Abstract: A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body includes silicon or a silicon alloy, wherein the average grain size of the crystal grains forming the polycrystalline body is 1 ?m or less, and wherein nanoparticles including one or more of a carbide of silicon, a nitride of silicon, and an oxide of silicon are present at a grain boundary of the grains.

Abstract: A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises silicon or a silicon alloy, and the average grain size of the crystal grains constituting the polycrystalline body is 1 ?m or less, and the electrical conductivity is 10,000 S/m or higher.

Abstract: A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises magnesium silicide or an alloy containing magnesium silicide, and the average grain size of the crystal grains constituting the polycrystalline body is 1 ?m or less, and the electrical conductivity is 10,000 S/m or higher.

Abstract: A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises magnesium silicide or an alloy containing magnesium silicide, and the average grain size of the crystal grains constituting the polycrystalline body is 1 ?m or less, and the electrical conductivity is 10,000 S/m or higher.

Abstract: A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body includes silicon or a silicon alloy, wherein the average grain size of the crystal grains forming the polycrystalline body is 1 ?m or less, and wherein nanoparticles including one or more of a carbide of silicon, a nitride of silicon, and an oxide of silicon are present at a grain boundary of the grains.

Abstract: A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises silicon or a silicon alloy, and the average grain size of the crystal grains constituting the polycrystalline body is 1 ?m or less, and the electrical conductivity is 10,000 S/m or higher.

Abstract: A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises magnesium silicide or an alloy containing magnesium silicide, and the average grain size of the crystal grains constituting the polycrystalline body is 1 ?m or less, and the electrical conductivity is 10,000 S/m or higher.

Abstract: The present invention provides A direct-type backlight having: a resin sealing member including at least one resin layer, which has a light reflecting section formed on the outermost surface of the resin sealing member; an optical semiconductor element sealed by the resin sealing member; and plural circular light scattering grooves formed concentrically on at least one surface of the resin layer, wherein an area of a circle in the center and an area among the respective concentric circles are substantially the same.

Abstract: The invention provides a sheet for optical-semiconductor element encapsulation, which has a multilayer structure including at least two resin layers. The at least two resin layers include: (A) an outermost resin layer (layer A) that is to be brought into contact with one or more optical semiconductor elements; and (B) a resin layer (layer B) disposed on the layer A and having a lower refractive index than that of the layer A. Also disclosed is a process for producing an optical semiconductor device using the sheet.

Abstract: The invention provides a process for producing a light-emitting semiconductor device, which comprises: (1) forming a polycarbodiimide-containing layer on a light takeout side of a light-emitting semiconductor element; and (2) forming irregularities on the surface of the polycarbodiimide-containing layer.

Abstract: The present invention provides a sheet for optical-semiconductor-element encapsulation, which comprises: an outermost resin layer A that is to be brought into contact with one or more optical semiconductor elements; a light-diffusing layer formed on the layer A and containing light-diffusing particles; and a resin layer B formed on the light-diffusing layer and having a lower refractive index than that of the layer A. Also disclosed is a process for producing an optical semiconductor device using the sheet.

Abstract: A polycarbodiimide copolymer which comprises at least one structural unit selected from rubber residues represented by the following formulae (1) and (2) in a number “m”: and a structural unit represented by the following formula (3) in a number “n”: and which comprises on both termini a terminal structural unit derived from a monoisocyanate, wherein m is an integer of 2 or more, n is an integer of 1 or more, m+n is from 3 to 1,500 and m/(m+n) is from 1/1,500 to ?. The polycarbodiimide is capable of keeping the inherent heat resistance and also showing excellent flexibility. Films and molding materials having high heat resistance and flexibility can be obtained.

Abstract: An adhesive film for underfill excellent in relaxation effect of the stress generated in the above semiconductor element and the wiring circuit board and in the connecting electrode parts and also excellent in reliability of electrical connection between the semiconductor element and the wiring circuit board.

Abstract: The present invention provides a resin for encapsulating an optical-semiconductor element, comprising a polycarbodiimide represented by the following general formula (1): wherein R represents a diisocyanate residue, provided that at least one of the n pieces of the R groups is a diisocyanate residue having the framework represented by the following structural formula (2); R1 represents a monoisocyanate residue; and n is an integer of 1 to 100.

Abstract: A microlens array having a resin layer forming convex lenses, wherein the resin layer comprises a cured product of a polycarbodiimide resin represented by formula: wherein R represents a diisocyanate residue; R1 represents a monoisocyanate residue; and n represents an integer of 1 to 100.

Abstract: The present invention provides A direct-type backlight having: a resin sealing member including at least one resin layer, which has a light reflecting section formed on the outermost surface of the resin sealing member; an optical semiconductor element sealed by the resin sealing member; and plural circular light scattering grooves formed concentrically on at least one surface of the resin layer, wherein an area of a circle in the center and an area among the respective concentric circles are substantially the same.

Abstract: The invention provides a sheet for optical-semiconductor element encapsulation, which has a multilayer structure comprising at least two resin layers, the resin layers comprising: (A) an outermost resin layer that is to be brought into contact with one or more optical semiconductor elements; and (B) a resin layer disposed on the layer A and having a lower refractive index than that of the layer A. Also disclosed is a process for producing an optical semiconductor device using the sheet.

Abstract: The invention provides a process for producing a light-emitting semiconductor device, which comprises: (1) forming a polycarbodiimide-containing layer on a light takeout side of a light-emitting semiconductor element; and (2) forming irregularities on the surface of the polycarbodiimide-containing layer.

Abstract: The invention provides a process for producing an optical semiconductor device, which comprises: (1) forming a resin layer on one or more optical semiconductor elements each mounted on a conductor; and (2) press-molding the resin layer formed in step (1).

Abstract: The invention provides an optical semiconductor device which comprises: an optical semiconductor element; a first resin layer encapsulating the optical semiconductor element and comprising a first resin and light-scattering particles; and one or more resin layers sequentially encapsulating the first resin layer and each comprising a resin having a lower refractive index than the first resin. In an embodiment where the optical semiconductor device has a plurality of resin layers over the first resin layer, the plurality of resin layers are disposed such that the refractive indexes of the constituting resins sequentially decrease toward the outermost resin layer.