Patents by Inventor Naoki Yokoi
Naoki Yokoi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6642142Abstract: In a water rinsing process performed after the surface of a substrate has been cleaned using a cleaning solution, a first spinning process, in which water is supplied to the surface of the substrate while the substrate is rotated at a first rotation speed, and a second spinning process, in which the substrate is rotated at a second rotation speed that is higher than the first rotation speed, are repeatedly performed alternately.Type: GrantFiled: January 3, 2002Date of Patent: November 4, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Toshihiko Nagai, Hiroshi Tanaka, Naoki Yokoi, Yasuhiro Asaoka, Seiji Muranaka
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Publication number: 20030159716Abstract: A cleaning solution is introduced at a working temperature higher than room temperature into a cleaning chamber after the temperature of the inside of the cleaning chamber has been raised by introducing a fluid having a higher temperature than room temperature into the cleaning chamber, or after the temperature of the cleaning chamber has been raised using a heat source, thereby cleaning a semiconductor wafer set in the cleaning chamber.Type: ApplicationFiled: August 5, 2002Publication date: August 28, 2003Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Toshihiko Nagai, Hiroshi Tanaka, Naoki Yokoi, Yasuhiro Asaoka, Masahiko Higashi
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Publication number: 20030139046Abstract: Disclosed is a method for removing Pt (or Pt—Ir) and BST contaminants on the surface edge, back, and bevel of a semiconductor wafer. A wafer on which a stacked film selected from the group of a Pt film, a Pt—Ir film, and a Ba—Sr—Ti film is formed is prepared. A chemical containing hydrochloric acid is applied only to the surface edge, back, and bevel of the wafer. The surface edge, back, and bevel of the wafer are rinsed with pure water. Further, a chemical containing hydrogen fluoride is applied. The surface edge, back, and bevel of the wafer are rinsed again with pure water.Type: ApplicationFiled: February 27, 2003Publication date: July 24, 2003Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Yasuhiro Asaoka, Hiroshi Tanaka, Naoki Yokoi, Seiji Muranaka, Toshihiko Nagai
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Patent number: 6596630Abstract: A semiconductor device manufactured by cleaning without dissolving W, Ti, or TiN even if these metallic materials are exposed on the substrates to be cleaned, and a method for manufacturing such a semiconductor device. Impurities present on a silicon substrate can be removed while controlling the etching of a tungsten film exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HF, HCl, and NH4OH, under the condition that the surface of the silicon substrate is entirely covered with a tungsten film. After dry etching for patterning the tungsten film and the barrier metal, impurities present on a silicon substrate can be removed while controlling the etching of the tungsten film and the barrier metal exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HCl and NH4OH.Type: GrantFiled: July 29, 2002Date of Patent: July 22, 2003Assignee: Mitsubishi Denki Kabushiki KaishaInventor: Naoki Yokoi
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Patent number: 6586145Abstract: A method of fabricating a semiconductor device causing no pattern shifting of a peripheral oxide film etc. in removal of both of an antireflection film and a mask pattern and having a fine structure not implementable solely by photolithography and the semiconductor device are obtained. The method of fabricating a semiconductor device comprises steps of forming a base film of either a silicon film or a silicon compound film on a semiconductor substrate, forming a hard film of either a metal film or a metal compound film on the base film, forming a resist pattern on the hard film, dryly etching the hard film through the resist pattern serving as a mask for forming a hard pattern, dryly etching the base film through the hard pattern serving as a mask and removing the hard pattern by wet etching with a chemical solution not etching at least the base film.Type: GrantFiled: February 13, 2002Date of Patent: July 1, 2003Assignees: Mitsubishi Denki Kabushiki Kaisha, Matsushita Electric Industrial Co., Ltd.Inventors: Naoki Yokoi, Hiroshi Tanaka, Yasuhiro Asaoka, Seiji Muranaka, Toshihiko Nagai
