Patents by Inventor Nam-Goo Cha

Nam-Goo Cha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170288093
    Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.
    Type: Application
    Filed: December 23, 2016
    Publication date: October 5, 2017
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo CHA, Yong Il KIM, Young Soo PARK, Sung Hyun SIM, Hanul YOO
  • Patent number: 9780260
    Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: October 3, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung Wook Hwang, Han Kyu Seong, Nam Goo Cha
  • Publication number: 20170250318
    Abstract: A method of manufacturing a light emitting device package is provided. The method includes preparing a film strip including one or more light blocking regions and one or more wavelength conversion regions, preparing light emitting devices, each including one or more light emitting regions, bonding the film strip to the light emitting devices so as to dispose the one or more wavelength conversion regions on the one or more light emitting regions of each of the light emitting devices, and cutting the film strip and the light emitting devices into individual device units.
    Type: Application
    Filed: October 28, 2016
    Publication date: August 31, 2017
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo CHA, Sung Hyun SIM, Wan tae LIM, Hye Seok NOH, Hanul YOO
  • Publication number: 20170162746
    Abstract: A light-emitting device includes a substrate including a top surface and a first side surface, wherein an area of the top surface is larger than an area of the first side surface, and a light-emitting structure on the first side surface of the substrate, the light-emitting structure having a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer, wherein the light-emitting structure emits a first light having a first peak wavelength, and wherein an emission area of a first light emitted through the top surface of the substrate is larger than an emission area of a first light emitted through the first side surface of the substrate.
    Type: Application
    Filed: September 20, 2016
    Publication date: June 8, 2017
    Inventors: Nam-goo CHA, Young-soo PARK, Dong-hyun CHO
  • Publication number: 20170148771
    Abstract: A light source module includes a circuit board having a plurality of chip mounting regions, the plurality of chip mounting regions respectively having at least one connection pad; at least one alignment component respectively disposed on the plurality of chip mounting regions, and having a convex or concave shape; and a plurality of LED chips respectively mounted on the plurality of chip mounting regions, respectively having at least one electrode electrically connected to the at least one connection pad, and respectively coupled to the at least one alignment component.
    Type: Application
    Filed: August 2, 2016
    Publication date: May 25, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Nam Goo CHA, Yong II KIM, Wan tae LIM
  • Publication number: 20170141154
    Abstract: A display apparatus may include a light source module that may include a substrate having a plurality of chip mounting areas of which each has a connection pad disposed therein, and a plurality of semiconductor light emitting devices electrically coupled to separate connection pads. The display apparatus may include a black matrix on the substrate and having a plurality of holes corresponding to the pattern of chip mounting areas. The semiconductor light emitting devices may be in separate, respective holes to be electrically coupled to separate connection pads. The display apparatus may include unit pixels, where each unit pixel includes multiple adjacent semiconductor light emitting devices. The semiconductor light emitting devices may be removably coupled to separate connection pads, and a semiconductor light emitting device may be interchangeably swapped from a connection pad.
    Type: Application
    Filed: July 25, 2016
    Publication date: May 18, 2017
    Applicant: Samsung Electronics Co., Ltd
    Inventors: NAM GOO CHA, Ki Seok Kim, Yun Hee Lee
  • Publication number: 20170092820
    Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.
    Type: Application
    Filed: September 29, 2016
    Publication date: March 30, 2017
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong Il KIM, Hyong Sik WON, Wan Tae LIM, Nam Goo CHA
  • Patent number: 9608163
    Abstract: A nano-structure semiconductor light emitting device includes a base layer formed of a first conductivity type semiconductor, and a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer. A plurality of nanocores is disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor. An active layer is disposed on surfaces of the plurality of nanocores and positioned above the first insulating layer. A second insulating layer is disposed on the first insulating layer and has a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores. A second conductivity-type semiconductor layer is disposed on the surface of the active layer positioned to be above the second insulating layer.
    Type: Grant
    Filed: January 27, 2014
    Date of Patent: March 28, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo Cha, Bong Jin Kuh, Han Mei Choi
  • Publication number: 20170077348
    Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a magnetic layer on the light-emitting structure. The magnetic layer may have at least one magnetization direction that is parallel to an upper surface of the active layer. The magnetic layer may generate a magnetic field that is parallel to the upper surface of the active layer. The magnetic layer may include multiple structures that may have different magnetization directions. Multiple magnetic layers may be included on the light-emitting structure. A magnetic layer may be on a contact electrode. A magnetic layer may be isolated from a pad electrode.
    Type: Application
    Filed: April 28, 2016
    Publication date: March 16, 2017
    Inventors: Wan Tae LIM, Yong II Kim, Nam Goo Cha, Sung Hyun Sim
  • Publication number: 20170062680
    Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
    Type: Application
    Filed: July 1, 2016
    Publication date: March 2, 2017
    Inventors: Ha-nul YOO, Yong-il KIM, Nam-goo CHA, Wan-tae LIM, Kyung-wook HWANG, Sung-hyun SIM, Hye-seok NOH
  • Patent number: 9583672
    Abstract: A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer.
