Abstract: An information processing device includes a processor configured to provide an incentive to a first user who sells or returns a first vehicle in which a part of a first coating film including an easily peelable layer is not peeled off.

Abstract: Disclosed herein is a method that includes forming a contact plug to be embedded in a first insulating film formed on a semiconductor substrate; forming a probe pad on the first insulating film to contact with the contact plug; performing a test operation by probing the probe pad; removing the probe pad; forming a second insulating film to cover the contact plug after removing the probe pad; and forming a pad electrode to be embedded in the second insulating film.

Abstract: A semiconductor device includes: a first layer; a second layer above the first layer; first and second multi-layered structures; and a supporter. The first and second multi-layered structures extend from the first layer to connect to the second layer. The supporter extends from the first layer to connect to the second layer. The supporter is between the first and second multi-layered structures. The supporter is separated from the first and second multi-layered structures by empty space.

Abstract: A semiconductor memory device in which a plurality of capacitors each including a columnar lower electrode, a capacitor insulation film and an upper electrode are stacked with interlayer films therebetween, a contact plug connects an upper face of each lower electrode of a lower layer with a bottom face of each lower electrode of an upper layer, and another contact plug connects upper electrodes of the capacitors in respective layers with each other.

Abstract: A semiconductor device includes: a first layer; a second layer above the first layer; first and second multi-layered structures; and a supporter. The first and second multi-layered structures extend from the first layer to connect to the second layer. The supporter extends from the first layer to connect to the second layer. The supporter is between the first and second multi-layered structures. The supporter is separated from the first and second multi-layered structures by empty space.

Abstract: In a batch cleaning apparatus having a one-bath-type cleaning tank, control is performed such that an average temperature of cleaning liquid in the cleaning tank is uniform among different batches. The one-bath-type cleaning tank has a megasonic oscillator for cleaning objects to be cleaned. A control computer controls the supply temperature of pure water supplied from a pure water heating device to dilute chemical solution so that variation in solution temperature occurring during application of megasonic waves is compensated. The objects to be cleaned are cleaned with an average solution temperature kept at a fixed level for all the batches, while maintaining a high cleaning efficiency.

Abstract: A semiconductor memory device in which a plurality of capacitors each including a columnar lower electrode, a capacitor insulation film and an upper electrode are stacked with interlayer films therebetween, a contact plug connects an upper face of each lower electrode of a lower layer with a bottom face of each lower electrode of an upper layer, and another contact plug connects upper electrodes of the capacitors in respective layers with each other.

Abstract: A method for production of a semiconductor device including the steps of: forming a gate insulating film, a polysilicon film and a first insulating film on a silicon substrate; patterning the first insulating film; forming a metal film; forming a silicide layer by reacting the polysilicon film with the metal film; forming a second insulating film after removing an unreacted metal film; removing the second insulating film such that the first insulating film is exposed and the second insulating film remains on a region which is not covered with the first insulating film; forming a gate electrode having a silicide layer on the upper layer side and a polysilicon layer on the lower layer side by carrying out etching using the second insulating film as a mask after removing the first insulating film; forming a third insulating film on the side surface of the gate electrode; and forming an interlayer insulating film and forming a contact hole therein.

Abstract: A method of manufacturing a stack capacitance type capacitor is provided, which prevents the problem that the capacitor cannot be formed because a lower electrode collapses with the external wall thereof exposed in forming the lower electrode of the capacitor in a deep hole formed in silicon oxide, and removing silicon oxide that is a support base material for the lower electrode using a solution containing hydrogen fluoride to expose the external wall of the lower electrode. According to the invention, the support base material in which a deep hole is formed is formed with an amorphous carbon film, the amorphous carbon film used as the support base material for the lower electrode is removed by dry etching after forming the lower electrode, and it is thereby possible to prevent the lower electrode from collapsing.

Abstract: In order to produce a MOS transistor having a gate electrode on a slope, patterning is first performed for a lower-layer gate electrode film near a lower end of the slope. A space between the lower-layer gate electrode films is filled with a filler so that the filler has the same height as a primary surface of a substrate. After an upper-layer gate electrode film is deposited, patterning is performed for the gate electrode films.

Abstract: A semiconductor storage device of the present invention has a configuration in which a plurality of memory cells respectively including a transistor connected to a storage element for accumulating data are used, a bit line and a word line for specifying one of a plurality of memory cells are used. A structure in which a source electrode and a drain electrode hold an active region is formed vertically to a substrate face. The same bit line is connected to the first two-memory cell unit adjacently formed in a predetermined direction. The same word line is formed, which is a gate electrode of the transistors of the second two-memory cell unit which includes one memory cell of the first two-memory cell unit and which is adjacently formed in the predetermined direction.

