Abstract: A method of welding a first member and a second member together includes preparing the first member and the second member, bringing the first member and the second member into contact to form a space between the first member and the second member, and bringing a welding horn into contact with the first member or the second member. The method of welding further includes performing a vibration process to vibrate the welding horn to weld the first member and the second member together by frictional heat, and performing a fluid-flow process to make fluid flow through the space. The fluid-flow process is performed during the vibration process.

Abstract: A face-up-type Group III nitride semiconductor light-emitting device includes a growth substrate, an n-type layer, a light-emitting layer, a p-type layer, an n-electrode including a bonding portion and a wiring portion, a p-electrode including a bonding portion and a wiring portion, and a first insulating film. The n-type layer, the light-emitting layer, and the p-type layer are sequentially stacked on the growth substrate, and the n-electrode and the p-electrode are formed on the first insulating film. A groove having a depth extending from a top surface of the p-type layer to the n-type layer is formed in at least one region selected from a region directly below the wiring portion of the n-electrode and a region directly below the wiring portion of the p-electrode. The wiring portion, which is formed in the groove, is located at a level lower than that of the light-emitting layer.

Abstract: A liquid ejection head includes a recording element substrate that ejects liquid; an electric wiring substrate electrically connected with the recording element substrate; a support member having a recess that houses the recording element substrate; and a sealant that seals an electric connection part between both the substrates. The support member has a projection-shaped adhesive application surface at a bottom surface of the recess, on which an adhesive for bonding the recording element substrate is applied; and a projection projecting from an inner side surface of the recess near the electric connection part toward the adhesive application surface, which has a first region that is covered with the recording element substrate, and a second region extending from the first region to the projection having a wall formed of the adhesive and closing a gap between the projection and a side surface of the recording element substrate facing the projection.

Abstract: A liquid ejection head includes a recording element substrate that ejects liquid; an electric wiring substrate electrically connected with the recording element substrate; a support member having a recess that houses the recording element substrate; and a sealant that seals an electric connection part between both the substrates. The support member has a projection-shaped adhesive application surface at a bottom surface of the recess, on which an adhesive for bonding the recording element substrate is applied; and a projection projecting from an inner side surface of the recess near the electric connection part toward the adhesive application surface, which has a first region that is covered with the recording element substrate, and a second region extending from the first region to the projection having a wall formed of the adhesive and closing a gap between the projection and a side surface of the recording element substrate facing the projection.

Abstract: A face-up-type Group III nitride semiconductor light-emitting device includes a growth substrate, an n-type layer, a light-emitting layer, a p-type layer, an n-electrode including a bonding portion and a wiring portion, a p-electrode including a bonding portion and a wiring portion, and a first insulating film. The n-type layer, the light-emitting layer, and the p-type layer are sequentially stacked on the growth substrate, and the n-electrode and the p-electrode are formed on the first insulating film. A groove having a depth extending from a top surface of the p-type layer to the n-type layer is formed in at least one region selected from a region directly below the wiring portion of the n-electrode and a region directly below the wiring portion of the p-electrode. The wiring portion, which is formed in the groove, is located at a level lower than that of the light-emitting layer.

Abstract: To improve light emission efficiency and reliability. A transparent conductive film 10 is formed on an entire top surface of a second semiconductor layer 108, and a photo-resist is applied thereon. When removing the photo-resist on the upper surface corresponding to an electrode forming part 16 of a first semiconductor layer 104, the photo-resist is removed to be gradually thinned at a boundary of a portion to be removed. The transparent conductive film is wet etched using the remaining photo-resist as a mask to expose a part of the second semiconductor layer. Dry etching is performed using the remaining photo-resist and the transparent conductive film as a mask to expose the electrode forming part of the first semiconductor layer. A portion of the transparent conductive film exposed in the dry etching using the remaining photo-resist as a mask is wet etched. The remaining photo-resist is eliminated.

