Patents by Inventor Nam Hwang

Nam Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8619407
    Abstract: There is provided a multilayered ceramic capacitor capable of being implementing as a micro supercapacitor capable of minimizing a mounting area and increasing a mounting efficiency thereof. The multilayered ceramic capacitor includes a capacitor body in which a plurality of dielectric layers having a size of 1.6 mm in length and 0.8 mm in width are stacked; an internal electrode unit having a plurality of internal electrodes arranged on each of the plurality of dielectric layers; and an external electrode unit, having a plurality of external electrodes horizontally arranged in the capacitor body and electrically connected to the internal electrodes.
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: December 31, 2013
    Assignee: Samsung Electro-Mechanics Co., Ltd
    Inventors: Tae Sung Si, Kyung Nam Hwang, Sang Mi Lee, Jong Hoon Bae
  • Publication number: 20130280882
    Abstract: A method of fabricating a semiconductor device is provided. The method includes forming semiconductor patterns on a semiconductor substrate, such that sides are surrounded by a lower interlayer insulating layer. A lower insulating layer is formed that covers the semiconductor patterns and the lower interlayer insulating layer. A contact structure is formed that penetrates the lower insulating layer and the lower interlayer insulating layer and is spaced apart from the semiconductor patterns. The contact structure has an upper surface higher than the semiconductor patterns. An upper insulating layer is formed covering the contact structure and the lower insulating layer. The upper and lower insulating layers form insulating patterns exposing the semiconductor patterns and covering the contact structure, and each of the insulating patterns includes a lower insulating pattern and an upper insulating pattern sequentially stacked.
    Type: Application
    Filed: April 22, 2013
    Publication date: October 24, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Young-Nam HWANG
  • Publication number: 20130209738
    Abstract: Disclosed are an artificial leather that comprises two or more types of short fibers made of different components and thus exhibits superior texture, flexibility, breathability and fullness and enables great weight reduction, and a method for manufacturing the same. The artificial leather includes a non-woven fabric having a fineness of 0.001 to 0.5 denier, and a polymeric elastomer impregnated in the non-woven fabric, wherein the short fibers are two or more types of polyester short fibers having different numbers of repeat units of —CH2—.
    Type: Application
    Filed: September 27, 2011
    Publication date: August 15, 2013
    Applicant: KOLON INDUSTRIES, INC.
    Inventors: Eung Min Lee, Jong Sue Jung, Jeong Nam Hwang, Jong Ho Park
  • Publication number: 20130088100
    Abstract: There is provided a linear vibrator, including: a fixed part providing an interior space having a predetermined size; at least one magnet disposed in the interior space and generating magnetic force; a vibration part including a coil facing the magnet and generating electromagnetic force through interaction with the magnet and a mass body; and an elastic member coupled to the fixed part and the vibration part to mediate vibrations of the vibration part and having a damping increasing portion attached to a predetermined region of a surface thereof.
    Type: Application
    Filed: January 18, 2012
    Publication date: April 11, 2013
    Inventors: Kyung Ho LEE, Young Nam Hwang, Po Chul Kim, Yong Jin Kim
  • Patent number: 8338910
    Abstract: Integrated circuit memory devices include a semiconductor word line having an electrically insulating strain layer directly contacting an upper surface thereof. The strain layer, which has a contact opening therein, has a sufficiently high degree of internal compressive strain therein to thereby impart a net tensile stress within at least a first portion of the semiconductor word line. A P-N junction diode is also provided on the semiconductor word line. The diode includes a first terminal (e.g., cathode, anode) electrically coupled through the opening in the strain layer to the surface of the semiconductor word line. A data storage element (e.g., MRAM, FRAM, PRAM, RRAM, etc.) may also be provided, which has a current carrying terminal electrically coupled to a second terminal of the p-n junction diode.
    Type: Grant
    Filed: March 28, 2011
    Date of Patent: December 25, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Young-nam Hwang
  • Patent number: 8320170
    Abstract: A multi-bit phase change memory device including a phase change material having a plurality of crystalline phases. A non-volatile multi-bit phase change memory device may include a phase change material in a storage node, wherein the phase change material includes a binary or ternary compound sequentially having at least three crystalline phases having different resistance values according to an increase of temperature of the phase change material.
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: November 27, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-nam Hwang, Soon-oh Park, Hong-sik Jeong, Gi-tae Jeong
  • Patent number: 8308531
    Abstract: Disclosed are a polishing pad used in a CMP process of a planar material such as a silicon wafer, plate glass for a display, etc. and a method for manufacturing the same. The polishing pad comprises a non-woven fabric consisting of ultrafine fibers and elastomeric polymer impregnated into the fabric, on which the ultrafine fibers are raised and arranged to simultaneously satisfy the following conditions (I) to (III) such that the ultrafine fibers are oriented in a longitudinal direction to a central axis: The polishing pad of the present invention includes ultrafine fibers, which are arranged at a relatively wide orientation angle and have pores formed therebetween without requiring alternative processes for forming the pores, thus, exhibits excellent polishing performance and low occurrence of scratches during a polishing process.
