Abstract: A semiconductor device of the invention comprises a semiconductor element provided within a housing, a bonding wire, a sealing resin member covering the semiconductor element and bonding wire, and a sheet member. The sheet member is fixed in the housing and arranged out of contact with the bonding wire, and moreover buried in the sealing resin member. Because the sheet member restrains the sealing resin member from vibrating, the bonding wire is connected with improved reliability. In place of the sheet member, it is possible to use a pillar member fixed on an insulating substrate. The semiconductor device is suitable for use on a mobile body, such as a vehicle, which proceeds with vibrations.

Abstract: A power module includes a substrate with a power semiconductor device mounted thereon, a case having an interior in which the substrate is disposed, a cooling fin having a surface on which the substrate and the case are placed, and a smoothing capacitor disposed on an opposite surface of the cooling fin from the surface on which the substrate is placed, the smoothing capacitor being electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device.

Abstract: P-electrode 30a and N-electrode 31a of a semiconductor device 2, and capacitors 10 in a plate-like shape or a block-like shape respectively connected to U-phase 40, V-phase 41, and W-phase 42 having a switching element 20 and a diode 21 are built in a semiconductor device 2, and a single or a plurality of capacitors 10 are respectively connected to P-electrodes 30a and N-electrodes 31a in each of the phases, whereby the smoothing capacitors are built in the semiconductor device to reduce wiring inductances, the capacitors are miniaturized, and an entire electric power converting device, i.e. inverter, is miniaturized.

Abstract: A semiconductor device for controlling electricity including a metal base plate and at least one insulating substrate. The insulating substrate includes an insulator plate, a back-side pattern on a back face of the insulator plate and bonded to the metal base plate, and two circuit patterns located on a front face of the insulator plate and above the back-side pattern. Each of the two circuit patterns has an “L” shape and extends along two sides of the insulator plate that are continued and perpendicular to each other. The two circuit patterns are also arranged at opposed corners of the insulator plate in a centrosymmetrical relation each other. Further, in each circuit pattern, a switching element is sandwiched between a free-wheel diode and an electrode area.

Abstract: A power module includes a box-shaped smoothing capacitor (20) for smoothing a DC supply voltage to be externally applied to a power semiconductor device (5). The smoothing capacitor (20) is in contact with a side surface of a case frame (6) including a side (along which an N-terminal (8N) and a P-terminal (8P) are arranged) of a top surface of the case frame (6), and has a top surface level with the top surface of the case frame (6). An N-electrode (21N) and a P-electrode (21P) of the smoothing capacitor (20) are disposed on the top surface of the smoothing capacitor (20) and in proximity to the N-terminal (8N) and the P-terminal (8P) of a power module body portion (99), respectively. The power module can reduce a circuit inductance, is reduced in size and weight, and has good resistance to vibration.

Abstract: A power module includes a box-shaped smoothing capacitor (20) for smoothing a DC supply voltage to be externally applied to a power semiconductor device (5). The smoothing capacitor (20) is in contact with a side surface of a case frame (6) including a side (along which an N-terminal (8N) and a P-terminal (8P) are arranged) of a top surface of the case frame (6), and has a top surface level with the top surface of the case frame (6). An N-electrode (21N) and a P-electrode (21P) of the smoothing capacitor (20) are disposed on the top surface of the smoothing capacitor (20) and in proximity to the N-terminal (8N) and the P-terminal (8P) of a power module body portion (99), respectively. The power module can reduce a circuit inductance, is reduced in size and weight, and has good resistance to vibration.

Abstract: A semiconductor device for electric power comprising: a resin case; and a main circuit terminally inserted in the resin case, which main circuit terminal has an end on an outwardly connecting side, wherein the end is bent so as to be in parallel with a resin surface of the resin case, a flange nut is in contact with an inner surface of the end on the outwardly connecting side, and the end on the outwardly connecting side is sunk into the resin case so that an outer surface of the end on the outwardly connecting side and the resin surface in the vicinity thereof are on the same planes, whereby only the outer surface is exposed from the resin surface and the main circuit terminal wherein the flange nut and the resin case are monolithically molded to further firmly fix the flange nut.

