Patents by Inventor Nan Rong

Nan Rong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220016765
    Abstract: A method for object grasping, including: determining features of a scene; determining candidate grasp locations; determining a set of candidate grasp proposals for the candidate grasp locations; optionally modifying a candidate grasp proposal of the set; determining grasp scores associated with the candidate grasp proposals; selecting a set of final grasp proposals based on the grasp scores; and executing a grasp proposal from the set of final grasp proposals.
    Type: Application
    Filed: July 14, 2021
    Publication date: January 20, 2022
    Inventors: Li Yang Ku, Michael Stark, Ahmad Humayun, Nan Rong, Bhaskara Marthi
  • Publication number: 20220016767
    Abstract: A method for object grasping can include: generating a set of keypoints for one or more detected objects in a scene; subdividing the set of keypoints into subsets, each corresponding to a subregion of a detected object; determining a graspability score for the subregion; determining a grasp location for the subregion; selecting a candidate grasp location; and optionally grasping an object using the candidate grasp location.
    Type: Application
    Filed: July 14, 2021
    Publication date: January 20, 2022
    Inventors: Li Yang Ku, Nan Rong, Bhaskara Mannar Marthi
  • Publication number: 20210187741
    Abstract: Systems and method for grasp execution using height maps.
    Type: Application
    Filed: December 17, 2020
    Publication date: June 24, 2021
    Inventors: Bhaskara Mannar Marthi, Nan Rong
  • Publication number: 20200384601
    Abstract: The invention provides a polymer-polymer composite polishing pad comprising a polishing layer having a polishing surface for polishing or planarizing a substrate. A polymeric matrix forms the polishing layer. Fluoropolymer particles are embedded in the polymeric matrix. Wherein diamond abrasive materials cut the fluoropolymer particles and rubbing the cut fluoropolymer against a patterned silicon wafer forms a thin film covering at least a portion of the polishing layer and the thin film has a zeta potential more negative than the polymeric matrix at a pH of 7. The polishing surface formed from rubbing with the wafer has a fluorine concentration at a penetration depth of 1 to 10 nm of at least ten atomic percent higher than the bulk fluorine concentration at a penetration depth of 1 to 10 ?m.
    Type: Application
    Filed: June 10, 2019
    Publication date: December 10, 2020
    Inventors: Mohammad T. Islam, Nan-Rong Chiou, Matthew R. Gadinski, Youngrae Park, Gregory Scott Blackman, Lei Zhang, George C. Jacob
  • Publication number: 20200384602
    Abstract: The invention provides a method for polishing or planarizing a substrate. First, the method comprises attaching a polymer-polymer composite polishing pad to a polishing device. The polishing pad has a polymer matrix and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a zeta potential more negative than the polymeric matrix. Cationic particle-containing slurry is applied to the polishing pad. Conditioning the polymer-polymer composite polishing pad exposes the fluoropolymer particles to the polishing surface and creates fluoropolymer-containing debris particles in the slurry. Polishing or planarizing the substrate with the increased electronegativity from the fluoropolymer at the polishing surface and in the fluoropolymer-containing debris particles stabilizes the cationic particle-containing slurry to decreases the precipitation rate of the cationic particle-containing slurry.
    Type: Application
    Filed: June 10, 2019
    Publication date: December 10, 2020
    Inventors: Matthew R. Gadinski, Mohammad T. Islam, Nan-Rong Chiou, Youngrae Park, George C. Jacob
  • Publication number: 20200384600
    Abstract: The invention provides a polymer-polymer composite polishing method comprising a polishing layer having a polishing surface for polishing or planarizing a substrate. The method includes attaching a polymer-polymer composite having a polishing layer and a polymeric matrix. The polymer matrix has fluoropolymer particles embedded in the polymeric matrix. Then a cationic particle slurry is applied to the polymer-polymer composite polishing pad. Conditioning the polymer-polymer composite polishing pad with an abrasive cuts the polymer-polymer composite polishing pad; and rubbing the cut polymer-polymer composite polishing pad against the substrate forms the polishing surface. The polishing surface has a fluorine concentration measured in atomic percent at a penetration depth of 1 to 10 nm of at least ten percent higher than the bulk fluorine concentration measured with at a penetration depth of 1 to 10 ?m to polish or planarize the substrate.