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Publication number: 20030106567Abstract: A semiconductor substrate cleaning apparatus, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device are obtained, in which reduction of production yield of a semiconductor device can be prevented. The semiconductor substrate cleaning apparatus includes a holding member holding a semiconductor substrate and a cleaning member allowing a cleaning medium to be supplied only to a part of a surface of the semiconductor substrate while the semiconductor substrate held by the holding member is fixed. In such a manner, the cleaning medium is supplied to the semiconductor substrate while the semiconductor substrate is not rotated but fixed, whereby only a part of the surface of the semiconductor substrate can be cleaned.Type: ApplicationFiled: June 7, 2002Publication date: June 12, 2003Applicant: Mitsubishi Denki Kabushiki KaishaInventors: Kazutoshi Anabuki, Hiroshi Tanaka, Naoki Yokoi, Masahiko Higashi
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Patent number: 6531381Abstract: Disclosed is a method for removing Pt (or Pt—Ir) and BST contaminants on the surface edge, back, and bevel of a semiconductor wafer. A wafer on which a stacked film selected from the group of a Pt film, a Pt—Ir film, and a Ba—Sr—Ti film is formed is prepared. A chemical containing hydrochloric acid is applied only to the surface edge, back, and bevel of the wafer. The surface edge, back, and bevel of the wafer are rinsed with pure water. Further, a chemical containing hydrogen fluoride is applied. The surface edge, back, and bevel of the wafer are rinsed again with pure water.Type: GrantFiled: December 3, 2001Date of Patent: March 11, 2003Assignees: Mitsubishi Denki Kabushiki Kaisha, Matsushita Electric Industrial Co., Ltd.Inventors: Yasuhiro Asaoka, Hiroshi Tanaka, Naoki Yokoi, Seiji Muranaka, Toshihiko Nagai
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Publication number: 20030003754Abstract: A method of fabricating a semiconductor device causing no pattern shifting of a peripheral oxide film etc. in removal of both of an antireflection film and a mask pattern and having a fine structure not implementable solely by photolithography and the semiconductor device are obtained. The method of fabricating a semiconductor device comprises steps of forming a base film of either a silicon film or a silicon compound film on a semiconductor substrate, forming a hard film of either a metal film or a metal compound film on the base film, forming a resist pattern on the hard film, dryly etching the hard film through the resist pattern serving as a mask for forming a hard pattern, dryly etching the base film through the hard pattern serving as a mask and removing the hard pattern by wet etching with a chemical solution not etching at least the base film.Type: ApplicationFiled: February 13, 2002Publication date: January 2, 2003Applicant: Mitsubishi Denki Kabushiki KaishaInventors: Naoki Yokoi, Hiroshi Tanaka, Yasuhiro Asaoka, Seiji Muranaka, Toshihiko Nagai
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Publication number: 20020197847Abstract: A semiconductor device manufactured by cleaning without dissolving W, Ti, or TiN even if these metallic materials are exposed on the substrates to be cleaned, and a method for manufacturing such a semiconductor device. Impurities present on a silicon substrate can be removed while controlling the etching of a tungsten film exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HF, HCl, and NH4OH, under the condition that the surface of the silicon substrate is entirely covered with a tungsten film. After dry etching for patterning the tungsten film and the barrier metal, impurities present on a silicon substrate can be removed while controlling the etching of the tungsten film and the barrier metal exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HCl and NH4OH.Type: ApplicationFiled: July 29, 2002Publication date: December 26, 2002Applicant: Mitsubishi Denki Kabushiki KaishaInventor: Naoki Yokoi
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Publication number: 20020197853Abstract: In a water rinsing process performed after the surface of a substrate has been cleaned using a cleaning solution, a first spinning process, in which water is supplied to the surface of the substrate while the substrate is rotated at a first rotation speed, and a second spinning process, in which the substrate is rotated at a second rotation speed that is higher than the first rotation speed, are repeatedly performed alternately.Type: ApplicationFiled: January 3, 2002Publication date: December 26, 2002Inventors: Toshihiko Nagai, Hiroshi Tanaka, Naoki Yokoi, Yasuhiro Asaoka, Seiji Muranaka