Abstract: A control substrate is covered by an electromagnetic shielding member connected to a conductive base plate on which a power insulating substrate is placed. A conductive connecting member through which the electromagnetic shielding member and the conductive base plate are electrically connected to each other is inserted into a case. The control substrate and the electromagnetic shielding member are supported by the conductive connecting member.

Abstract: A semiconductor device of the invention comprises a semiconductor element provided within a housing, a bonding wire, a sealing resin member covering the semiconductor element and bonding wire, and a sheet member. The sheet member is fixed in the housing and arranged out of contact with the bonding wire, and moreover buried in the sealing resin member. Because the sheet member restrains the sealing resin member from vibrating, the bonding wire is connected with improved reliability. In place of the sheet member, it is possible to use a pillar member fixed on an insulating substrate. The semiconductor device is suitable for use on a mobile body, such as a vehicle, which proceeds with vibrations.

Abstract: It is an object to provide a power semiconductor device having a circuit pattern and a lower pattern made of an Al alloy for cost reduction and enabling reduction in heat resistance and improvement in resistance of a soldering layer to heat cycle. A substrate of semiconductor elements is mounted on a metal base plate made of a Cu alloy. The substrate of semiconductor elements includes an insulating substrate made of ceramics or the like. The circuit pattern and the lower pattern both made of an Al alloy are formed on an upper surface and a lower surface of the insulating substrate. The lower pattern is provided on an entire surface of the insulating substrate and joined onto the metal base plate through the soldering layer. Thicknesses of the metal base plate and the insulating substrate are respectively set to be 3.5 to 5.5 mm and 0.5 to 1 mm, for example. A thickness of the circuit pattern is set to be 0.4 to 0.6 mm and thicknesses of the lower pattern and the soldering layer are respectively set to be 0.

Abstract: A semiconductor device for controlling electricity includes:

Abstract: A control substrate is covered with an electromagnetic shielding member, and the electromagnetic shielding member is connected to a conductive base plate on which a power insulating substrate is placed. A conductive connecting member through which the electromagnetic shielding member and the conductive base plate are electrically connected to each other is inserted into a case. The control substrate and the electromagnetic shielding member are supported by the conductive connecting member.

Abstract: P-electrode 30a and N-electrode 31a of a semiconductor device 2, and capacitors 10 in a plate-like shape or a block-like shape respectively connected to U-phase 40, V-phase 41, and W-phase 42 having a switching element 20 and a diode 21 are built in a semiconductor device 2, and a single or a plurality of capacitors 10 are respectively connected to P-electrodes 30a and N-electrodes 31a in each of the phases, whereby the smoothing capacitors are built in the semiconductor device to reduce wiring inductances, the capacitors are miniaturized, and an entire electric power converting device, i.e. inverter, is miniaturized.

Abstract: A semiconductor device is disclosed which employs transfer molding to simplify a resin sealing step, reduces fabrication costs without using expensive elements, and has an improved efficiency of dissipation of heat generated by a power device and an improved product rating. The power device (101) and a control device (102) are placed in predetermined positions on horizontally positioned lead frames (103a, 103b), respectively. An insulating layer (105) of epoxy resin or the like is formed on a major surface of a heat sink (104), and a circuit pattern layer (106) formed on a major surface of the insulating layer (105) is shaped to conform to a predetermined circuit pattern. The lead frames (103a, 103b) are disposed on the circuit pattern layer (106).

Abstract: There is disclosed a semiconductor device wherein a mounting substrate (3) including an insulating layer and a pattern electrode selectively provided on the insulating layer is mounted on a heat sink (6) having a major surface. A plurality of copper supports (2) each having a surface forming an angle of substantially not more than 90.degree. with the major surface of the heat sink (6) are provided on the mounting substrate (3) such that the respective surfaces are not opposed to each other, and each of the supports (2) supports a semiconductor body (1). The semiconductor bodies (1) are connected to the pattern electrode with wires (9), and a portion enclosing at least the wires (9) is filled with a silicone gel (11). This permits the semiconductor device of large capacity to be reduced in size and to have an improved durability.