Abstract: A method of encrypting data, performed by a computer system includes: dividing transmission target data into an arbitrary number of blocks; selecting an encryption key generation target block to be used for extracting an encryption key from among the plurality of divided blocks; generating an encryption key based on the encryption key generation target block; selecting an encryption target block from among remaining blocks excluding the encryption key generation target block; and encrypting the encryption target block based on the generated encryption key.

Abstract: The present disclosure provides a method for manufacturing a Mn—Bi based sintered magnet with a simple process and a Mn—Bi based sintered magnet having excellent magnetic properties such as maximum magnetic energy product manufactured therefrom.

Abstract: The present disclosure provides a method for preparing a Mn—Bi based resin magnet, which can provide a Mn—Bi based resin magnet with excellent magnetic properties by forming a polymer coating on the surface of a Mn—Bi based magnetic phase powder, and a Mn—Bi based resin magnet prepared therefrom.

Abstract: Disclosed are a high voltage semiconductor device and a method of manufacturing the same and, more particularly, a high voltage semiconductor device and a method of manufacturing the same seeking to shorten a path of excess carriers to a body contact and improve breakdown voltage (BV) characteristics accordingly, in addition to minimizing a separation distance between adjacent gate electrodes and improving specific on-resistance (Rsp) characteristics accordingly, by including a plurality of spaced apart body contacts in a body region and offset from each other along a horizontal direction in the semiconductor device.

Abstract: A substrate treating apparatus includes: a spin chuck supporting a substrate; a rinse liquid supply unit supplying a rinse liquid; a first bowl including an inclined surface inclined downward in an outward direction of the spin chuck; and a guide part provided on the inclined surface of the first bowl so as to form a spiral surrounding the spin chuck and guiding a flow of the rinse liquid along the spiral.

Abstract: A substrate treating apparatus includes: a spin chuck supporting a substrate; a rinse liquid supply unit supplying a rinse liquid; and a bowl member surrounding the spin chuck, wherein the bowl member includes: a first bowl including an inclined surface inclined downward in an outward direction and having an upper surface of which at least a portion has a curvature; and an upper base disposed on the first bowl, a space between the upper surface of the first bowl and a lower surface of the upper base forms a first flow passage and at least a portion of the first flow passage is formed in an arc shape along the upper surface of the first bowl, and the rinse liquid is supplied toward the inclined surface of the first bowl through the first flow passage.

Abstract: Disclosed is an organic light emitting display device, and more particularly, an organic light emitting display device having a fence structure between a pixel region and which covers edge or peripheral portions of adjacent first electrodes that include an anode. The organic light emitting display device increases isolation characteristics by preventing crosstalk between adjacent pixel regions, and prevents certain defects that may occur during subsequent processing (e.g., following formation of a reflective electrode).

Abstract: The present invention relates to a shift-by-wire (SBW) device and, more specifically, to an actuator and reduction gear structure of a shift-by-wire device. A shift-by-wire device according to the present invention comprises: a housing; a motor which generates torque by means of an applied current; a hollow rotor shaft; a reduction gear which receives the transmission of the torque of the motor, converts same and transmits same to an output; an output shaft which passes through inside the rotor shaft, has an encoder magnet provided on one end thereof, has the other end directly connected to a manual shaft, and transmits the torque increased by means of the reduction gear to a detent plate; and a controller disposed inside the housing and for detecting the position of the output from the encoder magnet.

Abstract: The present disclosure provides a skyrmion diode using skyrmions as information carriers. The skyrmion diode includes a magnetic body and a conductive body. The magnetic body has a skyrmion which is used as information carrier. The conductive body is disposed on or under the magnetic body. The conductive body includes a Dzyaloshinskii-Moriya interaction (DMI) region and a defect region. The DMI region is provided to induce DMI in a region of the magnetic body corresponding to the DMI region by the spin-orbit coupling of the conductive body and magnetic moments of the magnetic body. The defect region is provided to prevent the DMI from being induced in a region of the magnetic body corresponding to the defect region.

Abstract: The present invention relates to a shift-by-wire (SBW) device and, more specifically, to an actuator and reduction gear structure of a shift-by-wire device. A shift-by-wire device according to the present invention comprises: a housing; a motor which generates torque by means of an applied current; a hollow rotor shaft; a reduction gear which receives the transmission of the torque of the motor, converts same and transmits same to an output; an output shaft which passes through inside the rotor shaft, has an encoder magnet provided on one end thereof, has the other end directly connected to a manual shaft, and transmits the torque increased by means of the reduction gear to a detent plate; and a controller disposed inside the housing and for detecting the position of the output from the encoder magnet.

Abstract: A semiconductor device has a silicide source/drain region is fabricated by growing silicon on an epitaxial region including silicon and either germanium or carbon. In the method, a gate electrode is formed on a semiconductor substrate with a gate insulating layer interposed therebetween. An epitaxial layer is formed in the semiconductor substrate at both sides of the gate electrodes. A silicon layer is formed to cap the epitaxial layer. The silicon layer and a metal material are reacted to form a silicide layer. In a PMOS, the epitaxial layer has a top surface and inclined side surfaces that are exposed above the upper surface of the active region. The silicon layer is grown on the epitaxial layer in such a way as to cap the top and inclined surfaces.

Abstract: A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.