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Publication number: 20020177310Abstract: Disclosed is a method for removing Pt (or Pt—Ir) and BST contaminants on the surface edge, back, and bevel of a semiconductor wafer. A wafer on which a stacked film selected from the group of a Pt film, a Pt—Ir film, and a Ba—Sr—Ti film is formed is prepared. A chemical containing hydrochloric acid is applied only to the surface edge, back, and bevel of the wafer. The surface edge, back, and bevel of the wafer are rinsed with pure water. Further, a chemical containing hydrogen fluoride is applied. The surface edge, back, and bevel of the wafer are rinsed again with pure water.Type: ApplicationFiled: December 3, 2001Publication date: November 28, 2002Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Yasuhiro Asaoka, Hiroshi Tanaka, Naoki Yokoi, Seiji Muranaka, Toshihiko Nagai
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Patent number: 6482750Abstract: In a process of cleaning a semiconductor substrate on which a polysilicon film serving as a silicon-based member and a tungsten film serving as a tungsten-based member are exposed simultaneously, there is used a cleaning fluid containing a hydroxide, a water-soluble organic solvent, a compound expressed by the following chemical formula (I) or (II) which is to serve as a silicon corrosion inhibitor, an organic compound, and at least one organic compound which is to serve as a tungsten corrosion inhibitor.Type: GrantFiled: January 10, 2001Date of Patent: November 19, 2002Assignee: Mitsubishi Denki Kabushiki KaishiInventor: Naoki Yokoi
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Publication number: 20020168879Abstract: A semiconductor device producing method that can clean an edge part of a semiconductor substrate with certainty is provided. The method of producing a semiconductor device includes a step of generating ions and a step of accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of a semiconductor substrate to clean the edge part of the semiconductor substrate. The semiconductor substrate is moved relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part. The step of generating ions includes applying a high-frequency voltage between a pair of electrodes to generate the ions between the electrodes.Type: ApplicationFiled: October 22, 2001Publication date: November 14, 2002Applicant: Mitsubishi Denki Kabushiki Kaisha and Matsushita Electric Industrial Co., Ltd.Inventors: Hiroshi Tanaka, Naoki Yokoi, Yasuhiro Asaoka, Seiji Muranaka, Toshihiko Nagai
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Publication number: 20020146911Abstract: A method of manufacturing a semiconductor device, having a resist-removing step which is improved so as not to etch a peripheral material and damage the peripheral material is provided. A resist pattern is formed on a substrate. Using the resist pattern as a mask, the substrate is etched. A surface-deteriorated layer of the resist pattern is removed by a first chemicals treatment. A bulk portion of the resist pattern is removed by a second chemicals treatment.Type: ApplicationFiled: September 26, 2001Publication date: October 10, 2002Applicant: Mitsubishi Denki Kabushiki KaishaInventors: Seiji Muranaka, Hiroshi Tanaka, Naoki Yokoi, Yasuhiro Asaoka, Toshihiko Nagai
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Patent number: 6432815Abstract: A semiconductor device manufactured by cleaning without dissolving W, Ti, or TiN even if these metallic materials are exposed on the substrates to be cleaned, and a method for manufacturing such a semiconductor device. Impurities present on a silicon substrate can be removed while controlling the etching of a tungsten film exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HF, HCl, and NH4OH, under the condition that the surface of the silicon substrate is entirely covered with a tungsten film. After dry etching for patterning the tungsten film and the barrier metal, impurities present on a silicon substrate can be removed while controlling the etching of the tungsten film and the barrier metal exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HCl and NH4OH.Type: GrantFiled: June 7, 1999Date of Patent: August 13, 2002Assignee: Mitsubishi Denki Kabushiki KaishaInventor: Naoki Yokoi
