Abstract: There is provided an antenna for inductively coupled plasma excitation. The antenna comprises a plurality of coil assemblies and a conductive plate connected to the plurality of coil assemblies, the conductive plate having a central opening and at least one plate terminal.

Abstract: A semiconductor optical device includes a substrate containing silicon, and a semiconductor element bonded to the substrate, the semiconductor element being formed of a compound semiconductor and having an optical gain. The substrate includes a waveguide and a first region connected to the waveguide in an extension direction of the waveguide. The first region includes a plurality of recesses and a plurality of protrusions. Each of the plurality of recesses is recessed in a thickness direction of the substrate compared to a surface of the substrate to which the semiconductor element is bonded. Each of the plurality of protrusions protrudes in the thickness direction of the substrate from bottom surfaces of the plurality of recesses. The plurality of recesses and the plurality of protrusions are alternately disposed in a direction intersecting with the extension direction of the waveguide. The semiconductor element is bonded to the first region.

Abstract: Provided is a semiconductor light source element or an optical device including a semiconductor optical waveguide of a high-mesa semi-insulated embedded structure having a window structure made of the same material as an overclad layer at a light emission end, and a method for manufacturing thereof, in which an active layer at a portion of the window structure is removed, and then the same layer as the overclad layer is formed.

Abstract: A 1.3 ?m-band wavelength-tunable DBR laser in which a wavelength-tunable amount is extended is disclosed. The wavelength-tunable DBR laser according to an embodiment of the present invention is a wavelength-tunable DBR laser in which an active region having an optical gain and a DBR region including a diffraction grating are integrated monolithically and an oscillation wavelength is changed by injecting a current into the DBR region. At a boundary between a p-side clad layer and a core layer in the DBR region, an electron barrier layer being p-type doped and having a bandgap greater than in the p-side clad layer is further included. At a boundary between an n-side clad layer and the core layer in the DBR region, a hole barrier layer being n-type doped and having a bandgap greater than in the n-side clad layer is further included.

Abstract: A method for manufacturing a monolithically integrated semiconductor optical integrated element comprising a DFB laser, an EA modulator, and a SOA disposed in a light emitting direction, comprising the step of forming a semiconductor wafer on which the elements are two-dimensionally arrayed and aligned the optical axes; cleaving the semiconductor wafer along a plane orthogonal to the light emitting direction to form a semiconductor bar including a plurality of the elements arranged one-dimensionally along a direction orthogonal to the light emitting direction such that the elements adjacent to each other share an identical cleavage end face as a light emission surface; inspecting the semiconductor bar by driving the SOA and the DFB laser through a connection wiring part together; and separating out the semiconductor bar after the inspection to cut the connection wiring part connecting the electrode of the SOA and the DFB laser to isolate from each other.

Abstract: A semiconductor optical device includes a substrate including a waveguide made of silicon and a semiconductor layer joined to the substrate so as to overlap the waveguide and including a diffraction grating formed of a first semiconductor layer and a second semiconductor layer having different refractive indices. The waveguide includes a bent portion and a plurality of straight portions that are connected to each other by the bent portion and that extend straight. The first semiconductor layer and the second semiconductor layer are each made of a compound semiconductor. The second semiconductor layer is embedded in the first semiconductor layer and includes a plurality of portions arranged in a direction in which the plurality of straight portions extend. The diffraction grating is positioned above the plurality of straight portions.

Abstract: An optical transmitter capable of significantly suppressing a fluctuation in frequency response characteristics due to a fabrication error in internal wire length while reducing a subcarrier size of a module of the optical transmitter is provided. The optical transmitter includes: a subcarrier on which an RF wiring board, a modulated laser chip, and a terminating resistor are mounted and which has a ground pad on an upper surface thereof; and a wire for electrically connecting at least the RF wiring board and the modulated laser chip to each other, wherein the RF wiring board and the modulated laser chip are arranged in a width direction of the subcarrier, and a length of the wire in an electric path which starts at the RF wiring board, passes through the terminating resistor, and reaches the ground pad is 0.5 to 1.5 mm or an inductance of the wire is 0.4 to 1.2 nH.

Abstract: A semiconductor optical device in which a light emitting region that emits light and a reflecting region that reflects the light to the light emitting region side are integrated includes a core layer that is provided in the light emitting region, and a waveguide layer that is provided in the reflecting region, that is optically coupled to the core layer, and that has a band gap that is larger than energy of the light. The reflecting region has a first thyristor that overlaps the waveguide layer in a direction that intersects a propagation direction of the light.

Abstract: A plasma processing apparatus includes: a main coil disposed on or above a plasma processing chamber; and a sub-coil assembly disposed radially inside or outside the main coil. The sub-coil assembly includes a first spiral coil and a second spiral coil. Each turn of the first spiral coil and each turn of the second spiral coil are alternately arranged in a vertical direction. A first upper terminal of the first spiral coil is connected to a ground potential via one or more capacitors, and a first lower terminal of the first spiral coil is connected to the ground potential. A second upper terminal of the second spiral coil is connected to the ground potential via one or more capacitors or one or more other capacitors, and a second lower terminal of the second spiral coil is connected to the ground potential.

Abstract: A plasma processing apparatus includes: a source RF generator that generates a source RF pulsed signal of at least three power levels; first and second bias RF generators that generate first and second bias RF pulsed signals of at least two power levels; a synchronization signal generator that generates a synchronization signal; a first matching circuit connected to the source RF generator and an antenna, thereby allowing the source RF pulsed signal to be supplied from the source RF generator to the antenna through the first matching circuit; and a second matching circuit connected to the first and second bias RF generators and a substrate support, thereby allowing the first and second bias RF pulse signals to be supplied from the first and second bias RF generators to the substrate support through the second matching circuit.

