Abstract: There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Abstract: A wavelength converting member includes at least a first, second, and third regions, circumferentially on a disc-shaped light-transmissive substrate. The first region includes, from a light incident direction, a first and second phosphor layers. The first phosphor layer includes a first phosphor to absorb at least part of incident light and to emit a first light having a wavelength different from the incident light. The first phosphor layer defines an indentation in a surface on the second phosphor layer side, with a depth a half or more of the thickness of a portion of the first phosphor layer absent of the indentation. The second phosphor layer includes a second phosphor to absorb at least part of the first light emitted by the first phosphor and to emit a second light having a wavelength different from the first light, and is disposed in the indentation of the first phosphor layer.

Abstract: There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Abstract: A wavelength converting member includes at least a first, second, and third regions, circumferentially on a disc-shaped light-transmissive substrate. The first region includes, from a light incident direction, a first and second phosphor layers. The first phosphor layer includes a first phosphor to absorb at least part of incident light and to emit a first light having a wavelength different from the incident light. The first phosphor layer defines an indentation in a surface on the second phosphor layer side, with a depth a half or more of the thickness of a portion of the first phosphor layer absent of the indentation. The second phosphor layer includes a second phosphor to absorb at least part of the first light emitted by the first phosphor and to emit a second light having a wavelength different from the first light, and is disposed in the indentation of the first phosphor layer.

Abstract: A solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.

Abstract: A wavelength converting member includes at least a first, second, and third regions, circumferentially on a disc-shaped light-transmissive substrate. The first region includes, from a light incident direction, a first and second phosphor layers. The first phosphor layer includes a first phosphor to absorb at least part of incident light and to emit a first light having a wavelength different from the incident light. The first phosphor layer defines an indentation in a surface on the second phosphor layer side, with a depth a half or more of the thickness of a portion of the first phosphor layer absent of the indentation. The second phosphor layer includes a second phosphor to absorb at least part of the first light emitted by the first phosphor and to emit a second light having a wavelength different from the first light, and is disposed in the indentation of the first phosphor layer.

Abstract: A method for manufacturing a wavelength conversion member includes: forming a phosphor layer on a base body including phosphor particles and oxide particles affixed to surfaces of the phosphor particles; and forming a cover layer covering the surfaces of the phosphor particles and surfaces of the oxide particles continuously, and having a same oxide material as the oxide particles. A wavelength conversion member includes: a base body, a phosphor layer disposed on the base body and including phosphor particles and oxide particles affixed to surfaces of the phosphor particles; and a cover layer covering the surfaces of the phosphor particles and surfaces of the oxide particles continuously, and including a same oxide material as the oxide particles.

Abstract: There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Abstract: A solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.

Abstract: Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.

Abstract: A solid-state imaging device includes an element forming region on the surface of a substrate, element isolating parts that isolate pixels, each of which is formed with a trench and a buried film, an opto-electric conversion element, and a buried-channel MOS transistor. The buried-channel MOS transistor includes a source region and a drain region, formed in the element forming region, that have a conductivity type opposite to that of the element forming region, a channel region having first and second impurity diffusion regions, which have a conductivity type opposite to that of the element forming region, and a gate electrode. Each first impurity diffusion region is formed between the source region and drain region on a side adjacent to one element isolating part. The second impurity diffusion region is formed across the region between the source region and drain region.

Abstract: A solid-state imaging device includes an element forming region formed on the surface of a substrate, element isolating parts that isolate pixels formed on the substrate, each of which is formed with a trench and a buried film, an opto-electric conversion element, and a buried-channel MOS transistor. The buried-channel MOS transistor includes a source region and a drain region, formed in the element forming region, that have a conductivity type opposite to that of the element forming region, a channel region having first impurity diffusion regions and a second impurity diffusion region, which have a conductivity type opposite to that of the element forming region, and a gate electrode. Each first impurity diffusion region is formed between the source region and drain region on a side adjacent to one element isolating part. The second impurity diffusion region is formed across the region between the source region and drain region.

Abstract: Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.