Patents by Inventor Naoki Ohta

Naoki Ohta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11480477
    Abstract: A heat utilizing device is provided in which the thermal resistance of the wiring layer is increased while an increase in electric resistance of the wiring layer is limited. Heat utilizing device has thermistor whose electric resistance changes depending on temperature; and wiring layer that is connected to thermistor. A mean free path of phonons in wiring layer is smaller than a mean free path of phonons in an infinite medium that consists of a material of wiring layer.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: October 25, 2022
    Assignee: TDK Corporation
    Inventors: Shinji Hara, Naoki Ohta, Susumu Aoki, Eiji Komura, Akimasa Kaizu
  • Patent number: 11474168
    Abstract: A magnetic sensor device having a spin-valve-type magnetoresistive effect element and capable of stably applying a bias magnetic field on the free layer of the magnetoresistive effect element includes a spin-valve-type magnetoresistive effect element, a substrate on which the magnetoresistive effect element is positioned, a power source that supplies a substantially constant electric current applied on the magnetoresistive effect element, and a magnetic field generator that is connected to the electric current path of the electric current applied on the magnetoresistive effect element in series. The magnetic field generator is provided to be capable of applying a bias magnetic field on at least a portion of the magnetoresistive effect element. The magnetic field generator is close to a portion of the magnetoresistive effect element and is positioned at a different level from the substrate.
    Type: Grant
    Filed: August 25, 2021
    Date of Patent: October 18, 2022
    Assignee: TDK Corporation
    Inventors: Naoki Ohta, Yongfu Cai
  • Patent number: 11450803
    Abstract: A resistance change element includes a first lead electrode, a resistance change layer provided on the first lead electrode, and a second lead electrode provided on the resistance change layer. The surface of the first lead electrode on the resistance change layer side includes a first region in which the resistance change layer is provided, and a second region that is a region other than the first region. In the second region, a second material having a work function that is larger than that of a first material configuring the first lead electrode is unevenly distributed.
    Type: Grant
    Filed: January 7, 2020
    Date of Patent: September 20, 2022
    Assignee: TDK Corporation
    Inventor: Naoki Ohta
  • Publication number: 20220274952
    Abstract: An object of the present invention is to provide a cyclic azine compound exhibiting both excellent driving voltage characteristics and excellent current efficiency characteristics. The desired cyclic azine compound has a specific structure represented by formula (1).
    Type: Application
    Filed: July 22, 2020
    Publication date: September 1, 2022
    Applicants: TOSOH CORPORATION, SAGAMI CHEMICAL RESEARCH INSTITUTE
    Inventors: Naoki UCHIDA, Hidenori AIHARA, Takuya YAMAGATA, Naoki HAYAKAWA, Natsumi NAKAJIMA, Kazuki HATTORI, Fuminari UEHARA, Yohei ONO, Masaya HIRANO, Yuta MORINAKA, Keisuke NOMURA, Eriko OHTA, Tomohiro SHONO, Kana OIKE, Kazushi HAYASHI, Keiya AOYAGI, Kosuke SATO, Toshiki NISHIURA
  • Publication number: 20220262548
    Abstract: A thermistor element includes: a thermistor film; a pair of first electrodes in contact with one surface of the thermistor film; an insulation film opposite to a contact side of the pair of first electrodes, the contact side on which the pair of first electrodes is in contact with the thermistor film; and at least one opening portion located in a region which overlaps each of the first electrodes when viewed in a plan view and passing through the insulation film. Each first electrode has a first portion located where each of the first electrodes and the opening portion overlap when viewed in a plan view and a second portion outside of where each of the first electrodes and the opening portion overlap when viewed in a plan view and is over the first portion and second portion to be in contact with the one surface of the thermistor film.
    Type: Application
    Filed: February 11, 2022
    Publication date: August 18, 2022
    Applicant: TDK CORPORATION
    Inventors: Susumu AOKI, Shinji HARA, Naoki OHTA, Maiko SHIROKAWA
  • Publication number: 20220260938
    Abstract: An image forming apparatus to form an image on a recording material includes a photosensitive member, an exposure device to form a latent image on the photosensitive member, a tubular body defining a space in which at least a part of the exposure device is contained, and a support portion that supports the exposure device and is provided along a rotation axis direction of the photosensitive member in the space of the tubular body. The image forming apparatus further includes, in the rotation axis direction, a first side plate fixed to one end portion of the tubular body, and a second side plate fixed to another end portion of the tubular body. One support portion end portion in the rotation axis direction is fixed to the first side plate, and another support portion end portion in the rotation axis direction is fixed to the second side plate.