Abstract: A shutter curtain lifting prevention structure comprises a shutter curtain formed by connecting a plurality of slats via an interlock portion in the vertical direction, guide rails standing on both sides of an opening of the construction, and a cutout recess being integrally formed at the guide groove of each guide rail. The cutout recess is formed by horizontally cutting out the interior side plane portion of the front face located above and in the vicinity of the floor surface, such that when a bottom plate of the shutter curtain kept in a shut state is lifted, a connection portion of the bottom plate and the slat, which is opposed to the cutout recess is made engaged by the engaging portion defined by the cutout recess, thus preventing lifting of the shutter curtain.

Abstract: A method for production of a semiconductor device including the steps of: forming a gate insulating film, a polysilicon film and a first insulating film on a silicon substrate; patterning the first insulating film; forming a metal film; formin a silicide layer by reacting the polysilicon film with the metal film; forming a second insulating film after removing an unreacted metal film; removing the second insulating film such that the first insulating film is exposed and the second insulating film remains on a region which is not covered with the first insulating film; forming a gate electrode having a silicide layer on the upper layer side and a polysilicon layer on the lower layer side by carrying out etching using the second insulating film as a mask after removing the first insulating film; forming a third insulating film on the side surface of the gate electrode; and forming an interlayer insulating film and forming a contact hole therein.

Abstract: A method of manufacturing a stack capacitance type capacitor is provided, which prevents the problem that the capacitor cannot be formed because a lower electrode collapses with the external wall thereof exposed in forming the lower electrode of the capacitor in a deep hole formed in silicon oxide, and removing silicon oxide that is a support base material for the lower electrode using a solution containing hydrogen fluoride to expose the external wall of the lower electrode. According to the invention, the support base material in which a deep hole is formed is formed with an amorphous carbon film, the amorphous carbon film used as the support base material for the lower electrode is removed by dry etching after forming the lower electrode, and it is thereby possible to prevent the lower electrode from collapsing.

Abstract: After a conductive film serving as a capacitor lower electrode is formed, the subsequent process steps are performed with the capacitor lower electrode always supported by an interlayer insulating film, a conductive film serving as a portion of a capacitor upper electrode, and a capacitor dielectric film. Therefore, complete exposure of the conductive film serving as the capacitor lower electrode does not take place during a manufacturing process of a semiconductor device. Consequently, a disadvantage that the conductive film serving as the capacitor lower electrode is bent can be avoided. A method of manufacturing a semiconductor device achieving improvement in a yield thereof and a semiconductor device manufactured with such a manufacturing method can thus be obtained.

Abstract: A semiconductor device producing method that can clean an edge part of a semiconductor substrate with certainty is provided. The method of producing a semiconductor device includes a step of generating ions and a step of accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of a semiconductor substrate to clean the edge part of the semiconductor substrate. The semiconductor substrate is moved relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part. The step of generating ions includes applying a high-frequency voltage between a pair of electrodes to generate the ions between the electrodes.

Abstract: A cleaning agent for a semiconductor device contains a hydroxide, water and a compound expressed in the following general formula (I) and/or the following general formula (II): HO—((EO)x—(PO)y)z—H  (I) R—[(EO)x—(PO)y)z—H]m  (II) Thus provided is a cleaning agent for a semiconductor device, which is so improved as not to disconnect a wire or an embedded conductive layer.

Abstract: The present invention provides a cleaning equipment provided with a cleaning solution tank, a cleaning solution supply route for supplying the cleaning solution stored in the cleaning solution tank to a cleaning bath, a cleaning solution return route for returning the cleaning solution that has been supplied to the cleaning bath to the cleaning solution tank, a gas supply route for supplying a purge gas into the cleaning solution tank, and a gas discharge route for discharging the purge gas from the cleaning solution tank. Moreover, a cleaning solution discharge opening of the cleaning solution return route is immersed in the cleaning solution stored in the cleaning solution tank.

Abstract: A side edge of a wafer is retained by a plurality of chuck pins. A heating-and-cooling section is arranged such that a clearance is defined between a surface of the heating-and-cooling section and a surface of the wafer. The heating-and-cooling section is for heating or cooling the surface thereof. The clearance is filled with liquid by means of a liquid filling section. The surface of the wafer is heated or cooled by way of the thus-filled liquid.

Abstract: A gate electrode including a polycrystalline silicon film and a sidewall insulating film are formed on a semiconductor substrate with a gate insulating film therebetween. The semiconductor substrate provided with the gate electrode is brought into contact with a predetermined plating solution to deposit a cobalt film on the semiconductor substrate by electroless plating. Then, a heat treatment is effect to cause a reaction between the silicon in the gate electrode and the cobalt as well as a reaction between the silicon in the semiconductor substrate and the cobalt to form a cobalt silicide film. Thereafter, the unreacted cobalt film is removed. Thereby, damage to the semiconductor substrate can be suppressed, and salicide process can be simplified.