Abstract: A communication system retrieves profile data corresponding to a user profile of a second user, identifies a status message in the profile data, display, via a user interface of the instant messenger application, the status message; in response to receiving, via the user interface, a user input associated with the status message: query, based on the status message, a database to identify one or more items, and display, via the user interface of the instant messenger application, item data corresponding to the one or more items, receive, via the user interface, a user input associated with the one or more items, instantiate a transaction authentication of the one or more items by causing transmission of transaction information data associated with the first user, and cause, based on the transaction authentication of the one or more items, delivery of the one or more items to an account of the second user.

Abstract: An apparatus and method for multiplexing signals using layered division multiplexing are disclosed. A signal multiplexing apparatus according to an embodiment of the present invention includes a combiner configured to combine a core layer signal and an enhanced layer signal at different power levels, and a time interleaver configured to perform interleaving applied to both the core layer signal and the enhanced layer signal.

Abstract: An apparatus for transmitting a broadcast signal according to an embodiment of the present invention includes a bootstrap generation unit for generating a bootstrap for signaling a system bandwidth field, corresponding to a system bandwidth for a post-bootstrap, and a baseband sampling rate coefficient; a preamble generation unit for generating a preamble located immediately following the bootstrap in a broadcast signal frame; and a payload generation unit for generating one or more subframes located immediately following the preamble in the broadcast signal frame. Here, the preamble may include L1 signaling data, and the L1 signaling data may include a reduced carrier coefficient.

Abstract: An embodiment method of recognizing a parking floor for a vehicle includes recognizing a spot at which the vehicle enters a parking deck, obtaining an inclination signal indicating an inclination trajectory of the vehicle traveling during a parking period from entry to the parking deck to parking, obtaining an inclination pulse of the inclination signal based on a reference inclination value, and determining a floor number of the parking deck on which the vehicle is parked using the inclination pulse.

Abstract: A bit interleaver, a bit-interleaved coded modulation (BICM) device and a bit interleaving method are disclosed herein. The bit interleaver includes a first memory, a processor, and a second memory. The first memory stores a low-density parity check (LDPC) codeword having a length of 64800 and a code rate of 7/15. The processor generates an interleaved codeword by interleaving the LDPC codeword on a bit group basis. The size of the bit group corresponds to a parallel factor of the LDPC codeword. The second memory provides the interleaved codeword to a modulator for quadrature phase shift keying (QPSK) modulation.

Abstract: Provided is a method of operating a terminal. The method includes determining a profile item applicable to the profile view for the account based on an input received by the terminal and a coordinate indicating a position where the profile item is provided on the profile view. The method includes displaying the profile item on a screen of the terminal based on the determined profile item and the determined coordinate. The method includes receiving an input related to the profile item, and displaying a visual effect corresponding to the input on the screen.

Abstract: An apparatus for determining a short cut-in target includes a processor, wherein the processor is configured to generate a ROI on a grid map by use of sensor information provided from a Light Detection and Ranging (LiDAR) sensor mounted on a vehicle, sets a cut-in reference line based on a sensor information on the generated grid map, and is configured to control to adjust a dynamic object fusion (DOF) track based on the set cut-in reference line.

Abstract: The present invention relates to a novel use of an antibody biding specifically to the N-terminus of lysyl-tRNA synthetase and, more particularly, to a pharmaceutical composition comprising an antibody biding specifically to an epitope including the sequence of SEQ ID NO: 117 in the N-terminal domain of lysyl-tRNA synthetase (KRS) or a functional fragment thereof as an effective ingredient for preventing and treating an immune cell migration-related disease. A KRS N-terminus-specific antibody provided by the present invention can regulate the migration of immune cells, thereby exhibiting very remarkable effects in the prevention, alleviation, and treatment of immune cell migration-related diseases.