Abstract: An estimation apparatus includes: an acquisition section that acquires a measurement result of a measurement unit that measures an object to be an estimation target of a contact sense in a contactless manner; a determination section that makes a determination as to an aspect of the object or a measurement condition of the object on a basis of the measurement result of the measurement unit; a selection section that selects, on a basis of a result of the determination, an estimation scheme to be used for estimation of the contact sense of the object from among a plurality of estimation schemes; and an estimation section that estimates the contact sense of the object using the selected estimation scheme.

Abstract: A plasma processing apparatus includes a chamber; a dielectric window, a first antenna for generating plasma within the chamber, and a first power supply for supplying RF power to the first antenna. Power is fed to a first line constituting the first antenna from the first power supply and the vicinity of the midpoint is grounded so that the first antenna resonates at a wavelength that is ½ of a wavelength of the RF power. The first antenna includes a first portion close to a first end with reference to a first position separated from the first end by a first distance toward a central portion of the first line, a second portion close to a second end with reference to a second position separated from the second end by a second distance toward the central portion, and a first intermediate portion between the first and second portions.

Abstract: Provided is a laser emitting circuit that causes a LD array including a plurality of LDs to simultaneously or sequentially emit pulsed laser light. The laser emitting circuit includes the plurality of laser diodes of which anodes are electrically connected to one another, switching elements that are electrically connected to cathodes of the respective laser diodes and control current flowing through each of the laser diodes, drive circuits that control the switching elements, and a series circuit in which a capacitor and a resistor are electrically connected in series. The series circuit has one end electrically connected to anode of the laser diodes and another end grounded.

Abstract: A method for producing a semiconductor optical device includes the steps of bonding a semiconductor chip to an SOI substrate having a waveguide, the semiconductor chip having an optical gain and including a first cladding layer, a core layer, and a second cladding layer that contain III-V group compound semiconductors and are sequentially stacked in this order, forming a covered portion with a first insulating layer on the second cladding layer, etching partway in the thickness direction the second cladding layer exposed from the first insulating film, forming a second insulating film covering from the covered portion to a part of a remaining portion of the second cladding layer, and forming a first tapered portion that is disposed on the waveguide and tapered along the extending direction of the waveguide by etching the core layer and the second cladding layer exposed from the second insulating film.

Abstract: There is provided an optical transmitter having high optical feedback resistance even at the time of high-output operation and capable of suppressing deterioration of optical waveform quality and transmission characteristics. The optical transmitter includes a DBR laser, an EA modulator, a passive optical waveguide, and an SOA that are monolithically integrated on a same substrate, the DBR laser including an active region where current is injected and optical gain is obtained, and two DBR regions that are formed on opposite ends of the active region, the EA modulator optically modulating laser light from the DBR laser, the passive optical waveguide being for guiding modulated light from the EA modulator, the SOA optically amplifying the modulated light from the passive optical waveguide.

Abstract: A semiconductor device includes an electrode which is arranged on an organic material with an insulation film interposed therebetween and which does not easily peel away from the organic material along with the insulation film. An insulation film in a region including pad portions of a phase shift electrode and a modulation electrode has openings at the centers of the pad portions of the phase shift electrode and the modulation electrode, the edge portions of which are formed on the phase shift electrode and the modulation electrode. In this way, the adjoining edges of the phase shift electrode and modulation electrode and the insulation film are all covered by the insulation film so as not to be exposed to the atmosphere.

Abstract: A semiconductor optical device includes an SOI substrate having a waveguide of silicon, and at least one gain region of a group III-V compound semiconductor having an optical gain bonded to the SOI substrate. The waveguide has a bent portion and multiple linear portions extending linearly and connected to each other through the bent portion. The gain region is disposed on each of the multiple linear portions.

Abstract: A method for manufacturing a monolithically integrated semiconductor optical integrated element comprising a DFB laser, an EA modulator, and a SOA disposed in a light emitting direction, comprising the step of forming a semiconductor wafer on which the elements are two-dimensionally arrayed and aligned the optical axes; cleaving the semiconductor wafer along a plane orthogonal to the light emitting direction to form a semiconductor bar including a plurality of the elements arranged one-dimensionally along a direction orthogonal to the light emitting direction such that the elements adjacent to each other share an identical cleavage end face as a light emission surface; inspecting the semiconductor bar by driving the SOA and the DFB laser through a connection wiring part together; and separating out the semiconductor bar after the inspection to cut the connection wiring part connecting the electrode of the SOA and the DFB laser to isolate from each other.

Abstract: A light detection device includes a light projector, a light receiver, a detector, and a controller. The light projector projects light to a predetermined range. The light receiver has a light receiving region in which light is received. The detector detects light by comparing a light reception result by the light receiver with a predetermined threshold. The controller controls the threshold. The controller shifts in turn a range where light is projected from the light projector. The controller, causes the detector to detect light per a portion of the light receiving region, the portion corresponding to a range with light being projected from the light projector, and sets the threshold based on a light reception result by the light receiver in a different portion of the light receiving region from the portion corresponding to the range with light being projected.

Abstract: There is provided an information processing apparatus and an information processing method that can provide more useful information for an action plan of an autonomous mobile body, the information processing apparatus including an action recommendation unit configured to present a recommended action recommended to an autonomous mobile body, to the autonomous mobile body that performs an action plan based on situation estimation. The action recommendation unit determines the recommended action on the basis of an action history collected from a plurality of the autonomous mobile bodies, and on the basis of a situation summary received from a target autonomous mobile body that is a target of recommendation. The information processing method includes presenting, by a processor, a recommended action recommended to an autonomous mobile body, to the autonomous mobile body that performs an action plan based on situation estimation.