Abstract: Provided is an electrophotographic photosensitive member including a support, a charge-generating layer, a first hole-transporting layer, and a second hole-transporting layer, wherein the second hole-transporting layer contains a hole-transportable compound represented by the formula (1) (mass: W1, energy value of the highest occupied molecular orbital: CTM1HOMO), and a hole-transportable compound represented by the formula (2) (mass: W2) and/or a hole-transportable compound represented by the formula (3) (mass: W3) (energy value of the highest occupied molecular orbital: CTM2HOMO), wherein a value calculated from the expression (I) is from 0.05% by mass to 5.0% by mass, and wherein the expression (II) is satisfied: (W2+W3)/(W1+W2+W3)×100 (% by mass)—Expression (I); and 0.05 (eV)?|CTM2HOMO|-|CTM1HOMO|?0.30 (eV)—(II).

Abstract: A method for producing an arylamine compound, wherein a chemical compound represented by formula (B) is reacted by addition reaction with a carbon atom having a bound hydrogen atom on a benzene ring of a chemical compound represented by formula (A), in the presence of one or more acids selected from Lewis acids or sulfonic acids; to produce a chemical compound represented by formula (C) including a partial structure represented by formula (D).

Abstract: A device includes an elastic base, a device body provided on the base, a wiring line provided on the base, a coupling member coupled to the wiring line, and an electrically conductive adhesive layer provided between the wiring line and the coupling member. The wiring line extends from the electrically conductive adhesive layer to the device body. The wiring line has a wiring portion overlapping with the electrically conductive adhesive layer. The degree of polymerization of the electrically conductive adhesive layer decreases in the extending direction of the wiring portion.

Abstract: A transparent electrode device includes: a substrate; an electrode region formed on the substrate using a transparent electroconductive film; and an insulating region disposed on the substrate and adjacent to the electrode region, in which a plurality of random island patterns including patterns having a width of 100 ?m or greater, formed using the transparent electroconductive film, are disposed mutually distanced from one another.

Abstract: A sensor apparatus includes: a sensor panel that includes an input operation surface and is configured to detect positional coordinates of a detection object that comes into contact with the input operation surface; a casing; and a pressure-sensitive sensor that includes a first electrode fixed on the sensor panel side, a second electrode fixed on the casing side, and an elastic member that is provided between the sensor panel and the casing and elastically supports the sensor panel with respect to the casing, includes, between the first electrode and the second electrode, a first area formed with a first capacitance and a second area formed with a second capacitance larger than the first capacitance, and is configured to detect a pressing force input to the input operation surface as a change in a capacitance between the first electrode and the second electrode.

Abstract: A first defect classification section uses a pre-inspection test target as the inspected piece, and classifies the defects, based on results of the defect inspection executed a plurality of times by the defect detection system, into first defects detected constantly in each of the plurality of times of inspection, and into second defects detected only in a part of, but not in the residual part of the plurality of times of inspection.

Abstract: A transparent electrode device includes: a substrate; an electrode region formed on the substrate using a transparent electroconductive film; and an insulating region disposed on the substrate and adjacent to the electrode region, in which a plurality of random island patterns including patterns having a width of 100 ?m or greater, formed using the transparent electroconductive film, are disposed mutually distanced from one another.

Abstract: A defect review apparatus includes a storage device which stores data about a defect of an inspection target object; a first imaging device which captures an image located in a position on a surface of the inspection target object, the position being specified by information regarding the position of the inspection target object which has been input; and a control device which controls the first imaging device. The storage device stores: first defect detection data including a defect number as which the defect of the inspection target object detected by a first defect detection process is labeled, and information regarding the position of the defect; and second defect data including a defect number as which the defect of the inspection target object detected by a second defect detection process is labeled, and information regarding its position.

Abstract: A distinguishing size for distinguishing a pseudo defect from a defect caused by a process trouble is stored in a first storage area. Defect data are stored in a second storage area. A processing unit detects a defect on a wafer surface, and stores the defect data in the second storage area. Before a defect detection process is completed for all areas of the wafer surface, a size of a defect detected in a partial area is compared with the distinguishing size stored in the first storage area. If the detected defect has a size equal to or larger than the distinguishing size, an alarm is output through an output unit, whereas if a defect having a size equal to or larger than the distinguishing size is not detected, the defect detection process is executed for the area still not subjected to the defect detection process.

Abstract: A sensor apparatus includes: a sensor panel that includes an input operation surface and is configured to detect positional coordinates of a detection object that comes into contact with the input operation surface; a casing; and a pressure-sensitive sensor that includes a first electrode fixed on the sensor panel side, a second electrode fixed on the casing side, and an elastic member that is provided between the sensor panel and the casing and elastically supports the sensor panel with respect to the casing, includes, between the first electrode and the second electrode, a first area formed with a first capacitance and a second area formed with a second capacitance larger than the first capacitance, and is configured to detect a pressing force input to the input operation surface as a change in a capacitance between the first electrode and the second electrode.