Abstract: An apparatus for predicting performance of a wheel in a vehicle: includes a learning device that generates a latent space for a plurality of two-dimensional (2D) wheel images based on a convolutional autoencoder (CAE), extracts a predetermined number of the plurality of 2D wheel images from the latent space, and learns a dataset having the plurality of 2D wheel images and performance values corresponding to the plurality of 2D wheel images; and a controller that predicts performance for the plurality of 2D wheel images based on a performance prediction model obtained by the learning device.

Abstract: A semiconductor manufacturing equipment may include a process chamber for treating a substrate; a front-end module including a first transfer robot, wherein the first transfer robot may be configured to transport the substrate received in a container; a transfer chamber between the front-end module and the process chamber, wherein the transfer chamber may be configured to load or unload the substrate into or out of the process chamber; and a cassette capable of receiving a replaceable component capable of being used in the process chamber. The front-end module may include a seat plate configured to move in a sliding manner so as to retract or extend into or from the front-end module. The cassette may be configured to be loaded into the front-end module while the cassette is seated on the seat plate.

Abstract: An apparatus and method for multiplexing signals using layered division multiplexing are disclosed. A signal multiplexing apparatus according to an embodiment of the present invention includes a combiner configured to combine a core layer signal and an enhanced layer signal at different power levels, and a time interleaver configured to perform interleaving applied to both the core layer signal and the enhanced layer signal.

Abstract: A method for sensor fusion for a vehicle, includes determining a first point corresponding to a closest point of a target object from the vehicle with respect to a potential collision based on a LiDAR track thereof and a heading of the vehicle, determining a second point corresponding to a closest point of the target object from the vehicle with respect to a potential collision based on a sensor fusion track, and updating the sensor fusion track based on the first point and the second point.

Abstract: A bit interleaver, a bit-interleaved coded modulation (BICM) device and a bit interleaving method are disclosed herein. The bit interleaver includes a first memory, a processor, and a second memory. The first memory stores a low-density parity check (LDPC) codeword having a length of 64800 and a code rate of 7/15. The processor generates an interleaved codeword by interleaving the LDPC codeword on a bit group basis. The size of the bit group corresponds to a parallel factor of the LDPC codeword. The second memory provides the interleaved codeword to a modulator for quadrature phase shift keying (QPSK) modulation.

Abstract: A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

Abstract: A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

Abstract: According to example embodiments of inventive concepts: a semiconductor device includes: first and second trench gates extending long in one direction in a substrate; third and fourth trench gates in the substrate, the third and fourth trench gates connecting the first and second trench gates with each other; a first region defined in the substrate by the first to fourth trench gates and surrounded by the first to fourth trench gates; and a second region and a third region defined in the substrate. The second region is in surface contact with the first region. The third region is in point contact with the first region. The first region includes a first high-voltage semiconductor device including a body of a first conduction type and an emitter of a second conduction type in the body. Floating wells of the first conduction type are in the second region and the third region.

Abstract: A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

Abstract: A nitride-based semiconductor device including a substrate; a GaN-containing layer on the substrate; a nitride-containing layer on the GaN layer; a channel blocking layer on the nitride-containing layer, the channel blocking layer including a nitride-based semiconductor; a gate insulation layer on the channel blocking layer; and a gate electrode on the gate insulation layer.

Abstract: A transistor includes a device portion and a collector layer. The device portion is in a first side of a semiconductor substrate, and includes a gate and an emitter. The collector layer is on a second side of the semiconductor substrate, which is opposite to the first side. The collector layer is an impurity-doped epitaxial layer and has a doping profile with a non-normal distribution.

Abstract: A bolting structure of a sub-frame includes a reinforcer mounting the sub-frame through a side member. The reinforcer includes: a reinforcing member disposed to intersect with the side member in a cross shape and bolted, together with the side member, to a lower panel; an inner pipe disposed at the side member from surfaces interfacing between the reinforcing member and the side member; an outer pipe disposed at the reinforcing member from the surfaces interfacing between the reinforcing member and the side member and inserted into the sub-frame; and a bolt bolted to the inner pipe through the outer pipe and fixing the sub-frame.