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Patent number: 6391113Abstract: Semiconductor wafer counters are respectively provided at a loader portion, at a plurality of processing baths and at an unloader portion in a semiconductor wafer processing apparatus in which semiconductor wafers are processed in sequence using a plurality of processing baths, and when missing of wafers is detected, an alarm is issued. Also, there is provided an interlock function which stops processing in a processing bath in which the missing is detected and allows processing in downstream processing baths to continue, but prevents additional lots from being introduced into the loader portion and stops processing in upstream processing baths after the completion of the chemical processing under way.Type: GrantFiled: June 2, 1998Date of Patent: May 21, 2002Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Toko Konishi, Naoki Yokoi
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Publication number: 20020001962Abstract: In a process of cleaning a semiconductor substrate on which a polysilicon film serving as a silicon-based member and a tungsten film serving as a tungsten-based member are exposed simultaneously, there is used a cleaning fluid containing a hydroxide, a water-soluble organic solvent, a compound expressed by the following chemical formula (I) or (II) which is to serve as a silicon corrosion inhibitor, an organic compound, and at least one organic compound which is to serve as a tungsten corrosion inhibitor.Type: ApplicationFiled: January 10, 2001Publication date: January 3, 2002Applicant: Mitsubishi Denki Kabushiki KaishaInventor: Naoki Yokoi
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Publication number: 20010036726Abstract: A semiconductor device manufactured by cleaning without dissolving W, Ti, or TiN even if these metallic materials are exposed on the substrates to be cleaned, and a method for manufacturing such a semiconductor device. Impurities present on a silicon substrate can be removed while controlling the etching of a tungsten film exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HF, HCl, and NH4OH, under the condition that the surface of the silicon substrate is entirely covered with a tungsten film. After dry etching for patterning the tungsten film and the barrier metal, impurities present on a silicon substrate can be removed while controlling the etching of the tungsten film and the barrier metal exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HCl and NH4OH.Type: ApplicationFiled: June 7, 1999Publication date: November 1, 2001Inventor: NAOKI YOKOI
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Patent number: 6032382Abstract: When an IPA is fed to a nozzle, a flow of the IPA passing through holes is generated. The flow becomes film-shaped and goes downward along an inner surface of a side wall of a processing vessel. Then, the flow is collected by a liquid receiving section formed in a lower portion of the processing vessel and discharged to an outside. The inner surface of the side wall of the processing vessel is covered with the flow of the IPA. Therefore, an IPA vapor can be prevented from condensing uselessly on the inner surface. As a result, the IPA vapor is effectively utilized for condensation on a surface of the object to be processed which is mounted on a pan. Thus, the defective dryness of the object can be prevented.Type: GrantFiled: November 12, 1997Date of Patent: March 7, 2000Assignees: Mitsubishi Denki Kabushiki Kaisha, Ryoden Semiconductor System Engineering CorporationInventors: Akinori Matsumoto, Takeshi Kuroda, Cozy Ban, Toko Konishi, Naoki Yokoi
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Patent number: 5996242Abstract: A nozzle and an exhaust member are provided opposite to each other with an upward opening of a processing vessel interposed therebetween. A side wall of the processing vessel is smoothly curved inward as the opening is approached upward. The nozzle spouts a nitrogen gas fed from a nitrogen gas feeder as a jet for covering the opening toward an exhaust port of the exhaust member. The jet can effectively function as a curtain because the side wall of the processing vessel is curved. Therefore, a cooling coil necessary for a conventional apparatus is not required. Consequently, instability of the state of the IPA vapor caused by the cooling coil can be eliminated so that defective dryness is relieved or eliminated.Type: GrantFiled: September 23, 1997Date of Patent: December 7, 1999Assignees: Ryoden Semiconductor System Engineering Corporation, Mitsubishi Denki Kabushiki KaishaInventors: Akinori Matsumoto, Takeshi Kuroda, Cozy Ban, Toko Konishi, Naoki Yokoi