Abstract: An embodiment apparatus for predicting traffic flow on a new road includes a memory, an input device, and a controller configured to input traffic data corresponding to a default context of the new road received by the input device to a prediction model stored in the memory, training of which is completed, and to predict a traffic flow corresponding to various contexts of the new road based on the prediction model.

Abstract: Provided is a cluster node recommendation system. A method of controlling the cluster node recommendation system includes: inputting user selection information from a user, the user selection information including at least one of a cloud vendor, an Information Technology (IT) resource size, and a free resource size; checking resource requirements of a designated application; outputting a node configuration by inputting the input user selection information and the checked resource requirements of the application to an artificial intelligence module; verifying validity by arranging a container in which the application is executed, in the output node configuration; and providing a final node configuration in which validity verification is made, to the user.

Abstract: The present disclosure relates to a simulation apparatus for secondary battery production.

Abstract: Disclosed is an organic light emitting display device, and more particularly, an organic light emitting display device having a fence structure between a pixel region and which covers edge or peripheral portions of adjacent first electrodes that include an anode. The organic light emitting display device increases isolation characteristics by preventing crosstalk between adjacent pixel regions, and prevents certain defects that may occur during subsequent processing (e.g., following formation of a reflective electrode).

Abstract: The present invention relates to a shift-by-wire (SBW) device and, more specifically, to an actuator and reduction gear structure of a shift-by-wire device. A shift-by-wire device according to the present invention comprises: a housing; a motor which generates torque by means of an applied current; a hollow rotor shaft; a reduction gear which receives the transmission of the torque of the motor, converts same and transmits same to an output; an output shaft which passes through inside the rotor shaft, has an encoder magnet provided on one end thereof, has the other end directly connected to a manual shaft, and transmits the torque increased by means of the reduction gear to a detent plate; and a controller disposed inside the housing and for detecting the position of the output from the encoder magnet.

Abstract: The present disclosure provides a skyrmion diode using skyrmions as information carriers. The skyrmion diode includes a magnetic body and a conductive body. The magnetic body has a skyrmion which is used as information carrier. The conductive body is disposed on or under the magnetic body. The conductive body includes a Dzyaloshinskii-Moriya interaction (DMI) region and a defect region. The DMI region is provided to induce DMI in a region of the magnetic body corresponding to the DMI region by the spin-orbit coupling of the conductive body and magnetic moments of the magnetic body. The defect region is provided to prevent the DMI from being induced in a region of the magnetic body corresponding to the defect region.

Abstract: The present invention relates to a shift-by-wire (SBW) device and, more specifically, to an actuator and reduction gear structure of a shift-by-wire device. A shift-by-wire device according to the present invention comprises: a housing; a motor which generates torque by means of an applied current; a hollow rotor shaft; a reduction gear which receives the transmission of the torque of the motor, converts same and transmits same to an output; an output shaft which passes through inside the rotor shaft, has an encoder magnet provided on one end thereof, has the other end directly connected to a manual shaft, and transmits the torque increased by means of the reduction gear to a detent plate; and a controller disposed inside the housing and for detecting the position of the output from the encoder magnet.

Abstract: A semiconductor device has a silicide source/drain region is fabricated by growing silicon on an epitaxial region including silicon and either germanium or carbon. In the method, a gate electrode is formed on a semiconductor substrate with a gate insulating layer interposed therebetween. An epitaxial layer is formed in the semiconductor substrate at both sides of the gate electrodes. A silicon layer is formed to cap the epitaxial layer. The silicon layer and a metal material are reacted to form a silicide layer. In a PMOS, the epitaxial layer has a top surface and inclined side surfaces that are exposed above the upper surface of the active region. The silicon layer is grown on the epitaxial layer in such a way as to cap the top and inclined surfaces.

Abstract: A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.

Abstract: The present disclosure provides a skyrmion diode using skyrmions as information carriers. The skyrmion diode includes a magnetic body and a conductive body. The magnetic body has a skyrmion which is used as information carrier. The conductive body is disposed on or under the magnetic body. The conductive body includes a Dzyaloshinskii-Moriya interaction (DMI) region and a defect region. The DMI region is provided to induce DMI in a region of the magnetic body corresponding to the DMI region by the spin-orbit coupling of the conductive body and magnetic moments of the magnetic body. The defect region is provided to prevent the DMI from being induced in a region of the magnetic body corresponding to the defect region.

Abstract: The present disclosure provides a skyrmion diode using skyrmions as information carriers. The skyrmion diode includes a magnetic body and a conductive body. The magnetic body has a skyrmion which is used as information carrier. The conductive body is disposed on or under the magnetic body. The conductive body includes a Dzyaloshinskii-Moriya interaction (DMI) region and a defect region. The DMI region is provided to induce DMI in a region of the magnetic body corresponding to the DMI region by the spin-orbit coupling of the conductive body and magnetic moments of the magnetic body. The defect region is provided to prevent the DMI from being induced in a region of the magnetic body corresponding to the defect region.

Abstract: A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.

Abstract: A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.

Abstract: A semiconductor device has a silicide source/drain region is fabricated by growing silicon on an epitaxial region including silicon and either germanium or carbon. In the method, a gate electrode is formed on a semiconductor substrate with a gate insulating layer interposed therebetween. An epitaxial layer is formed in the semiconductor substrate at both sides of the gate electrodes. A silicon layer is formed to cap the epitaxial layer. The silicon layer and a metal material are reacted to form a silicide layer. In a PMOS, the epitaxial layer has a top surface and inclined side surfaces that are exposed above the upper surface of the active region. The silicon layer is grown on the epitaxial layer in such a way as to cap the top and inclined surfaces.

Abstract: A semiconductor device has a silicide source/drain region is fabricated by growing silicon on an epitaxial region including silicon and either germanium or carbon. In the method, a gate electrode is formed on a semiconductor substrate with a gate insulating layer interposed therebetween. An epitaxial layer is formed in the semiconductor substrate at both sides of the gate electrodes. A silicon layer is formed to cap the epitaxial layer. The silicon layer and a metal material are reacted to form a silicide layer. In a PMOS, the epitaxial layer has a top surface and inclined side surfaces that are exposed above the upper surface of the active region. The silicon layer is grown on the epitaxial layer in such a way as to cap the top and inclined surfaces.

Abstract: An apparatus and method of controlling an electronic continuously variable valve timing (CVVT) is provided. The apparatus includes a sensor disposed in a motor facing a reducer and an intelligent motor controller. The sensor determines a rotation speed of a first and second projection of a first and second rotation member and generates a sensing signal that corresponds to an output waveform of each rotation speed and inputs the signal to an intelligent motor controller coupled to the motor. The intelligent motor controller receives the signal and separates a crank shaft and cam shaft position signal. The signals are compared to detect an actual phase angle of the suction or exhaust valve. A phase deviation between the detected, actual and predetermined target phase angle is calculated.