Abstract: A method of fabricating an electronic device having stacked chips is provided. The method includes forming a plurality of chips arranged in a row direction and at least one chip arranged in a column direction. A molding layer is formed between the chips. Grooves are formed in the molding layer between the chips arranged in the row direction. Conductive interconnections are formed on the substrate having the grooves. The substrate is sawn along an odd- or even-numbered one of the grooves to be separated into a plurality of unit substrates. At least one of the separated unit substrates is folded along an unsawn groove of the grooves.

Abstract: Provided is a stacked chip package and a method for forming the same. A spacer is formed on a side of an upper chip. A conductive line is formed on the spacer to electrically connect upper and lower chips. The reliability of the stacked chip package is improved because wire bonding is not used to electrically connect the upper and lower chips. Further, the overall size of the stacked chip package can be reduced as the height of bonding wire loops does not contribute to the overall stacked chip package height.

Abstract: A method of fabricating a semiconductor chip package, in which a protection layer is formed on a scribe lane of a wafer including a plurality of semiconductor chips, an encapsulation layer is formed on the semiconductor chips and the protection layer, and at least two types of lasers having different respective wavelengths are sequentially irradiated to the scribe lane so as to separate the semiconductor chips. Therefore, the wafer can be protected from the laser that is used to saw the encapsulation layer.

Abstract: The probe card is comprised of a probe card wafer, a plurality of through via electrodes penetrating the probe card wafer; and a plurality of redistributed wiring probe needle structures, each being connected to the through via electrodes protruding from a surface of the probe card wafer.

Abstract: A semiconductor memory device has a hierarchical bit line structure. The semiconductor memory device may include first and second memory cell clusters, which share the same bit line pair and are divided operationally; third and fourth memory cell clusters, which are connected respectively corresponding to word lines coupled with the first and second memory cell clusters, and which share a bit line pair different from the bit line pair and are divided operationally; and a column pass gate for switching one of bit line pairs connected with the first to fourth memory cell clusters, to a common sense amplifier, in response to a column selection signal. Whereby an operating speed decrease caused by load of peripheral circuits connected to the bit line is improved, and the number of column pass gates is reduced substantially with a reduction of chip size.

Abstract: Provided is a semiconductor package with enhanced joint reliability and methods of fabricating the same. The method includes: forming package units including a semiconductor chip interposed between a bottom layer and a top layer; and sequentially stacking the package units on a substrate. The bottom layer and the top layer are formed of a material having a lower modulus than the semiconductor chip. The semiconductor package includes: at least one package unit disposed on a substrate, the package unit including a semiconductor chip having a pad, a bottom layer and a top layer substantially surrounding the semiconductor chip, and a redistribution structure overlying the top layer. The redistribution structure is electrically connected to the pad.

Abstract: A semiconductor package and module, and methods of fabricating the same are provided. A method of fabricating a semiconductor package may include bonding rear surfaces of first and second semiconductor chips to each other, each of the semiconductor chips having chip pads exposed on front surfaces. The method may also include forming an encapsulation portion configured to encapsulate side surfaces of the bonded semiconductor chips, forming via plugs configured to pass through the encapsulation portion, forming an insulating layer configured to expose surfaces of the chip pads and the via plugs on the exposed surfaces of the two semiconductor chips and surfaces of the encapsulation portion, and forming package pads on the exposed surfaces of the chip pads and the surfaces of the via plugs.

Abstract: Provided are semiconductor device packages and methods for fabricating the same. In some embodiments, the method includes providing a semiconductor chip on a substrate with through electrodes formed in the substrate, and providing a capping layer on the substrate to receive the semiconductor chip in a recess formed in the capping layer. The capping layer is coupled to the substrate by a bonding layer formed on the substrate, and the capping layer covers the semiconductor chip provided on the substrate. The processing of the substrate and the capping layer can be separately performed, thus allowing the material for the capping layer and/or the substrate to be selected to reduce (e.g., to minimize) a difference between the thermal expansion coefficients of the capping layer material and the substrate material.

Abstract: A method of forming a solder bump may involve forming a first photoresist pattern on a wafer having a pad. The first photoresist pattern may have an opening that exposes a portion of the pad. A first under bump metallurgy (UBM) layer may be formed on the pad, and a second UBM layer may be formed on the first photoresist pattern. A second photoresist pattern may be formed that exposes the first UBM layer. A solder bump may be formed in the opening. The second photoresist pattern and the first photoresist pattern may be removed using a stripper, thereby removing the second UBM layer by a lift-off method.

Abstract: A phase interpolation circuit and method are provided that are capable of operating in a low voltage and capable of generating a substantially exact phase-interpolation signal, where the phase interpolation circuit is configured to output a phase interpolation signal having a phase between phases of at least two input signals and comprises an interpolation unit configured to discharge an output node by a first interpolation control signal in case a first input signal of two input signals having different phases is inputted to the interpolation unit when the output node has been precharged to a power supply voltage level, the interpolation unit additionally discharging the output node by a second interpolation control signal in case of input of a second input signal of the two input signals; a comparison unit for comparing a reference voltage level and a voltage level of the output node of the interpolation unit to output a signal corresponding to the comparison; and a short pulse generation unit for generatin

Abstract: A semiconductor memory device has a hierarchical bit line structure. The semiconductor memory device may include first and second memory cell clusters, which share the same bit line pair and are divided operationally; third and fourth memory cell clusters, which are connected respectively corresponding to word lines coupled with the first and second memory cell clusters, and which share a bit line pair different from the bit line pair and are divided operationally; and a column pass gate for switching one of bit line pairs connected with the first to fourth memory cell clusters, to a common sense amplifier, in response to a column selection signal. Whereby an operating speed decrease caused by load of peripheral circuits connected to the bit line is improved, and the number of column pass gates is reduced substantially with a reduction of chip size.

