxide semiconductor layer; and a second transistor disposed on the first substrate and including a second gate electrode, a second drain electrode, a second source electrode, and a silicon semiconductor layer, wherein the second gate electrode is oppositely disposed on the silicon semiconductor layer, the second drain electrode and the second source electrode are electrically connected to the silicon semiconductor layer, and the first gate electrode is electrically connected to one of the second drain electrode and the second source electrode.

Abstract: A display device includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor including a silicon semiconductor; a gate electrode disposed above the first semiconductor; and a first drain electrode electrically connected to the first semiconductor, wherein the first drain electrode is electrically connected to the light emitting diode. The second transistor includes: a second semiconductor including an oxide semiconductor; and a second drain electrode electrically connected to the second semiconductor, wherein the second drain electrode is electrically connected to the gate electrode of the first transistor.

Abstract: A display device includes: a substrate including a display region and a peripheral region, wherein the peripheral region is adjacent to the display region; a first transistor disposed on the peripheral region, wherein the first transistor includes a first semiconductor layer and a drain electrode electrically connected to the first semiconductor layer, and the first semiconductor layer is a silicon semiconductor layer; and a second transistor disposed on the display region, wherein the second transistor includes a second semiconductor layer and a gate electrode corresponding to the second semiconductor layer, and the second semiconductor layer is an oxide semiconductor layer, wherein the drain electrode of the first transistor is electrically connected to the gate electrode of the second transistor.

Abstract: A display device is disclosed, which includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor layer; a first top gate electrode disposed above the first semiconductor layer; a first bottom gate electrode disposed under the first semiconductor layer; a first source electrode electrically connected to the first semiconductor layer; and a first drain electrode electrically connected to the first semiconductor layer, wherein the first drain electrode is electrically connected to the light emitting diode. In addition, the second transistor includes: a second semiconductor layer. Herein, one of the first semiconductor layer and the second semiconductor layer includes a first silicon semiconductor layer, and the other includes a first oxide semiconductor layer.

Abstract: A display device is disclosed, which includes: a first substrate including a display region and a peripheral region, wherein the peripheral region is adjacent to the display region; a first transistor disposed on the peripheral region, wherein the first transistor includes a first semiconductor layer, and the first semiconductor layer is a silicon semiconductor layer; a second transistor disposed on the display region, wherein the second transistor includes a second semiconductor layer, and the second semiconductor layer is an oxide semiconductor layer; a first insulating layer disposed under the first semiconductor layer; and a buffer layer disposed between the first substrate and the first insulating layer, wherein a thickness of the first insulating layer is greater than a thickness of the buffer layer.

Abstract: A display panel comprises a first substrate, a second substrate, a display layer and transistors. One of the transistors includes a gate electrode disposed on the base plate, a first insulating layer disposed on the gate electrode, an active layer disposed on the first insulating layer, and a source electrode and a drain electrode disposed on the active layer, wherein the active layer includes a channel region between the source electrode and the drain electrode. At least one of the source and drain electrodes includes a first conductive layer disposed on the active layer, and a second conductive layer disposed on and contacting the first conductive layer, wherein the second conductive layer exposes a portion of top surface of the first conductive layer so that the first conductive layer possesses a first protrusion portion protruding from the edge of the second conductive layer and extending towards the channel region.

Abstract: A display device, and method for manufacture, having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. The first active layer is a different material than said second active layer, and a hydrogen concentration of the second gate insulator is less than a hydrogen concentration of the first gate insulator.

Abstract: A display device, and method for manufacture, having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. A material of the first active layer is different than a material of the second active layer, and a hydrogen concentration of the second gate insulator is different from a hydrogen concentration of the first gate insulator.

Abstract: A display device is provided, including a first substrate, a plurality of first contact pads, a second substrate, a plurality of second contact pads, and a plurality of first traces. The first substrate includes a display area and a non-display area. The first contact pads disposed on the non-display area. The second substrate includes a first side and a second side, wherein the first side is opposite to the second side. The second contact pads are disposed on the first side, wherein the second contact pads are electrically connected to the first contact pads. The first traces are disposed on the second side, wherein the first traces are electrically connected to the second contact pads through a plurality of through holes respectively, and one of the through holes overlaps corresponding one of the second contact pads in a normal direction of the second substrate.

