Abstract: A semiconductor device may include a first pattern including any one of a selector layer or a variable resistance layer and a middle electrode layer disposed over any one of the selector layer or the variable resistance layer; and a second pattern disposed over the first pattern and including the other one of the selector layer or the variable resistance layer, wherein a width of the second pattern may be the same as or greater than a width of the first pattern.

Abstract: In an inspection apparatus for inspecting an inspection target device formed on an inspection object, the inspection target device is a back-illuminated imaging device into which light is incident from a rear surface opposite to a side of a wiring layer. The inspection apparatus includes a stage having the inspection object placed such that the inspection object faces the rear surface. The stage includes a light transmitter made of a light-transmissive material. The inspection object is placed on the light transmitter below which a light illuminator is disposed. The light illuminator includes a flat light guide plate having a facing surface facing the inspection object. A light source is provided laterally outside the light guide plate configured to diffuse light emitted from the light source incident from a side end surface of the light guide plate, and to emit the light as planar light from the facing surface.

Abstract: According to one embodiment, a magnetic memory device includes a first wiring line extending in a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending in a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line and including a magnetoresistance effect element and a switching element which are stacked in a third direction intersecting the first direction and the second direction. The first wiring line includes a first conductive layer and a second conductive layer provided on the first conductive layer and formed of a material containing carbon (C).

Abstract: According to one embodiment, a magnetic memory device includes a lower insulating layer, first and second conductive portions provided in the lower insulating layer, first and second memory cells provided on the lower insulating layer and on the respective first and second conductive portions, and each including a magnetoresistance effect element, a switching element and a bottom electrode connected to corresponding one of the first and second conductive portions. As viewed from a third direction, a width of each of the first and second conductive portions is less than a width of a corresponding bottom electrode. The lower insulating layer has a void under a region between the first and second memory cells.

Abstract: According to one embodiment, a magnetic memory device includes an electrode, and a magnetoresistance effect element provided on the electrode. The electrode includes a first electrode portion and a second electrode portion provided between the magnetoresistance effect element and the first electrode portion and containing a metal element selected from molybdenum (Mo) and ruthenium (Ru).

Abstract: A fixing belt includes a base member containing a metal, a sliding layer containing a filler and formed on a base member inner side, and a separation layer formed on a base member outer side. Assume that (i) a sliding layer cross section is obtained by cutting the sliding layer along a sliding layer thickness direction and is divided into sections each having a length that is the same as a sliding layer thickness in a direction perpendicular to the thickness direction, and (ii) a ratio of a filler area to a sliding layer area in each cross section sections is an area ratio. A period coefficient is calculated using the formula (Ave %?Min %)/Ave %, where an average of area ratios of filler areas in all the sections is Ave % and a minimum of the area ratios is Min %, and the calculated period coefficient is 0.6 or more.

Abstract: A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

Abstract: This inspection apparatus is for inspecting an inspection subject device. The inspection subject device is formed on an object to be inspected, and is a reverse-side irradiation-type imaging device into which light enters from the reverse side opposite to the side where a wiring layer is provided. This inspection apparatus has: a placement table having a transparent surface on which the object to be inspected is placed; a light irradiation mechanism that is provided in the placement table and that irradiates the to-be-inspected object placed on the placement table with light through the placement surface; and an acquisition unit that acquires in-plane distribution of illuminance of light from the placement table.

Abstract: A data collection device is mounted on a work machine and collects data that is collectable from the work machine. The data collection device includes a collectable list generation unit and a collectable list notification unit. The collectable list generation unit updates a collectable list indicating a type of data that is collectable from the work machine, in a case in which a change has occurred in the type of data that is collectable. The collectable list notification unit transmits the updated collectable list to an external device outside the work machine.

Abstract: A magnetoresistance memory device includes; first and second switching elements; first and second layer stacks respectively on the first and second switching elements; a first insulator on a side surface of the first layer stack; and a second insulator on a side surface of the second layer stack. Each of the first and second switching elements includes a variable resistance material. Each of the first and second layer stacks includes first and second ferromagnetic layers and an insulating layer between the first and second ferromagnetic layers. A narrowest interval between the first and second insulators is narrower than a narrowest interval between the first and second switching elements.

Abstract: According to one embodiment, a magnetic: memory device includes a stacked structure in which a magnetoresistance effect element and a switching element are stacked. The switching element is provided on a lower layer side of the magnetoresistance effect element, and when viewed in a stacking direction of the magnetoresistance effect element and the switching element, a pattern of the switching element is located inside a pattern of the magnetoresistance effect element.