    Type: Application
    Filed: June 10, 2019
    Publication date: December 10, 2020
    Inventors: Mohammad T. Islam, Nan-Rong Chiou, Matthew R. Gadinski, Youngrae Park, Gregory Scott Blackman, Lei Zhang, George C. Jacob
  • Publication number: 20200384603
    Abstract: The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface for polishing or planarizing the substrate; a polymeric matrix forming the polishing layer and including gas-filled or liquid-filled polymeric microelements; and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a tensile strength lower than the tensile strength of the polymeric matrix wherein diamond abrasive materials cut the fluoropolymer to form a reduced number of pad debris particles in the 1 ?m to 10 ?m size range.
    Type: Application
    Filed: June 10, 2019
    Publication date: December 10, 2020
    Inventors: Nan-Rong Chiou, Joseph So, Mohammad T. Islam, Matthew R. Gadinski, Youngrae Park, George C. Jacob
  • Patent number: 10391606
    Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4?-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4?-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 60 to 90, a shear storage modulus (G?) at 65° C.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: August 27, 2019
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: Jonathan G. Weis, Nan-Rong Chiou, George C. Jacob, Bainian Qian
  • Patent number: 10293456
    Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average to molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine or bismuth neodecanoate, all weight percent's based on the total solids weight of the reaction mixture.
    Type: Grant
    Filed: March 2, 2018
    Date of Patent: May 21, 2019
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Nan-Rong Chiou, Mohammad T. Islam, George C. Jacob, Teresa Brugarolas Brufau
  • Patent number: 10207388
    Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine, all weight percent's based on the total solids weight of the reaction mixture.
    Type: Grant
    Filed: April 19, 2017
    Date of Patent: February 19, 2019
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: Nan-Rong Chiou, Mohammad T. Islam, George C. Jacob
  • Publication number: 20180345449
    Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4?-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4?-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 50 to 90, a shear storage modulus (G?) at 65° C.
    Type: Application
    Filed: March 19, 2018
    Publication date: December 6, 2018
    Inventors: Jonathan G. Weis, Nan-Rong Chiou, George C. Jacob, Bainian Qian
  • Publication number: 20180345448
    Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4?-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4?-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 60 to 90, a shear storage modulus (G?) at 65° C.
    Type: Application
    Filed: June 6, 2017
    Publication date: December 6, 2018
    Inventors: Jonathan G. Weis, Nan-Rong Chiou, George C. Jacob, Bainian Qian
  • Publication number: 20180304439
    Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average to molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine or bismuth neodecanoate, all weight percent's based on the total solids weight of the reaction mixture.
    Type: Application
    Filed: March 2, 2018
    Publication date: October 25, 2018
    Inventors: Nan-Rong Chiou, Mohammad T. Islam, George C. Jacob
  • Publication number: 20180304438
    Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine, all weight percent's based on the total solids weight of the reaction mixture.
    Type: Application
    Filed: April 19, 2017
    Publication date: October 25, 2018
    Inventors: Nan-Rong Chiou, Mohammad T. Islam, George C. Jacob
  • Patent number: 10100300
    Abstract: A simple and low cost method of producing sealed arrays of laterally ordered nanochannels interconnected to microchannels of tunable size, over large surface areas, is disclosed. The method incorporates DNA combing and subsequent imprinting. Associated micro and macroscale inlets and outlets can be formed in the same process or manufactured later in low cost, non-cleanroom techniques. The techniques embrace two procedures, generating DNA nanostrands and translating these strands into nanoscale constructs via imprinting. Devices incorporating the novel arrays have a first microchannel, a second microchannel and a nanochannel that is substantially linear and which defines an axis. The nanochannel is connected at its open ends to the microchannels, which are aligned along the axis. Methods for precise dose delivery of agents into cells employing the devices in nanoelectroporation methods are also disclosed.
