Patents by Inventor Nan Wang

Nan Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10867309
    Abstract: The embodiments of the present disclosure provide systems and methods for outbound forecasting, comprising receiving an initial distribution of priority values to each fulfillment center (FC) in each region, running a simulation, using a simulation algorithm, of the initial distribution, calculating an outbound capacity utilization value of each FC, determining a number of FCs comprising an outbound capacity utilization value that exceeds a predetermined threshold, feeding the simulation algorithm with the determined number of FCs to generate one or more additional distributions of priority values, generating a FC priority filter comprising an optimal set of priority values based on the one or more additional distributions of priority values, and modifying an allocation of a plurality of SKUs among a plurality of FCs based on the generated FC priority filter.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: December 15, 2020
    Assignee: Coupang Corp.
    Inventors: Nan Wang, Ke Ma, Christopher Carlson, Bin Gu, Shixian Li
  • Publication number: 20200388699
    Abstract: A semiconductor device and a method for forming the semiconductor device are provided. The method includes forming first liner layers and second liner layers alternately disposed over a substrate, where the substrate includes a first region and a second region. The method also includes forming a plurality of fins separately disposed over the substrate by etching the first liner layers, the second liner layers, and a portion of the substrate along a thickness direction. The plurality of fins are disposed over the first region and the second region. In addition, the method includes forming an insulating layer to fully fill a region between adjacent fins disposed over the second region. Further, the method includes forming a dummy gate structure over the substrate, where the dummy gate structure is across the fins.
    Type: Application
    Filed: June 10, 2020
    Publication date: December 10, 2020
    Inventor: Nan WANG
  • Publication number: 20200388543
    Abstract: A semiconductor device and a method for forming the semiconductor device are provided. The method includes providing a substrate including an NMOS region and a PMOS region, forming an isolation layer on the substrate, forming initial hard mask layers on the isolation layer, and forming hard mask layers by removing a number of initial hard mask layers from the initial hard mask layers. The method also includes forming openings in the isolation layer in the NMOS region by removing portions of the isolation layer covered by the hard mask layers in the NMOS region, forming first fins in the openings in the isolation layer in the NMOS region, forming openings in the isolation layer in the PMOS region by removing portions of the isolation layer covered by the hard mask layers in the PMOS region, and forming second fins in the openings in the isolation layer in the PMOS region.
    Type: Application
    Filed: June 10, 2020
    Publication date: December 10, 2020
    Inventor: Nan WANG
  • Publication number: 20200373161
    Abstract: A semiconductor device and a method for forming the semiconductor device are provided. The method includes providing a substrate, and forming a first core layer on the substrate. The substrate includes a pull-up transistor region. The method also includes forming separately arranged second core layers on the first core layer, and forming a first sacrificial sidewall spacer on a sidewall of a second core layer. A gap is formed between adjacent first sacrificial sidewall spacers over the pull-up transistor region. In addition, the method includes removing the second core layers, and then etching the first core layer using the first sacrificial sidewall spacers as a mask until the substrate is exposed. The gap is transferred to a region between adjacent etched first core layers over the pull-up transistor region. Further, after etching the first core layer, the method includes forming a dielectric layer to fully fill the gap.
    Type: Application
    Filed: May 20, 2020
    Publication date: November 26, 2020
    Inventor: Nan WANG
  • Patent number: 10846520
    Abstract: The simulated sandtray system consists of camera device, controller, digital processor, display device, physical sandtray mark, and physical sand cabinet mark. Camera devices are linked with digital processor and display device. Physical sandtray mark is connected to cameral devices for the purpose of delivering optical information. Physical sand cabinet mark is linked to camera devices for the purpose of delivering optical information. The advantages and features of this invention are as follows: a number of initiators, online connection and simultaneous inter-regional operation of 3D virtual sandtray.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: November 24, 2020
    Inventor: Zi-Nan Wang
  • Publication number: 20200342211
    Abstract: A first face region within a first image is determined. The first face region includes a location of a face within the first image. Based on the determined first face region within the first image, a predicted face region within a second image is determined. A first region of similarity within the predicted face region is determined. The first region of similarity has at least a predetermined degree of similarity to the first face region within the first image. Whether a second face region is present within the second image is determined. The location of the face within the second image is determined based on the first region of similarity, the determination of whether the second face region is present within the second image, and a face region selection rule.
    Type: Application
    Filed: July 9, 2020
    Publication date: October 29, 2020
    Applicant: Alibaba Group Holding Limited
    Inventors: Nan Wang, Zhijun Du, Yu Zhang
  • Publication number: 20200343386
    Abstract: The present disclosure provides a semiconductor device and a fabrication method. The method includes: providing a substrate; forming at least one sacrificial layer and at least one liner layer, that are alternately stacked over each other, on the substrate; etching the at least one liner layer and the at least one sacrificial layer until the substrate is exposed, to form a plurality of fins, discretely arranged on the substrate; and etching a portion of a thickness of the substrate, such that a width of the etched portion of the substrate at a bottom of the at least one sacrificial layer is less than a width of the at least one liner layer of the plurality of fins.
