Patents by Inventor Nam-Goo Cha

Nam-Goo Cha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190157515
    Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.
    Type: Application
    Filed: January 23, 2019
    Publication date: May 23, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong Il KIM, Hyong Sik WON, Wan Tae LIM, Nam Goo CHA
  • Publication number: 20190103438
    Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter.
    Type: Application
    Filed: May 21, 2018
    Publication date: April 4, 2019
    Inventors: Nam Goo CHA, Yong Il KIM, Young Soo PARK
  • Publication number: 20190103510
    Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.
    Type: Application
    Filed: November 14, 2018
    Publication date: April 4, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo CHA, Yong Il KIM, Young Soo PARK, Sung Hyun SIM, Hanul YOO
  • Patent number: 10243123
    Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: March 26, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ha-nul Yoo, Yong-il Kim, Nam-goo Cha, Wan-tae Lim, Kyung-wook Hwang, Sung-hyun Sim, Hye-seok Noh
  • Patent number: 10230021
    Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: March 12, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong Il Kim, Hyong Sik Won, Wan Tae Lim, Nam Goo Cha
  • Patent number: 10217914
    Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent sup
    Type: Grant
    Filed: May 24, 2016
    Date of Patent: February 26, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo Cha, Wan Tae Lim, Yong Il Kim, Hye Seok Noh, Eun Joo Shin, Sung Hyun Sim, Hanul Yoo
  • Patent number: 10204962
    Abstract: A display apparatus may include a light source module that may include a substrate having a plurality of chip mounting areas of which each has a connection pad disposed therein, and a plurality of semiconductor light emitting devices electrically coupled to separate connection pads. The display apparatus may include a black matrix on the substrate and having a plurality of holes corresponding to the pattern of chip mounting areas. The semiconductor light emitting devices may be in separate, respective holes to be electrically coupled to separate connection pads. The display apparatus may include unit pixels, where each unit pixel includes multiple adjacent semiconductor light emitting devices. The semiconductor light emitting devices may be removably coupled to separate connection pads, and a semiconductor light emitting device may be interchangeably swapped from a connection pad.
    Type: Grant
    Filed: July 25, 2016
    Date of Patent: February 12, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Nam Goo Cha, Ki Seok Kim, Yun Hee Lee
  • Patent number: 10170666
    Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.
    Type: Grant
    Filed: December 23, 2016
    Date of Patent: January 1, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo Cha, Yong Il Kim, Young Soo Park, Sung Hyun Sim, Hanul Yoo
  • Publication number: 20180261738
    Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent sup
    Type: Application
    Filed: May 8, 2018
    Publication date: September 13, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo CHA, Wan Tae LIM, Yong II KIM, Hye Seok NOH, Eun Joo SHIN, Sung Hyun SIM, Hanul YOO
  • Patent number: 9997561
    Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter.
    Type: Grant
    Filed: January 23, 2017
    Date of Patent: June 12, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo Cha, Yong Il Kim, Young Soo Park
  • Patent number: 9911381
    Abstract: There is provided a display device including a plurality of pixels. Each of the plurality of pixels may include a plurality of switching devices, at least one capacitor, and a semiconductor light-emitting device. The display device may further include a driving circuit configured to apply currents to the semiconductor light-emitting device through the plurality of switching devices and at least one capacitor. The semiconductor light-emitting device may emit red light, green light, and blue light through the currents applied by the driving circuit.
    Type: Grant
    Filed: August 13, 2015
    Date of Patent: March 6, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo Cha, Young Soo Park, Sung Hyun Sim, Je Won Kim
  • Patent number: 9871164
    Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, and a plurality of light emitting nanostructures. The base layer includes a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. The light emitting nanostructures are respectively disposed on the exposed regions of the base layer and include a plurality of nanocores having a first conductivity type semiconductor and having side surfaces provided as the same crystal planes. The light emitting nanostructures include an active layer and a second conductivity type semiconductor layer sequentially disposed on surfaces of the nanocores. Upper surfaces of the nanocores are provided as portions of upper surfaces of the light emitting nanostructures, and the upper surfaces of the light emitting nanostructures are substantially planar with each other.
    Type: Grant
    Filed: June 13, 2016
    Date of Patent: January 16, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo Cha, Dong Ho Kim, Geon Wook Yoo
  • Publication number: 20180013042
    Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
    Type: Application
    Filed: September 14, 2017
    Publication date: January 11, 2018
    Inventors: Ha-nul YOO, Yong-il KIM, Nam-goo CHA, Wan-tae LIM, Kyung-wook HWANG, Sung-hyun SIM, Hye-seok NOH
  • Patent number: 9853185
    Abstract: There is provided a method for manufacturing a nanostructure semiconductor light emitting device, including: forming a mask having a plurality of openings on a base layer; growing a first conductivity-type semiconductor layer on exposed regions of the base layer such that the plurality of openings are filled, to form a plurality of nanocores; partially removing the mask such that side surfaces of the plurality of nanocores are exposed; heat-treating the plurality of nanocores after partially removing the mask; sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores to form a plurality of light emitting nanostructures, after the heat treatment; and planarizing upper parts of the plurality of light emitting nanostructures such that upper surfaces of the nanocores are exposed.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: December 26, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam-Goo Cha, Dong-Ho Kim, Geon-Wook Yoo
  • Patent number: 9842966
    Abstract: There is provided a nanostructure semiconductor light emitting device including a base layer formed of a first conductivity-type semiconductor, a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer, a plurality of nanocores disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor, an active layer disposed on surfaces of the plurality of nanocores positioned to be higher than the first insulating layer, a second insulating layer disposed on the first insulating layer and having a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores, and a second conductivity-type semiconductor layer disposed on the surface of the active layer positioned to be higher than the second insulating layer.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: December 12, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam-Goo Cha, Bong-Jin Kuh, Han-Mei Choi
  • Patent number: 9825014
    Abstract: A light source module includes a circuit board having a plurality of chip mounting regions, the plurality of chip mounting regions respectively having at least one connection pad; at least one alignment component respectively disposed on the plurality of chip mounting regions, and having a convex or concave shape; and a plurality of LED chips respectively mounted on the plurality of chip mounting regions, respectively having at least one electrode electrically connected to the at least one connection pad, and respectively coupled to the at least one alignment component.
    Type: Grant
    Filed: August 2, 2016
    Date of Patent: November 21, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo Cha, Yong Ii Kim, Wan tae Lim
  • Patent number: 9799809
    Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: October 24, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ha-nul Yoo, Yong-il Kim, Nam-goo Cha, Wan-tae Lim, Kyung-wook Hwang, Sung-hyun Sim, Hye-seok Noh
  • Publication number: 20170294479
    Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter.
    Type: Application
    Filed: January 23, 2017
    Publication date: October 12, 2017
    Inventors: Nam Goo CHA, Yong Il KIM, Young Soo PARK
  • Publication number: 20170288093
    Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.
    Type: Application
    Filed: December 23, 2016
    Publication date: October 5, 2017
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo CHA, Yong Il KIM, Young Soo PARK, Sung Hyun SIM, Hanul YOO
  • Patent number: 9780260
    Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: October 3, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung Wook Hwang, Han Kyu Seong, Nam Goo Cha