    Type: Grant
    Filed: November 10, 2017
    Date of Patent: October 16, 2018
    Inventors: Ly James Lee, Pouyan E. Boukany, Jingjiao Guan, Nan-Rong Chiou
  • Patent number: 10086494
    Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: October 2, 2018
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: Jonathan G. Weis, George C. Jacob, Bhawesh Kumar, Sarah E. Mastroianni, Wenjun Xu, Nan-Rong Chiou, Mohammad T. Islam
  • Publication number: 20180127739
    Abstract: A simple and low cost method of producing sealed arrays of laterally ordered nanochannels interconnected to microchannels of tunable size, over large surface areas, is disclosed. The method incorporates DNA combing and subsequent imprinting. Associated micro and macroscale inlets and outlets can be formed in the same process or manufactured later in low cost, non-cleanroom techniques. The techniques embrace two procedures, generating DNA nanostrands and translating these strands into nanoscale constructs via imprinting. Devices incorporating the novel arrays have a first microchannel, a second microchannel and a nanochannel that is substantially linear and which defines an axis. The nanochannel is connected at its open ends to the microchannels, which are aligned along the axis. Methods for precise dose delivery of agents into cells employing the devices in nanoelectroporation methods are also disclosed.
    Type: Application
    Filed: November 10, 2017
    Publication date: May 10, 2018
    Inventors: Ly James Lee, Pouyan E. Boukany, Jingjiao Guan, Nan-Rong Chiou
  • Publication number: 20180071888
    Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.
    Type: Application
    Filed: September 13, 2016
    Publication date: March 15, 2018
    Inventors: Jonathan G. Weis, George C. Jacob, Bhawesh Kumar, Sarah E. Mastroianni, Wenjun Xu, Nan-Rong Chiou, Mohammad T. Islam
  • Patent number: 9816086
    Abstract: A simple and low cost method of producing sealed arrays of laterally ordered nanochannels interconnected to microchannels of tunable size, over large surface areas, is disclosed. The method incorporates DNA combing and subsequent imprinting. Associated micro and macroscale inlets and outlets can be formed in the same process or manufactured later in low cost, non-cleanroom techniques. The techniques embrace two procedures, generating DNA nanostrands and translating these strands into nanoscale constructs via imprinting. Devices incorporating the novel arrays have a first microchannel, a second microchannel and a nanochannel that is substantially linear and which defines an axis. The nanochannel is connected at its open ends to the microchannels, which are aligned along the axis. Methods for precise dose delivery of agents into cells employing the devices in nanoelectroporation methods are also disclosed.
    Type: Grant
    Filed: May 20, 2014
    Date of Patent: November 14, 2017
    Inventors: Ly James Lee, Pouyan E. Boukany, Jingjiao Guan, Nan-Rong Chiou
  • Publication number: 20150307710
    Abstract: Embodiments of the present disclosure include a hardener compound for curing with an epoxy resin, where the hardener compound includes a copolymer having a first constitutional unit of the formula (I), a second constitutional unit of the formula (II), and a third constitutional unit of the formula (III), where each q, n and m is independently a positive integer; each b is independently selected from the group of 6, 8, 10 and 12; each Y is independently an organic group; and each R is independently selected from the group of a hydrogen, an organic group and a halogen. Embodiments of the present disclosure include an epoxy system that includes the hardener compound and an epoxy resin.
    Type: Application
    Filed: December 12, 2012
    Publication date: October 29, 2015
    Applicant: Dow Global Technologies LLC
    Inventors: Michael J. Mullins, Chao Zhang, Jia wen Xiong, Hongyu Chen, Michael D. Read, Nan-Rong Chiou