    Type: Application
    Filed: May 5, 2022
    Publication date: August 18, 2022
    Inventors: Shoji Yamamoto, Akira Yoshimura, Shogo Nagamine, Naoki Matsushita, Yoshihiko Tanaka, Hisanori Kobayashi, Takatoshi Tanaka, Mitsuhiro Ohta, Hiroki Katayama, Akitoshi Toyota
  • Publication number: 20220238266
    Abstract: A soft magnetic alloy is represented by a composition formula (Fe1-xAx)aSibBcCudMe, wherein A is at least one of Ni and Co, M is one or more selected from the group consisting of Nb, Mo, V, Zr, Hf, and W, and 82.4?a?86, 0.2?b?2.4, 12.5?c?15.0, 0.05?d?0.8, 0.4?e?1.0, and 0?x?0.1 in at %, and has a structure in which crystal grains having a grain size of 60 nm or less are present in an amorphous phase.
    Type: Application
    Filed: January 19, 2022
    Publication date: July 28, 2022
    Inventors: Yuichi Ogawa, Naoki Itoh, Takahiro Shiratake, Motoki Ohta
  • Patent number: 11385457
    Abstract: In an optical scanning device, an outer wall closest to a circumscribed circle of a rotating polygon mirror has a space in a position facing to a position of a reflection surface of the rotating polygon mirror in an axial direction of a rotating shaft. A part of a cover is provided in a position farther from the circumscribed circle than the outer wall so as to close the space, when the optical scanning device is viewed in a direction perpendicular to the axial direction of the rotating shaft.
    Type: Grant
    Filed: September 9, 2020
    Date of Patent: July 12, 2022
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Yoshihiko Tanaka, Hisanori Kobayashi, Naoki Matsushita, Takatoshi Tanaka, Mitsuhiro Ohta, Hiroki Katayama
  • Patent number: 11383413
    Abstract: A manufacturing method of a polygonal mirror using a metal mold including a first mold, a second mold, a third mold, and a fourth mold includes a step of forming the molded member by providing the third mold and the fourth mold between the first mold and the second mold in a state in which the third mold and the fourth mold are in contact with each other and then by injecting a resin material into the metal mold, and a step of separating the third mold from the first crossing surface of the molded member in a direction crossing the first crossing surface.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: July 12, 2022
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Fumihiko Yamaya, Hiroki Katayama, Yoshihiko Tanaka, Takatoshi Tanaka, Mitsuhiro Ohta, Atsushi Takata, Naoki Matsushita
  • Publication number: 20220181050
    Abstract: A thermistor element includes: a thermistor film; a first electrode provided in contact with one surface of the thermistor film; and a pair of second electrodes provided in contact with an other surface of the thermistor film, wherein the thermistor film is provided to cover a periphery of the first electrode.
    Type: Application
    Filed: December 1, 2021
    Publication date: June 9, 2022
    Applicant: TDK CORPORATION
    Inventors: Susumu AOKI, Shinji HARA, Naoki OHTA, Maiko SHIROKAWA, Eiji KOMURA
  • Publication number: 20220178759
    Abstract: A thermistor element includes a thermistor film, a first electrode provided in contact with one surface of the thermistor film, and a pair of second electrodes provided in contact with the other surface of the thermistor film, wherein the thermistor film includes an oxide having a spinel crystal structure and having a [111] preferred orientation in a film thickness direction.
    Type: Application
    Filed: December 1, 2021
    Publication date: June 9, 2022
    Applicant: TDK CORPORATION
    Inventors: Maiko SHIROKAWA, Shinji HARA, Naoki OHTA, Susumu AOKI, Eiji KOMURA
  • Publication number: 20220178758
    Abstract: An electromagnetic wave sensor includes a substrate having transmittance of electromagnetic waves having a specific wavelength, an insulator layer provided on one surface side of the substrate, a thermistor film disposed to have a space between the thermistor film and one surface of the substrate, and a wiring part provided inside or on a surface of the insulator layer and electrically connected to the thermistor film, wherein a transmittance of the electromagnetic waves at a portion facing the thermistor film is relatively higher than a transmittance of the electromagnetic waves at a portion where the wiring part is provided in a layer in which the insulator layer is provided.
    Type: Application
    Filed: December 1, 2021
    Publication date: June 9, 2022
    Applicant: TDK CORPORATION
    Inventors: Shinji HARA, Naoki OHTA, Susumu AOKI, Eiji KOMURA, Maiko SHIROKAWA
  • Publication number: 20220128637
    Abstract: A magnetic sensor comprising a resin layer having a first surface and a second surface, which is opposite to the first surface and a magnetoresistive effect unit that detects a magnetic field in a predetermined direction, wherein the magnetoresistive effect unit includes at least a first magnetoresistive effect unit that detects a magnetic field in a first direction, the first direction is a direction orthogonal to the first surface of the resin layer, an inclined surface that is inclined at a predetermined angle with respect to the first surface is formed in the first surface of the resin layer, and the first magnetoresistive effect unit is formed in the inclined surface.