    Type: Application
    Filed: April 29, 2020
    Publication date: October 29, 2020
    Inventor: Nan WANG
  • Publication number: 20200330508
    Abstract: The present invention relates to a rare element composition for preventing or suppressing a cancer or cancer relapse. The composition comprises selenium, molybdenum, zinc, germanium, magnesium, iron and iodine. Also provided is a method for preventing or suppressing a cancer or a cancer relapse, comprising administering the composition of the invention to a subject.
    Type: Application
    Filed: April 18, 2019
    Publication date: October 22, 2020
    Inventors: FU NAN WANG, MING CHU HSU, SEBO DIH WANG, SEBO LING WANG, SEBO MICHELLE WANG, SEBO GENE WANG
  • Publication number: 20200328217
    Abstract: Semiconductor cell and its forming method and operating method are provided. The semiconductor device includes: a substrate with a first region; a first nanopillar, formed on a substrate surface of the first region and perpendicular to the substrate surface; a first source/drain region, formed at a bottom of the first nanopillar and in a portion of the substrate in the first region; a first gate structure, surrounding the first nanopillar and formed on the first source/drain region; and a second source/drain region, formed at a top of the first nanopillar and on the first gate structure.
    Type: Application
    Filed: April 9, 2020
    Publication date: October 15, 2020
    Inventor: Nan WANG
  • Publication number: 20200328085
    Abstract: Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a substrate having a first region, second regions and third regions; and forming a patterned structure on the substrate. The patterned structure includes at least one first patterned layer on the first region, at least one second patterned layer on the second region and at least one third patterned layer on the third region, the at least one first patterned layer is discrete from the at least one second region and the at least one second region is discrete from the at least one third region. The method also includes removing the second patterned layer; and etching the substrate using the first patterned layer and the third patterned layer as an etching mask to form a base substrate, the first fin on the base substrate and the third fin on the base substrate.
    Type: Application
    Filed: April 14, 2020
    Publication date: October 15, 2020
    Inventor: Nan WANG
  • Publication number: 20200325547
    Abstract: The present invention discloses a method for identifying fruit storability of apple fruit and a specific primer pair. The specific primer pair includes primers F and R; the primer F is a single-stranded DNA molecule depicted in SEQ ID No.1, and the primer R is a single-stranded DNA molecule depicted in SEQ ID No.2. It has been demonstrated that the specific primer pair can genotype ACS1 gene of an apple plant to further determine the fruit storability, decreasing costs of land, manpower and material resources. The present invention is of great importance in improving breeding efficiency and reducing breeding cost and has great application value in apple breeding.
    Type: Application
    Filed: November 19, 2019
    Publication date: October 15, 2020
    Applicant: Shandong Agricultural University
    Inventors: Zongying ZHANG, Yicheng WANG, Cuicui WANG, Zuolin MAO, Nan WANG, Mengyu SU, Jing ZHANG, Shenghui JIANG, Xuesen CHEN
  • Publication number: 20200328218
    Abstract: Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a semiconductor substrate having at least one first region, at least one second region and at least one third region; forming at least one first fin on the at least one first region, at least one second fin on the at least one second region and at least one third fin on the at least one third region; forming a first opening in the first fin; forming a second opening in the second fin; forming a first epitaxial layer in the first opening and the second opening; forming a third opening in the at least one third fin; removing at least a portion of the first epitaxial layer in the at least one second fin to form a fourth opening; and forming a second epitaxial layer in the third opening and the fourth opening.
    Type: Application
    Filed: April 10, 2020
    Publication date: October 15, 2020
    Inventor: Nan WANG
  • Publication number: 20200293968
    Abstract: The embodiments of the present disclosure provide systems and methods for optimizing allocation of products, comprising receiving an initial set of solutions comprising an initial distribution of a plurality of stock keeping unit (SKUs) among a plurality of fulfillment centers (FCs), and running a simulation of each solution of the initial set of solutions. Participation ratios may be calculated for each solution, and a score for each solution may be determined based on the calculated participation ratio. At least one solution with a highest determined score may be selected to feed a simulation algorithm to generate one or more additional solutions. Based on a best-performing solution, an allocation of the plurality of SKUs among the plurality of FCs may be modified. The best-performing solution may have the highest determined score among all solutions generated.
    Type: Application
    Filed: March 13, 2019
    Publication date: September 17, 2020
    Applicant: Coupang, Corp.
