Abstract: Provided is a semiconductor light source element or an optical device including a semiconductor optical waveguide of a high-mesa semi-insulated embedded structure having a window structure made of the same material as an overclad layer at a light emission end, and a method for manufacturing thereof, in which an active layer at a portion of the window structure is removed, and then the same layer as the overclad layer is formed.

Abstract: There is provided an information processing apparatus and an information processing method that can provide more useful information for an action plan of an autonomous mobile body, the information processing apparatus including an action recommendation unit configured to present a recommended action recommended to an autonomous mobile body, to the autonomous mobile body that performs an action plan based on situation estimation. The action recommendation unit determines the recommended action on the basis of an action history collected from a plurality of the autonomous mobile bodies, and on the basis of a situation summary received from a target autonomous mobile body that is a target of recommendation. The information processing method includes presenting, by a processor, a recommended action recommended to an autonomous mobile body, to the autonomous mobile body that performs an action plan based on situation estimation.

Abstract: A semiconductor optical device includes a first n-type III-V group compound semiconductor layer, an active layer, a tunnel junction structure including a p-type III-V group compound semiconductor layer and a second n-type III-V group compound semiconductor layer, and a third n-type III-V group compound semiconductor layer. The first n-type III-V group compound semiconductor layer, the active layer, the p-type III-V group compound semiconductor layer, the second n-type III-V group compound semiconductor layer, and the third n-type III-V group compound semiconductor layer are stacked in this order. The second n-type III-V group compound semiconductor layer has an n-type dopant concentration higher than an n-type dopant concentration of the third n-type III-V group compound semiconductor layer. The p-type III-V group compound semiconductor layer has a strain.

Abstract: A method of manufacturing an optical filter is a method of manufacturing an optical filter including two or more waveguides having four or more sections in which a number of modes of light propagating through the four or more sections is two or more. The method includes designing lengths of the four or more sections, and forming the two or more waveguides based on the lengths of the four or more sections. The designing includes designing the lengths of the four or more sections based on differentiation of propagation constants of the sections with respect to a temperature and widths of the sections.

Abstract: A method according to the present disclosure is a method of manufacturing a multiplexer/demultiplexer including a substrate, a first port for inputting light, and a second port for outputting light, the first port and the second port being provided in the substrate. The method includes designing positions of a plurality of holes such that three adjacent holes among the plurality of holes are arranged in a triangle lattice, and forming the plurality of holes in a surface of the substrate.

Abstract: A substrate processing apparatus that generates a third processing liquid using a first processing liquid and a second processing liquid, include a first supply path connected to a discharge port, a plurality of second supply paths respectively connected to the first supply path at a plurality of mixing positions having different flow-path lengths to the discharge port, a first supplier that supplies the first processing liquid to the first supply path, and a second supplier that supplies the second processing liquid to the first supply path through the plurality of second supply paths, wherein at the plurality of mixing positions of the first supply path, liquid in the first supply path is sequentially mixed with the second processing liquid, with mixing starting at the mixing position that is the farthest from the discharge port and finishing at the mixing position that is the closest from the discharge port.

Abstract: A method of manufacturing a semiconductor optical device includes a step of bonding a semiconductor element to a substrate that includes silicon, the semiconductor element being made of a III-V compound semiconductor and having optical gain; after the step of bonding the semiconductor element, a step of molding the semiconductor element by wet-etching; and after the step of molding the semiconductor element, a step of forming a mesa at the semiconductor element. The substrate includes a waveguide, a groove that extends along the waveguide, a terrace that is positioned on a side of the groove opposite to the waveguide, and a wall that covers the groove. The step of bonding the semiconductor element is a step of bonding the semiconductor element to the waveguide, the groove, the terrace, and the wall of the substrate.

Abstract: A semiconductor optical device in which a light emitting region that emits light and a reflecting region that reflects the light to the light emitting region side are integrated includes a core layer that is provided in the light emitting region, and a waveguide layer that is provided in the reflecting region, that is optically coupled to the core layer, and that has a band gap that is larger than energy of the light. The reflecting region has a first thyristor that overlaps the waveguide layer in a direction that intersects a propagation direction of the light.

Abstract: There is provided an information processing apparatus and an information processing method that can provide more useful information for an action plan of an autonomous mobile body, the information processing apparatus including an action recommendation unit configured to present a recommended action recommended to an autonomous mobile body, to the autonomous mobile body that performs an action plan based on situation estimation. The action recommendation unit determines the recommended action on the basis of an action history collected from a plurality of the autonomous mobile bodies, and on the basis of a situation summary received from a target autonomous mobile body that is a target of recommendation. The information processing method includes presenting, by a processor, a recommended action recommended to an autonomous mobile body, to the autonomous mobile body that performs an action plan based on situation estimation.

Abstract: It is an object to provide an optical filter, a method of manufacturing an optical filter, a method of designing, a design apparatus, and a program for designing non-transitory computer-readable recording medium which can suppress both the temperature dependency and the waveguide length. An optical filter includes three or more waveguides, and a plurality of sections provided in the three or more waveguides, respectively. Modes of light propagating through the sections of the three or more waveguides are different from each other.