    Type: Application
    Filed: October 11, 2021
    Publication date: April 28, 2022
    Inventors: Naoki OHTA, Hiroshi YAMAZAKI, Satoshi MIURA, Kenkichi ANAGAWA, Yosuke KOMASAKI
  • Patent number: 11243118
    Abstract: An electromagnetic wave sensor that limits the influence on bolometer membranes that is caused by heat from a local heat source is provided. Electromagnetic wave sensor has first substrate, second substrate that faces first substrate so as to form inner space between first substrate and second substrate, wherein second substrate transmits infrared rays; a plurality of bolometer membranes that is provided in inner space and that is supported by second substrate; local heat source that is formed in first substrate; first electric connection member that connects first substrate to second substrate; and lead that extends on or in second substrate and that connects first electric connection member to bolometer membrane.
    Type: Grant
    Filed: March 7, 2018
    Date of Patent: February 8, 2022
    Assignee: TDK Corporation
    Inventors: Naoki Ohta, Shinji Hara, Susumu Aoki, Eiji Komura, Akimasa Kaizu
  • Publication number: 20210382124
    Abstract: A magnetic sensor device having a spin-valve-type magnetoresistive effect element and capable of stably applying a bias magnetic field on the free layer of the magnetoresistive effect element includes a spin-valve-type magnetoresistive effect element, a substrate on which the magnetoresistive effect element is positioned, a power source that supplies a substantially constant electric current applied on the magnetoresistive effect element, and a magnetic field generator that is connected to the electric current path of the electric current applied on the magnetoresistive effect element in series. The magnetic field generator is provided to be capable of applying a bias magnetic field on at least a portion of the magnetoresistive effect element. The magnetic field generator is close to a portion of the magnetoresistive effect element and is positioned at a different level from the substrate.
    Type: Application
    Filed: August 25, 2021
    Publication date: December 9, 2021
    Inventors: Naoki OHTA, Yongfu CAI
  • Patent number: 11189551
    Abstract: A semiconductor device according to an embodiment of the disclosure includes a base, a semiconductor element, a first conductor, and a second conductor. The base has an outer edge including a first part, a second part, and a third part. The first part and the second part are substantially parallel to each other. The third part extends in a direction that intersects both of the first part and the second part. The semiconductor element is covered with the base. The first conductor is coupled to the semiconductor element, and protrudes to an outside of the base from the first part of the outer edge. The second conductor is coupled to the semiconductor element, and protrudes to the outside of the base from the third part of the outer edge.
    Type: Grant
    Filed: November 8, 2018
    Date of Patent: November 30, 2021
    Assignee: TDK CORPORATION
    Inventors: Naoki Ohta, Keita Miyachi
  • Publication number: 20210318396
    Abstract: A magnetic sensor includes a base material, a plurality of magnets provided at predetermined spacing on the base material, and a plurality of magnetic detection parts respectively provided close to the plurality of magnets. Each of the plurality of magnetic detection parts outputs a signal in accordance with change in the magnetic field accompanying deformation of the base material.
    Type: Application
    Filed: June 23, 2021
    Publication date: October 14, 2021
    Inventors: Naoki OHTA, Kazuya WATANABE
  • Patent number: 11131727
    Abstract: A magnetic sensor device having a spin-valve-type magnetoresistive effect element and capable of stably applying a bias magnetic field on the free layer of the magnetoresistive effect element includes a spin-valve-type magnetoresistive effect element, a substrate on which the magnetoresistive effect element is positioned, a power source that supplies a substantially constant electric current applied on the magnetoresistive effect element, and a magnetic field generator that is connected to the electric current path of the electric current applied on the magnetoresistive effect element in series. The magnetic field generator is provided to be capable of applying a bias magnetic field on at least a portion of the magnetoresistive effect element. The magnetic field generator is close to a portion of the magnetoresistive effect element and is positioned at a different level from the substrate.
    Type: Grant
    Filed: September 20, 2019
    Date of Patent: September 28, 2021
    Assignee: TDK Corporation
    Inventors: Naoki Ohta, Yongfu Cai
  • Publication number: 20210288557
    Abstract: A rotation detection apparatus includes a magnetic field generation source, a spin valve element, and a calculator. The magnetic field generation source is rotatable while generating a magnetic field, and has a temperature coefficient of residual magnetic flux density having an absolute value of 0.1%/° C. or less. The spin valve element includes a magnetic layer configured to generate a movement of a magnetic domain wall in accordance with a change in direction of the magnetic field associated with a rotation of the magnetic field generation source. The calculator is configured to detect a change in resistance of the spin valve element caused by the movement of the magnetic domain wall and to calculate the number of rotations or a rotation angle of the magnetic field generation source.
    Type: Application
    Filed: December 9, 2020
    Publication date: September 16, 2021
    Applicant: TDK CORPORATION
    Inventors: Yosuke KOMASAKI, Naoki OHTA
  • Patent number: 11073578
    Abstract: A magnetic sensor includes a base material, a plurality of magnets provided at predetermined spacing on the base material, and a plurality of magnetic detection parts respectively provided close to the plurality of magnets. Each of the plurality of magnetic detection parts outputs a signal in accordance with change in the magnetic field accompanying deformation of the base material.
    Type: Grant
    Filed: January 17, 2020
    Date of Patent: July 27, 2021
    Assignee: TDK Corporation
    Inventors: Naoki Ohta, Kazuya Watanabe