Abstract: A learned model generating method includes: acquiring learning data; and generating a learned model for estimating a factor of an abnormality of a processing target substrate after processing using a processing fluid by performing machine learning of the learning data. The learning data includes a feature quantity and abnormality factor information. The abnormality factor information represents a factor of an abnormality of a learning target substrate after processing using the processing fluid. The feature quantity includes first feature quantity information representing a feature of a time transition of section data in time series data representing a physical quantity of an object used by a substrate processing device that processes the learning target substrate using the processing fluid. The first feature quantity information is represented using times.

Abstract: An ESD protection circuit has a diode that includes an anode connected to a first power-supply line and a cathode connected to a second power-supply line. A metal-oxide-semiconductor (MOS) transistor is connected in series with the diode. A trigger circuit is configured to output a trigger signal to a gate of the MOS transistor in synchronization with a surge on the first power-supply line. A first resistor and a first capacitor are connected in series between the first power-supply line and the second power-supply line. A well region, in which the source and the drain of the MOS transistor are disposed, is connected to a connection point between the first resistor and the first capacitor. A potential of the connection point varies so that a forward voltage is applied to a p-n junction between the well region and the source of the MOS transistor to correspond with the surge.

Abstract: An ESD protection circuit has a diode that includes an anode connected to a first power-supply line and a cathode connected to a second power-supply line. A metal-oxide-semiconductor (MOS) transistor is connected in series with the diode. A trigger circuit is configured to output a trigger signal to a gate of the MOS transistor in synchronization with a surge on the first power-supply line. A first resistor and a first capacitor are connected in series between the first power-supply line and the second power-supply line. A well region, in which the source and the drain of the MOS transistor are disposed, is connected to a connection point between the first resistor and the first capacitor. A potential of the connection point varies so that a forward voltage is applied to a p-n junction between the well region and the source of the MOS transistor to correspond with the surge.

Abstract: A thermoplastic resin composition for cleaning a molding processing machine, which has good cleaning performance and workability in cleaning an inner side of a molding processing machine of thermoplastic resin composition, such as an extruder and an injection molding and includes (A) an olefin-based resin, (B) a thermoplastic resin which is not compatible with the olefin-based resin of the component (A), (C) a thermoplastic resin for making the olefin-based resin of the component (A) and the thermoplastic resin of the component (B) compatible with each other, (D) an alkaline metal salt of a fatty acid, (E) a nonionic surfactant, and (F) a metal salt of an acidic phosphoric ester.

Abstract: To provide a thermoplastic resin composition for cleaning a molding processing machine, which has good cleaning performance and workability in cleaning an inner side of a molding processing machine of thermoplastic resin, such as an extruder and an injection molding machine. A thermoplastic resin composition for cleaning a molding processing machine, which includes (A) a thermoplastic resin containing a styrene-based resin, (B) an alkaline metal salt of a fatty acid, (C) a nonionic surfactant, and (D) a metal salt of an acidic phosphoric ester.

Abstract: The ESD protection circuit includes a detection controlling circuit that is connected between the power supply line and the grounding line, detects a current flowing through the power supply line and outputs a controlling signal responsive to a result of the detection. The ESD protection circuit includes a protecting nMOS transistor connected to the power supply line at a drain thereof and receives the controlling signal at a gate thereof. The ESD protection circuit includes one stage of PN-junction diode connected to a source of the protecting nMOS transistor at an anode thereof and to the grounding line at a cathode thereof.

Abstract: To provide a thermoplastic resin composition for cleaning a molding processing machine, which has good cleaning performance and workability in cleaning an inner side of a molding processing machine of thermoplastic resin composition, such as an extruder and an injection molding machine. A thermoplastic resin composition for cleaning a molding processing machine, which includes (A) an olefin-based resin, (B) a thermoplastic resin which is not compatible with the olefin-based resin of the component (A), (C) a thermoplastic resin for making the olefin-based resin of the component (A) and the thermoplastic resin of the component (B) compatible with each other, (D) an alkaline metal salt of a fatty acid, (E) a nonionic surfactant, and (F) a metal salt of an acidic phosphoric ester.

Abstract: To provide a thermoplastic resin composition for cleaning a molding processing machine, which has good cleaning performance and workability in cleaning an inner side of a molding processing machine of thermoplastic resin, such as an extruder and an injection molding machine. A thermoplastic resin composition for cleaning a molding processing machine, which includes (A) a thermoplastic resin containing a styrene-based resin, (B) an alkaline metal salt of a fatty acid, (C) a nonionic surfactant, and (D) a metal salt of an acidic phosphoric ester.

Abstract: According to one embodiment, provided is a semiconductor device including a lower layer wiring, and an upper layer wiring that is drawn in the same direction as a direction in which the lower layer wiring is drawn. Intermediate wirings include at least a first intermediate wiring and a second intermediate wiring. Conductors include at least a plurality of first conductors connecting between the lower layer wiring and the first intermediate wiring, a plurality of second conductors connecting between the upper layer wiring and the second intermediate wiring, and a plurality of third conductors which connect between the first intermediate wiring and the second intermediate wiring, and are less in number than the first conductors or the second conductors on a drawn side of the lower layer wiring and the upper layer wiring.