Abstract: A sensor element is provided that includes a flexible transparent base material, a first conductive pattern, and a second conductive pattern. The flexible transparent base material has a first surface and a second surface opposite to the first surface. The first conductive pattern is configured to electrostatically detect an operation position of an input operator in a first direction, the first conductive pattern being formed on the first surface. The second conductive pattern is configured to electrostatically detect an operation position of the input operator in a second direction different from the first direction, the second conductive pattern being formed on the second surface.

Abstract: Scattered light from the surface of a sample subjected to the same process as a process for an inspection object is observed, a defect is detected from an intensity of scattered light, and a position of the detected defect and an intensity of scattered light caused by the detected defect are acquired. Defects detected are classified into a group detectable by observing secondary electrons emitted when an electron beam is applied to the surface of the sample and a group not detectable. A decision threshold value of a scattered light intensity for extracting defects to be counted is determined, in accordance with a result of classification by the above steps and the intensity of scattered light caused by the detected defect.

Abstract: A reference substrate for defect detection sensitivity calibration has: patterns and programmed defective portions which are cone defects with different sizes and are formed at random on a silicon substrate. By using the reference substrate for defect detection sensitivity calibration, it is possible to obtain an index, usable in manufacturing management, for determining sensitivity adjustment after a lamp is replaced in an illumination part of a defect inspection apparatus.

Abstract: A defect review apparatus includes a storage device which stores data about a defect of an inspection target object; a first imaging device which captures an image located in a position on a surface of the inspection target object, the position being specified by information regarding the position of the inspection target object which has been input; and a control device which controls the first imaging device. The storage device stores: first defect detection data including a defect number as which the defect of the inspection target object detected by a first defect detection process is labeled, and information regarding the position of the defect; and second defect data including a defect number as which the defect of the inspection target object detected by a second defect detection process is labeled, and information regarding its position.

Abstract: A method of inspecting defects on an object includes irradiating predetermined particles with a laser beam to measure first scattered light intensities, irradiating plural types of defects with the laser beam to measure second scattered light intensities, determining types of some defects selected out of the plural types of defects using the first scattered light intensities, setting a discrimination line indicating a boundary value of the second scattered light intensities based on the determination, and discriminating, using the discrimination line, defects on the object.

Abstract: Disclosed is a surface inspection device that performs a defect inspection throughout a surface of a wafer. In the defect detection using a defect review SEM, an X-Y coordinate system is set throughout a surface (excluding a round end face) of a product wafer to allow the inspection throughout the surface of the product wafer. Therefore, the defect detection can be performed also in an area other than an effective chip area. Further, the inspection results of the area are stored in relation to the coordinates in a position where the inspection results are acquired. Therefore, the inspection results can be effectively used for an analysis and a defect cause can be investigated with a higher degree of accuracy. As a result, the quality and yield of chips can be improved.

Abstract: A distinguishing size for distinguishing a pseudo defect from a defect caused by a process trouble is stored in a first storage area. Defect data are stored in a second storage area. A processing unit detects a defect on a wafer surface, and stores the defect data in the second storage area. Before a defect detection process is completed for all areas of the wafer surface, a size of a defect detected in a partial area is compared with the distinguishing size stored in the first storage area. If the detected defect has a size equal to or larger than the distinguishing size, an alarm is output through an output unit, whereas if a defect having a size equal to or larger than the distinguishing size is not detected, the defect detection process is executed for the area still not subjected to the defect detection process.

Abstract: A method of inspecting defects on an object includes irradiating predetermined particles with a laser beam to measure first scattered light intensities, irradiating plural types of defects with the laser beam to measure second scattered light intensities, determining types of some defects selected out of the plural types of defects using the first scattered light intensities, setting a discrimination line indicating a boundary value of the second scattered light intensities based on the determination, and discriminating, using the discrimination line, defects on the object.

Abstract: A semiconductor wafer whose position information on defects on a surface of the semiconductor wafer is already known, is placed on a stage of an imaging apparatus. Positions in a height direction of a plurality points on the surface of the semiconductor wafer are measured. In accordance with the measured positions in the height direction, the surface is partitioned into a plurality of partial areas. One partial area for which images of defects are still not acquired, is selected from the partial areas. The height of the stage is adjusted so as to set the selected partial area in an auto focusing range. Defects in the selected partial area are imaged with the imaging apparatus to acquire images of defects. Steps between the step of selecting the partial area and the step of acquiring the images of defects are repeated until images of defects in all partial areas are acquired.

Abstract: An inspecting method is capable of efficiently inspecting a wafer. According to the inspecting method, the chip area of a wafer is inspected for defects, and based on the results, a defect density D0p of each of peripheral-zone chips in the chip area which are located closely to the peripheral area of the wafer is calculated. A peripheral-zone chip with a high defect density D0p is selected, and an area in the peripheral area which is outward of the selected peripheral-zone chip is inspected for defects. Since only the area in the peripheral area which is located outward of the peripheral-zone chip selected based on the defect density D0p is inspected for defects, the wafer is inspected efficiently.