Abstract: Disclosed is a photosensitive resin composition containing a cationic photopolymerization initiator (A) and an epoxy resin (B) having two or more epoxy groups in each molecule, which is characterized in that the cationic photopolymerization initiator (A) is a cationic photopolymerization initiator (A-1) that is represented by formula (1).

Abstract: A method for fabricating a micromachine component of resin comprising step (a) of forming a sacrifice layer on a substrate, step (b) of forming at least two photosensitive resin composition layers sequentially on the sacrifice layer, and performing photolithography of each photosensitive resin composition layer to form an air gap portion defining the circumferential edge potion of the micromachine component and an air gap portion where an internal structure of the micromachine component is constituted to form a multilayer structure, step (c) for depositing dry film resist on the multilayer structure of the cured photosensitive resin composition layer, and performing photolithography of the dry film resist layer to form a cured dry film resist layer in which an air gap portion defining the circumferential edge of a shroud layer and an air gap where the structure of the shroud layer is constituted are formed, and step (d) for separating the micromachine component having the multilayer structure of the cured pho

Abstract: Photoresist compositions that demonstrate superior photolithographic performance and hardened resist films that show superior resistance to solvents, have excellent resistance to under plating during the electrodeposition of metals, and show excellent resist stripping characteristics. These photoresist compositions according to the invention are well-suited as for applications in the manufacture of MEMS and micromachine devices. These photoresist compositions according to the invention comprise one or more epoxide-substituted, polycarboxylic acid Resin Component (A), one or more photoacid generator compounds (B), and one or more solvent (C).

Abstract: A permanent photoresist composition comprising: (A) one or more bisphenol A-novolac epoxy resins according to Formula I; wherein each group R in Formula I is individually selected from glycidyl or hydrogen and k in Formula I is a real number ranging from 0 to about 30; (B) one or more epoxy resins selected from the group represented by Formulas BIIa and BIIb; wherein each R1, R2 and R3 in Formula BIIa are independently selected from the group consisting of hydrogen or alkyl groups having 1 to 4 carbon atoms and the value of p in Formula BIIa is a real number ranging from 1 to 30; the values of n and m in Formula BIIb are independently real numbers ranging from 1 to 30 and each R4 and R5 in Formula BIIb are independently selected from hydrogen, alkyl groups having 1 to 4 carbon atoms, or trifluoromethyl; (C) one or more cationic photoinitiators (also known as photoacid generators or PAGs); and (D) one or more solvents.

Abstract: Photoresist compositions that demonstrate superior photolithographic performance and hardened resist films that show superior resistance to solvents, have excellent resistance to under plating during the electrodeposition of metals, and show excellent resist stripping characteristics. These photoresist compositions according to the invention are well-suited as for applications in the manufacture of MEMS and micromachine devices. These photoresist compositions according to the invention comprise one or more epoxide-substituted, polycarboxylic acid Resin Component (A), one or more photoacid generator compounds (B), and one or more solvent (C).