Abstract: Disclosed is an anticorrosion paint for preventing steel materials from corrosion by using polyaniline as an anticorrosion pigment. The anticorrosion paint has an excellent anticorrosion effect, long persistence of the anticorrosion effect, high durability and superior coating property controlling the anticorrosion effect, without using metal causing environmental pollution as an anticorrosion pigment. Especially, in the anticorrosion paint, the top coat paint for improving the protection of the primer coat paint and the anticorrosion effect. The top coat paint includes 40 to 89 wt % of matrix resin, 5 to 54 wt % of colored pigment, 1 to 50 wt % of dopants and 5 to 54 wt % of mixed solvents, and the primer coat paint includes 3 to 49 wt % of the polyaniline, 40 to 86 wt % of the matrix resin, 1 to 47 wt % of the dopants and 10 to 56 wt % of the mixed solvents. The anticorrosion paint plays a role in exerting persistently the excellent anticorrosion effect without causing environmental problem.

Abstract: A phase changeable memory device includes a substrate having a lower electrode disposed thereon. A phase changeable pattern is disposed on the lower electrode and an upper electrode is disposed on the phase changeable pattern that has a tip that extends therefrom and is directed toward the lower electrode.

Abstract: A phase changeable memory cell that includes a substrate, a bottom electrode, a phase changeable material layer pattern, and a top electrode. The bottom electrode is on the substrate. The phase changeable material layer pattern is on the bottom electrode. The top electrode is on the phase changeable material layer pattern, and has a tip that extends toward the bottom electrode.

Abstract: A phase-changeable memory device comprises a substrate and an access transistor formed in and/or on the substrate. Laterally spaced apart first and second conductive patterns are disposed on the substrate and have opposing sidewalls. A conductor electrically connects the first conductive region to a source/drain region of the access transistor. A phase-changeable material region is disposed between the first and second conductive patterns and contacts the opposing sidewalls of the first and second conductive patterns. Contact areas between the conductive patterns and the phase-changeable material region are preferably substantially smaller than contact areas at which the conductive patterns contact conductors (e.g., vias) connected thereto, such that high current densities may be developed in the phase-changeable material. Methods of fabricating such devices are also discussed.

Abstract: A reflective liquid crystal display device of the present invention includes: first and second substrates spaced apart from each other, the first and second substrates having sub-pixels; a liquid crystal layer interposed between the first and second substrates; a switching element and a pixel electrode on a rear surface of the second substrate, wherein the switching element and the pixel electrode are formed within a sub-pixel and electrically connected to each other; a retardation film and a polarizer formed in series on a front surface of the second substrate; a double-layered CCF on a front surface of the first substrate, the double-layered CCF including red, green and blue CLC color films in the sub-pixels that respectively reflect wavelengths of red, green and blue colored light so that the sub-pixels produce red, green and blue colors, respectively; and a common electrode on the double-layered CCF layer; wherein the double-layered CCF layer includes a first and second CLC layers, a first alignment layer

Abstract: Disclosed is an anticorrosion paint for preventing steel materials from corrosion by using polyaniline as an anticorrosion pigment. The anticorrosion paint has an excellent anticorrosion effect, long persistence of the anticorrosion effect, high durability and superior coating property controlling the anticorrosion effect, without using metal causing environmental pollution as an anticorrosion pigment. Especially, in the anticorrosion paint, the top coat paint for improving the protection of the primer coat paint and the anticorrosion effect. The top coat paint includes 40 to 89 wt % of matrix resin, 5 to 54 wt % of colored pigment, 1 to 50 wt % of dopants and 5 to 54 wt % of mixed solvents, and the primer coat paint includes 3 to 49 wt % of the polyaniline, 40 to 86 wt % of the matrix resin, 1 to 47 wt % of the dopants and 10 to 56 wt % of the mixed solvents. The anticorrosion paint plays a role in exerting persistently the excellent anticorrosion effect without causing environmental problem.