Abstract: A Group III nitride semiconductor light-emitting device, includes a groove having a depth extending from the top surface of a p-type layer to an n-type layer is provided in a region overlapping (in plan view) with the wiring portion of an n-electrode or the wiring portion of a p-electrode. An insulating film is provided so as to continuously cover the side surfaces and bottom surface of the groove, the p-type layer, and an ITO electrode. The insulating film incorporates therein reflective films in regions directly below the n-electrode and the p-electrode (on the side of a sapphire substrate). The reflective films in regions directly below the wiring portion of the n-electrode and the wiring portion of the p-electrode are located at a level lower than that of a light-emitting layer. The n-electrode and the p-electrode are covered with an additional insulating film.

Abstract: A liquid ejection head includes a recording element substrate including an ejection port that ejects liquid, and an energy generating element that generates energy used to eject liquid, an electric wiring substrate including wiring for transmitting electric power for driving the energy generating element, and an opening that exposes the recording element substrate, a plurality of connecting portions that electrically connect the recording element substrate and the electric wiring substrate, a recess formed between the recording element substrate and the electric wiring substrate, and at least one groove formed in the bottom of the recess corresponding to at least one part where the connecting portions are formed. The at least one groove includes a first portion formed along an arranging direction of the plurality of connecting portions, and a second portion formed in a direction intersecting with the arranging direction.

Abstract: An event setting section sets calendars or accounts based on operation contents from an operation input receiving unit, and stores a list of the set calendars or accounts in a schedule database. In addition, the event setting section sets events in a calendar based on operation contents from the operation input receiving unit, and stores a list of the set events in the schedule database. An image correlation section stores image data supplied from an image input unit in an image database, and correlates (shares) the image data with the event list stored in the schedule database based on photographing information (photographing time, camera ID, and the like) accompanied by the image data.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high-intensity light output in a specific direction and improved light extraction performance. The Group III nitride semiconductor light-emitting device comprises a sapphire substrate, and a layered structure having a light-emitting layer provided on the sapphire substrate and formed of a Group III nitride semiconductor. On the surface on the layered structure side of the sapphire substrate, a two-dimensional periodic structure of mesas is formed with a period which generates a light intensity interference pattern for the light emitted from the light-emitting layer. The light reflected by or transmitted through the two-dimensional periodic structure has an interference pattern.

Abstract: A printing apparatus having a displaying portion, a display controlling unit, and a print controlling unit.

Abstract: A liquid ejection head includes a recording element substrate including an ejection port that ejects liquid, and an energy generating element that generates energy used to eject liquid, an electric wiring substrate including wiring for transmitting electric power for driving the energy generating element, and an opening that exposes the recording element substrate, a plurality of connecting portions that electrically connect the recording element substrate and the electric wiring substrate, a recess formed between the recording element substrate and the electric wiring substrate, and at least one groove formed in the bottom of the recess corresponding to at least one part where the connecting portions are formed. The at least one groove includes a first portion formed along an arranging direction of the plurality of connecting portions, and a second portion formed in a direction intersecting with the arranging direction.

Abstract: To improve light emission efficiency and reliability. A transparent conductive film 10 is formed on an entire top surface of a second semiconductor layer 108, and a photo-resist is applied thereon. When removing the photo-resist on the upper surface corresponding to an electrode forming part 16 of a first semiconductor layer 104, the photo-resist is removed to be gradually thinned at a boundary of a portion to be removed. The transparent conductive film is wet etched using the remaining photo-resist as a mask to expose a part of the second semiconductor layer. Dry etching is performed using the remaining photo-resist and the transparent conductive film as a mask to expose the electrode forming part of the first semiconductor layer. A portion of the transparent conductive film exposed in the dry etching using the remaining photo-resist as a mask is wet etched. The remaining photo-resist is eliminated.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high-intensity light output in a specific direction and improved light extraction performance. The Group III nitride semiconductor light-emitting device comprises a sapphire substrate, and a layered structure having a light-emitting layer provided on the sapphire substrate and formed of a Group III nitride semiconductor. On the surface on the layered structure side of the sapphire substrate, a two-dimensional periodic structure of mesas is formed with a period which generates a light intensity interference pattern for the light emitted from the light-emitting layer. The light reflected by or transmitted through the two-dimensional periodic structure has an interference pattern.

