Naoki Fujiwara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: A semiconductor device includes an electrode which is arranged on an organic material with an insulation film interposed therebetween and which does not easily peel away from the organic material along with the insulation film. An insulation film in a region including pad portions of a phase shift electrode and a modulation electrode has openings at the centers of the pad portions of the phase shift electrode and the modulation electrode, the edge portions of which are formed on the phase shift electrode and the modulation electrode. In this way, the adjoining edges of the phase shift electrode and modulation electrode and the insulation film are all covered by the insulation film so as not to be exposed to the atmosphere.
April 18, 2019
Date of Patent:
January 17, 2023
Nippon Telegraph and Telephone Corporation
Naoki Fujiwara, Yuta Ueda, Takahiko Shindo
Abstract: To provide a non-aqueous electrolyte solution, a non-aqueous secondary battery, a cell pack, and a hybrid power system, capable of improving desired battery performance in an acetonitrile electrolyte solution, the non-aqueous electrolyte solution contains a non-aqueous solvent, PO2F2 anions, and cyclic acid anhydride.
Abstract: A semiconductor optical device includes an SOI substrate having a waveguide of silicon, and at least one gain region of a group III-V compound semiconductor having an optical gain bonded to the SOI substrate. The waveguide has a bent portion and multiple linear portions extending linearly and connected to each other through the bent portion. The gain region is disposed on each of the multiple linear portions.
Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.
Abstract: To provide a non-aqueous electrolyte solution, a non-aqueous secondary battery, a cell pack, and a hybrid power system, capable of improving desired battery performance using acetonitrile, the non-aqueous electrolyte solution contains acetonitrile, lithium salt, and cyclic acid anhydride.
Abstract: A photovoltaic power generation system includes a plurality of photovoltaic cell arrays, a plurality of power conditioners connected respectively with the plurality of photovoltaic cell arrays, and a high order device connected to the plurality of power conditioners. The high order device is configured to execute: a first output control to adjust output power of a designated power conditioner to a predetermined output power amount being set in advance; and a second output control to adjust output power from a remaining power conditioner which is other than the designated power conditioner among the plurality of power conditioners. The high order device is configured to execute characteristic-data acquisition to acquire an input/output electrical characteristic of the designated power conditioner during execution of the first output control.
September 19, 2017
Date of Patent:
November 8, 2022
TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
Abstract: A mold, system and method for manufacturing a part includes injection molding a substrate in a single injection mold and optionally trimming the panel substrate. The substrate can have a first configuration or a second, different configuration. Trimming of the substrate can occur when the substrate has the first configuration to define an aperture in the substrate.
Abstract: A vehicle monitoring apparatus includes a hardware processor functioning as an image acquisition unit, an abnormality information acquisition unit, a damage determination unit, and a damage reporting unit. The image acquisition unit serves to acquire a captured image including an image representation of an exterior of a vehicle body of a vehicle. The abnormality information acquisition unit serves to acquire vehicle-body abnormality information indicating an abnormality in the vehicle body. The damage determination unit serves to determine presence or absence of damage to the vehicle body on the basis of the captured image and the vehicle-body abnormality information. The damage reporting unit serves to report, to an information processing apparatus, a damage report including the captured image or an image generated on the basis of the captured image. The damage report is reported in accordance with on a result of the determination on the damage.
Abstract: A nip formation member includes a base, a high thermal conduction member, and a securing member. The high thermal conduction member has a thermal conductivity greater than a thermal conductivity of the base. The securing member is independent from the base and the high thermal conduction member. The securing member is configured to restrict movement of the base relative to the high thermal conduction member.
Abstract: A cartridge mountable to and dismountable from a main assembly of an image forming apparatus includes a memory, a guide configured to guide a portion-to-be-guided provided in the main assembly and to guide a main assembly contact provided in the main assembly to a memory contact of the memory when the cartridge is mounted in the main assembly, and a grip portion. The guide is provided at a bottom of the cartridge when the cartridge is hung by gripping the grip portion and constitutes a part of a supporting portion configured to support the cartridge when the cartridge is placed on a horizontal placement surface. The guide has a chamfered surface formed by being chamfered. When the cartridge is supported at the supporting portion, the chamfered surface opposes the horizontal placement surface, and a surface of the memory contact is inclined with respect to the horizontal placement surface.
Abstract: A device determines a propagation time of an acoustic signal through cross-correlation analysis between a transmission signal and a reception signal. The device generates the transmission signal to satisfy (1) a ratio of a height of a peak other than a maximum peak in an autocorrelation function of the transmission signal to a height of the maximum peak being 0.8 or less and (2) a duration of the transmission signal being at least five times a shortest period of the transmission signal or at least 20 times a half width at half maximum of the autocorrelation function of the transmission signal.