Abstract: A method of forming an HF power device. The method includes forming a semiconductor layer as a first conductive type on a semiconductor substrate; etching the semiconductor layer forming a first trench; doping an impurity in the neighborhood of the first trench forming a first impurity layer; burying a conduction film into the first trench; etching the semiconductor layer forming a second trench; forming a field oxide film buried into the second trench; forming a gate electrode on a surface of the semiconductor layer; forming a source on the surface of the semiconductor layer; forming a drain area on the surface of the semiconductor layer; forming an LLD area on the surface of the semiconductor layer between the drain area and the gate electrode; forming a first metal electrode; and forming a second metal electrode electrically connected to the LDD area.

Abstract: A liquid crystal display device having a cholesteric liquid crystal (CLC) color filter comprises a first substrate, a circular polarizer on the first substrate, a cholesteric liquid crystal (CLC) color filter on the circular polarizer, a first electrode on the cholesteric liquid crystal (CLC) color filter, a second substrate spaced apart from the first substrate, a second electrode beneath the second substrate, a liquid crystal layer between the first and second electrodes, a back light under the first substrate, a diffusive film on the second substrate, a retardation layer on the diffusive film, and a linear polarizer on the retardation layer.

Abstract: An HF power device in an HF transistor includes a semiconductor layer as a first conductive type, a field area formed in a trench structure on one side of the semiconductor layer, gate electrode formed on a given surface of the semiconductor layer, a channel layer as a second conductive type laterally diffused from the field area to a width containing both sides of the gate electrode, and formed on the surface of the semiconductor layer, a source area as the second conductive type formed within the channel layer between one side of the gate electrode and the field area, a drain area as the second conductive type formed on the surface of the semiconductor layer with a given interval from another side of the gate electrode, a sinker as the first conductive type provided as a column shape of a trench structure for dividing into two source areas by a piercing through the source area, and connected to the semiconductor layer, an LDD area as the second conductive type formed on the surface of the semiconductor laye

Abstract: An HF power device in an HF transistor includes a semiconductor layer as a first conductive type, a field area formed in a trench structure on one side of the semiconductor layer, gate electrode formed on a given surface of the semiconductor layer, a channel layer as a second conductive type laterally diffused from the field area to a width containing both sides of the gate electrode, and formed on the surface of the semiconductor layer, a source area as the second conductive type formed within the channel layer between one side of the gate electrode and the field area, a drain area as the second conductive type formed on the surface of the semiconductor layer with a given interval from another side of the gate electrode, a sinker as the first conductive type provided as a column shape of a trench structure for dividing into two source areas by a piercing through the source area, and connected to the semiconductor layer, an LDD area as the second conductive type formed on the surface of the semiconductor laye

Abstract: The present invention relates to a freezing system having two vaporizers for a refrigerator constructed as a single-loop cycle which is capable of using a genuine coolant as well as a mixed coolant by providing the coolant to a compressor after mixing the each coolant passed through a freezing chamber vaporizer and a chilling chamber vaporizer and heightening the pressure.

Abstract: The present invention relates to an optical integrated circuit; and, more particularly, to a method for preparing an improved hybrid optical integrated circuit which is capable of accommodating optical waveguides, optical devices, such as light emitting devices and light receiving devices, and optical fibers in an effective manner. The present invention has the advantages of minimizing horizontal misalignment error between the SOI waveguide rib area, the V-groove etch window and the alignment marks, decreasing the manufacturing cost by passively aligning the waveguides, the optical devices and the optical fibers on a single substrate. Also, the present invention has an effect of reducing fresnel reflection loss by providing the LPCVD silicon nitride layer capable of being used as an anti-reflection coating layer at both ends of the waveguide.