Abstract: According to one embodiment, a magnetic memory device includes a plurality of memory cells each including a magnetoresistance effect element and a switching element provided on a lower layer side of the magnetoresistance effect element and connected in series to the magnetoresistance effect element. The switching element includes a bottom electrode, a top electrode and a switching material layer provided between the bottom electrode and the top electrode, and the top electrode includes a first portion formed of a first material and a second portion provided on a lower layer side of the first portion and formed of a second material different from the first material.

Abstract: A control method of an inspection apparatus including a mounting stage on which a substrate having a plurality of inspection objects is mounted, a plurality of sections being formed with respect to the mounting stage and a heater controllable to heat for each of the sections includes when inspecting a first inspection object to be inspected among the plurality of inspection objects, causing the heater to heat a section corresponding to the first inspection object and a section corresponding to a second inspection object to be inspected next.

Abstract: A magnetoresistance memory device includes a first conductor, a first insulator covering a side surface of the first conductor, a second conductor on the first conductor that are substantially made of a non-magnetic non-nitrogen material. The device includes a variable resistance material, a third conductor, a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer. The third conductor, a fourth conductor on the second ferromagnetic layer, and a second insulator covering side surfaces of the first and second ferromagnetic layers and insulating layer are substantially made of a non-nitrogen material. A third insulator is on the second insulator.

Abstract: A fixing film includes a cylindrical base layer, an elastic layer formed on an outer peripheral surface of the cylindrical base layer, and a separation layer formed on an outer peripheral surface of the elastic layer. The separation layer includes fluororesin, and a degree of orientation of the fluororesin is greater than or equal to 40% and smaller than or equal to 59%.

Abstract: A fixing member includes a slide layer having a cylindrical shape and a thickness of 8 micrometers (?m) or more and 20 ?m or less, a base layer formed on an outer side of the slide layer, and a surface layer formed on an outer side of the base layer. The slide layer has Benard convection cell structure having an average diameter of 50 ?m or more and 200 ?m or less on a surface that is not in contact with the base layer, and the slide layer includes an additive having a median particle diameter D50 of 4.5 ?m or less and an aspect ratio of 30 or more and less than 50.

Abstract: A fixing belt includes a base member containing a metal, a sliding layer containing a filler and formed on a base member inner side, and a separation layer formed on a base member outer side. Assume that (i) a sliding layer cross section is obtained by cutting the sliding layer along a sliding layer thickness direction and is divided into sections each having a length that is the same as a sliding layer thickness in a direction perpendicular to the thickness direction, and (ii) a ratio of a filler area to a sliding layer area in each cross section sections is an area ratio. A period coefficient is calculated using the formula (Ave% - Min%)/Ave%, where an average of area ratios of filler areas in all the sections is Ave% and a minimum of the area ratios is Min%, and the calculated period coefficient is 0.6 or more.

Abstract: An inspection apparatus for inspecting a backside irradiation type imaging device formed on an inspection object includes: a stage on which the inspection object is mounted such that the stage faces a rear surface of the backside irradiation type imaging device, wherein the stage includes: a transmitter including a flat plate formed of a light transmitting material, and configured to mount the inspection object on the transmitter; and a light emitter disposed at a location facing the inspection object with the transmitter interposed between the light emitter and the inspection object, and configured to emit light toward the transmitter, and wherein the transmitter transmits the light from the light emitter while diffusing the light.

Abstract: A stage on which an inspection object having an electronic device against which a contact terminal of a probe card of an inspection apparatus is pressed by a load applied thereto is placed, includes a first cooling plate including a first coolant flow path formed therein, a heating source mounted on the first cooling plate and including a plurality of light emitting elements so as to heat the inspection object, a transparent member provided on the heating source and transmitting light output from the heating source, a second cooling plate provided on the transparent member so as to hold the inspection object and including a second coolant flow path formed therein, and a transparent resin layer filled between the first cooling plate and the transparent member so as to cover the heating source.

Abstract: According to one embodiment, a magnetoresistive memory device includes: a first conductor; a layer stack; an insulator on a side surface of the layer stack; a second conductor on a second surface of the layer stack; a third conductor; and a fourth conductor on the third conductor. The layer stack includes a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer and has a first surface in contact with the first conductor. The second surface is at an opposite side of the first surface. The third conductor has a portion on the second conductor and a portion on a side surface of the insulator.