Abstract: An event setting section sets calendars or accounts based on operation contents from an operation input receiving unit, and stores a list of the set calendars or accounts in a schedule database. In addition, the event setting section sets events in a calendar based on operation contents from the operation input receiving unit, and stores a list of the set events in the schedule database. An image correlation section stores image data supplied from an image input unit in an image database, and correlates (shares) the image data with the event list stored in the schedule database based on photographing information (photographing time, camera ID, and the like) accompanied by the image data.

Abstract: A Group III nitride semiconductor light-emitting device, includes a groove having a depth extending from the top surface of a p-type layer to an n-type layer is provided in a region overlapping (in plan view) with the wiring portion of an n-electrode or the wiring portion of a p-electrode. An insulating film is provided so as to continuously cover the side surfaces and bottom surface of the groove, the p-type layer, and an ITO electrode. The insulating film incorporates therein reflective films in regions directly below the n-electrode and the p-electrode (on the side of a sapphire substrate). The reflective films in regions directly below the wiring portion of the n-electrode and the wiring portion of the p-electrode are located at a level lower than that of a light-emitting layer. The n-electrode and the p-electrode are covered with an additional insulating film.

Abstract: A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer, a light-emitting layer and a second semiconductor layer, an insulation layer provided on the semiconductor laminated structure, a first wiring including a first vertical conducting portion and a first planar conducting portion and being electrically connected to the first semiconductor layer, the first vertical conducting portion extending inside the insulation layer, the light-emitting layer and the second semiconductor layer in a vertical direction and the first planar conducting portion extending inside the insulation layer in a planar direction, and a second wiring including a second vertical conducting portion and a second planar conducting portion and being electrically connected to the second semiconductor layer, the second vertical conducting portion extending inside the insulation layer in a vertical direction and the second planar conducting portion extending inside the insulation layer in a

Abstract: In a flip chip type light-emitting element of the present invention, an n type contact electrode 14 is formed on an n layer 11 exposed in a comb-tooth shape, a light transmission electrode 15 made of an ITO is formed over the entire surface of an upper surface of a p layer 13 and twenty pad electrodes 16 are formed at prescribed intervals on the light transmission electrode 15. The plane form of the pad electrode 16 has four branches 16b protruding in the form of a cross from a circular central part 16a and the adjacent pad electrodes 16 connected to each other by the branches 16b.

Abstract: A light emitting element includes a first electrode, a second electrode formed on a same side as the first electrode and including an area less than the first electrode, a first bump formed on the first electrode, and a second bump formed on the second electrode and including a level at a top thereof higher than that of the first bump. A flip-chip type light emitting element includes a spreading electrode, the spreading electrode including an extended part, and plural intermediate electrodes formed on the spreading electrode and arranged in a longitudinal direction of the extended part and centrally in a width direction of the extended part. The intermediate electrodes are disposed such that a distance of half a pitch thereof in the longitudinal direction is equal to or shorter than a distance from one of the intermediate electrodes to an edge of the extended part.

Abstract: A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer, a light-emitting layer and a second semiconductor layer, an insulation layer provided on the semiconductor laminated structure, a first wiring including a first vertical conducting portion and a first planar conducting portion and being electrically connected to the first semiconductor layer, the first vertical conducting portion extending inside the insulation layer, the light-emitting layer and the second semiconductor layer in a vertical direction and the first planar conducting portion extending inside the insulation layer in a planar direction, and a second wiring including a second vertical conducting portion and a second planar conducting portion and being electrically connected to the second semiconductor layer, the second vertical conducting portion extending inside the insulation layer in a vertical direction and the second planar conducting portion extending inside the insulation layer in a