Abstract: An optical switch module for aligning and fixing an optical fiber array relative to an optical switch device includes an optical fiber support member for fixing the optical fiber array; a first support device forming a homo-junction with the optical fiber support member and including a first thermal deformation buffer device; and a second support device forming a hetero-junction with the first support device to support the first support device and including a second thermal deformation buffer device.

Abstract: Solid state image pickup device in which a horizontal charge coupled device (HCCD) region is divided into multi-channels so as to improve efficiency of charge-transferring and to widen its dynamic range is disclosed, including a plurality of photoelectric conversion regions; vertical charge coupled device (VCCD) regions for transferring in a vertical direction image charge generated in the photoelectric conversion regions; horizontal charge coupled device (HCCD) regions for dividing the image charge into one channel or two channel according to a level of the image charge transferred in a vertical direction and for transferring it in a horizontal direction; and a floating diffusion region for sensing only the image charge transferred through any one of the channels of the HCCD regions and draining the image charge transferred through the other channel without sensing it.

Abstract: The present invention relates to a method for manufacturing a polarization film for a liquid crystal display and, more particularly, to a method for manufacturing a polarization film having improved wide band characteristics and improved reflectivity by binding together plural liquid crystal films having different selective light-reflecting central wavelengths.

Abstract: A bidirectional horizontal charge transfer device and method includes a charge transfer area formed within a substrate, a plurality of first, second, third and fourth poly gates formed over the charge transfer area,an insulating layer formed between the first, second, third and fourth poly gates, a first clock signal applied to the first and second poly gates, a second clock signal applied to the third and fourth poly gates, and a biasing circuit for selectively applying a bias signal to the first and second clock signals so as to selectively change a charge transfer direction.

Abstract: Disclosed is a micromirror for a hybrid optoelectronic integrated circuit, a method for manufacturing the same, a micromirror-photodetector assembly and an assembly of hybrid optoelectronic integrated circuit for receiving light. The micromirror the present invention comprises a silicon substrate and at least one V-shaped groove formed in the silicon substrate and the V-shaped groove has an inclined surface reflecting light emitted from an optical waveguide to a photodetector. The alignment of the photodetector and the optical fibers is achieved without an additional attachment equipment, by inserting the optical fibers into the V-groove.

Abstract: A charge coupled device having a CCIR/EIA mode conversion function includes: a plurality of VCCD regions formed in the direction of row, the VCCD regions having a predetermined interval from one another; a plurality of HCCD regions formed at the end of the VCCD regions in the direction of column; a plurality of photodetectors regularly arranged between the VCCD regions, the photodetectors generating signal charges according to an image signal; a plurality of vertical gate electrodes formed on the VCCD regions and the photodetectors in the direction of column, the vertical gate electrodes transmitting the signal charges of the photodetectors to the HCCD regions through the VCCD regions according to applied vertical clock signals; vertical clock signal generator for supplying a predetermined number of vertical clock signals; and a selecting portion for receiving vertical clock signals from the vertical clock signal generator, the selecting portion supplying the vertical clock signals to part of the vertical gat

Abstract: An improved optical module having lenses aligned on a lens-positioning V-groove and a fabrication method thereof which includes a silicon substrate, which defines a light transfer path below a surface thereof, including light transferring V-grooves and a light receiving V-groove, and lens-positioning V-groove for determining the position of a lens, wherein two lens-positioning V-grooves are formed therein, an optical transmitter module including a laser which is a light source and is flip-chip-bonded to the substrate by a solder bump after an optical waveguide is previously aligned with the V-groove by using an alignment mark behind the vertical portion of the light transferring v-groove.

Abstract: A bidirectional horizontal charge transfer device and method includes a charge transfer area formed within a substrate, a plurality of first, second, third and fourth poly gates formed over the charge transfer area, an insulating layer formed between the first, second, third and fourth poly gates, a first clock signal applied to the first and second poly gates, a second clock signal applied to the third and fourth poly gates, and a biasing circuit for selectively applying a bias signal to the first and second clock signals so as to selectively change a charge transfer direction.