Abstract: According to the present disclosure, it is possible to suppress a change in a state of a gas. There is provided a technique that includes: (a) adjusting at least one selected from the group of a pressure and a temperature of a buffer space in a buffer chamber when the temperature of the buffer space is out of a pre-set temperature range or the pressure of the buffer space is out of a pre-set pressure range; and (b) processing a substrate by supplying a gas via the buffer chamber to a process chamber in which the substrate is processed.

Abstract: There is provided a technique that includes: by using a substrate transfer apparatus including a mounting stage on which a substrate is placed and a gripper capable of gripping the substrate placed on the mounting stage between a first portion and a second portion, moving the substrate placed on the mounting stage toward the first portion by using the second portion that pushes the substrate with a first external force; and gripping the substrate placed on the mounting stage with a second external force or a third external force by using the first portion and the second portion.

Abstract: Provided is a technique capable of obtaining a desired processing quality for each of a plurality of substrates even when the plurality of substrates are processed while being rotated. There is provided a technique that includes: a process chamber in which a plurality of substrates are processed; a gas supplier configured to be capable of supplying a gas to the process chamber; a substrate support provided in the process chamber so as to be rotatable and configured to be capable of supporting the plurality of substrates in a circumferential arrangement; and a detector configured to detect a rotation state of the substrate support.

Abstract: Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a processing method including: (a) transferring a substrate from a storage container storing one or more substrates including the substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber when it is determined that a maintenance timing is reached based on information comprising at least the number of processed substrates; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, and setting the process chamber to a maintenance enable state after the substrate processing is completed by stopping the one or more substrates from being transferred into the process chamber.

Abstract: There is provided a technique that includes adjusting a pressure of each of a plurality of process chambers, by adjusting an opening degree of a pressure-adjusting valve included in a common gas exhaust pipe, which is connected to a plurality of process chamber exhaust pipes and is disposed to merge respective process chamber exhaust pipes on a downstream side of the plurality of process chamber exhaust pipes, to a predetermined opening degree and by exhausting an atmosphere of each of the process chambers from the plurality of process chamber exhaust pipes and the common gas exhaust pipe while supplying an inert gas to the plurality of process chambers; processing a substrate in each of the process chambers; and detecting a fluctuation of pressures in the process chamber exhaust pipes by measuring, by one or more pressure detectors, the pressures of the process chamber exhaust pipes.

Abstract: Provided is a technique of processing a substrate including (a) adsorbing a first adsorption inhibitor to a first portion of the substrate at a first temperature, (b) forming a film on a second portion of the substrate by supplying a processing gas at a second temperature, (c) removing at least a part of the first adsorption inhibitor adsorbed to the substrate, at a third temperature, (d) supplying a second adsorption inhibitor to the substrate at a fourth temperature higher than or equal to the first temperature, (e) supplying the processing gas to the substrate at a fifth temperature, and (f) removing at least a part of the second adsorption inhibitor adsorbed to the substrate, at a sixth temperature. Where (b) is performed after (a), (c) is performed after (b), (d) is performed after (c), (e) is performed after (d), and (f) is performed after (e).

Abstract: Described is a technique capable of optimizing a timing of a maintenance process.

Abstract: There is provided a technique that includes: (a) mounting a substrate on a mounting stage in which at least a part of a surface is constituted by a first member; (b) forming films by supplying a first gas, the films including a first film formed on a surface of the substrate and a second film having a portion continuous with the first film and formed on a surface of the first member; and (c) generating stress attributable to a difference in thermal deformation amount between the first member and the substrate, inside the second film, and making at least a part of the second film discontinuous.

Abstract: There is provided a technique capable of suppressing a variation within a substrate processing. There is provided a technique that includes performing a cycle a plurality of times, the cycle including: (a) storing a first process gas in a storage; (b) supplying the first process gas from the storage at a first temperature to a substrate after (a) to change a temperature of the storage to a second temperature lower than the first temperature; and (c) changing the temperature of the storage after supplying the first process gas to a third temperature after (b), wherein (a), (b) and (c) are sequentially performed in the cycle, and wherein the third temperature is kept within a predetermined temperature range while the cycle is performed the plurality of times.

Abstract: A uniformity of a substrate processing within a substrate surface can be improved. There is provided a technique that includes: a process vessel in which a process gas is excited into a plasma state; a gas supplier supplying the process gas into the process vessel; and a plasma generation structure wound in a spiral shape along an outer periphery of the process vessel and including at least two coils to which high-frequency powers are respectively supplied, wherein diameters of the at least two coils are substantially the same, lengths of the at least two coils are substantially same, and a value of a net amplitude obtained by overlapping an amplitude of a superposition of standing waves respectively generated by each of the at least two coils is set to be smaller than a peak of the amplitude of each of the standing waves.

Abstract: There is provided technique that includes (a) adsorbing a first adsorption inhibitor to a first portion of a substrate by supplying the first adsorption inhibitor to the substrate at a first temperature; (b) after (a), forming a film on a second portion of the substrate by supplying a processing gas to the substrate at a second temperature; (c) after (b), removing at least a part of the first adsorption inhibitor, which is adsorbed to the substrate, at a third temperature higher than the second temperature; (d) after (c), supplying a second adsorption inhibitor to the substrate at a fourth temperature; (e) after (d), supplying the processing gas to the substrate at the second temperature higher than the fourth temperature; and (f) after (e), removing at least a part of the second adsorption inhibitor, which is adsorbed to the substrate, at the third temperature higher than the second temperature.