Abstract: According to one embodiment, provided is a semiconductor device including a lower layer wiring, and an upper layer wiring that is drawn in the same direction as a direction in which the lower layer wiring is drawn. Intermediate wirings include at least a first intermediate wiring and a second intermediate wiring. Conductors include at least a plurality of first conductors connecting between the lower layer wiring and the first intermediate wiring, a plurality of second conductors connecting between the upper layer wiring and the second intermediate wiring, and a plurality of third conductors which connect between the first intermediate wiring and the second intermediate wiring, and are less in number than the first conductors or the second conductors on a drawn side of the lower layer wiring and the upper layer wiring.

Abstract: A circuit simulation apparatus according to an embodiment of the present invention calculates a set value of a SPICE parameter of a MOSFET to carry out a variation analysis on a semiconductor circuit including the MOSFET.

Abstract: The present invention provides a thermoplastic resin composition for cleaning, containing: (A) 100 parts by mass of polypropylene resin, (B) 0 to 50 parts by mass of a thermoplastic resin which is not compatible with the polypropylene resin of the component (A), (C) 0.5 to 50 parts by mass of a thermoplastic resin for making the polypropylene resin of the component (A) compatible with the thermoplastic resin of the component (B), and (D) 0.5 to 15 parts by mass of a surfactant.

Abstract: In one embodiment, a SPICE corner model generating method for generating a SPICE corner model of an MOSFET includes preparing a table of a ratio X regarding a combination of two kinds of MOSFETs selected from N kinds of MOSFETs, the ratio X being a magnitude of a variation of an MOSFET in a case where directions of variations of the two kinds of MOSFETs are opposite directions to a magnitude of a variation of an MOSFET in a case where the directions of the variations of the two kinds of MOSFETs are the same direction, where N is an integer of 2 or greater. The method further includes reading out, when a combination of two kinds of MOSFETs is designated among the N kinds of MOSFETs, a value of the ratio X corresponding the designated combination from the table of the ratio X.

Abstract: The present invention presents a resin composition for cleaning a plastics-processing machine, containing a tracer substance and a thermoplastic resins, wherewith the plastics-processing machine is cleaned. After the plastics-processing machine finishing with processing of a resin is cleaned with the resin composition, the resin composition remaining in the processing machine is discharged with a subsequent resin. The residue of the said resin composition is checked by detecting fluorescence on the surface of a molding after the molding containing the subsequent resin is obtained in the discharging process of the said resin composition remaining in the processing machine.

Abstract: In one embodiment, a MOSFET model output apparatus is configured to output a MOSFET model for a simulation of a semiconductor circuit. The apparatus includes a shape data input part configured to input shape data of a MOSFET. The apparatus further includes a parameter calculation part configured to calculate a parameter of a parasitic device model to be added to the MOSFET model, using the shape data. The apparatus further includes a MOSFET model output part configured to generate and output the MOSFET model added with the parasitic device model, using the parameter of the parasitic device model. Further, the MOSFET model output part adds different parasitic device models to the MOSFET model in a case where the MOSFET is an N-type MOSFET and in a case where the MOSFET is a P-type MOSFET.

Abstract: The present invention is directed to a composite comprising a resin element comprising a resin composition and a vulcanized rubber element formed by vulcanizing an unvulcanized rubber, wherein the resin composition comprises a resin, a vulcanization-activating agent for improving adhesiveness of the resin to a rubber, and a stabilizer, and the resin composition and the vulcanized rubber are directly joined together.

Abstract: In one embodiment, a SPICE model parameter output apparatus is configured to output a SPICE model parameter of a high-frequency or analog MOSFET for a simulation of a semiconductor circuit. The apparatus includes a data input part to input shape data of the MOSFET and measurement data on frequency characteristics of the MOSFET. The apparatus further includes a substrate resistance calculating part configured to calculate a substrate resistance of a one-terminal substrate resistance model regarding the MOSFET, based on the measurement data. The apparatus further includes a SPICE model parameter output part configured to calculate the SPICE model parameter, based on the substrate resistance of the one-terminal substrate resistance model and the shape data, to output the calculated SPICE model parameter.

Abstract: A resin composition comprises a resin, a vulcanization-activating agent, and a stabilizer. The vulcanization-activating agent may be a compound having a plurality of polymerizable unsaturated bonds (e.g., a compound having a plurality of (meth)acryloyl groups). The stabilizer may be an antioxidant, or a light stabilizer (particularly, a stabilizer is capable of capturing a radical). Use of the resin composition as a resin material ensures to directly join between a resin and a rubber certainly and firmly. The proportion of the vulcanization-activating agent may be about 0.1 to 10 parts by weight relative to 100 parts by weight of the resin. The proportion of the stabilizer may be about 0.01 to 5 parts by weight relative to 100 parts by weight of the resin. The present invention provides a resin composition excellent in adhesiveness to a rubber.

Abstract: In one embodiment, a SPICE corner model generating method for generating a SPICE corner model of an MOSFET includes preparing a table of a ratio X regarding a combination of two kinds of MOSFETs selected from N kinds of MOSFETs, the ratio X being a magnitude of a variation of an MOSFET in a case where directions of variations of the two kinds of MOSFETs are opposite directions to a magnitude of a variation of an MOSFET in a case where the directions of the variations of the two kinds of MOSFETs are the same direction, where N is an integer of 2 or greater. The method further includes reading out, when a combination of two kinds of MOSFETs is designated among the N kinds of MOSFETs, a value of the ratio X corresponding the designated combination from the table of the ratio X.

Abstract: A circuit simulation apparatus according to an embodiment of the present invention calculates a set value of a SPICE parameter of a MOSFET to carry out a variation analysis on a semiconductor circuit including the MOSFET.