Abstract: A semiconductor memory device has a hierarchical bit line structure. The semiconductor memory device may include first and second memory cell clusters, which share the same bit line pair and are divided operationally; third and fourth memory cell clusters, which are connected respectively corresponding to word lines coupled with the first and second memory cell clusters, and which share a bit line pair different from the bit line pair and are divided operationally; and a column pass gate for switching one of bit line pairs connected with the first to fourth memory cell clusters, to a common sense amplifier, in response to a column selection signal. Whereby an operating speed decrease caused by load of peripheral circuits connected to the bit line is improved, and the number of column pass gates is reduced substantially with a reduction of chip size.

Abstract: Provided is a semiconductor device and a method of fabricating the same. The method of fabricating the semiconductor device includes forming a mask pattern having an opening corresponding to an electrode pad formed on a semiconductor substrate; forming a bump by filling the opening with a conductive first material; forming a sidewall film on sidewalls of the bump using a second material; forming a connection member between an upper surface of the bump and a wire substrate using a conductive third material in order to electrically connect the bump and the wire substrate; and forming an underfill resin between the wire substrate and the semiconductor substrate, wherein a wetting angle between the second material and the third material is greater than that between the first material and the third material.

Abstract: Provided are a semiconductor package, an electronic device including the semiconductor package and a method of manufacturing the semiconductor package. The semiconductor package includes semiconductor chips mounted on a carrier, a first insulating layer sealing the semiconductor chips, first via-holes which are formed in the first insulating layer and expose a portion of each of the semiconductor chips, a first conductive pattern which is filled in the first via-holes and electrically connected to each of the semiconductor chips, and an external terminal which is electrically connected to the first conductive pattern. The semiconductor package is manufactured by performing an encapsulating process and a via-hole process.

Abstract: A semiconductor module may include a circuit substrate with a first die on the circuit substrate and a second die on the first die. The first die may include at least one first data input/output pad on a first peripheral portion of the first die and at least one first control/address pad on a third peripheral portion, the third peripheral portion being separate from the first peripheral portion of the first die. The second die may include at least one second data input/output pad on a second peripheral portion and at least one second control/address pad on a fourth peripheral portion. The second peripheral portion of the second die is not overlapped with the first peripheral portion of the first die in plan view. The fourth peripheral portion of the second die overlaps at least a portion of the third peripheral portion of the first die.

Abstract: A semiconductor memory device has a hierarchical bit line structure. The semiconductor memory device may include first and second memory cell clusters, which share the same bit line pair and are divided operationally; third and fourth memory cell clusters, which are connected respectively corresponding to word lines coupled with the first and second memory cell clusters, and which share a bit line pair different from the bit line pair and are divided operationally; and a column pass gate for switching one of bit line pairs connected with the first to fourth memory cell clusters, to a common sense amplifier, in response to a column selection signal. Whereby an operating speed decrease caused by load of peripheral circuits connected to the bit line is improved, and the number of column pass gates is reduced substantially with a reduction of chip size.

Abstract: A semiconductor device having a through electrode and a method of fabricating the same are disclosed. In one embodiment, a semiconductor device includes a first insulating layer formed on a semiconductor substrate. A wiring layer having a first aperture to expose a portion of the first insulating layer is formed on the first insulating layer. A second insulating layer is formed on an upper portion of the wiring layer and in the first aperture. A conductive pad having a second aperture to expose a portion of the second insulating layer is formed on the second insulating layer. A through hole with a width narrower than widths of the first and second apertures is formed through the first and second insulating layers and an upper portion of the semiconductor substrate. A through electrode is formed in the through hole.

Abstract: Provided is a semiconductor package with enhanced joint reliability and methods of fabricating the same. The method includes: forming package units including a semiconductor chip interposed between a bottom layer and a top layer; and sequentially stacking the package units on a substrate. The bottom layer and the top layer are formed of a material having a lower modulus than the semiconductor chip. The semiconductor package includes: at least one package unit disposed on a substrate, the package unit including a semiconductor chip having a pad, a bottom layer and a top layer substantially surrounding the semiconductor chip, and a redistribution structure overlying the top layer. The redistribution structure is electrically connected to the pad.

Abstract: A chip stack package is provided, wherein semiconductor chips having different die sizes are stacked by arranging pads in a scribe region through a redistribution process, so that the thickness of the package can be reduced. A method of fabricating the chip stack package is also provided. In the chip stack package, a plurality of circuit patterns are arranged on one surface of a substrate, and a unit semiconductor chip is mounted thereon. The unit semiconductor chip includes a plurality of semiconductor chips sequentially stacked on the substrate. The semiconductor chips of the unit semiconductor chip have different die sizes. One of the semiconductor chips includes a plurality of first pads arranged in a first chip region, and the other semiconductor chips include second pads arranged in a scribe region at an outside of a second chip region defined by the scribe region.

Abstract: A chip stack package includes a substrate, a plurality of chips, a plurality of adhesive layers and a plug. The substrate has a wiring pattern and a seed layer formed on the wiring pattern. Each of the chips has an electrode pad and a first through-hole that penetrates the electrode pad. The chips are stacked such that the first through-holes are aligned on the seed layer of the substrate. The adhesive layers are interposed between the substrate and one of the chips, as well as between the chips. Each of the adhesive layers has a second through-hole connected to the first through-hole. The plug fills up the first through-holes and the second through-holes and electrically connects the electrode pads to the wiring pattern of the substrate. A cross-sectional area of the plug in the second through-holes may be larger than that of the plug in the first through-holes.