Abstract: There is provided a technique capable of preventing a diffusion of a film-forming gas through a through-hole. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate mounting table; through-holes at the substrate mounting table; lift pins; an elevator capable of elevating or lowering the substrate mounting table or the lift pins or both; and a controller capable of controlling the elevator so as to perform: (a) placing a substrate on the lift pins protruding from a surface of the substrate mounting table through the through-holes; (b) placing the substrate on the surface of the substrate mounting table by moving the substrate mounting table or the lift pins or both; (c) stopping the substrate mounting table at a substrate processing position; and (d) moving the lift pins to positions in the through-holes at which the lift pins are out of contact with the substrate.

Abstract: A substrate processing technique includes a substrate mounting table including a substrate mounting surface for a substrate; a process container for accommodating the substrate mounting table and forming a process chamber for processing the substrate mounted on the substrate mounting surface; at least one gas supplier for suppling a processing gas to the process chamber; a first wall arranged on an outer peripheral side of the at least one substrate mounting table; a second wall arranged at an outer side of the first wall on the outer peripheral side of the substrate mounting table; at least one exhaust flow path formed between the first wall and the second wall and configured to discharge a gas in the process chamber; and a shield plate arranged below the substrate mounting table and extending at least to a lower side of a lower end of the second wall.

Abstract: There is provided a technique that includes a load port on which a plurality of storage containers, each storage container storing a plurality of substrates, are mounted, a plurality of process chambers configured to be capable of accommodating the substrates, a transfer part configured to transfer the substrates stored in each storage container to each of the process chambers; an operation part configured to, when performing the process in a state in which a substrate is not present in each process chamber, count first count data of data tables for corresponding process chambers; a memory configured to store the data tables; and a controller configured to assign first transfer flag data to a data table of a process chamber having largest first count data and configured to control the transfer part based on the first transfer flag data so as to transfer the substrates in the predetermined order.

Abstract: There is provided a technique that includes a process chamber in which a substrate is processed; a plurality of substrate supports configured to support the substrate; a rotatable table including a plurality of supports configured to support the plurality of substrate supports; and a heat conduction insulator configured to suppress heat conduction between the plurality of supports.

Abstract: A technique includes a process chamber where a substrate-processing process including a heating process to a substrate is capable of being performed, a boat configured to support the substrate, a revolution part including a plurality of boat supports configured to support the boat, and capable of revolving the boat supports, a delivery chamber including a first area arranged below the process chamber, a second area where the substrate after the heating process is capable of waiting, and a third area where the substrate is capable of being delivered to and from an adjacent transfer chamber, among areas above the revolution part, a cooler capable of performing a cooling process to the substrate in the second area, and a controller capable of controlling a revolution operation or a movement operation.

Abstract: Described herein is a technique capable of reducing an amount of moisture in a low temperature region in a substrate processing apparatus provided with a transfer chamber. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber provided with a heater; a load lock chamber; a transfer chamber provided between the process chamber and the load lock chamber and including a first region provided adjacent to the process chamber and a second region provided more adjacent to the load lock chamber than the first region and whose temperature is lower than a temperature of the first region; a detector capable of detecting an amount of moisture in the transfer chamber; and an inert gas supplier capable of supplying an inert gas toward the second region in the transfer chamber.

Abstract: A processing chamber that processes a substrate; a first gas supply mechanism that supplies a first film-forming gas to a front surface of the substrate; a second gas supply mechanism that supplies a second film-forming gas to a back surface of the substrate; a substrate heating table that heats the substrate in the processing chamber; a lifting/lowering mechanism that lifts and lowers the substrate between a first position where the substrate can be transferred into and out of the processing chamber and a second position which is closer to the substrate heating table than the first position and where the substrate is not in contact with the substrate heating table; and a controller capable of controlling the first and second gas supply mechanisms, the substrate heating table, and the lifting/lowering mechanism so as to form films on both surfaces of the substrate while heating the substrate at the second position.

Abstract: There is provided a technique capable of improving a uniformity of a substrate processing on a substrate surface. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate processing room; a plasma generation room; a gas supplier supplying a gas into the plasma generation room; a first coil surrounding the plasma generation room and to which an electric power is supplied; and a second coil surrounding the plasma generation room and to which an electric power is supplied. An axial direction of the second coil is equal to that of the first coil, a winding diameter of the second coil is different from that of the first coil, and a peak of a voltage distribution generated by supplying the electric power to the second coil does not overlap with a peak of a voltage distribution generated by the first coil.

Abstract: There is provided a technique that includes abnormality detecting by picking up a sound generated from a transfer configured to operate in a vacuum and transport a substrate in a vacuum transfer chamber and compare the sound information with a preset threshold value to detect an abnormality of the transfer. The transfer includes a gas-filled container arranged in the vacuum transfer chamber and filled with a gas and a microphone installed inside the gas-filled container.