    Type: Grant
    Filed: June 28, 2008
    Date of Patent: November 13, 2012
    Assignee: Kolon Industries, Inc.
    Inventors: Won-Joon Kim, Yeong-Nam Hwang
  • Patent number: 8287158
    Abstract: Disclosed is a cover plate for a lighting fixture and a lighting fixture having the same, which achieves superior light diffusivity and light uniformity as well as superior light transmission in comparison with the prior art, thereby improving a luminance characteristic. The cover plate is arranged at an exterior of an light source of the light fixture so as to exit lighting emitted from the light source outward. The cover plate is made of light transmissive resin material having 5-35% of bubbles for light scattering, which has a diameter within a range of 60 ?m˜700 ?m, and exits light emitted from the light source while diffusing the light to the whole area of the cover plate.
    Type: Grant
    Filed: October 23, 2007
    Date of Patent: October 16, 2012
    Assignee: GL Korea Co., Ltd.
    Inventor: Cheon Nam Hwang
  • Publication number: 20120134066
    Abstract: There is provided a multi-layered ceramic capacitor having a dual layer-electrode structure formed by applying a dual layer of electrode paste to the multi-layered ceramic capacitor. The multi-layered ceramic capacitor having a dual layer-electrode structure includes a capacitor body having a preset length and width and having a plurality dielectric layers stacked therein, an internal electrode unit formed on the plurality of dielectric layers and having a preset capacitance, and an external electrode unit including first external electrodes respectively formed on both sides of the capacitor body to be electrically connected to internal electrodes, and second external electrodes formed on the first external electrodes.
    Type: Application
    Filed: November 22, 2011
    Publication date: May 31, 2012
    Inventors: Hyun Tae KIM, Jin Ju PARK, Se Hyun KIM, Doo Young KIM, Kyung Nam HWANG
  • Publication number: 20120135653
    Abstract: Disclosed is an artificial leather containing a non-woven fabric composed of ultra micro fibers and impregnated with an polymeric elastomer, wherein a residual shrinkage ratio of the artificial leather at 30% stretching is 10% or less in a machine direction and is 20% or less in a cross-machine direction. The artificial leather has optimal residual shrinkage ratios, and specifically a residual shrinkage ratio in a machine direction of 10% or less and a residual shrinkage ratio in a cross-machine direction of 20% or less, when the artificial leather is stretched by 30%. As a result, the artificial leather which has stretched during the process for shape-formation can easily contract and restore, and thus avoid creasing even when applied to the products having many curved parts.
    Type: Application
    Filed: June 3, 2010
    Publication date: May 31, 2012
    Applicant: KOLON INDUSTRIES, INC.
    Inventors: Yeong Nam Hwang, Won Jun Kim, Jong Ho Park
  • Publication number: 20120134067
    Abstract: There is provided a multilayered ceramic capacitor capable of being implementing as a micro supercapacitor capable of minimizing a mounting area and increasing a mounting efficiency thereof. The multilayered ceramic capacitor includes a capacitor body in which a plurality of dielectric layers having a size of 1.6 mm in length and 0.8 mm in width are stacked; an internal electrode unit having a plurality of internal electrodes arranged on each of the plurality of dielectric layers; and an external electrode unit, having a plurality of external electrodes horizontally arranged in the capacitor body and electrically connected to the internal electrodes.
    Type: Application
    Filed: February 10, 2011
    Publication date: May 31, 2012
    Inventors: Tae Sung SI, Kyung Nam Hwang, Sang Mi Lee, Jong Hoon Bae
  • Publication number: 20120050939
    Abstract: A multi-layered ceramic capacitor (MLCC) includes: a multi-layered capacitor main body formed by stacking a plurality of dielectric layers and having a size of 0.9 mm in width and 0.6 mm in length; two inner electrodes formed on each of the plurality of dielectric layers, an inner interval therebetween being 70 ?m or smaller and an outer interval between the inner electrode and an edge of the dielectric layer being 60 ?m or smaller; and a plurality of outer electrodes formed on an outer surface of the capacitor main body and electrically connected to the inner electrodes. An ultra-high capacitor can be implemented and the reliability of the product can be improved by optimizing an inner area of a 0906 size array.
    Type: Application
    Filed: January 26, 2011
    Publication date: March 1, 2012
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD
    Inventors: Tae Sung SI, Kyung Nam HWANG, Tai Won CHOI
  • Publication number: 20120009839
    Abstract: Artificial leather with optimal elongation and a method for manufacturing the same is disclosed, the artificial leather comprising a non-woven fabric with micro-fibers and a polymeric elastomer impregnated into the non-woven-fiber, wherein the polymeric elastomer is 20 to 30% by weight with respect to a total weight of the artificial leather, and a density of the non-woven fabric is within the range of 0.160 to 0.250g/cm3, wherein the artificial leather can be easily used for the goods with lots of flexed regions, for example, the headliner of vehicle.
