Abstract: A substrate processing technique includes a substrate mounting table including a substrate mounting surface for a substrate; a process container for accommodating the substrate mounting table and forming a process chamber for processing the substrate mounted on the substrate mounting surface; at least one gas supplier for suppling a processing gas to the process chamber; a first wall arranged on an outer peripheral side of the at least one substrate mounting table; a second wall arranged at an outer side of the first wall on the outer peripheral side of the substrate mounting table; at least one exhaust flow path formed between the first wall and the second wall and configured to discharge a gas in the process chamber; and a shield plate arranged below the substrate mounting table and extending at least to a lower side of a lower end of the second wall.

Abstract: There is provided a technique that includes a load port on which a plurality of storage containers, each storage container storing a plurality of substrates, are mounted, a plurality of process chambers configured to be capable of accommodating the substrates, a transfer part configured to transfer the substrates stored in each storage container to each of the process chambers; an operation part configured to, when performing the process in a state in which a substrate is not present in each process chamber, count first count data of data tables for corresponding process chambers; a memory configured to store the data tables; and a controller configured to assign first transfer flag data to a data table of a process chamber having largest first count data and configured to control the transfer part based on the first transfer flag data so as to transfer the substrates in the predetermined order.

Abstract: There is provided a technique that includes a process chamber in which a substrate is processed; a plurality of substrate supports configured to support the substrate; a rotatable table including a plurality of supports configured to support the plurality of substrate supports; and a heat conduction insulator configured to suppress heat conduction between the plurality of supports.

Abstract: A technique includes a process chamber where a substrate-processing process including a heating process to a substrate is capable of being performed, a boat configured to support the substrate, a revolution part including a plurality of boat supports configured to support the boat, and capable of revolving the boat supports, a delivery chamber including a first area arranged below the process chamber, a second area where the substrate after the heating process is capable of waiting, and a third area where the substrate is capable of being delivered to and from an adjacent transfer chamber, among areas above the revolution part, a cooler capable of performing a cooling process to the substrate in the second area, and a controller capable of controlling a revolution operation or a movement operation.

Abstract: Described herein is a technique capable of reducing an amount of moisture in a low temperature region in a substrate processing apparatus provided with a transfer chamber. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber provided with a heater; a load lock chamber; a transfer chamber provided between the process chamber and the load lock chamber and including a first region provided adjacent to the process chamber and a second region provided more adjacent to the load lock chamber than the first region and whose temperature is lower than a temperature of the first region; a detector capable of detecting an amount of moisture in the transfer chamber; and an inert gas supplier capable of supplying an inert gas toward the second region in the transfer chamber.

Abstract: A processing chamber that processes a substrate; a first gas supply mechanism that supplies a first film-forming gas to a front surface of the substrate; a second gas supply mechanism that supplies a second film-forming gas to a back surface of the substrate; a substrate heating table that heats the substrate in the processing chamber; a lifting/lowering mechanism that lifts and lowers the substrate between a first position where the substrate can be transferred into and out of the processing chamber and a second position which is closer to the substrate heating table than the first position and where the substrate is not in contact with the substrate heating table; and a controller capable of controlling the first and second gas supply mechanisms, the substrate heating table, and the lifting/lowering mechanism so as to form films on both surfaces of the substrate while heating the substrate at the second position.

Abstract: There is provided a technique capable of improving a uniformity of a substrate processing on a substrate surface. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate processing room; a plasma generation room; a gas supplier supplying a gas into the plasma generation room; a first coil surrounding the plasma generation room and to which an electric power is supplied; and a second coil surrounding the plasma generation room and to which an electric power is supplied. An axial direction of the second coil is equal to that of the first coil, a winding diameter of the second coil is different from that of the first coil, and a peak of a voltage distribution generated by supplying the electric power to the second coil does not overlap with a peak of a voltage distribution generated by the first coil.

Abstract: There is provided a technique that includes abnormality detecting by picking up a sound generated from a transfer configured to operate in a vacuum and transport a substrate in a vacuum transfer chamber and compare the sound information with a preset threshold value to detect an abnormality of the transfer. The transfer includes a gas-filled container arranged in the vacuum transfer chamber and filled with a gas and a microphone installed inside the gas-filled container.

Abstract: Described herein is a technique capable of reducing an amount of moisture in a low temperature region in a substrate processing apparatus provided with a transfer chamber. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber provided with a heater; a load lock chamber; a transfer chamber provided between the process chamber and the load lock chamber and including a first region provided adjacent to the process chamber and a second region provided more adjacent to the load lock chamber than the first region and whose temperature is lower than a temperature of the first region; a detector capable of detecting an amount of moisture in the transfer chamber; and an inert gas supplier capable of supplying an inert gas toward the second region in the transfer chamber.

Abstract: There is provided a technique that includes: a process chamber in which a substrate is processed; an exhaust controller configured to control a gas flow path through which a plurality of exhausts in parallel is connected to the process chamber and a gas flow in the gas flow path; an output controller configured to control output of each of the exhausts; and a controller configured to be capable of controlling the exhaust controller and the output controller.