    Inventors: Ke MA, Bin GU, Nan WANG
  • Publication number: 20200279848
    Abstract: A semiconductor structure and a method for forming the semiconductor structure are provided. The semiconductor structure includes a substrate, which includes a first region, a second region, and a third region. The semiconductor structure also includes a first fin, a second fin, and a third fin formed on the first, second, and third regions, respectively. Moreover, the semiconductor structure includes an isolation layer formed on the substrate, and a portion of sidewall surface of each of the first, second, and third fins. In addition, the semiconductor structure includes a first epitaxial layer, a second epitaxial layer, and a third epitaxial layer formed on the first, second, and third fins, respectively. Two sides of the third epitaxial layer are in contact with the first epitaxial layer and the second epitaxial layer, respectively. Further, the semiconductor structure includes a conductive structure formed on the first, second, and third epitaxial layers.
    Type: Application
    Filed: January 23, 2020
    Publication date: September 3, 2020
    Inventor: Nan WANG
  • Publication number: 20200277530
    Abstract: According to one aspect of the invention, a catalyst tower is provided, which comprises a gas inlet and a catalyst holding plate set therein. The gas inlet is the opening where the catalyst tower and the upstream piping connects with one another. The distance between the gas inlet and the catalyst holding plate is directly proportional to the difference in diameter between the catalyst tower and the upstream piping.
    Type: Application
    Filed: January 6, 2017
    Publication date: September 3, 2020
    Inventor: Hsiao-Nan WANG
  • Publication number: 20200267919
    Abstract: The present invention discloses an application of high-flavonoid elite germplasm CSR6R6-777 in apple breeding. The present invention seeks to protect use of an apple (Malus domestica) CSR6R6-777 in apple breeding. The deposition number of the apple (Malus domestica) CSR6R6-777 is CGMCC NO.12468. The purpose of the breeding is to obtain an apple germplasm with excellent triats. The apple germplasm with excellent triats is an apple plant that meets the (a) and/or (b) and/or (c) and/or (d): (a) fully red-fleshed; (b) high-flavonoid content in the flesh; (c) high anthocyanin content in the flesh; (d) high antioxidant capacity of the flesh. The present application has great value for functional apple breeding.
    Type: Application
    Filed: September 26, 2017
    Publication date: August 27, 2020
    Inventors: Xuesen CHEN, Nan WANG, Shenghui JIANG, Haifeng XU, Yicheng WANG, Zhiquan MAO, Yuanmao JIANG
  • Patent number: 10757537
    Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for locating a client terminal are provided. One of the methods includes: obtaining, by an audio signal playing terminal, identification information of an object associated with the audio signal playing terminal; watermarking, by the audio signal playing terminal, a to-be-played audio signal based on the identification information to obtain an audio signal having a watermark; and playing, by the audio signal playing terminal, the audio signal having the watermark for a client terminal to collect the audio signal having the watermark and send the audio signal having the watermark or the identification information to a server to enable the server to obtain the identification information and determine a position of the object based on a correspondence between the identification information and the position of the object and thereby to determine a position of the client terminal.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: August 25, 2020
    Assignee: Alibaba Group Holding Limited
    Inventors: Nan Wang, Zhijun Du
  • Publication number: 20200255487
    Abstract: The invention provides a sensitive cell-based assay, in which stably expressed mutant Huntingtin (mHTT) fragments serve as biosensors to detect mHTT species present in biosamples or can be used to identify novel compounds for use as therapeutics for the treatment of HD.
    Type: Application
    Filed: October 12, 2018
    Publication date: August 13, 2020
    Inventors: Xiangdong W. YANG, Chung-Ying LEE, Nan WANG, Robert DAMOISEAUX
  • Publication number: 20200251379
    Abstract: Fabrication method and semiconductor device are provided. The method includes: providing a substrate including a first region, a second region and a third region arranged sequentially along a first direction; forming fins on the substrate with an extending direction parallel to the first direction; forming gate structures on the first region and the third region across the fins, and forming a sacrificial gate structure across the fins; forming a dielectric layer over the substrate; forming a mask layer on the dielectric layer including a first opening and a second opening; and removing the sacrificial gate structure under a bottom of the first opening, a portion of fins under a bottom of the first opening, and a portion of gate structures exposed by the second opening, by using the mask layer as an etch mask, to form a first groove and a second groove.
    Type: Application
    Filed: January 22, 2020
    Publication date: August 6, 2020
    Inventor: Nan WANG
  • Publication number: 20200250302
    Abstract: This application provides a security control method and a computer system. A first domain and a second domain are deployed in the computer system, the second domain is more secure than the first domain, a program is deployed in the first domain, and a control flow management module and an audit module are deployed in the second domain. The second domain is more secure than the first domain. When the program in the first domain is executed, the control flow management module obtains control flow information by using a tracer. The audit module audits the to-be-audited information according to an audit rule, and when the to-be-audited information matches the audit rule, determines that the audit succeeds and then allows the first domain to perform a subsequent operation, for example, to access a secure program in the second domain.
    Type: Application
    Filed: April 2, 2020
    Publication date: August 6, 2020
    Applicant: HUAWEI TECHNOLOGIES CO.,LTD.
    Inventors: Haibo Chen, Nan Wang, Shanxi Chen, Miao Xie