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: February 28, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam-goo Cha, Dong-ho Kim, Geon-wook Yoo, Dong-hoon Lee
  • Publication number: 20170040489
    Abstract: There is provided a method for manufacturing a nanostructure semiconductor light emitting device, including: forming a mask having a plurality of openings on a base layer; growing a first conductivity-type semiconductor layer on exposed regions of the base layer such that the plurality of openings are filled, to form a plurality of nanocores; partially removing the mask such that side surfaces of the plurality of nanocores are exposed; heat-treating the plurality of nanocores after partially removing the mask; sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores to form a plurality of light emitting nanostructures, after the heat treatment; and planarizing upper parts of the plurality of light emitting nanostructures such that upper surfaces of the nanocores are exposed.
    Type: Application
    Filed: October 19, 2016
    Publication date: February 9, 2017
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam-Goo CHA, Dong-Ho KIM, Geon-Wook YOO
  • Patent number: 9559260
    Abstract: There is provided a semiconductor light emitting device 100 including a substructure 101, 120, 130 including at least one light emitting region R1 including a plurality of three-dimensional (3-D) light emitting nanostructures 140 and at least one electrode region R2, R3 including a plurality of locations CP2A, 17A, 17B, 18A, 18B wherein an arrangement of the plurality of three-dimensional (3-D) light emitting nanostructures 140 and the plurality of locations CP2A, 17A, 17B, 18A, 18B are identical.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: January 31, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong Kuk Lee, Geun Woo Ko, Geon-Wook Yoo, Nam Goo Cha
  • Patent number: 9553234
    Abstract: A method of manufacturing a nanostructure semiconductor light emitting device may includes preparing a mask layer by sequentially forming a first insulating layer and a second insulating layer on a base layer configured of a first conductivity-type semiconductor, forming a plurality of openings penetrating the mask layer, growing a plurality of nanorods in the plurality of openings, removing the second insulating layer, preparing a plurality of nanocores by re-growing the plurality of nanorods, and forming nanoscale light emitting structures by sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores. The plurality of openings may respectively include a mold region located in the second insulating layer, and the mold region includes at least one curved portion of which an inclination of a side surface varies according to proximity to the first insulating layer.
    Type: Grant
    Filed: January 28, 2015
    Date of Patent: January 24, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo Cha, Ki Hyung Lee, Wan Tae Lim, Geun Woo Ko, Min Wook Choi
  • Publication number: 20170018685
    Abstract: A method of manufacturing a light-emitting diode (LED) includes preparing a substrate, forming a plurality of semiconductor light-emitting units on the substrate, each of the plurality of semiconductor light-emitting units protruding from the substrate and including a first conductive semiconductor layer, and an active layer and a second conductive semiconductor layer, the active layer and the second conductive semiconductor layer sequentially covering the first conductive semiconductor layer, dipping the semiconductor light-emitting units into an aqueous solution containing metal salt and an alkaline ligand compound, and forming an electrode layer on the plurality of semiconductor light-emitting units, wherein the forming the electrode layer includes maintaining a temperature of the aqueous solution between about 40° C. and about 200° C.
    Type: Application
    Filed: May 10, 2016
    Publication date: January 19, 2017
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-hyun CHO, Taek-sung KIM, Nam-goo CHA
  • Patent number: 9537051
    Abstract: A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructure
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: January 3, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo Cha, Jin Bock Lee, Dong Kuk Lee, Dong Hyun Cho, Min Wook Choi
  • Patent number: 9525100
    Abstract: Provided is a nano-structured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures which are formed on the first type semiconductor layer and include nanocores, and active layers and second type semiconductor layers that enclose surfaces of the nanocores; an electrode layer which encloses and covers the plurality of nanostructures; and a plurality of resistant layers which are formed on the electrode layer and respectively correspond to the plurality of nanostructures.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: December 20, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Geon-Wook Yoo, Nam-goo Cha, Dong-kuk Lee, Dong-hoon Lee
  • Patent number: 9525102
    Abstract: There is provided a method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity-type semiconductor, forming a mask including an etch stop layer on the base layer, forming a plurality of openings with regions of the base layer exposed therethrough, in the mask; forming a plurality of nanocores by growth of the first conductivity-type semiconductor on the exposed regions of the base layer to fill the plurality of openings, partially removing the mask using the etch stop layer to expose side portions of the plurality of nanocores, and sequentially growth of an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: December 20, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam-Goo Cha, Geon-Wook Yoo, Han-Kyu Seong
  • Publication number: 20160351764
    Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent sup
    Type: Application
    Filed: May 24, 2016
    Publication date: December 1, 2016
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo CHA, Wan Tae LIM, Yong Il KIM, Hye Seok NOH, Eun Joo SHIN, Sung Hyun SIM, Hanul YOO
  • Patent number: 9508893
    Abstract: There is provided a method for manufacturing a nanostructure semiconductor light emitting device, including: forming a mask having a plurality of openings on a base layer; growing a first conductivity-type semiconductor layer on exposed regions of the base layer such that the plurality of openings are filled, to form a plurality of nanocores; partially removing the mask such that side surfaces of the plurality of nanocores are exposed; heat-treating the plurality of nanocores after partially removing the mask; sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores to form a plurality of light emitting nanostructures, after the heat treatment; and planarizing upper parts of the plurality of light emitting nanostructures such that upper surfaces of the nanocores are exposed.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: November 29, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam-Goo Cha, Dong-Ho Kim, Geon-Wook Yoo