Abstract: A technique includes at least one chamber including a process chamber that is capable of processing a substrate and a shower head arranged in an upstream of the process chamber; a gas supplier that is capable of supplying a gas into the process chamber via the shower head; a first exhaust pipe communicating with the shower head; a second exhaust pipe communicating with the process chamber; a first exhaust controller installed in the first exhaust pipe; a first heater installed in the first exhaust pipe; and a controller configured to be capable of: (a) controlling the gas supplier so as to supply a processing gas as the gas to the shower head, and (b) controlling the gas supplier so as to supply a non-processing gas as the gas to the shower head.

Abstract: There is provided a technique that includes: a substrate mounting table vertically movable and incorporating a heating mechanism; a process chamber divided by the substrate mounting table into a process region where a substrate is processed and a transfer region where transfer of the substrate is performed; a cooling gas supply system that supplies a cooling gas into the process chamber; a cleaning gas supply system that supplies a cleaning gas into the process chamber; an exhaust system that exhausts the process chamber; a controller capable of controlling the substrate mounting table, the cooling gas supply system, the cleaning gas supply system, and the exhaust system to perform: supplying the cooling gas into the process chamber in a state where the substrate mounting table is moved below the process region; and supplying the cleaning gas into the process chamber at a temperature lower than a temperature during substrate processing.

Abstract: Described herein is a technique capable of suppressing generation of particles by removing by-products in a groove of a high aspect ratio. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; and a substrate support provided in the process chamber and including a plurality of supports where the substrate is placed, wherein the process chamber includes a process region where a process gas is supplied to the substrate and a purge region where the process gas above the substrate is purged, and the purge region includes a first pressure purge region to be purged at a first pressure and a second pressure purge region to be purged at a second pressure higher than the first pressure.

Abstract: There is provided a technique capable of improving a uniformity of a substrate processing on a substrate surface. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate processing room; a plasma generation room; a gas supplier supplying a gas into the plasma generation room; a first coil surrounding the plasma generation room and to which an electric power is supplied; and a second coil surrounding the plasma generation room and to which an electric power is supplied. An axial direction of the second coil is equal to that of the first coil, a winding diameter of the second coil is different from that of the first coil, and a peak of a voltage distribution generated by supplying the electric power to the second coil does not overlap with a peak of a voltage distribution generated by the first coil.

Abstract: According to the present disclosure, there is provided a technique capable of improving a throughput and suppressing an oxidation of a surface of a substrate and an adhesion of particles to the surface of the substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a plurality of process chambers; a transfer chamber provided adjacent to the plurality of process chambers and maintained in a decompressed state; a waiting chamber capable of communicating with the transfer chamber in the decompressed state, provided with a plurality of supports capable of supporting a plurality of substrates after a process set for a first process chamber among the plurality of process chambers is completed, and configured such that an inert gas is supplied for every predetermined number of substrates among the plurality of substrates respectively supported by the plurality of supports.

Abstract: There is provided a technique that includes: a process chamber in which a substrate is processed; a gas supplier configured to supply a gas into the process chamber; at least one substrate mounting table disposed in the process chamber and including a substrate mounting surface on which the substrate is mounted; and an arm configured to transfer the substrate to the substrate mounting surface while supporting a lower surface of the substrate, wherein the arm includes a support that includes an inclination and is configured to support the substrate.

Abstract: There is provided a technique that includes abnormality detecting by picking up a sound generated from a transfer configured to be capable of transporting the substrate and comparing a waveform of sound data with a preset threshold value to detect an abnormality of the transfer; and failure detecting by picking up vibration of the transfer and comparing a waveform of vibration data with a preset threshold value to detect a failure of the transfer.

Abstract: Described is a technique capable of optimizing a timing of a maintenance process.

Abstract: There is provided a technique that includes a load port on which a plurality of storage containers, each storage container storing a plurality of substrates, are mounted, a plurality of process chambers configured to be capable of accommodating the substrates, a transfer part configured to transfer the substrates stored in each storage container to each of the process chambers; an operation part configured to, when performing the process in a state in which a substrate is not present in each process chamber, count first count data of data tables for corresponding process chambers; a memory configured to store the data tables; and a controller configured to assign first transfer flag data to a data table of a process chamber having largest first count data and configured to control the transfer part based on the first transfer flag data so as to transfer the substrates in the predetermined order.

Abstract: There is provided a technique that includes adjusting a pressure of each of a plurality of process chambers, by adjusting an opening degree of a pressure-adjusting valve included in a common gas exhaust pipe, which is connected to a plurality of process chamber exhaust pipes and is disposed to merge respective process chamber exhaust pipes on a downstream side of the plurality of process chamber exhaust pipes, to a predetermined opening degree and by exhausting an atmosphere of each of the process chambers from the plurality of process chamber exhaust pipes and the common gas exhaust pipe while supplying an inert gas to the plurality of process chambers; processing a substrate in each of the process chambers; and detecting a fluctuation of pressures in the process chamber exhaust pipes by measuring, by one or more pressure detectors, the pressures of the process chamber exhaust pipes.