Abstract: There is provided a technique that includes adjusting a pressure of each of a plurality of process chambers, by adjusting an opening degree of a pressure-adjusting valve included in a common gas exhaust pipe, which is connected to a plurality of process chamber exhaust pipes and is disposed to merge respective process chamber exhaust pipes on a downstream side of the plurality of process chamber exhaust pipes, to a predetermined opening degree and by exhausting an atmosphere of each of the process chambers from the plurality of process chamber exhaust pipes and the common gas exhaust pipe while supplying an inert gas to the plurality of process chambers; processing a substrate in each of the process chambers; and detecting a fluctuation of pressures in the process chamber exhaust pipes by measuring, by one or more pressure detectors, the pressures of the process chamber exhaust pipes.

Abstract: Described herein is a technique capable of suppressing generation of particles by removing by-products in a groove of a high aspect ratio. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; and a substrate support provided in the process chamber and including a plurality of supports where the substrate is placed, wherein the process chamber includes a process region where a process gas is supplied to the substrate and a purge region where the process gas above the substrate is purged, and the purge region includes a first pressure purge region to be purged at a first pressure and a second pressure purge region to be purged at a second pressure higher than the first pressure.

Abstract: There is provided a technique capable of improving a uniformity of a substrate processing on a substrate surface. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate processing room; a plasma generation room; a gas supplier supplying a gas into the plasma generation room; a first coil surrounding the plasma generation room and to which an electric power is supplied; and a second coil surrounding the plasma generation room and to which an electric power is supplied. An axial direction of the second coil is equal to that of the first coil, a winding diameter of the second coil is different from that of the first coil, and a peak of a voltage distribution generated by supplying the electric power to the second coil does not overlap with a peak of a voltage distribution generated by the first coil.

Abstract: Described herein is a technique capable of improving a uniformity of the characteristics of a film formed on a surface of a substrate by a rotary type apparatus. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a substrate support provided in the process chamber and including a plurality of placement parts on which the substrate is placed; a main nozzle provided so as to face a placement part among the plurality of the placement parts and including a first portion where no hole is provided so as to thermally decompose a process gas; and an auxiliary nozzle provided so as to face the placement part and including a second portion where no hole is provided so as to thermally decompose the process gas.

Abstract: There is provided technique that includes (a) adsorbing a first adsorption inhibitor to a first portion of a substrate in a first process chamber by heating the substrate to a first temperature and supplying the first adsorption inhibitor; (b) after (a), forming a film on a second portion of the substrate, where the first adsorption inhibitor is not adsorbed, by heating the substrate to a second temperature higher than the first temperature and supplying a processing gas; and (c) after (b), removing the first adsorption inhibitor adsorbed to the substrate by heating the substrate to a third temperature higher than the second temperature.

Abstract: There is provided a technique that includes at least one substrate processing apparatuses configured to process a substrate and comprising a first controller that is capable of controlling transmission of at least one type of data; a second controller that is capable of controlling operation of the at least one substrate processing apparatus; and a relay capable of receiving the data from at least one first controller and adjusting, when transmitting the data to the second controller, a reception interval from the first controller and a transmission interval to the second controller to be different from each other.

Abstract: Described herein is a technique capable of suppressing generation of particles by removing by-products in a groove of a high aspect ratio. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; and a substrate support provided in the process chamber and including a plurality of supports where the substrate is placed, wherein the process chamber includes a process region where a process gas is supplied to the substrate and a purge region where the process gas above the substrate is purged, and the purge region includes a first pressure purge region to be purged at a first pressure and a second pressure purge region to be purged at a second pressure higher than the first pressure.

Abstract: There is provided a technique that includes: receiving type information corresponding to substrate processing; reading the type information and processing time information corresponding to the type information from a memory; calculating a ratio of a processing time of a predetermined process to a total time of the processing time information; selecting one or more reactors according to the ratio; setting the one or more reactors to be capable of performing the predetermined process; transferring a substrate corresponding to the type information to the one or more reactors; and performing the predetermined process corresponding to the type information in the one or more reactors.

Abstract: There is provided technique that includes (a) adsorbing a first adsorption inhibitor to a first portion of a substrate in a first process chamber by heating the substrate to a first temperature and supplying the first adsorption inhibitor; (b) after (a), forming a film on a second portion of the substrate, where the first adsorption inhibitor is not adsorbed, by heating the substrate to a second temperature higher than the first temperature and supplying a processing gas; and (c) after (b), removing the first adsorption inhibitor adsorbed to the substrate by heating the substrate to a third temperature higher than the second temperature.

Abstract: There is provided a technique that includes: a process container processing one or more substrates; a support installed inside the process container and supporting the substrates on plane of the support; a first gas supplier capable of supplying first gas to first domain set in the process container; a second gas supplier capable of supplying second gas to second domain set in the process container; an exhaust buffer structure installed along outer circumference of the support; a first gas exhauster connected to the exhaust buffer structure and installed at downstream side of a flow of the first gas supplied from the first gas supplier; a second gas exhauster connected to the exhaust buffer structure and installed at a downstream side of a flow of the second gas supplied from the second gas supplier; and a third gas supplier capable of supplying a cleaning gas to the exhaust buffer structure.