Abstract: A display device is disclosed, which includes: a first substrate; a first transistor disposed on the first substrate and including a first gate electrode, a first drain electrode, a first source electrode, and a first oxide semiconductor layer, wherein the first oxide semiconductor layer is oppositely disposed on the first gate electrode, and the first drain electrode and the first source electrode are electrically connected to the first oxide semiconductor layer, and a second transistor disposed on the first substrate and including a second gate electrode, a second drain electrode, a second source electrode, and a silicon semiconductor layer, wherein the second gate electrode is oppositely disposed on the silicon semiconductor layer, the second drain electrode and the second source electrode are electrically connected to the silicon semiconductor layer, and the first gate electrode is electrically connected to one of the second drain electrode and the second source electrode.

Abstract: A display device is disclosed, which includes: a first substrate; a first transistor disposed over the first substrate, wherein the first transistor includes an oxide semiconductor layer; and a second transistor disposed over the first substrate, wherein the second transistor includes a silicon semiconductor layer, wherein the oxide semiconductor layer includes indium, gallium, and oxygen; and a ratio of an atomic percentage of oxygen to a sum of atomic percentages of indium and gallium in the oxide semiconductor layer is greater than or equal to 1 and less than or equal to 3.

Abstract: A display device is disclosed, which includes: a first substrate including a display region and a peripheral region, wherein the peripheral region is adjacent to the display region; a first transistor disposed on the peripheral region, wherein the first transistor includes a first semiconductor layer, and the first semiconductor layer is a silicon semiconductor layer; a second transistor disposed on the display region, wherein the second transistor includes a second semiconductor layer, and the second semiconductor layer is an oxide semiconductor layer; a first insulating layer disposed under the first semiconductor layer, and a buffer layer disposed between the first substrate and the first insulating layer, wherein a thickness of the first insulating layer is greater than a thickness of the buffer layer.

Abstract: A display device is disclosed, which includes: a first substrate; a first transistor disposed on the first substrate, wherein the first transistor comprises a first semiconductor layer; a second transistor disposed on the first substrate, wherein the second transistor includes a second semiconductor layer; and a first insulating layer disposed under the first semiconductor layer; wherein a thickness of the first insulating layer is greater than or equal to 200 nm and less than or equal to 500 nm; and wherein one of the first semiconductor layer and the second semiconductor layer comprises a silicon semiconductor layer, and the other comprises an oxide semiconductor layer.

Abstract: A display device is disclosed, which includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor layer; a first top gate electrode disposed above the first semiconductor layer; a first bottom gate electrode disposed under the first semiconductor layer; a first source electrode electrically connected to the first semiconductor layer; and a first drain electrode electrically connected to the first semiconductor layer, wherein the first drain electrode is electrically connected to the light emitting diode. In addition, the second transistor includes: a second semiconductor layer. Herein, one of the first semiconductor layer and the second semiconductor layer includes a first silicon semiconductor layer, and the other includes a first oxide semiconductor layer.

Abstract: A display device is disclosed, which includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor layer; a first top gate electrode disposed above the first semiconductor layer; a first bottom gate electrode disposed under the first semiconductor layer; a first source electrode electrically connected to the first semiconductor layer; and a first drain electrode electrically connected to the first semiconductor layer, wherein the first drain electrode is electrically connected to the light emitting diode. In addition, the second transistor includes: a second semiconductor layer. Herein, one of the first semiconductor layer and the second semiconductor layer includes a first silicon semiconductor layer, and the other includes a first oxide semiconductor layer.

Abstract: A display panel includes a first inorganic capping layer (INOCL) in a non-displaying area (AND) of a substrate, a first electrode in the AND formed on the first INOCL, an organic capping layer (OCL) on the substrate overlapping at least a portion of the first electrode, and a first dam structure in the AND positioned between a first lateral surface of the substrate and the OCL in top view. A first distance H is between the top surfaces of the first INOCL and the OCL in a normal direction of the substrate. The first dam structure has a first maximum dam height Hdam and a dam width Wdam. A second distance Lsr is a minimum distance from a third lateral surface of the first dam structure to a second lateral surface of the first electrode, wherein H, Lsr, Hdam and Wdam conform to the equation: H×(0.1870?Wdam/(2.46×Lsr))?Hdam?H×(0.9548?Wdam/(44.26×Lsr)).