Abstract: An optical filter includes a first loop mirror, a second loop mirror, a first waveguide optically coupled to the first loop mirror and the second loop mirror, a second waveguide optically coupled to the first loop mirror and the second loop mirror, a first access waveguide optically coupled to the first waveguide, a second access waveguide optically coupled to the second waveguide, and an output section, wherein the first loop mirror includes a first loop waveguide and a first multiplexer/demultiplexer, the second loop mirror includes a second loop waveguide and a second multiplexer/demultiplexer, the output section includes a third loop waveguide, a third multiplexer/demultiplexer, a third waveguide, and a fourth waveguide, the third loop waveguide optically coupled to the second loop waveguide and the third multiplexer/demultiplexer, the third waveguide and the fourth waveguide optically coupled to the third multiplexer/demultiplexer, and the output section.

Abstract: An optical filter includes a ring resonator, an optical waveguide configured to be optically coupled to the ring resonator, and a heater provided at the ring resonator. The ring resonator includes a first curved portion. The optical waveguide includes a second curved portion. The first curved portion and the second curved portion are configured to form a directional coupler. The heater is disposed above the directional coupler.

Abstract: A plasma processing apparatus includes: a plasma processing apparatus includes: a plasma processing chamber; a substrate support; a source RF generator coupled to the plasma processing chamber, and configured to generate a source RF pulsed signal; a first bias RF generator configured to generate a first bias RF pulsed signal; a second bias RF generator configured to generate a second bias RF pulsed signal; a first separation circuit connected between the first bias RF generator and the substrate support, and configured to suppress a coupling of the second bias RF pulsed signal from the second bias RF generator to the first bias RF generator, and a second separation circuit connected between the second bias RF generator and the substrate support, and configured to suppress a coupling of the first bias RF pulsed signal from the first bias RF generator to the second bias RF generator.

Abstract: There is a substrate processing apparatus for processing a substrate, comprising: a power receiver including a power reception coil to which power is transmitted in a non-contact manner from a power transmission coil located outside the substrate processing apparatus, wherein the substrate processing apparatus is configured to supply power to at least one unit or member that uses power from the power receiver.

Abstract: A substrate processing apparatus comprises a power storage part and at least one unit or member that uses a power. Charges stored in the power storage part are supplied, as a power, to the unit or the member.

Abstract: A light detection device includes a light projector, a light receiver, a detector, and a controller. The light projector projects light to a predetermined range. The light receiver has a light receiving region in which light is received. The detector detects light by comparing a light reception result by the light receiver with a predetermined threshold. The controller controls the threshold. The controller shifts in turn a range where light is projected from the light projector. The controller, causes the detector to detect light per a portion of the light receiving region, the portion corresponding to a range with light being projected from the light projector, and sets the threshold based on a light reception result by the light receiver in a different portion of the light receiving region from the portion corresponding to the range with light being projected.

Abstract: A light source device includes a light source unit that emits laser light, a condensing lens, and a transmissive fluorescent body. The condensing lens condenses laser light emitted from the light source unit. The transmissive fluorescent body is provided with, inside thereof, a condensing point of laser light condensed by the condensing lens, and emits fluorescent light from a portion through which laser light passes.

Abstract: A photonic crystal surface-emitting laser includes a light emitting region from which light is emitted in a direction crossing an in-plane direction, and a current blocking region that is adjacent to the light emitting region in the in-plane direction and in which current is less likely to flow than in the light emitting region. The light emitting region and the current blocking region each include a photonic crystal layer. The photonic crystal layer has a first region and second regions periodically arranged in the first region. A refractive index of each of the second regions is different from that of the first region. The light emitting region includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer, the active layer, and the second semiconductor layer are sequentially stacked on top of one another in an emission direction of the light.

Abstract: A filter circuit includes: a first filter provided in a wiring between a conductive member provided inside the plasma processing apparatus and a power supplier which supplies control power or DC power to the conductive member; and a second filter provided in a wiring between the first filter and the power supplier. The first filter includes a first coil connected in series to the wiring and having no core member. The second filter includes a second coil connected in series to the wiring between the first coil and the power supplier and having core members. The second coil includes a conducting wire arranged on a surface of at least one of the core members opposite to a surface of at least one of the core members facing a hollow inner cylinder, the at least one of the core members being arranged annularly around the inner cylinder.

Abstract: A photonic-crystal surface emitting laser includes a first semiconductor layer, a photonic crystal layer having a refractive index higher than a refractive index of the first semiconductor layer and provided on the first semiconductor layer, and an active layer provided opposite to the first semiconductor layer with respect to the photonic crystal layer. The photonic crystal layer has a first region and a plurality of second regions each having a refractive index different from a refractive index of the first region and periodically disposed in the first region in a plane of the photonic crystal layer. The second regions extend from the photonic crystal layer to the first semiconductor layer.