Abstract: There is provided a technique that includes a plurality of substrate processing apparatuses each configured to process a substrate; a first controller installed in each substrate processing apparatus among the plurality of substrate processing apparatuses and configured to control the substrate processing apparatus; a relay configured to receive a plurality of types of data from the first controller; and a second controller configured to receive the data from the relay, wherein the relay is configured to change a transmission interval of the data to the second controller according to one of each type of the data and each first controller, or according to both of each type of the data and each first controller.

Abstract: There is provided a technique that includes: (a) loading a substrate into a process container; (b) heating the substrate by supplying a first gas, which is heated when passing through a first heater installed at a first gas supply line, to the substrate via a gas supplier; (c) supplying a second gas, which flows through a second gas supply line different from the first gas supply line, to the substrate mounted on a substrate mounting table in the process container, via the gas supplier; and (d) lowering a temperature of the gas supplier by supplying a third gas, which has a temperature lower than that of the first gas, to the gas supplier between (b) and (c).

Abstract: There is provided a technique capable of improving uniformity of surface temperature of a substrate in plasma process. According to one aspect thereof, a substrate processing apparatus includes: a process chamber; a substrate support; a first heater in the substrate support for heating a substrate; a second heater for heating an outer periphery of the substrate; a gas supplier for supplying a process gas; a plasma generator; and a controller for performing: (a) heating the substrate to at least a temperature between a first temperature and a second temperature; and (b) supplying the process gas activated by the plasma generator while setting a temperature of the second heater to be higher than that of the second heater at which (a) is performed such that a temperature deviation on a surface of the substrate is within a predetermined temperature deviation range.

Abstract: A substrate processing apparatus includes a plurality of storage containers mounted on a load port, each storage container storing a plurality of substrates; a plurality of process chambers for accommodating the substrates; a transfer part for transferring the substrates; a memory for storing data tables, including first count data, for the process chambers; an operation part, when multiple substrates in the first storage container is transferred to the process chambers in a predetermined order and performs a predetermined process in the process chambers in a state in which no substrate is present in a first process chamber, counting first count data for the first process chamber; and a controller assigns flag data to a data table of a process chamber having largest first count data and when multiple substrates in the second storage container is transferred, control the transfer part based on the flag data from a different process chamber.

Abstract: Described herein is a technique capable of reducing an amount of moisture in a low temperature region in a substrate processing apparatus provided with a transfer chamber. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber provided with a heater; a load lock chamber; a transfer chamber provided between the process chamber and the load lock chamber and including a first region provided adjacent to the process chamber and a second region provided more adjacent to the load lock chamber than the first region and whose temperature is lower than a temperature of the first region; a detector capable of detecting an amount of moisture in the transfer chamber; and an inert gas supplier capable of supplying an inert gas toward the second region in the transfer chamber.

Abstract: There is provided a technique that includes: substrate mounting plate where substrates are arranged circumferentially; rotator rotating the substrate mounting plate; gas supply structure disposed above the substrate mounting plate from center to outer periphery thereof; gas supplier including the gas supply structure and controlling supply amount of gas supplied from the gas supply structure; gas exhaust structure installed above the substrate mounting plate at downstream side of the gas supply structure in rotation direction; gas exhauster including the gas exhaust structure and controlling exhaust amount of gas exhausted from the gas exhaust structure; and gas main component amount controller including the gas supplier and the gas exhauster and controlling gas main component amount in the gas supplied from the gas supply structure to the substrates and the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the mounting plate.

Abstract: Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) transferring a substrate from a storage container storing one or more substrates including the substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, and setting the process chamber to a maintenance enable state after the substrate processing is completed by stopping the one or more substrates from being transferred into the process chamber.

Abstract: Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) transferring a substrate from a storage container storing one or more substrates including the substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, and setting the process chamber to a maintenance enable state after the substrate processing is completed by stopping the one or more substrates from being transferred into the process chamber.

Abstract: There is provided a technique that includes adjusting a pressure of each of a plurality of process chambers, by adjusting an opening degree of a pressure-adjusting valve included in a common gas exhaust pipe, which is connected to a plurality of process chamber exhaust pipes and is disposed to merge respective process chamber exhaust pipes on a downstream side of the plurality of process chamber exhaust pipes, to a predetermined opening degree and by exhausting an atmosphere of each of the process chambers from the plurality of process chamber exhaust pipes and the common gas exhaust pipe while supplying an inert gas to the plurality of process chambers; processing a substrate in each of the process chambers; and detecting a fluctuation of pressures in the process chamber exhaust pipes by measuring, by one or more pressure detectors, the pressures of the process chamber exhaust pipes.

Abstract: There is provided a technique that includes a load port on which a plurality of storage containers, each storage container storing a plurality of substrates, are mounted, a plurality of process chambers configured to be capable of accommodating the substrates, a transfer part configured to transfer the substrates stored in each storage container to each of the process chambers; an operation part configured to, when performing the process in a state in which a substrate is not present in each process chamber, count first count data of data tables for corresponding process chambers; a memory configured to store the data tables; and a controller configured to assign first transfer flag data to a data table of a process chamber having largest first count data and configured to control the transfer part based on the first transfer flag data so as to transfer the substrates in the predetermined order.