    Type: Application
    Filed: December 31, 2009
    Publication date: January 12, 2012
    Applicant: KOLON INDUSTRIES, INC.
    Inventors: Yeong Nam Hwang, Dong Tak Kim, Won Jun Kim
  • Publication number: 20110254103
    Abstract: Integrated circuit memory devices include a semiconductor word line having an electrically insulating strain layer directly contacting an upper surface thereof. The strain layer, which has a contact opening therein, has a sufficiently high degree of internal compressive strain therein to thereby impart a net tensile stress within at least a first portion of the semiconductor word line. A P-N junction diode is also provided on the semiconductor word line. The diode includes a first terminal (e.g., cathode, anode) electrically coupled through the opening in the strain layer to the surface of the semiconductor word line. A data storage element (e.g., MRAM, FRAM, PRAM, RRAM, etc.) may also be provided, which has a current carrying terminal electrically coupled to a second terminal of the p-n junction diode.
    Type: Application
    Filed: March 28, 2011
    Publication date: October 20, 2011
    Inventor: Young-nam Hwang
  • Patent number: 8026543
    Abstract: A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation. In one embodiment, a semiconductor memory device includes a molding layer disposed over semiconductor substrate, a phase-changeable material pattern, and an oxidation barrier of electrically insulative material. The molding layer has a protrusion at its upper portion. One portion of the phase-changeable material pattern overlies the protrusion of the molding layer, and another portion of the phase-changeable material pattern extends through the protrusion. The electrically insulative material of the oxidation barrier may cover the phase-changeable material pattern and/or extend along and cover the entire area at which the protrusion of the molding layer and the portion of the phase-change material pattern disposed on the protrusion adjoin.
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: September 27, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yoon-Jong Song, Young-Nam Hwang, Sang-Don Nam, Sung-Lae Cho, Gwan-Hyeob Koh, Choong-Man Lee, Bong-Jin Kuh, Yong-Ho Ha, Su-Youn Lee, Chang-Wook Jeong, Ji-Hye Yi, Kyung-Chang Ryoo, Se-Ho Lee, Su-Jin Ahn, Soon-Oh Park, Jang-Eun Lee
  • Patent number: 7969798
    Abstract: A variable resistance memory device includes a memory cell connected to a bit line and a clamp circuit configured to provide either a first read voltage or a second read voltage to the bit line according to an elapsed time from a write operation of the memory cell. Related methods are also described.
    Type: Grant
    Filed: April 28, 2009
    Date of Patent: June 28, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Nam Hwang, Dae-Hwan Kang, Chang-Yong Um
  • Patent number: 7910398
    Abstract: In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.
    Type: Grant
    Filed: February 6, 2009
    Date of Patent: March 22, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Tae Kim, Young-Nam Hwang, Tai-Kyung Kim, Won-Young Chung, Keun-Ho Lee
  • Patent number: 7896997
    Abstract: A composite sheet used for artificial leather with low elongation and excellent softness which includes a non-woven fabric layer, a woven or knitted fabric layer and a polyurethane resin, wherein the non-woven fabric layer and the woven or knitted fabric layer are entangled with each other.
    Type: Grant
    Filed: March 6, 2007
    Date of Patent: March 1, 2011
    Assignee: Kolon Industries Inc.
    Inventors: Young-Nam Hwang, Won-Jun Kim, Jae-Hoon Chung
  • Publication number: 20100284125
    Abstract: Provided is a method of manufacturing a nanowire capacitor including forming a lower metal layer on a substrate; growing conductive nanowires on the lower metal layer, the conductive nanowires including metal and transparent electrodes; depositing a dielectric layer on the lower metal layer including the grown conductive nanowires; growing dielectric nanowires on the deposited dielectric layer; and depositing an upper metal layer on the dielectric layer including the grown dielectric nanowires.
    Type: Application
    Filed: October 19, 2007
    Publication date: November 11, 2010
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Won Ha MOON, Chang Hwan CHOI, Chul Tack LIM, Young Nam HWANG
  • Patent number: 7820569
    Abstract: A composite sheet used for artificial leather with low elongation and excellent softness which includes a non-woven fabric layer, a woven or knitted fabric layer and a polyurethane resin, wherein the non-woven fabric layer and the woven or knitted fabric layer are entangled with each other.
    Type: Grant
    Filed: January 29, 2003
    Date of Patent: October 26, 2010
    Assignee: Kolon Industries Inc.
    Inventors: Young-Nam Hwang, Won-Jun Kim, Jae-Hoon Chung