Abstract: Provided are: a near infrared light-emitting semiconductor element that does not contain any harmful elements and that makes it possible to obtain near infrared light of a stable wavelength in a narrow band regardless of the operating environment; and a method for producing the near infrared light-emitting semiconductor element. GaN is used in the method for producing a near infrared light-emitting semiconductor element, and an active layer added in order to substitute Tm with Ga is formed on GaN in a reaction container at a growth rate of 0.1-30 ?m/h without removal from said reaction container using an organometallic vapor phase growth method under temperature conditions of 600-1400° C. in a series of formation steps including formation of a p-type layer and an n-type layer. GaN is used in the near infrared light-emitting semiconductor element, and said near infrared light-emitting semiconductor element includes an active layer sandwiched between an n-type layer and a p-type layer on a substrate.
February 28, 2022
September 1, 2022
Shuhei ICHIKAWA, Naoki YOSHIOKA, Yasufumi FUJIWARA, Jun TATEBAYASHI
Abstract: A method of manufacturing a semiconductor optical device includes a step of bonding a semiconductor element to a substrate that includes silicon, the semiconductor element being made of a III-V compound semiconductor and having optical gain; after the step of bonding the semiconductor element, a step of molding the semiconductor element by wet-etching; and after the step of molding the semiconductor element, a step of forming a mesa at the semiconductor element. The substrate includes a waveguide, a groove that extends along the waveguide, a terrace that is positioned on a side of the groove opposite to the waveguide, and a wall that covers the groove. The step of bonding the semiconductor element is a step of bonding the semiconductor element to the waveguide, the groove, the terrace, and the wall of the substrate.
Abstract: An image forming apparatus includes an endless image bearing belt, a first roller, a second roller, a rotatable member, a holding member, a feeding unit, and a guiding member. The guiding member is provided on a side downstream of the feeding unit and upstream of the transfer nip with respect to a recording material feeding direction at a position opposing a stretching portion stretched by the first roller and the second roller for from the image bearing belt and guides a recording material, to the transfer nip, fed by the feeding unit. The guiding member is fixed to the holding portion.
Abstract: An image forming apparatus includes an endless image bearing belt, a first roller, a second roller, a rotatable member, a feeding unit, a first recording material guiding member, and a second recording material guiding member. The second recording material guiding member is fixed to the first recording material guiding member so as to form a feeding path of a recording material with an interval between itself and the first recording material guiding member.
Abstract: There is provided an antenna for inductively coupled plasma excitation. The antenna comprises a plurality of coil assemblies and a conductive plate connected to the plurality of coil assemblies, the conductive plate having a central opening and at least one plate terminal.
Abstract: A semiconductor optical device includes a substrate containing silicon, and a semiconductor element bonded to the substrate, the semiconductor element being formed of a compound semiconductor and having an optical gain. The substrate includes a waveguide and a first region connected to the waveguide in an extension direction of the waveguide. The first region includes a plurality of recesses and a plurality of protrusions. Each of the plurality of recesses is recessed in a thickness direction of the substrate compared to a surface of the substrate to which the semiconductor element is bonded. Each of the plurality of protrusions protrudes in the thickness direction of the substrate from bottom surfaces of the plurality of recesses. The plurality of recesses and the plurality of protrusions are alternately disposed in a direction intersecting with the extension direction of the waveguide. The semiconductor element is bonded to the first region.
Abstract: Provided is a semiconductor light source element or an optical device including a semiconductor optical waveguide of a high-mesa semi-insulated embedded structure having a window structure made of the same material as an overclad layer at a light emission end, and a method for manufacturing thereof, in which an active layer at a portion of the window structure is removed, and then the same layer as the overclad layer is formed.
Abstract: A 1.3 ?m-band wavelength-tunable DBR laser in which a wavelength-tunable amount is extended is disclosed. The wavelength-tunable DBR laser according to an embodiment of the present invention is a wavelength-tunable DBR laser in which an active region having an optical gain and a DBR region including a diffraction grating are integrated monolithically and an oscillation wavelength is changed by injecting a current into the DBR region. At a boundary between a p-side clad layer and a core layer in the DBR region, an electron barrier layer being p-type doped and having a bandgap greater than in the p-side clad layer is further included. At a boundary between an n-side clad layer and the core layer in the DBR region, a hole barrier layer being n-type doped and having a bandgap greater than in the n-side clad layer is further included.
Abstract: A method for manufacturing a monolithically integrated semiconductor optical integrated element comprising a DFB laser, an EA modulator, and a SOA disposed in a light emitting direction, comprising the step of forming a semiconductor wafer on which the elements are two-dimensionally arrayed and aligned the optical axes; cleaving the semiconductor wafer along a plane orthogonal to the light emitting direction to form a semiconductor bar including a plurality of the elements arranged one-dimensionally along a direction orthogonal to the light emitting direction such that the elements adjacent to each other share an identical cleavage end face as a light emission surface; inspecting the semiconductor bar by driving the SOA and the DFB laser through a connection wiring part together; and separating out the semiconductor bar after the inspection to cut the connection wiring part connecting the electrode of the SOA and the DFB laser to isolate from each other.
February 28, 2019
Date of Patent:
June 21, 2022
NIPPON TELEGRAPH AND TELEPHONE CORPORATION